• 한국분말재료학회지
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• 제12권6호
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• pp.387-392
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• 2005

The p-type semiconductor $Bi_2Te_3-Sb_2Te_3$ thermoelectric materials were fabricated by melting, milling and sintering process and their thermoelectric properties were characterized. The compound materials were ball-milled with milling time and the powders were sintered by spark plasma sintering process. The ball milled powders had equiaxial shape and approedmately $1\~3{\mu}m$ in size. The figure of meritz of sintered thermoelectric materials decreased with milling time because of lowered electrical resistivity. The thermoelectric properties of $Bi_2Te_3-Sb_2Te_3$ materials have been discussed in terms of electrical property with ball mill process.

• E2M - 전기 전자와 첨단 소재
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• 제8권4호
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• pp.472-477
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• 1995

The degree of the photodoping process in Ag(100[.angs.])/a-Se$_{75}$Ge$_{25}$(1500[.angs.]) films has measured as a function of the photon energy between 1.5[eV] and 2.9[eV] with the exposing time. The "window" characteristics of Ag occur at 3400[.angs.] (3.65[eV]) and Ag is almost transparent in this region. It is shown that transmittance is almost constant (40-50%) for the wavelength ranges of our experiment. It is found that the energy gap of a unexposed a-Se$_{75}$Ge$_{25}$ film is 1.81[eV]. Ag photodoping process results in the photodarkening effect which the absorption edge shifts to the long wavelength. Especially, very large band shift (-0.3[eV]) is obtained by exposing He-Ne laser(6328[.angs.]).. We have obtained "the U-type property" for Ar He-Ne and semiconductor laser. It is associated with the variation of energy gap(E$_{g}$) with photo-dose and substantially is explained by DWP model.l.gap(E$_{g}$) with photo-dose and substantially is explained by DWP model.

• 한국표면공학회지
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• 제29권6호
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• pp.666-672
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• 1996

The optical property of CdTe thin film is important for applications such as the compound semiconductor type solar cells. CdTe films are prepared by RF sputtering at various substrate temperature between $25^{\circ}C$ and $300^{\circ}C$, then, annealed in argon gas environment at $400^{\circ}C$. The annealing process of the thin film caused variation in the film structure and the composition of films. The deformation of CdTe thin film was observed by X-ray diffractometry. After annealing, the grain size increased and the portion of the non-crystalline CdTe reduced. Futhermore, the structure of sputtered CdTe film grown at the substrate temperature more than $250^{\circ}C$ was enhanced in the (111) direction of zincblend structure. There was a discrepancy, in the spectroscopic ellipsometer spectrum, between the single crystal CdTe and the sputtered CdTe thin films, especially in the region over 3.2eV. An oxidation layer was found on the CdTe thin film by spectroscopic ellipsometry analysis.

• 한국재료학회지
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• 제30권3호
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• pp.117-122
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• 2020

The effects of fast neutron irradiation on the electrical and optical properties of Li (3 at%) doped ZnSnO (ZTO) thin films fabricated using a sol-gel process are investigated. From the results of Li-ZTO TFT characteristics according to change of neutron irradiation time, the saturation mobility is found to increase and threshold voltage values shift to a negative direction from 1,000 s neutron irradiation time. X-ray photoelectron spectroscopy analysis of the O 1s core level shows that the relative area of oxygen vacancies is almost unchanged with different irradiation times. From the results of band alignment, it is confirmed that, due to the increase of electron carrier concentration, the Fermi level (E_F) of the sample irradiated for 1,000 s is located at the position closest to the conduction band minimum. The increase in electron concentration is considered by looking at the shallow band edge state under the conduction band edge formed by fast neutron irradiation of more than 1,000 s.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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• pp.170-173
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• 2007

Cruciform conjugated molecule, 4(DP3T)-benzene bearing terthiophene moieties has been synthesized through Horner-Emmons Reaction using 5-dodecyl-5"-aldehyde-[2,2';5',2"] terthiophene as dendrons and octaethyl benzene- 1,2,4,5-tetrayltetrakis(methylene)tetraphosphonate as the core unit; this molecule has been fully characterized. The terthiophene-based molecule exhibits good solubility in common organic solvents and good self-film forming property. They are intrinsically crystalline as they exhibit well-defined X-ray diffraction patterns from uniform orientations of molecules. Thus, intermolecular interaction can be enhanced to affect the carrier transport phenomena after annealing at $148^{\circ}C$. The semiconducting property of 4(DP3T)-benzene have been evaluated in organic field-effect transistors. 4(DP3T)-benzene exhibit carrier mobility as high as $(6.6{\pm}0.5)$ ${\times}$ $10^{-6}cm^2V^{-1}s^{-1}$.

