• Journal of Electrical Engineering and Technology
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• 제2권4호
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• pp.525-531
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• 2007

Ni(75 wt.%)-Cr(20 wt.%)-Al(3 wt.%)-Mn(4 wt.%)-Si(1 wt.%) alloy thin films were prepared using the DC magnetron sputtering process by varying the sputtering conditions such as power, pressure, substrate temperature, and post-deposition annealing temperature in order to fabricate a precision thin film resistor. For all the thin film resistors, sheet resistance, temperature coefficient of resistance (TCR), and crystallinity were analyzed and the effects of sputtering conditions on their properties were also investigated. The oxygen content and TCR of Ni-Cr-Al-Mn-Si resistors were decreased by increasing the sputtering pressure. Their sheet resistance, TCR, and crystallinity were enhanced by elevating the substrate temperature. In addition, the annealing of the resistor thin films in air at a temperature higher than $300^{\circ}C$ lead to a remarkable rise in their sheet resistance and TCR. This may be attributed to the improved formation of NiO layer on the surface of the resistor thin film at an elevated temperature.

• 반도체디스플레이기술학회지
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• 제10권4호
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• pp.43-46
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• 2011

In this study, we investigated the effects of the post Ar plasma treatment at different RF powers for various durations on electrical, structural, and optical properties of relatively thin Al-doped zinc oxide films. The sheet resistance was observed to decrease rapidly for the first 5min, beyond which the resistance apparently saturated. As the RF power increased, the grain size and the interplanar distance of (002) planes also increased. The observed decrease in sheet resistance was stated to be a consequence of Al and/or Zn interstitials as well as grain growth. It was also found that Ar plasma treatment increased the transmittance of Al-doped zinc oxide films in most of the visible light range below the blue light.

• 반도체디스플레이기술학회지
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• 제19권3호
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• pp.36-42
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• 2020

Silver nanowire (AgNW) random-meshes with high transmittance, low sheet resistance, and high oxidation stability and flexibility were fabricated using solution-based processes. The random-mesh structure was obtained by forming bubbles whose sizes and densities were controlled using a corona treatment of polyethylene terephthalate (PET) substrates. To reduce the sheet resistance of the fabricated AgNW electrode, a washing process using ethanol solution was performed. In addition, nickel (Ni) was coated on AgNW to improve resistance to oxidation. The effects of corona treatment and Ni-coating on the transmittance, sheet resistance, oxidation stability, and flexibility of the AgNW electrodes were investigated.

• Corrosion Science and Technology
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• 제14권5호
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• pp.207-212
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• 2015

The purpose of this research was to synthesize fluorine modified waterborne polyurethane dispersion (F-WPU) by soap-free (internal emulsifier) emulsion polymerization techniques, to prepare coating solution based on fluorine modified waterborne polyurethane dispersion (F-WPU) and to compare the chemical and thermo-mechanical properties on the electrogalvanized steel sheet. Environmentally friendly F-WPU was prepared with a fluorinated polyol containing 60 wt% of fluorine. There are various ways of combining a wide variety of fluorinated polyols and diisocyanate to exhibit novel properties of waterborne polyurethane dispersion. Components of coating solution were largely divided into 4 kinds i.e., F-WPU, acrylic emulsion, silane coupling agent, and colloidal silicate. F-WPU coating solution on the electro-galvanized steel sheet showed excellent properties of corrosion resistance, alkali resistance and heat resistance, as compared to other coating solutions using a general waterborne resin. The F-WPU coating solution's reliable effects are possibly due to the fluorine atoms incorporated even in a small amount of F-WPU.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2011년도 춘계학술대회 논문집
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• pp.1045-1046
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• 2011

• 한국전기전자재료학회논문지
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• 제22권1호
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• pp.67-73
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• 2009

The stress-strain behavior and its effects on the crack initiation and growth of ITO film on PET substrate with a sheet resistance of 45 ohms/sq were investigated. Electrical resistance increased gradually at the strain of 0.7% in the elastic to plastic transition region of the stress strain curves. Numerous cracks were observed after 1% strain and the increase of the resistance can be linked to the cracking of ITO thin films. The onset strain for the increase of resistance increased with increasing strain rate, suggesting the crack initiation is dependent on the strain rate. Upon loading, the initial cracks perpendicular to the tensile axis were observed and propagated the whole sample width with increasing strain. The spacing between horizontal cracks is thought to be determined by the fracture strength and the interfacial strength between ITO and PET. The crack density increased with increasing strain. The spacing between horizontal cracks (perpendicular to the stress axis) increased with decreasing strain rate, The increase of crack density with decreasing strain rate can be attributed to the higher fraction of the plastic strain to the total strain at a given total strain. As the strain increased over 5% strain, cracks parallel to the stress axis were developed and increased in number with strain, accompanied by drastic increases of resistance.

