• Journal of the Semiconductor & Display Technology
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• v.11 no.2
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• pp.17-21
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• 2012

This study developed a high-temperature, high-pressure dynamic pressure sensor using LGT(lanthanum gallium tantalate). The sensitivity of the fabricated dynamic pressure sensor was 2.1 mV/kPa and its nonlinearity was 2.5%FS. We confirmed that the high-temperature dynamic pressure sensor operated stably in high-temperature environment at $500^{\circ}C$. The developed dynamic pressure sensor using LGT is expected to be applicable not only to gas turbines but also in various industrial areas in duding airplanes and power stations.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.124-128
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• 2019

In this paper, a high temperature plastic film type water level sensor was developed. The high temperature film type water level sensor was manufactured by attaching a copper film to a polyimide film which can be used for a long time at 250℃, by laminating process and patterning the electrode by etching process. For the performance evaluation of the developed film type water level sensor, the temperature dependence of the capacitance was measured, and the deformation was examined after standing for 8 hours in 150℃ air. The developed film type water level sensor can be used at up to 150℃, and can be applied to electric ports and steam devices.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.739-742
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• 2005

In this paper, an efficient detection algorithm for the flicker, which is caused by mismatching between light frequency and exposure time at CMOS image sensor (CIS), is proposed. The flicker detection can be implemented by specific hardware or complex signal processing logic. However it is difficult to implement on single chip image sensor, which has pixel, CDS, ADC, and ISP on a die, because of limited die area. Thus for the flicker detection, the simple algorithm and high accuracy should be achieved on single chip image sensor,. To satisfy these purposes, the proposed algorithm organizes only simple operation, which calculates the subtraction of horizontal luminance mean between continuous two frames. This algorithm was verified with MATLAB and Xilinx FPGA, and it is implemented with Magnachip 0.18 standard cell library. As a result, the accuracy is 95% in average on FPGA emulation and the consumed gate count is about 7,500 gates (@40MHz) for implementation using Magnachip 0.18 process.

• Journal of the Semiconductor & Display Technology
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• v.12 no.2
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• pp.85-91
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• 2013

In this paper, the parabolic antenna aims to the precise location of a moving ship or car that can be designed system using the gyro sensor. The parabolic antenna has controlled by stepping motor that is a lot of noise and slow response of speed. It has solved the problem which is noise and slow response using the BLDC motor. Also, in order to suppress the noise two-axis control and a separate encoder to the six degrees of freedom motion system was implemented in a precise location. Generally, the gyro sensor is not required to system that doesn't move the six degrees of freedom motion system. But the system will be applied to the moving such as ships or cars. Finally, we presented the position control algorithm at the sometimes controlled both gyro sensor and BLDC motor. This system was tracking that the location of the antenna to the desired angle and errors almost didn't happen when the system was moved 6 degrees of freedom.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.2
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• pp.315-322
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• 2002

A thin film oxide semiconductor micro gas sensor array which shows only 60㎽ of power consumption at an operating temperature of 30$0^{\circ}C$ has been fabricated using microfabrication and rnicrornachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double la! or structure of 0.1${\mu}{\textrm}{m}$ thick Si$_3$N$_4$ and 1${\mu}{\textrm}{m}$ thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric－pressure chemical-vapor deposition(APCVD), respectively. The sensor way consists of such thin film oxide semiconductor sensing materials as 1wt.％ Pd-doped SnO$_2$, 6wt.% AI$_2$O$_3$-doped ZnO, WO$_3$ and ZnO. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials. Heater Part of the sensor structure has been modified in order to improve the process yield of the sensor, and as a result of modified heater structure improved process yield has been achieved.