• 접착 및 계면
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• 제11권2호
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• pp.63-69
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• 2010

본 연구는 2-EHA (2-ethyl hexyl acrylate), 2-EHMA (2-ethyl hexyl methacrylate), 2-HEA (2-Hydroxy ethyl acrylate), acrylic acid 모노머를 이용하여 hydroxy기를 가진 아크릴 수지 점착제를 합성한 후 MOI (Methacryloyloxyethyl isocyanate) 또는 2-isocyanatoethyl methacrylate의 투입량 조절을 통한 경화특성을 향상시킬 수 있는 adduct 반응을 시킨 이소시아네이트 변성 아크릴 수지 점착제를 제조하였다. 시험 결과 초기 점착력과 박리 접착강도는 MOI와 가교제인 isocyanate의 양이 증가할수록 감소하였다. UV 조사후, MOI와 가교제인 isocyanate의 양이 증가할수록 높은 경화특성 때문에 박리접착 강도는 좀 더 낮아지는 결과를 가져왔다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.784-789
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• 2004

Bulk ZnO varistor based on Matsuoka, which varied $SiO_2$ addition has fabricated by standard ceramic process. The micro-electrode, which fabricated for investigation on degradation property of the Single Grain Boundary of ZnO varistor, has sticked by lithography semiconductor process. The values of AC degradation has measured with 150% operating voltage in varistor threshold with 120 minute in 60Hz. In here we observed V-I and V-C property in every 30minute. The operating voltage of Single Grain Boundary has shown in variable patterns in the characteristic of V-I Property. By increasing the $SiO_2$ contents, operating value has also increased and dominated on degradation proper. In EPMA analysis, we know that added $SiO_2$ was nearly distributed at the Grain Boundary. $SiO_2$ has gradually distributed in Grain Boundary condition during the process of crystal growth. It contributes to degradation depression and decision of operating voltage. We also demonstrated for using practical application and performance on distribution random loop based on V-I Properties in Single-Grain-Boundary.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STD structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters. we studied the correlation between CMP thickness of STI using high selectivity slurry. DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased. the N-poly foot is deteriorated. and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point,, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by $100\AA$. 3.2 $u\AA$ of IDSN is getting better in base 1 condition. In POE 50% condition. 1.7 $u\AA$ is improved. and 0.7 $u\AA$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2018년도 춘계학술대회 논문집
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• pp.101-101
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• 2018

Quantitative measurement of chloride ion concentration has an important role in various fields of electrochemistry, medical science, biology, metallurgy, architecture, etc. Among them, its importance of architecture is ever-growing due to unexpected degradations of building structure. These situations are caused by corrosion of reinforced concrete (RC) structure of buildings. And chloride ions are the most powerful factors of RC structure corrosion. Therefore, precise inspection of chloride ion concentration must be required to increase the accuracy of durability monitoring. Multi-walled Carbon nanotubes (MWCNTs) have high chemical resistivity, large surface area and superior electrical property. Thus, it is suitable for the channels of electrical signals made by the sensor. Silver nanoparticles were added to giving the sensing property. CuBTC, one of the metal organic frameworks (MOFs), was employed as a material to improve the sensing property because of its hydrophilicity and high surface area to volume ratio. In this study, sensing element was synthesized by various chemical reaction procedures. At first, MWCNTs were functionalized with a mixture of sulfuric acid and nitric acid because of enhancement of solubility in solution and surface activation. And functionalized MWCNTs, silver nanoparticles, and CuBTC were synthesized on PTFE membrane, one by one. Electroless deposition process was performed to deposit the silver nanoparticles. CuBTC was produced by room temperature synthesis. Surface morphology and composition analysis were characterized by scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS), respectively. X-ray photoelectron spectroscopy (XPS) was also performed to confirm the existence of sensing materials. The electrical properties of sensor were measured by semiconductor analyzer. The chloride ion sensing characteristics were confirmed with the variation of the resistance at 1 V.

• 대한화학회지
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• 제39권9호
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• pp.685-691
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• 1995

결정 분자 궤도함수[EHTB]를 계산할 수 있는 VAX 컴퓨터용 EHMACC와 EHPC 프로그램을, 마이크로-소프트 포트란을 이용하는 PC로 계산할 수 있도록 변환하였다. 이 프로그램을 이용하여 perovskit 구조의 $LaNiO_3$ 단위세포와 ($2{\times}2{\times}1$)으로 확장된 구조에 대한 띠 구조를 계산한 결과, ${\Gamma}{\rightarrow}H,\;H{\rightarrow}N$ 및 $N{\rightarrow}{\Gamma}$ 방향(2차원)에서는 bend gap이 0.35eV인 반도체의 성질을 나타내고, ${\Gamma}{\rightarrow}P$와 $P{\rightarrow}N$ 방향(3차원)에서는 금속성의 성질을 나타내었다. 또 이들 결정에 관한 DOS와 COOP를 고찰한바, $LaNiO_3$에서 산소원자의 DOS는 니켈원자의 결함보다는 산소원자의 위치에 영향을 받아 서로 다른 종류의 산소원자로 존재할수 있음을 알았다.