• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.241-244
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• 2002

The dependence of NiSi properties such as sheet resistance and cross-sectional profile on the dopants was characterized. There was little difference of sheet resistance between various dopants such as As, p, BF2 and B just after R'n formation of NiSi. However, the NiSi properties showed strong dependence on the dopants when thermal treatment was applied after RTf formation. BFa .implanted silicon was the best stable property while As implanted one was the worst. The main reason of the excellence property of BF2 sample is believed to be the retardation of Ni diffusion by the F. Therefore, retardation of Ni diffusion is very desirable fur high performance NiSi technology.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.245-248
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• 2002

In this paper, the influence of Si surface damage on the NiSi formation has been characterized. The silicon surface is damaged using ion beam type spotter. Then, the effect of H2 anneal and TiN capping layer on the damaged has also been analyzed. The sheet resistance of NiSi formed on damaged Si increased rapidly as the damaging time increases while thermal stability of damaged NiSi was stabler than the undamaged one. In the case when H\ulcorner anneal and TiN capping layer were applied together, the characteristics of NiSi shows a little improvement of the sheet resistance.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.671-674
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• 2003

본 논문에서는 Cobalt interlayer 와 Titanium Nitride(TiN) capping layer를 Ni SALICIDE의 단점인 열 안정성과 sheet resistance 와 series 저항을 감소시키는데 적용하여 0.lum 급 CMOS 소자의 특성을 연구하였다. 첫째로, Ni/Si 의 interface 에 Co interlayer 를 증착하여 Nickel Silicide의 단점인 열 안정성 평가인 700℃, 30min의 furnace annealing 후에 낮은 sheet resistance와 누설전류를 줄일 수 있었다. 두번째로, TiN caping layer를 적용하여 실리사이드 형성시 산소와의 반응을 막아 실리사이드의 표면특성을 향상시켜 누설전류의 특성을 개선하였다. 결과적으로 소자의 구동전류 향상, 누설전류 저하, 낮은 면저항으로 소자의 특성을 개선하였다.

• 대한전자공학회논문지
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• 제24권6호
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• pp.969-974
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• 1987

High value sheet resistance (Rs, 350 \ulcorner/ -80 K \ulcorner/ ) borom implanted polysilicon resistors were fabricated under process condition compatible with bipolar integrated circuits fabrication. This paper includes the effect of contact ion implantation on Rs and the effect of electron gun(e-gun) deosition vs. non e-gun evaporated metal contacts on the Rs. From results, we observed that the contact ion implanted samples showed higher Rs value than those without contact ion implantation. Also, it was shown that there is noticeable amount of Rs degradation for e-gun samples, while sputtered samples expressed little Rs degradation after PtSi was formed.

• 전자공학회논문지D
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• 제35D권7호
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• pp.56-62
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• 1998

Polysilicon resistors with high thermal stability have been fabricated by a new mixed process using POCl$_{3}$ doping and arsenic implantation. Varous temeprature coefficients, which range form 510 ppm/.deg. C to -302 ppm/.deg. C, were shown from the fabricated polysilicon resistors with sheet resistance of 58~107 .ohm./sq in the operating temeprature of 27~150.deg. C. The temperature coefficient of the polysilicon resistor by the mixed technology was about 4.3 times as low compared to the conventional polysilicon resistor using POCl$_{3}$ doped single process with the same sheet resistance of 75.ohm./sq. In addition, the mixed technology can be applied to obtain nearly zero temperature coefficient for polysilicon resistors which are reliable and insensitive to temperature.

