• Korean Chemical Engineering Research
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• 제61권4호
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• pp.576-583
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• 2023

본 연구에서는 전극의 전기 전도도 증대와 젖산 산화반응의 부산물인 과산화수소 생성 완화가 젖산 산화효소 전극 성능에 미치는 영향을 조사하였다. 유연성 있는 탄소종이 표면을 단일벽 탄소나노튜브로 개질하여 전극의 전기 전도도를 향상시켰다. 카탈라아제를 도입하여 젖산 산화반응에서 발생하는 과산화수소를 제거하였다. 젖산 산화효소와 카탈라아제가 동시에 고정화된 탄소종이 전극은 젖산 산화효소만 고정화된 탄소종이 전극보다 1.7배 많은 전류를 생성하였다. 단일벽 탄소나노튜브로 개질된 탄소종이 표면에 젖산 산화효소와 카탈라아제가 동시에 고정화된 전극은 171 µA의 전류를 생산하였는데, 이는 탄소종이 표면에 젖산 산화효소만 고정화된 전극이 생산하는 전류보다 2배 높은 값이다. 최적화된 전극은 젖산 농도가 20 mM까지 선형반응을 보여 센서용 전극으로 사용 가능함을 확인하였다.

• 센서학회지
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• 제33권1호
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• pp.40-47
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• 2024

The creation of vertically aligned one-dimensional (1D) nanostructures through the decoration of n-type tin oxide (SnO₂) on p-type chromium oxide (Cr₂O₃) constitutes an effective strategy for enhancing gas sensing performance. These heterostructures are deposited in multiple stages using a glancing angle deposition technique with an electron beam evaporator, resulting in a reduction in the surface porosity of the nanorods as SnO₂ is incorporated. In comparison to Cr₂O₃ films, the bare Cr₂O₃ nanorods exhibits a response 3.3 times greater to 50 ppm H₂S at 300℃, while the SnO₂-decorated Cr₂O₃ nanorods demonstrate an eleven-fold increase in response. Furthermore, when subjected to various gases (CH₄, H₂S, CO₂, H₂), a notable selectivity toward H₂S is observed. This study paves the way for the development of p-type semiconductor sensors with heightened selectivity and sensitivity towards H₂S, thus advancing the prospects of gas sensor technology.

• Nuclear Engineering and Technology
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• 제41권5호
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• pp.723-728
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• 2009

The response property of the CZT detector ($5{\times}5{\times}5\;mm^3$), widely used in photon spectroscopy, was evaluated by considering the charge collection efficiency, which depends on the interaction position of incident radiation, A quantitative analysis of the energy spectra obtained from the CZT detector was also performed to investigate the tail effect at the low energy side of the full energy peak. The collection efficiency of electrons and holes to the two electrodes (i.e., cathode and anode) was calculated from the Hecht equation, and radiation transport analysis was performed by two Monte Carlo codes, Geant4 and MCNPX. The radiation source was assumed to be 59.5 keV gamma rays emitted from a $^{241}Am$ source into the cathode surface of this detector, and the detector was assumed to be biased to 500 V between the two electrodes. Through the comparison of the results between the Geant4 calculation considering the charge collection efficiency and the ideal case from MCNPX, an pronounced difference of 4 keV was found in the full energy peak position. The tail effect at the low energy side of the full energy peak was confirmed to be caused by the collection efficiency of electrons and holes. In more detail, it was shown that the tail height caused by the charge collection efficiency went up to 1000 times the pulse height in the same energy bin at the calculation without considering the charge collection efficiency. It is, therefore, apparent that research considering the charge collection efficiency is necessary in order to properly analyze the characteristics of CZT detectors.

