• Journal of the Korean Ceramic Society
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• v.32 no.12
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• pp.1417-1423
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• 1995

α/β sialon based composites containing silicon nitride whisker and silicon carbide platelet were fabricated by hot pressing. Effect of the reinforcing agents on the α to β phase transformation of the sialon as well as on the mechanical properties was investigated. Silicon nitride whisker and silicon carbide platelet promoted the phse transformation. TEM/EDS analysis revealed that the grain containing the whisker had 'core-rim' structure; core being high purity Si3N4 whisker and rim being β-sialon. Flexural strength of the composite decreased with the reinforcement addition which, on the other hand, improved fracture toughness of it. High temperature strength was measured at 1300℃ to be about 130 MPa lower than that measured at RT for the whisker reinforced composites.

• Carbon letters
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• v.1 no.1
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• pp.12-16
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• 2000

Carbon fiber was reacted with gaseous silicon monoxide which is produced from pack-powder mixture at elevated temperature. As a result of the reaction, two kinds of SiC fiber were obtained. The first one was SiC fibers which were converted from carbon fiber. The fiber is constituted with polycrystal like fine grains or monolithic crystals that have a size from sub-micron to $10\;{\mu}m$. Their size depends on the temperature during the conversion reaction. The second one was ultra-fine SiC fibers that were found on the surface of the converted SiC fibers. The ultra-fine fibers have diameters from 0.08 to $0.2\;{\mu}m$ and their aspect ratio were larger than 100. The chemical composit ion of the ultra-fine fibers was analyzed using an Auger electron spectroscopy. In result, the fibers consist of 51% silicon, 38% carbon and 11% oxygen by weight.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.433-433
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• 2011

Since the concept of graphene was established, it has been intensively investigated by researchers. The unique characteristics of graphene have been reported, the graphene attracted a lot of attention for material overcomes the limitations of existing semiconductor materials. Because of these trends, economical fabrication technique is becoming more and more important topic. Especially, the epitaxial growth method by sublimating the silicon atoms on Silicon carbide (SiC) substrate have been reported on the mass production of high quality graphene sheets. Although SiC exists in a variety of polytypes, the 3C-SiC polytypes is the only polytype that grows directly on Si substrate. To practical use of graphene for electronic devices, the technique, forming the graphene on 3C-SiC(111)/Si structure, is much helpful technique. In this paper, we report on the growth of graphene on 3C-SiC(111) surface. To investigate the morphology of formed graphene on the 3C-SiC(111) surface, the radial distribution function (RDF) was calculated using molecular dynamics (MD) simulation. Through the comparison between the kinetic energies and the diffusion energy barrier of surface carbon atoms, we successfully determined that the graphitization strongly depends on temperature. This graphitization occurs above the annealing temperature of 1500K, and is also closely related to the behavior of carbon atoms on SiC surface. By analyzing the results, we found that the diffusion energy barrier is the key parameter of graphene growth on SiC surface.

• Journal of the Korean Ceramic Society
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• v.46 no.5
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• pp.515-519
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• 2009

Carbon layers were fabricated on silicon carbide by chlorination reaction at temperatures between $1000^{\circ}C$ and $1500^{\circ}C$ with $Cl_2/H_2$ gas mixtures. The effect of reaction temperature on the micro-structures and tribological behavior of SiC derived carbon layer was investigated. Tribological tests were carried out ball-on-disk type wear tester. Carbon layers were characterized by X-ray diffractometer, Raman spectroscopy and surface profilometer. Both friction coefficients and wear rates were maintained low values at reaction temperature up to $1300^{\circ}C$ but increased suddenly above this temperature. Variation of surface roughness as a function of reaction temperature was dominant factor affecting tribological transition behavior of carbon layer derived from silicon carbide at high temperature.