• Journal of Sensor Science and Technology
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• v.30 no.2
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• pp.114-118
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• 2021

In this study, the sensitivity of an active pixel sensor (APS) was adjusted by employing a gate/body-tied (GBT) p-channel metal-oxide semiconductor field-effect transistor (PMOSFET)-type photodetector with a transfer gate. A GBT PMOSFET-type photodetector can amplify the photocurrent generated by light. Consequently, APSs that incorporate GBT PMOSFET-type photodetectors are more sensitive than those APSs that are based on p-n junctions. In this study, a transfer gate was added to the conventional GBT PMOSFET-type photodetector. Such a photodetector can adjust the sensitivity of the APS by controlling the amount of charge transmitted from the drain to the floating diffusion node according to the voltage of the transfer gate. The results obtained from conducted simulations and measurements corroborate that, the sensitivity of an APS, which incorporates a GBT PMOSFET-type photodetector with a built-in transfer gate, can be adjusted according to the voltage of the transfer gate. Furthermore, the chip was fabricated by employing the standard 0.35 ㎛ complementary metal-oxide semiconductor (CMOS) technology, and the variable sensitivity of the APS was thereby experimentally verified.

• Journal of Sensor Science and Technology
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• v.24 no.1
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• pp.29-34
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• 2015

This study aimed to evaluate the characterization of a metal oxide semiconductor and electrochemical gas sensor array for measuring wastewater odor. The sensitivity of all gas sensors observed in sampling method by stripping was 6.7 to 20.6 times higher than that by no stripping, except sensor D (electrochemical gas sensor). The average reduction ratio of sensor signal as a function of initial dilution rate of wastewater was in the order of food plant > food waste reutilization facility > plating plant. The sensitivity of gas sensors was dependent on both the type of wastewater and the dilution rate. The sensor signals observed by the gas sensor array were correlated with the dilution factor (OU) calculated by the air dilution sensory test with several wastewater ($r^2=0.920{\sim}0.997$), except the sensor signals of sensor D measured in the plating plant wastewater. It seems likely that the gas sensor array plays a role in the evaluation of odor in wastewater and is useful tool for on-site odor monitoring in the wastewater facilities.

• 제어로봇시스템학회:학술대회논문집
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• 1991.10b
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• pp.1956-1960
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• 1991

This paper describes the measured results upon monochromatic light, compound light, and light emanated from light emitting diodes by a simplified wavemeter with a semiconductor color sensor. Since a single unit element of a semiconductor color sensor with two PN junction photodiodes has been developed, the author has fabricated the simplified wave detector by using the element. The simplified wive detector has been measured results upon monochromatic light, compound light, and light emanated from light emitting diodes. Since luminescent color of each diode locates in luminosity region, comparison of measured values of PD-150 and PD-151 resulted no remarkable difference in averaged wave length. As for monochromatic light, PD-151 showed very cross value to the color filter peak value rather than PD-150. As for compound light, PD-150 has shown such influence of long wave length light which reaches to near infrared ray with respect to PD-151.

• Proceedings of the KIEE Conference
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• 2008.10b
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• pp.125-126
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• 2008

A differential capacitance deviation-to-time converter for interfacing position sensor is presented. It consists of triaxial position sensor, six comparators, six current mirrors, and control logic. The prototype differential capacitance deviation-to-time interval converter has been simulated using Chartered $0.35-{\mu}m$ CMOS parameters. The simulation results show that the maximum conversion time of the converter is $350{\mu}s$ and the linearity error is less than ${\pm}0.00l5%$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.246-251
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• 2014

In this paper, a high-speed CMOS Image Sensor (CIS) based on a 10-bit two step Single Slope A/D Converter (SS-ADC) is proposed. The A/D converter is composed of both 5-bit coarse ADC and a 6-bit fine ADC, and the conversion speed is 10 times faster than that of the single-slope A/D convertor. In order to reduce the pixel noise, further, a Hybrid Correlated Double Sampling (H-CDS) is also discussed. The proposed A/D converter has been fabricated with 0.13um 1-poly 4-metal CIS process, and it has a QVGA ($320{\times}240$) resolution. The fabricated chip size is $5mm{\times}3mm$, and the power consumption is about 35 mW at 3.3 V supply voltage. The measured conversion speed is 10 us, and the frame rate is 220 frames/s.