• 한국재료학회지
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• 제27권6호
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• pp.345-349
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• 2017

The effects of electron beam(EB) irradiation on the electrical and optical properties of InGaZnO(IGZO) thin films fabricated using a sol-gel process were investigated. As the EB dose increased, the electrical characteristic of the IGZO TFTs changed from semiconductor to conductor, and the threshold voltage values shifted to the negative direction. X-ray photoelectron spectroscopy analysis of the O 1s core level showed that the relative area of oxygen vacancies increased from 14.68 to 19.08 % as the EB dose increased from 0 to $1.5{\times}10^{16}electrons/cm^2$. In addition, spectroscopic ellipsometer analysis showed that the optical band gap varied from 3.39 to 3.46 eV with increasing EB dose. From the result of band alignment, it was confirmed that the Fermi level($E_F$) of the sample irradiated with $1.5{\times}10^{16}electrons/cm^2$ was located at the closest position to the conduction band minimum(CBM) due to the increase of electron carrier concentration.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2005년도 춘계종합학술대회
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• pp.1022-1025
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• 2005

ZnO 나노 구조의 형성 시 기판 표면에 의한 영향을 알아보기 위하여, Si(111) 기판과 $Al_2O_3$C (0111)면, A (0112)면, R (2110)면의 기판을 사용하여 나노 구조를 형성시키고 광학적 특성의 변화를 관찰하였다. ZnO 나노 구조는 대기 중에서 수평형 성장로를 이용하였고, 무촉매법으로 Zn 소스만을 사용하여 성장시켰다. 기판의 온도는 500$^{\circ}C$ ${\sim}$ 600$^{\circ}C$로 설정하였고, 성장된 나노 구조는 He-Cd laser (325nm)를 이용하여 10 K에서 300K까지 온도를 변화시키면서 발광 특성의 변화를 분석하였다. 상온에서 측정한 Photoluminescence (PL) 결과로부터, Si과 $Al_2O_3$ 기판에서 각각 384nm, 391 nm의 UV 발광이 관찰되었다. Si 기판에서는 산소 결핍형 결함에 의한 것으로 판단되는 녹색 발광이 관찰되었지만 $Al_2O_3$ 기판에서는 녹색 발광이 관찰되지 않았다. 그리고 온도 변화에 따른 PL 측정 결과 Si과 $Al_2O_3$ 기판에서의 UV 발광 피크의 기원이 다름을 확인할 수 있었다. 이러한 발광 특성의 차이는 기판의 표면 에너지 차이가 나노 구조의 성장 매커니즘에 영향을 주어 발생한 것으로 생각된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.88-89
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• 2009

In this paper, we investigated about wet cleaning effect as deep trench formation methods for Power chip devices. Deep trench structure was classified by two methods, PSU (Poly Stick Up) and Non-PSU structure. In this paper, we could remove residue defect during wet. cleaning after deep trench etch process for non-PSU structure device as to change wet cleaning process condition. V-SEM result showed void image at the trench bottom site due to residue defect and residue component was oxide by EDS analysis. In order to find the reason of happening residue defect, we experimented about various process conditions. So, defect source was that oxide film was re-deposited at trench bottom by changed to hydrophobic property at substrate during hard mask removal process. Therefore, in order to removal residue defect, we added in-situ SCI during hard mask removal process, and defect was removed perfectly. And WLR (Wafer Level Reliability) test result was no difference between normal and optimized process condition.

• 한국재료학회지
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• 제15권5호
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• pp.301-305
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• 2005

We fabricated nickel silicide layers on whole non-patterned wafers from $p-Si(100)SiO_2(200nm)$/poly-Si(70 nm)mn(40 nm) structure by 40 sec rapid thermal annealing of $500\~900^{\circ}C$. The sheet resistance, cross-sectional microstructure, surface roughness, and phase analysis were investigated by a four point probe, a field emission scanning electron microscope, a scanning probe microscope, and an X-ray diffractometer, respectively. Sheet resistance was as small as $7\Omega/sq$. even at the elevated temperature of $900^{\circ}C$. The silicide thickness and surface roughness increased as silicidation temperature increased. We confirmed the nickel silicides iron thin nickel/poly-silicon structures would be a mixture of NiSi and $NiSi_2$ even at the $NiSi_2$ stable temperature region.

• 반도체디스플레이기술학회지
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• 제7권3호
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• pp.17-21
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• 2008

Application of flash memory in mobile and ubiquitous related devices is rapidly being increased due to its low price and high performance. In addition, some notebook computers currently come out into market with a SSD(Solid State Disk) instead of hard-drive based storage system. Regarding this trend, applications need to increase the storage capacity using multiple flash memory chips for larger capacity sooner or later. Flash memory based storage subsystem should resolve the performance bottleneck for writing in perspective of speed and lifetime according to its physical property. In order to make flash memory storage work with tangible performance, reclaiming of invalid regions needs to be controlled in a particular manner to decrease the number of erasures and to distribute the erasures uniformly over the whole memory space as much as possible. In this paper, we study the performance of flash memory recycling algorithms and demonstrate that the proposed algorithm shows acceptable performance for flash memory storage with multiple chips. The proposed cleaning method partitions the memory space into candidate memory regions, to be reclaimed as free, by utilizing threshold values. The proposed algorithm handles the storage system in multi-layered style. The impact of the proposed policies is evaluated through a number of experiments.