• Journal of the Korean Ceramic Society
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• v.32 no.10
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• pp.1162-1168
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• 1995

Systematic studies of the effects of additives and processing variables on the sintered density and the effect of crystalline forms of starting powders on the microstructure of pressureless sintered silicon carbide are described. Oxide additives were effective for the densification of SiC up to 96% of theoretical density at temperature as low as 185$0^{\circ}C$. Use of embedding powder increased the sintered density, up to 98% of theoretical density, by decreasing the weight loss during sintering. Composite type duplex microstructure has been developed due to the $\beta$longrightarrow$\alpha$ phase transformation of SiC by sintering at 185$0^{\circ}C$ and heat treatment at 195$0^{\circ}C$ for 1h.

• Nuclear Engineering and Technology
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• v.55 no.10
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• pp.3725-3731
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• 2023

Thorium dioxide (ThO₂)-silicon carbide (SiC) composite fuel pellets were fabricated via the spark plasma-sintering (SPS) method to investigate the role of the addition of SiC in enhancing the thermal conductivity of ThO₂ fuel. SiC particles with an average size of 1㎛ in 10 and 15 vol% were used to manufacture the composite pellets. The changes in the composites' densification, microstructure and thermal conductivity were explored by comparing them with pure ThO₂ pellets. The structural and microstructural characterization of the composite pellets has revealed that SPS could manufacture high-quality composite pellets without having any reaction products or intermetallic. The density measurement by the Archimedes principles and the grain size from the electron back-scattered diffraction (EBSD) analysis has indicated that the composites have higher densities and smaller grain sizes than the pellets without SiC addition. Finally, thermal conductivity as a function of temperature has revealed that sintered ThO₂-SiC composites showed an increase of up to 56% in thermal conductivity compared to pristine ThO₂ pellets.

• Journal of the Korean Ceramic Society
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• v.45 no.9
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• pp.531-536
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• 2008

Reaction bonded silicon carbide (RBSC) composite for heat-exchanger was fabricated by molten Si infiltration method. For enforcing fracture toughness to reaction bonded silicon carbide composite, the surface of carbon fiber has coating layer by SiC or pyro-carbon. For SiC layer coating, CVD method was used. And for carbon layer coating, the phenol resin was used. In the case of carbon layer coating, fracture toughness and fracture strength were enhancing to 4.4 $MPa{\cdot}m^{1/2}$ and 279 MPa.

• Journal of the Korean Ceramic Society
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• v.45 no.8
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• pp.486-492
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• 2008

Reaction bonded silicon carbide(RBSC) composite for heat-exchanger was fabricated by molten Si infiltration method. The raw materials with variable particle sizes were used in this experience. The finer the particle size in sintered silicon carbide was the more increasing 3-point bending strength and fracture toughness. As the adaptable particle sizes had been occupied interstice arising from packing sample, the mechanical properties were increased. In the PCS1-1 sample, the 3-point bending strength and fracture toughness were 323MPa and $4.9\;MPa{\cdot}m^{1/2}$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.87-87
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• 2009

The composites were fabricated by adding 30, 40, 50, 60[vol.%] Zirconium Diboride(hereafter, $ZrB_2$) powders as a second phase to Silicon Carbide(hereafter, SiC) matrix. SiC-$ZrB_2$ composites were sintered by Spark Plasma Sintering(hereafter, SPS) in argon gas atmosphere. The relative density SiC+30[vol.%]$ZrB_2$, SiC+40[vol.%]$ZrB_2$, SiC+50[vol.%]$ZrB_2$ and SiC+60[vol.%]$ZrB_2$ composites are 94.98[%], 99.57[%], 96.58[%] and 93.62[%] respectively.

• Transactions on Electrical and Electronic Materials
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• v.7 no.6
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• pp.301-304
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• 2006

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of the SiC (Silicon Carbide) thin film. The SiC thin film exhibits good chemical and thermal stability. The good thermal and chemical stability make SiC an attractive candidate for electronic applications. A vertical alignment of nematic liquid crystal by atomic beam exposure on the SiC thin film surface was achieved. The about $87^{\circ}$ of stable pretilt angle was achieved at the range from $30^{\circ}\;to\;45^{\circ}$ of incident angle. Consequently, the vertical alignment effect of liquid crystal electro-optical characteristic by the atomic beam alignment method on the SiC thin film layer can be achieved.