• Journal of Welding and Joining
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• 제30권6호
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• pp.68-73
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• 2012

Nowadays, car manufacturers tried to improve automotive fuel efficiency, and applied many high strength steels such as AHSS or UHSS to car bodies. Therefore, the number of steel combinations for the resistance spot welding are dramatically increased and the need for weldability evaluation of these combinations are also required. In this study, we suggest the lobe curve using FEM simulations for DP780 steel with 1.0t, 1.4t. The lobe curves which could expressed weldablity and optimal welding condition were obtained according to 6 steel combinations. There were two combinations for same steel sheet which were DP780 1.0t, DP780 1.4t. Dissimilar steel sheet combination with different thickness was 1.0t and 1.4t of DP780. Different steel combinations were DP780 1.0t and SPRC440 1.0t, and DP780 1.0t and DP590 1.0t. Finally dissimilar combinations was and DP780 1.0t and DP590 1.4t. The trend of low boundary and high boundary variation of lobe curve were analyzed with a viewpoint of the contact resistance and the heat input.

• 전자공학회논문지A
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• 제29A권11호
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• pp.84-90
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• 1992

The dependence of electrical characteristics of RuO$_2$-based thick film resistors on the RuO$_2$ contents, glass composition variation and the firing temperatures was measured. The sheet resistance of resistors decreased as the contents of RuO$_2$ increased and at firing temperatures higher than C, the sheet resistance increased as the firing temperature increased. In case of using lead borosilicate glass-containing $Bi_{2}O_{3}$, the sheet resistance decreased as the contents of $Bi_{2}O_{3}$ increased. TCR changes from negative to positive values as RuO$_2$ contents increased and from positive to negative values as the firing temperature increased. TCR increased to positive values as $Bi_{2}O_{3}$ increased in the glass.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.95-97
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• 2004

We studied a low temperature ion doping process for poly-Si Thin Film Transistor (TFT) on plastic substrates. The ion doping process was performed using an ion shower system, and subsequently, excimer laser annealing (ELA) was done for the activation. We have studied the crystallinity of Si surface at each step using UV-reflectance spectroscopy and the sheet resistance using 4-point probe. We found that the temperature has increased during ion shower doping for a-Si film and the activation has not been fulfilled stably because of the thermal damage against the plastic substrate. By trying newly a pulsed ion shower doping, the ion was efficiently incorporated into the a-Si film on plastic substrate. The sheet resistance decreased with the increase of the pulsed doping time, which was corresponded to the incorporated dose. Also we confirmed a relationship between the crystallinity and the sheet resistance. A sheet resistance of 300 ${\Omega}$/sq for the Si film of 50nm thickness was obtained with a good reproducibility. The ion shower technique is a promising doping technique for ultra low temperature poly-Si TFTs on plastic substrates as well as those on glass substrates.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.124.1-124.1
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• 2011

결정질 태양전지에서 도핑(Doping)은 반도체(Semiconductor)의 PN 접합(Junction)을 형성하는 중요한 역할을 한다. 도핑은 반도체에 불순물(Dopant)을 주입하는 공정으로 고온에서 진행되며 온도는 중요한 변수(Parameter)로 작용한다. 본 연구에서는 여러 가지 도핑 방법 중 SOD(Spin-On Dopant)를 이용하여 온도에 따른 도핑 결과와 특성을 분석 하였다. P-type 웨이퍼(Wafer)에 SOD를 이용하여 불순물을 증착 후 Hot-plate에서 15분간 Baking 하였다. Baking된 웨이퍼는 노(Furnace)에 넣고 $860^{\circ}C{\sim}880^{\circ}C$까지 $10^{\circ}C$씩 가변하였다. 각각의 조건에 대해 Lifetime과 Sheet Resistance을 측정하였고, 그 결과 $880^{\circ}C$에서의 Lifetime이 $23.58{\mu}s$로 $860^{\circ}C$에 비해 235.8% 증가하여 가장 우수 하였으며, Sheet Resistance 또한 $68{\Omega}$/sq로 $860^{\circ}C$에서 가장 우수하게 측정되었다. SOD의 속도 가변에 따른 특성 변화를 보기 위해 온도는 $880^{\circ}C$에 고정한 후 속도를 3000rpm~4500rpm까지 500rpm간격으로 1시간동안 실험한 결과 rpm 속도에 따른 lifetime 변화는 거의 없었으며, Sheet Resistance는 3000rpm에서 $63{\Omega}$/sq로 가장 우수 하였다. 본 연구를 통해 온도와 Spin rpm에 따른 특성을 확인한 결과 온도가 높을 때 Sheet Resistance가 가장 안정화 되며, lifetime이 더욱 우수한 것을 확인할 수 있었다.