• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.1
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• pp.40-50
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• 2011

A two-dimensional (2D) analytical model for the potential distribution and threshold voltage of short-channel ion-implanted GaAs MESFETs operating in the sub-threshold regime has been presented. A double-integrable Gaussian-like function has been assumed as the doping distribution profile in the vertical direction of the channel. The Schottky gate has been assumed to be semi-transparent through which optical radiation is coupled into the device. The 2D potential distribution in the channel of the short-channel device has been obtained by solving the 2D Poisson's equation by using suitable boundary conditions. The effects of excess carrier generation due to the incident optical radiation in channel region have been included in the Poisson's equation to study the optical effects on the device. The potential function has been utilized to model the threshold voltage of the device under dark and illuminated conditions. The proposed model has been verified by comparing the theoretically predicted results with simulated data obtained by using the commercially available $ATLAS^{TM}$ 2D device simulator.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.888-891
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• 2011

In this paper, drain induced barrier lowering(DIBL) has been analyzed as one of short channel effects occurred in double gate(DG) MOSFET. The DIBL is very important short channel effects as phenomenon that barrier height becomes lower since drain voltage influences on potential barrier of source in short channel. The analytical potential distribution of Poisson equation, validated in previous papers, has been used to analyze DIBL. Since Gaussian function been used as carrier distribution for solving Poisson's equation to obtain analytical solution of potential distribution, we expect our results using this model agree with experimental results. The change of DIBL has been investigated for device parameters such as channel thickness, oxide thickness and channel doping intensity.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.91-93
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• 2008

The organic field-effect transistors with step-edge structure were fabricated. Source and drain electrodes were obliquely deposited by vacuum evaporation. The step-edge of the gate electrode serve as a shadow mask, and the short channel is formed at the step-edge. The excellent device performances were obtained.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.10
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• pp.1-6
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• 2010

In this paper, RF Capacitance-Voltage(C-V) curve of short-channel MOSFET has been extracted from the room temperature to $225^{\circ}C$ using a RF method based on measured S-parameter data, and its high-temperature dependent characteristics are empirically modeled. It is observed that the voltage shift according to the variation of temperature in the weak inversion region of RF C-V curves is lower than the threshold voltage shift, but it is confirmed that this phenomenon is unexplainable with a long-channel theoretical C-V equation. The new empirical equation is developed for high-temperature dependent modeling of short-channel MOSFET C-V curves. The accuracy of this equation is demonstrated by observing good agreements between the modeled and measured C-V data in the wide range of temperature. It is also confirmed that the channel capacitance decreases with increasing temperature at high gate voltage.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.907-910
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• 2008

The effect of channel length reduction on the electrical characteristics of self-aligned polysilicon TFTs has been investigated by combining experimental characteristics and 2-D numerical simulations. The role of drain induced barrier lowering and floating body effects has been carefully analized using numerical simulations.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.691-694
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• 2003

Density gradient method is used to analyze the quantum effect in MOSFET, Quantization effect in the poly gate leads to a negative threshold voltage shift, which is opposed to the positive shift caused by quantization effect in the channel. Quantization effects in the poly gate are investigated using the density gradient method, and the impact on the short channel effect of double gate device is more significant.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.3
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• pp.472-477
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• 1987

In order to prevent the short-channel effects due to threshold voltage adjustment implantation in conventional n+ doped silicon gate process, a new approach involving automatic doping of polycide by boron during source and drain implantation is introduced. P-MOSFET devece fabricated by theis approach shows improved short channel characteristics than conventional device with n+ doped gate. Some concerns of adopting this approach in CMOS technology are addressed togetheer with some suggestions.

• Journal of Advanced Navigation Technology
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• v.10 no.1
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• pp.7-12
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• 2006

In this paper, we investigated performance for 5.8GHz dedicated short range communication system using OFDM which will be applied to Intelligent transportation system services. The maximum speed of a vehicle in DSRC channel is very fast as 180km/h, so a service time is very short to serve a various traffic information if hand-off is not occurred. Therefore higher bit rate is required to proved advanced and intelligent service to the drivers of various vehicle and the data transmission rate of the next generation DSRC system if being promoted over 10Mbps. The signals received in Racian channel have been simulated using the computer simulator. For performance improvement, BCH coding scheme are adopted.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.12
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• pp.17-23
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• 2010

In this paper, a new analytical model for deriving the threshold voltage of a short-channel bulk-type MOSFET is suggested. Using the Fourier coefficient method, the Laplace equation in the oxide region and the Poisson equation in the depleted silicon region have been solved two-dimensionally. Making use of them, the minimum surface potential is derived to describe the threshold voltage. Simulation results show good agreement with the dependencies of the threshold voltage on the various device parameters and applied bias voltages.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.8
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• pp.17-24
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• 2004

Quantum effects in the poly-gate are analyzed in two dimensions using the density-gradient method, and their impact on the short-channel effect of double-gate MOSFETs is investigated. The 2-D effects of quantum mechanical depletion at the gate to sidewall oxide is identified as the cause of large charge-dipole formation at the corner of the gate. The bias dependence of the charge dipole shows that the magnitude of the dipole peak-value increases in the subthreshold region and there is a large difference in carrier and potential distribution compared to the classical solution. Using evanescent-nude analysis, it is found that the quantum effect in the poly-gate substantially increases the short-channel effect and it is more significant than the quantum effect in the Si film. The penetration of potential contours into the poly-gate due to the dipole formation at the drain side of the gate corner is identified as the reason for the substantial increase in short-channel effects.