• 제목/요약/키워드: silica PLC

검색결과 22건 처리시간 0.022초

Thermal Characteristics of a Laser Diode Integrated on a Silica-Terraced PLC Platform

  • Kim, Duk-Jun;Han, Young-Tak;Park, Yoon-Jung;Park, Sang-Ho;Shin, Jang-Uk;Sung, Hee-Kyung
    • ETRI Journal
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    • 제27권3호
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    • pp.337-340
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    • 2005
  • A spot-size converted Fabry-Perot laser diode (LD) was flip-chip bonded to a silica-terraced planar lightwave circuit(PLC) platform to examine the effect of the silica terrace on the heat dissipation of the LD module. From the measurement of the light-current characteristics, it was discovered that the silica terrace itself is not a strong thermal barrier, but the encapsulation of the integrated LD with an index-matching polymer resin more or less deteriorates the heat dissipation.

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Boron 첨가량이 평면광회로용 실리카 박막의 UV 감광성에 미치는 영향 (Effect of Boron Concentration on the UV Photosensitivity of Silica Glass Film for Planar Lightwave Circuit)

  • 권기열;조승현;신동욱;송국현;이낙규;나경환
    • 한국세라믹학회지
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    • 제41권11호
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    • pp.826-833
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    • 2004
  • 본 연구에서는 PLC 소자용 브래그 격자에 적용되는 재료인 Ge, B 등이 다량 첨가되어 있는 실리카 유리에서 발생하는 감광성(photosensitivity)을 조사하고 감광성의 발현 기구를 연구하였다. 관찰된 굴절률 변화의 최대값은 약 $10^{-3}$ 정도였으며 열처리 과정을 거치기 전후에 이러한 굴절률의 변화 양상이 변화하는 것을 관찰하였다. 이와 같은 굴절률의 변화를 UV 흡수도와 라만 스펙트림을 이용하여 본 연구의 시편에서 발생하는 감광성의 기구를 규명한 결과 굴절률 변화 요인이 유리 내에 존재하는 내부응력과 첨가된 B에 의하여 증대된 고밀화 과정에서 발생하는 현상임을 밝혔다.

A PLC-Based Optical Sub-assembly of Triplexer Using TFF-Attached WDM and PD Carriers

  • Han, Young-Tak;Park, Yoon-Jung;Park, Sang-Ho;Shin, Jang-Uk;Kim, Duk-Jun;Park, Chul-Hee;Park, Sung-Woong;Kwon, Yoon-Koo;Lee, Deug-Ju;Hwang, Wol-Yon;Sung, Hee-Kyung
    • ETRI Journal
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    • 제28권1호
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    • pp.103-106
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    • 2006
  • We have fabricated a planar lightwave circuit (PLC) hybrid-integrated optical sub-assembly of a triplexer using a thin film filter (TFF)-attached wavelength division multiplexer (WDM) and photodiode (PD) carriers. Two types of TFFs were attached to a diced side of a silica-terraced PLC platform, and the PD carriers with a $45^{\circ}$ mirror on which pin-PDs were bonded were assembled with the platform. A clear transmitter eye-pattern and minimum receiver sensitivity of -24.5 dBm were obtained under 1.25 Gb/s operation for digital applications, and a second-order inter-modulation distortion (IMD2) of -70 dBc was achieved for an analog receiver.

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Cost Effective Silica-Based 100 G DP-QPSK Coherent Receiver

  • Lee, Seo-Young;Han, Young-Tak;Kim, Jong-Hoi;Joung, Hyun-Do;Choe, Joong-Seon;Youn, Chun-Ju;Ko, Young-Ho;Kwon, Yong-Hwan
    • ETRI Journal
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    • 제38권5호
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    • pp.981-987
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    • 2016
  • We present a cost-effective dual polarization quadrature phase-shift coherent receiver module using a silica planar lightwave circuit (PLC) hybrid assembly. Two polarization beam splitters and two $90^{\circ}$ optical hybrids are monolithically integrated in one silica PLC chip with an index contrast of $2%-{\Delta}$. Two four-channel spot-size converter integrated waveguide-photodetector (PD) arrays are bonded on PD carriers for transverse-electric/transverse-magnetic polarization, and butt-coupled to a polished facet of the PLC using a simple chip-to-chip bonding method. Instead of a ceramic sub-mount, a low-cost printed circuit board is applied in the module. A stepped CuW block is used to dissipate the heat generated from trans-impedance amplifiers and to vertically align RF transmission lines. The fabricated coherent receiver shows a 3-dB bandwidth of 26 GHz and a common mode rejection ratio of 16 dB at 22 GHz for a local oscillator optical input. A bit error rate of $8.3{\times}10^{-11}$ is achieved at a 112-Gbps back-to-back transmission with off-line digital signal processing.

