• Carbon letters
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• 제7권3호
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• pp.166-170
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• 2006

Silicon carbide whiskers ($SiC_w$) having the diameter in the range of 20-80 nm were synthesised from coconut fibres through sol-gel process. The coconut fibres were impregnated with tetraethoxysilane and methyltriethoxysilane derived sol and pyrolyzed at $1400^{\circ}C$ in argon. X-ray of the pyrolyzed samples showed the formation of ${\beta}$-SiC.

• 한국세라믹학회지
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• 제37권6호
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• pp.569-575
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• 2000

Fabrication of carbon fiber reinforced composites was carried out by hand lay-up method. Carbon nanofibers and SiC nanofibers were used as filler in the composites fabrication. Carbon nanofibers, one of the new carbon materials, have 5∼500 nm in diameter and 5-10 nm in length. SiC nanofibers were modified by silicon monoxide vapor with carbon nanofibers. The composites were carbonized at 1000$^{\circ}C$ in a nitrogen atmosphere, and then densified by molten pitches impregnated in vacuum. Multiple cycles of liquid pitch impregnation and carbonization were carried out to obtain a desired density. The composites were characterized by density, microstructure. The inter-laminar shear strength (ILSS) test was performed for mechanical properties. For the new application, the microwave reflective proeprty of composites was investigated. Dielectric constant and permeability spectrum were measured in 12∼18 GHz frequency ranges. On the basis of the wave propagation theory in a lossy media, the reflection loss from the composite inter-layer was predict as a function of frequency.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.352-352
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• 2010

Silicon Carbide (SiC) power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. In this paper, we report the effect of the P-base doping concentration ($N_{PBASE}$) on the transient characteristics of 4H-SiC DMOSFETs. By reducing $N_{PBASE}$, switching time also decreases, primarily due to the lowered channel resistance. It is found that improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the and channel resistance. Therefore, accurate modeling of the operating conditions are essential for the optimization of superior switching performance.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.101-101
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• 2010

A strong adhesion of a silicon carbide (SiC) coating on a WC-Co substrate was achieved through an ion beam mixing technique and the corrosion resistance of the SiC coated WC-Co was investigated by means of a potentiodynamic electrochemical test. In the case of 1 M NaOH solution, a corrosion current density for a SiC coated WC-Co with a heat treatment at $500^{\circ}C$ displays about 50 times lower than that for the as-received WC-Co. However, in the case of 0.5 M H2SO4 solution, a corrosion current density for a SiC coated WC-Co displays about 3 times lower than that for as-received WC-Co. We discussed the physical reasons for the changes of the corrosion current densities at the different electrolytes.

• 한국연소학회:학술대회논문집
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• 한국연소학회 2012년도 제44회 KOSCO SYMPOSIUM 초록집
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• pp.25-27
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• 2012

In this paper, combustion process in the perforated silicon carbide(SiC) tube using a two dimensional approaches with GRI Mechanism 1.2 was investigated. The computational mesh structure which is divided into $60{\times}15$ and boundary conditions are set to constant mass flow rate at the inlet and constant pressure condition at the outlet respectively. Its result shows that the temperature on this peak was roughly 100K higher than the adiabatic flame temperature of 2223K for a free laminar flame at these conditions.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.193-193
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• 2011

Strong adhesion of a silicon carbide (SiC) coating to a WC-Co substrate was achieved through an ion beam mixing technique and the corrosion resistance of the SiC coated WC-Co was investigated by means of a potentiodynamic electrochemical test. In a 1 M NaOH solution, the corrosion current density of SiC-coated WC-Co after heat treatment at 500$^{\circ}C$ was about 50 times lower than that for the as-received WC-Co. In addition, the corrosion resistance systematically increases with increasing the SiC coating thickness. On the other hand, for a 0.5 M H2SO4 solution, the corrosion current density for SiC-coated WC-Co was about 3 times lower than that for the as-received WC-Co. We discuss the physical reasons for the changes in the corrosion current density with the different electrolytes.

• E2M - 전기 전자와 첨단 소재
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• 제14권12호
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• pp.11-14
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• 2001

반도체 동작시에 파워 손실을 최소화하는 것은 2000년대의 에너지, 산업전자, 정보통신 산업분야에서의 가장 주요한 요구 사항중의 하나이다. 실리콘계 반도체 소자들은 완전히 새로운 구동기구의 소자가 개발되지 않는 한, 실리콘 재료의 낮은 열전도율이나 낮은 절연파괴전계와 같은 물리적 특성한계 때문에 이러한 요구를 만족시키는 것이 불가능한 실정이다. 따라서 21세기를 위한 대안으로 고열전도율의 WBG(Wide Band-Gap) 물질 그 중에서도 탄화규소(SiC) 반도체가 제시되고 있다. SiC 반도체는 실리콘에 비하여 밴드 갭(band gap: E$_{g}$)이 높을 뿐만이 아니라 절연파괴강도(E$_{B}$)가 한 자릿수 이상 그리고 전자의 포화 drift 속도, V$_{s}$ 및 열전도도 k가 3배 가량 크다. 따라서 SiC는 고온 동작 내지는 고내압, 대전류, 저손실 반도체를 제작하는데 아주 유리하다. 본고에서는 응용성이 넓고, 단결정 제조가 비교적 용이한 SiC 반도체의 기술현황에 대하여 살펴보고자 한다.

• Nuclear Engineering and Technology
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• 제46권4호
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• pp.475-480
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• 2014

We developed a simple method to prepare the displacement damage cross section of SiC using NJOY and SRIM/TRIM. The number of displacements per atom (DPA) dependent on primary knock-on atom (PKA) energy was computed using SRIM/TRIM and it is directly used by NJOY/HEATR to compute the neutron energy dependent DPA cross sections which are required to estimate the accumulated DPA of nuclear material. SiC DPA cross section is published as a table in DeCART 47 energy group structure. Proposed methodology can be easily extended to other materials.

• 한국표면공학회지
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• 제43권1호
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• pp.36-40
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• 2010

The SiO vapor that was generated from a mixture of Si and $SiO_2$ was reacted at $1350^{\circ}C$ for 2 h under vacuum with carbon nanofibers to produce SiC nanofibers having an average diameter of 100~200 nm. In order to understand the gas corrosion behavior, SiC nanofibers were exposed to air up to $1000^{\circ}C$. SiC oxidized to amorphous $SiO_2$, but its oxidation resistance was inferior unlike bulk SiC, because of high surface area of nanofibers. When SiC nanofibers were exposed to Ar-1% $SO_2$ atmosphere, SiC oxidized to amorphous $SiO_2$, without forming $SiS_2$, owing to the thermodynamic stability of $SiO_2$.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권3호
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• pp.182-186
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• 2005

In this work, thermal evaporation system was employed to deposit thin films of SiC on glass substrates in order to determine the parameters of them. Measurements included transmission, absorption, Seebak effect, resistivity and conductivity, absorption coefficient, type of energy band-gap, extinction coefficient as functions of photon energy and the effect of increasing film thickness on transmittance. Results explained that SiC thin film is an n-type semiconductor of indirect energy band-gap of ${\sim}3eV$, cut-off wavelength of 448nm, absorption coefficient of $3.4395{\times}10^{4}cm^{-1}$ and extinction coefficient of 0.154. The experimental measured values are in good agreement with the typical values of SiC thin films prepared by other advanced deposition techniques.