• 한국전기전자재료학회논문지
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• 제17권5호
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• pp.476-480
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• 2004

The characteristics of antimony implants are relatively well-known. Antimony has lower diffusion coefficient, shorter implantation range, and smaller scattering as compared with conventional dopants such as phosphorous and arsenic. It has been commonly used in the doping of buried layer in Bi-CMOS process. In this paper, characteristics and appropriate condition of monitoring in antimony implant beam tuning using Sb$_2$O$_3$were investigated to get a reliable process. TW(Thema Wave) and R$_{s}$(Sheet Resistance) test were carried out to set up condition of monitoring for stable operation through the periodic inspection of instruction condition. The monitoring was progressed at the point that the slant of R$_{s}$ varied significantly to Investigate the variation of instruction accurately.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.314.1-314.1
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• 2014

The properties of Ni/Au Ohmic contacts formed on nonpolar a-plane GaN grown on r-plane sapphire substrate with different tilt angles are investigated using current-voltage (I-V) measurements. To investigate the effects of pattern direction and size on Ohmic contact properties of a-plane GaN, transmission line method (TLM) patterns are formed either along c-axis and m-axis on nonpolar GaN surface with different size. I-V measurement results show that the size of TLM pattern and formation direction of electrode have an effect on the electrical properties of a-plane GaN. The large sized patterns show the relatively lower sheet resistance compared to the small sized patterns. In addition, the sheet resistance of a-plane GaN along m-axis shows lower values than that along the c-axis. Finally, the effects of miscut angle of r-sapphire substrate ($0.2^{\circ}$, 0.4oand $0.6^{\circ}$) on electrical properties of a-plane GaN will be discussed.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.332.2-332.2
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• 2014

OLED 소자가 소형화됨에 따라 Flexible display를 넘어 Foldable display를 연구 중이며 동시에 신뢰성 및 수명이 중요시 되고 있다. 따라서 본 연구에서는 신뢰성 및 수명 평가에 대한 한 가지 방법으로 Bending test를 이용하여 소자의 Resistivity 변화를 측정하여 소자의 신뢰성을 확인 하여 보았다. Flexible substrate위에 Ag와 Al을 Cross bridge structure로 각각 증착한 후 bending 시간에 따른 Sheet resistance (Rsh)와 Resistivity (비저항)을 분석 하였다. 100시간 동안의 bending test결과 Ag전극의 Rsh는 $0.104{\Omega}$에서 $0.098{\Omega}$으로 5.67% 감소하였고 비저항은 5.70% 감소하였다. Al전극의 Rsh는 $0.091{\Omega}$에서 $0.063{\Omega}$으로 30.4% 감소하였고 비저항은 30.3% 감소하였다. Foldable에서는 저항 변화가 크게 되면 접히는 부분의 흐르는 전류가 많아지게 되어 소자의 저하를 발생시킨다. 저항변화가 거의 없다는 것은 물질의 안정성이 좋다고 할 수 있다. 실험 결과 Ag의 저항 변화가 Al보다 작으므로 Ag가 Flexible 관련 물질로 더 유용하다는 것을 확인 할 수 있다.

• Korea-Australia Rheology Journal
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• 제14권2호
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• pp.71-76
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• 2002

Metal thin films, which are indispensable constituents of ULSI (Ultra Large Scale Integration) circuits, have been fabricated by physical or chemical methods. However, these methods have a drawback of using expensive high vacuum instruments. In this work, the fabrication of tungsten metal film by spin coating was investigated. First of all, inorganic peroxopolytungstic acid (W-IPA) powder, which is soluble in water, was prepared by dissolving metal tungsten in hydrogen peroxide and by evaporating residual solvent. Then, the solution of W-IPA was mixed with organic solvent, which was spin-coated on wafers. And then, tungsten metal films, were obtained after reduction procedure. By selecting an appropriate organic solvent and irradiating UV, the sheet resistance of the tungsten metal film could be remarkably reduced.

• 소성∙가공
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• 제4권3호
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• pp.245-256
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• 1995

SMC(Sheet Molding Compound), a thermoset composite material which consists of unsaturated polyester resin, fiberglass strands, fillers, and various chemical additives for curing agent, has been widely used in fabrication of structural components. The mechanical properties of molded SMS parts are strongly dependent on material flow results during compression molding process, while such flow in molds is affected by material characteristics. For numerical simulation of SMC molding process, estimation of material property of SMC must be accomplished. In this study, flow resistance of SMC was estimated through a simple compression test using a lubricant with grease oil under the constant strain rate condition at various temperatures and the result was compared with other material data available in the literature. The accuracy of the experimentally determined flow resistance was tested by finite element analyses of compression molding of SMC. Simulation results were compared with experimental results under the plane strain condition.