Effective Silicon Oxide Formation on Silica-on-Silicon Platforms for Optical Hybrid Integration

  • Kim, Tae-Hong;Sung, Hee-Kyung;Choi, Ji-Won;Yoon, Ki-Hyun
    • ETRI Journal
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    • 제25권2호
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    • pp.73-80
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    • 2003
  • This paper describes an effective method for forming silicon oxide on silica-on-silicon platforms, which results in excellent characteristics for hybrid integration. Among the many processes involved in fabricating silica-on-silicon platforms with planar lightwave circuits (PLCs), the process for forming silicon oxide on an etched silicon substrate is very important for obtaining transparent silica film because it determines the compatibility at the interface between the silicon and the silica film. To investigate the effects of the formation process of the silicon oxide on the characteristics of the silica PLC platform, we compared two silicon oxide formation processes: thermal oxidation and plasma-enhanced chemical vapor deposition (PECVD). Thermal oxidation in fabricating silica platforms generates defects and a cristobalite crystal phase, which results in deterioration of the optical waveguide characteristics. On the other hand, a silica platform with the silicon oxide layer deposited by PECVD has a transparent planar optical waveguide because the crystal growth of the silica has been suppressed. We confirm that the PECVD method is an effective process for silicon oxide formation for a silica platform with excellent characteristics.

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Silica-Based Planar Lightwave Circuits for WDM Applications

  • Okamoto, Katsunari;Inoue, Yasuyuki;Tanaka, Takuya;Ohmori, Yasuji
    • E2M - 전기 전자와 첨단 소재
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    • 제11권11호
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    • pp.53-65
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    • 1998
  • Planar lightwave circuits (PLCs) provide various important devices for optical wavelength division multiplexing (WDM) systems, subscriber networks and etc. This paper reviews the recent progress and future prospects of PLC technologies including arrayed-waveguide grating multiplexers, optical add/drop multiplexers, programmable dispersion equalizers and hybrid optoelectronics integration technologies.

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PLC Optical Splitter(1${\times}$32)의 신뢰성 평가 (High Reliability Optical Splitters Composed of Planar Lightwave Circuits)

  • 구현덕;임해용;박종혁;박강희
    • 한국광학회:학술대회논문집
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    • 한국광학회 2008년도 하계학술발표회 논문집
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    • pp.265-266
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    • 2008
  • The environmental and mechanical reliability of planar lightwave circuit (PLC)-type optical splitter modules is investigated with references [1, 3]. The module is composed of Y-branching silica-based waveguides on Si connected to optical fiber with UV-curable adhesives and is packaged in a metal case which is filled with humidity-resistant resin. High optical performance such as low loss, low reflection, and thermal stability are obtained through the use of this fiber connection technique. Ten reliability tests including long-term environmental and mechanical and ALT test were carried out for more then ten $1{\times}32$ channel PLC splitter modules.

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An Etch-Stop Technique Using $Cr_2O_3$ Thin Film and Its Application to Silica PLC Platform Fabrication

  • Shin, Jang-Uk;Kim, Dong-June;Park, Sang-Ho;Han, Young-Tak;Sung, Hee-Kyung;Kim, Je-Ha;Park, Soo-Jin
    • ETRI Journal
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    • 제24권5호
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    • pp.398-400
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    • 2002
  • Using $Cr_2O_3$ thin film, we developed a novel etch-stop technique for the protection of silicon surface morphology during deep ion coupled plasma etching of silica layers. With this technique we were able to etch a silica trench with a depth of over 20 ${\mu}m$ without any damage to the exposed silicon terrace surface. This technique should be well applicable to fabricating silica planar lightwave circuit platforms for opto-electronic hybrid integration.

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100GHz 간격 16 채널 실리카 AWG 모듈 (100GHz Spacing 16Cchannel Silica AWG Module)

  • 김현수;정선태
    • 한국광학회:학술대회논문집
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    • 한국광학회 1998년도 제15회 광학 및 양자전자 학술발표회 논문집
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    • pp.152-153
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    • 1998
  • PLC 기술을 이용하여 16 채널 실리카 AWG 모듈을 제작하여 특성을 측정하였다. 입출력 광섬유간의 삽입손신은 3.77~6.55dB, 옆 채널간 crosstalk는 19dB, 채널 사이의 파장 간격은 0.8$\pm$0.02nm으로 측정되엇다. 온습도 주기 시험을 통하여 모듈의 신뢰성을 검증하였다.

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FHD법에 의해 증착된 실리카막의 도펀트 첨가에 의한 굴절률 제어 (Refractive Index Control by Dopant for Thick Silica films Deposited by FHD)

  • 김용탁;서용곤;윤형도;임영민;윤대호
    • 한국세라믹학회지
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    • 제40권6호
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    • pp.589-593
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    • 2003
  • 실리카 평판광회로는 다양한 광수동소자에 응용이 되고 있으며, 이를 구성하는 SiO$_2$와 GeO$_2$-SiO$_2$ 막은 화염가수분해증착에 의해 증착되었다. SiO$_2$ 막은 산-수소 토치에 SiCl$_4$, POC1$_3$와 BCl$_3$를 주입하여 화염가수반응에 의해 생성되었으며, POC1$_3$/BC1$_3$ 유량비가 증가함에 따라 P 농도는 2.0-2.8 at%까지 증가하였고, 굴절률은 1.4584-1.4605로 증가하였다. GeO$_2$-SiO$_2$ 막의 굴절률은 GeCl$_4$ 유량에 의해 제어되었으며 30-120 sccm으로 증가함에 따라 1.4615-1.4809로 증가하였다.