• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.123-123
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• 2011

알루미늄은 경량 금속으로 부식 저항력이 높아 철을 부식으로부터 보호하기 위한 표면처리 소재로 사용되고 있다. 철의 부식을 방지하기 위해서 알루미늄을 코팅하는 경우, 코팅 방법은 용융도금법이 주로 사용되고 있으며, 알루미늄을 빛의 반사막으로 활용하는 경우 진공 중에서 물리기상증착(physical vapor deposition; PVD)법을 사용하기도 한다. 알루미늄 박막을 물리기상 증착으로 코팅하면 박막성장 초기에 핵(nucleus)을 형성하고, 형성된 핵을 중심으로 주상정(column)으로 박막이 성장하는 것이 일반적이다. 알루미늄 박막의 주상정과 주상정 사이에 공극(pore)이 존재하기 때문에 알루미늄 박막을 부식방지 막으로 이용하기 위해서는 두께를 증가시켜야 한다. 본 연구에서는 스퍼터링(unbalanced magnetron sputtering)을 이용하여 치밀한 조직을 갖는 알루미늄 박막을 코팅할 수 있는 공정변수를 도출하고, 치밀한 알루미늄 조직이 철의 부식에 미치는 영향을 평가하였다. 기판은 냉연강판(cold rolled steel sheet)이 사용되었으며, 알루미늄 타겟의 크기는 직경 4 inch이었다. 알루미늄 박막의 미세조직과 밀도에 영향을 주는 공정변수를 확인하기 위해서 스퍼터링 파워, 공정 압력, 외부 자기장 세기 등의 조건을 변화시켜 코팅을 실시하였다. 알루미늄 박막의 밀도 변화에 가장 큰 영향을 준 공정변수는 외부 자기장의 세기와 방향이었다. 알루미늄 박막이 약 3 ${\mu}m$의 두께로 코팅된 냉연강판을 염수분무시험(salt spray test, 5% NaCl)으로 부식특성을 평가한 결과, 시험을 시작한 후 120시간 후에도 적청이 발생하지 않았다. 이러한 결과는 기존의 동일한 두께를 갖는 알루미늄이 코팅된 강판의 내부식 특성의 2배의 성능을 보여준다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 기술교육전문연구회
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• pp.58-61
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• 2003

ITO (indium tin oxide) thin films on PET (polyethylene terephthalate) substrate have been deposited by a dc reactive magnetron sputtering without heat treatments such as substrate heater and post heat treatment. Each sputtering parameter during the sputtering deposition is an important factor for the high quality of ITO thin films deposited on polymeric substrate. Particularly, the material, electrical and optical properties of as-deposited ITO oxide films are dominated by the ratio of oxygen partial pressure. As the experimental results, the excellent ITO films are prepared on PET substrate at the operating conditions as follows: operating pressure of 5 mTorr,target-substrate distance of 45 mm, dc power of 20-30 W, and oxygen gas ratio of 10 %. The optical transmittance is above 80 % at 550 nm, and the sheet resistance and resistivity of films are $24\;{\Omega}$/square and $1.5{\times}10^{-3}\;cm$, respectively.

• Journal of Welding and Joining
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• 제23권4호
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• pp.59-65
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• 2005

The resistance spot welding is one of the most commonly used welding process for joining the sheet metal in automotive manufacturing process due to higher deposition rates and higher economy achieved. Control variables in the resistance spot welding for achieving high quality are welding current, welding force and welding time. Generally at the manufacturing scene, welding current Vs welding time lobe diagram is used to estimate weldability because controlling welding force is not practical due to economical reasons. However new automotive steel plates have been developed to make lightweight automobiles and to improve resistance against rusting. Also the weldability of these steel plates are worst than the existing steel plates because of changing bare metal and surface plating effect. In consequence of above mentioned reasons, it is necessary to use welding force to present the lobe diagram. In this study, we obtained the welding force Vs welding current lobe diagram for commonly used GA steel plate and found that the second order repression model of tensile shear strength was useful in reducing the number of experiments, and the indentation, and thickness change during welding were used as a response to estimate quantitatively expulsion.

• 한국분말재료학회지
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• 제27권3호
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• pp.256-267
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• 2020

Metal additive manufacturing (AM) technologies are classified into two groups according to the consolidation mechanisms and densification degrees of the as-built parts. Densified parts are obtained via a single-step process such as powder bed fusion, directed energy deposition, and sheet lamination AM technologies. Conversely, green bodies are consolidated with the aid of binder phases in multi-step processes such as binder jetting and material extrusion AM. Green-body part shapes are sustained by binder phases, which are removed for the debinding process. Chemical and/or thermal debinding processes are usually devised to enhance debinding kinetics. The pathways to final densification of the green parts are sintering and/or molten metal infiltration. With respect to innovation types, the multi-step metal AM process allows conventional powder metallurgy manufacturing to be innovated continuously. Eliminating cost/time-consuming molds, enlarged 3D design freedom, and wide material selectivity create opportunities for the industrial adoption of multi-step AM technologies. In addition, knowledge of powders and powder metallurgy fuel advances of multi-step AM technologies. In the present study, multi-step AM technologies are briefly introduced from the viewpoint of the entire manufacturing lifecycle.