• 대한전자공학회논문지SP
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• 제44권3호
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• pp.61-69
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• 2007

본 논문에서는 지문 인식에 있어서 정확한 특징점 추출이 가능하도록 지문 이미지의 전처리를 개선하는 새로운 방법을 제안하였다. 지문 이미지는 자동 지문인증 시스템의 인증률 향상에 가장 중요한 요소이다. 본 논문에서는 방향지향성 필터에 기초한 새로운 전처리 알고리즘을 적용하여 지문 이미지의 유효 융선 벡터와 융선 확률을 이용하여 품질이 낮은 지문 이미지를 지문인식에 더 적합하도록 품질을 항상시켰다. 품질이 좋지 않은 지문 이미지는 융선 구조가 불명확하고, 융선 사이에 잡음 점들이 많이 포함되어 있기 때문에 제안된 지문 이미지 향상 알고리즘을 통해서 그 잡음이 제거되고 융선이 더 선명하게 추정되었다. 이로 인하여 융선의 지역적 방향과 주파수를 더 정확히 추출 할 수 있다. 이 결과는 지문인식의 후처리 알고리즘에서 특징점을 정확하게 추출 할 수 있게해준다. 아울러 가짜 특징점이 생길 확률이 낮아지므로 이를 제거 할 때 함께 없어지는 진짜 특징점 수도 감소 시켜 준다. 두 가지 방법으로 이루어진 실험에서는 반도체 지문센서로부터 얻어진 이미지를 이용한 인증률 테스트의 향상도 측정방법과, IEEE 공인인증 데이터베이스인 FVC2002 DB3 지문이미지 데이터를 이용하여 기존의 알고리즘과 제안된 알고리즘의 인증률을 측정하였다.

• 산업경영시스템학회지
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• 제39권3호
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• pp.147-155
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• 2016

Industry 4.0's goal is the 'Smart Factory' that integrates and controls production process, procurement, distribution and service based on the fundamental technology such as internet of the things, cyber physical system, sensor, etc. Basic requirement for successful promotion of this Industry 4.0 is the large supply of semiconductor. However, company I who produces dicing blades has difficulty to meet the increasing demand and has hard time to increase revenue because its raw material includes high price diamond, and requires very complex and sensitive process for production. Therefore, this study is focused on understanding the problems and presenting optimal plan to increase productivity of dicing blade manufacturing processes. We carried out a study as follows to accomplish the above purposes. First, previous researches were investigated. Second, the bottlenecks in manufacturing processes were identified using simulation tool (Arena 14.3). Third, we calculate investment amount according to added equipments purchase and perform economic analysis according to cost and sales increase. Finally, we derive optimum plan for productivity improvement and analyze its expected effect. To summarize these results as follows : First, daily average blade production volume can be increased two times from 60 ea. to 120 ea. by performing mixing job in the day before. Second, work flow can be smoother due to reduced waiting time if more machines are added to improve setting process. It was found that average waiting time of 23 minutes can be reduced to around 9 minutes from current process. Third, it was found through simulation that the whole processing line can compose smoother production line by performing mixing process in advance, and add setting and sintering machines. In the course of this study, it was found that adding more machines to reduce waiting time is not the best alternative.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권2호
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• pp.143-149
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• 2008

A novel compact model for a five-port transformer balun is proposed for the efficient circuit design of hybrid balun. Compared to the conventional model, the proposed model provides much faster computation time and more reasonable values for the extracted parameters. The hybrid balun, realized in $0.18\;{\mu}m$ CMOS, achieves 2.8 dB higher gain and 1.9 dB lower noise figure than its passive counterpart only at a current consumption of 0.67 mA from 1.2 V supply. By employing the hybrid balun, a differential zero-IF receiver is designed in $0.18\;{\mu}m$ CMOS for IEEE 802.15.4 ZigBee applications. It is composed of a differential cascode LNA, passive mixers, and active RC filters. Comparative investigations on the three receiver designs, each employing the hybrid balun, a simple transformer balun, and an ideal balun, clearly demonstrate the advantages of the hybrid balun in fully differential CMOS RF receivers. The simulated results of the receiver with the hybrid balun show 33 dB of conversion gain, 4.2 dB of noise figure with 20 kHz of 1/f noise corner frequency, and -17.5 dBm of IIP3 at a current consumption of 5 mA from 1.8 V supply.