• 한국표면공학회지
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• 제30권6호
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• pp.406-411
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• 1997

Transparent conductive thin films have found many applications in active and passive electronic and opto-electronic devices such as flat panel display electrode, solar cell electrode and window heat mirror, etc. Low resistivity and high transmittance of these films can beotained by controlling deposition parameters which are oxygen partial pressure, substrate temperature and dopant concentration. In this study, non-stoichiometric and Sb-doped thin electrical properties of undoped films have been degraded with increase of substrate temperature and optical properties have been improved in Sb-doped films. The resistivity of $2.5\times10^{-3}\Omega\textrm{cm}$,/TEX>, average transmittance of 80% and sheet resistance of 130$\Omega$/$\square$ at thickess of 2000 $\AA$ could be obrained at optmal condimal conditions which were at $400^{\circ}C$ of substrate temperature, 58% of oxygen partial pressure and 5% of Sb doping concentration.

• 한국세라믹학회지
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• 제52권3호
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• pp.224-227
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• 2015

In this work, the properties of Indium-Zinc-Tin-Oxide (IZTO) thin films, deposited on polyethylene naphthalate (PEN) with a $SiO_2$ buffer layer, were analyzed with different working pressures. After depositing the $SiO_2$ buffer layer on PEN substrates by plasma-enhanced chemical vapor deposition (PECVD), the IZTO thin films were deposited by RF magnetron sputtering with 1 to 7-mTorr working pressure. All the IZTO thin films show an amorphous structure, regardless of the working pressure. The best morphological, electrical, and optical properties are obtained at 3-mTorr working pressure, with a surface roughness of 2.112-nm, a sheet resistance of $8.87-{\Omega}/sq$, and a transmittance at 550-nm of 88.44%. These results indicate that IZTO thin films deposited on PEN have outstanding electrical and optical properties, and the PEN plastic substrate is a suitable material for display devices.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1542-1545
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• 2009

For the application of flexible substrate to future display and new transparent devices, indium tin oxide (ITO) thin film was formed on polycarbonate(PC) substrate at room temperature by in-line sputter system. During the ITO sputtering, Ar and $O_2$ reaction gas were fixed at a constant value and the process pressure was varied from 3 to 7 mtorr. From the electrical and the optical properties of sputtered ITO films, the sheet resistances of as-deposited ITO films varied with a different pressure and the optical transmittances of the ITO films at visible wavelength were maintained above 85%. The results are considered to be due to the saturation of $O_2$ atoms from reaction in ITO film.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1437-1439
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• 2009

Electrical and optical properties of $SiO_2$-doped ZnO (SZO) films on the corning 7059 glass substrates by using rfmagnetron sputtering method are investigated. The deposition rate becomes maximum near 3 wt.% and gradually decreases when the $SiO_2$ content further increases. The growth rates at 3 wt.% is $4^{\circ}$A/s. We found that the average transmittance of all films is over 80% in the wavelength range above 500 nm. The optical band gap decreases from 3.52 to 3.33 eV with an increase in thickness. X-ray diffraction patterns show that the film with a relatively low $SiO_2$ content (< 4 wt.%) is amorphous. SZO films at the $SiO_2$ contents of 2 wt.% shows the resistivity of about $3.8{\times}10^{-3}{\cdot}cm$. The sheet resistance decreases with increasing the heat treatment temperature.

• 한국막학회:학술대회논문집
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• 한국막학회 1999년도 The 7th Summer Workshop of the Membrane Society of Korea
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• pp.43-47
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• 1999

Pd-ceramic composite membranes and catalytic membrane reactors(CMR) have been studied for hydrogen purification and recovery in th fusion reactor fuel cycle. The development of techniques for coating microporous ceramic tubes with Pd and Pd/Ag layers is described: composite membranes have been produced by electroless deposition (Pd/Ag film of 10-20${\mu}{\textrm}{m}$) and rolling of thin metal sheet (Pd and Pd/ Ag membranes of 50-70 ${\mu}{\textrm}{m}$). Experimental results on electroless membranes showed that the metallic film presented some defects and the membranes had not complete hydrogen selectivity . Then the catalytic membrane reactors with electroless membranes can be applied for some industrial processes that do not require a complete separation of the hydrogen (i.e. in the dehydrogenation of hydrocarbons). The rolled thin Pd/Ag membranes separated the hydrogen from the other gas with a complete selectivity and exhibited a slightly larger (about a factor 1.7) mass transfer resistance with respect to the electroless membranes. Experimental tests confirmed the good performances in terms of durability.

• 한국세라믹학회지
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• 제52권5호
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• pp.304-307
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• 2015

To reduce the lateral conduction loss of thin-film-processed cathodes, the microstructure of the thin-film cathode is engineered to contain a denser bridging layer in the middle. By doing so, the characteristic crack-like pores that separate the cathode domains in thin-film-processed cathodes and hamper lateral conduction are better connected and, as a result, the sheet resistance of the cathode is effectively reduced by a factor of 5. This induces suppression of the lateral conduction loss and expansion of the effective current collecting area; the cell performance is improved by more than 30%.