• 센서학회지
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• 제5권2호
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• pp.21-27
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• 1996

부탄가스 감지를 위해 $WO_{3}$를 기본물질로 하고 산화물을 첨가제로 한 후막형 가스감지 소자를 스크린 프린팅법으로 제조하였고 가스에 대한 감도특성 등을 조사하였다. 첨가 산화물중 $TiO_{2}$를 첨가한 $WO_{3}$ 후막의 부탄가스에 대한 감도가 다른 첨가물을 적용한 후막의 감도보다 상대적으로 높음을 알 수 있었고, $TiO_{2}$의 첨가량이 2wt.%일 때 가장 높은 감도를 나타냄을 알 수 있었다. 열처리 온도를 $900^{\circ}C$까지 변화시켜 보았는데 $650^{\circ}C$일 때 가장 좋은 감도를 나타냈으며, 동작온도를 $400^{\circ}C$까지 변화시켰을 때 $350^{\circ}C$에서 가장 좋은 감도를 가짐을 알 수 있었다. $WO_{3}$에 $TiO_{2}$를 2wt.% 첨가하고, $650^{\circ}C$에서 열처리한 후막의 동작온도 $350^{\circ}C$에서 공기중 20000ppm의 부탄가스에 대해 80%의 감도를 나타내었다.

• Tribology and Lubricants
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• 제33권3호
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• pp.106-111
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• 2017

Sapphire is an anisotropic material with excellent physical and chemical properties and is used as a substrate material in various fields such as LED (light emitting diode), power semiconductor, superconductor, sensor, and optical devices. Sapphire is processed into the final substrate through multi-wire saw, double-side lapping, heat treatment, diamond mechanical polishing, and chemical mechanical polishing. Among these, chemical mechanical polishing is the key process that determines the final surface quality of the substrate. Recent studies have reported that the material removal characteristics during chemical mechanical polishing changes according to the crystal orientations, however, detailed analysis of this phenomenon has not reported. In this work, we carried out chemical mechanical polishing of C(0001), R($1{\bar{1}}02$), and A($11{\bar{2}}0$) substrates with different sapphire crystal planes, and analyzed the effect of crystal orientation on the material removal characteristics and their correlations. We measured the material removal rate and frictional force to determine the material removal phenomenon, and performed nano-indentation to evaluate the material characteristics before and after the reaction. Our findings show that the material removal rate and frictional force depend on the crystal orientation, and the chemical reaction between the sapphire substrate and the slurry accelerates the material removal rate during chemical mechanical polishing.

• 한국정밀공학회지
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• 제21권12호
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• pp.174-181
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• 2004

Ultra precision positioning mechanism has widely been used on semiconductor manufacturing equipments, optical spectrum analyzer and cell manipulations. Ultra precision positioning mechanism is consisted of several actuators, sensors, guides and control systems. Its efficiency depends on each performance of components. The object of this study is to design, analysis and manufacture all of the inchworm linear motor system, which is one of the equipments embodied in ultra precision positioning mechanism. Inchworm linear motor system is consisted of a controller system and an inchworm linear motor, and its driving form is similar to a motion of spanworm. A design and manufacture of inchworm linear motor, which is consisted of three PZT actuators, a rod, two columns and a guide plate, are performed. Minimizing the von-Mises stress of the hinge using Taguchi method and simulation by FEM software optimizes the structural design in a column of flexure hinge. The designed columns and guide plates are manufactured by a W-EDM and NC-milling. A controller system, which is an apparatus to drive inchworm linear motor, can easily adjust driving conditions by varying resonance frequency and input-output voltage of actuators and amplifiers. The performance of manufactured inchworm linear motor system is verified and valuated. In the future, inchworm linear motor system will be used to make a more precision positioning by reinforcing a sensor and feedback system.

• 센서학회지
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• 제28권6호
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• pp.402-406
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• 2019

Recently, semiconducting organic materials have been spotlighted as next-generation electronic materials based on their tunable electrical and optical properties, low-cost process, and flexibility. However, typical organic semiconductor materials are vulnerable to moisture and oxygen. Therefore, an encapsulation layer is essential for application of electronic devices. In this study, SiN_x thin films deposited at process temperatures below 150 ℃ by plasma-enhanced chemical vapor deposition (PECVD) were characterized for application as an encapsulation layer on organic devices. A single structured SiN_x thin film was optimized as an organic light-emitting diode (OLED) encapsulation layer at process temperature of 80 ℃. The optimized SiN_x film exhibited excellent water vapor transmission rate (WVTR) of less than 5 × 10^-5 g/㎡·day and transmittance of over 87.3% on the visible region with thickness of 1 ㎛. Application of the SiN_x thin film on the top-emitting OLED showed that the PECVD process did not degrade the electrical properties of the device, and the OLED with SiN_x exhibited improved operating lifetime