• Applied Science and Convergence Technology
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• 제25권4호
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• pp.73-76
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• 2016

Multi-layer films of $SiN_x/SiO_x$/InSnO with anti-reflective effect were grown by new-concept plasma enhanced chemical vapor deposition system (PECVD) with hybrid plasma source (HPS). Anti-reflective effect of $SiN_x/SiO_x$/InSnO was investigated as a function of ratio of $SiN_x$ and $SiO_x$ thickness. Multi-layers deposited by PECVD with HPS represents the enhancement of anti-reflective effect with high transmittance, comparing to the layers by conventional radio frequency (RF) sputtering system. This change is strongly related to the optical and physical properties of each layer, such as refractive index, composition, film density, and surface roughness depending on the deposition system.

• 한국결정성장학회지
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• 제17권5호
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• pp.192-195
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• 2007

Structural and electronic properties of bulk GaN with nitrogen vacancy($V_N$), oxygen substitution on nitrogen site($O_N$), and complex of nitrogen vacancy and oxygen substitution on nitrogen site($V_N-O_N$) were investigated using the first principle calculations. It was found that stability of defect formation is dependent on the epilayer growth conditions. The complex of $V_N-O_N$ is energetically the most favorable state in a condition of Ga-rich, however, oxygen substitution in nitrogen site is the most favorable state in N-rich condition. The electronic property of complex with negative charge states at $\Gamma$ point was changed from semiconductor to metal. On the contrary, the properties of nitrogen vacancy except for neutral charge state have shown the semiconductor characteristics at $\Gamma$ point. In the oxygen substitution on nitrogen site, the energy differences between conduction band minimum and Fermi level were smaller than that of defect-free GaN.

• 한국재료학회지
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• 제17권11호
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• pp.612-617
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• 2007

Both photoluminescence and thermal characteristics for $SrAl_2O_4:Eu^{+2},\;Dy^{+3}$ phosphors synthesized with various aluminum compounds (${\alpha}-Al_2O_3$, ${\gamma}-Al_2O_3$, amorphous-$Al_2O_3$ and $Al(OH)_3)$ were investigated in this study. The formation temperature of the host $SrAl_2O_4$ crystal is changed by these various aluminum compounds, as a result of the different thermal decomposition temperature of $SrCO_3$ phase. Among these compounds, the amorphous-$Al_2O_3$ phase shows the lowest formation temperature of the host $SrAl_2O_4$ crystal. The PL emission and excitation spectra of $SrAl_2O_4:Eu^{+2},\;Dy^{+3}$ phosphor are not affected by these aluminum compounds. After the removal of the Xenon lamp excitation (360 nm), however, the excellent longphosphorescent property of the phosphor is obtained by the amorphous-$Al_2O_3$ phase, although the decay time for all phosphors decrease exponentially.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.155-159
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• 2003

Polycrystalline $Ti_{1-x}Co_xO_2$ thin films on $SiO_2$ (200 nm)/Si (100) substrates were prepared using liquid-delivery metalorganic chemical vapor deposition. Microstructures and ferromagnetic properties were investigated as a function of doped Co concentration. Ferromagnetic behaviors of polycrystalline films were observed at room temperature, and the magnetic and structural properties strongly depended on the Co distribution, which varied widely with doped Co concentration. The annealed $Ti_{1-x}Co_xO_2$ thin films with $x{\leq}0.05$ showed a homogeneous structure without any clusters, and pure ferromagnetic properties of thin films are only attributed to the $Ti_{1-x}Co_xO_2$ (TCO) phases. On the other hand, in case of thin films above x=0.05, Co clusters formed in a homogeneous $Ti_{1-x}Co_xO_2$ Phase, and the overall ferromagnetic (FM) properties depended on both $FM_{TCO}$ and $FM_{Co}$. Co clusters with about 10nm-150nm size decreased the value of Mr (the remanent magnetization) and increased the saturation magnetic field.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 춘계학술대회 논문집
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• pp.100-100
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• 2009

$TiO_2$ is widely being used as a semiconductor electrode for DSSC. Anti-recombination property and surface area of $TiO_2$ give an important influence to the DSSC efficiency. In this study, $TiO_2$ electrode was fabricated on FTO using screen printing method. Various overlayers were coated on them by dip coating in solution of saturated $Ba(NO_3)_2$, $Mg(NO_3)_2$ and $N_{2}O_{6}Sr$. They reduced the recombination of electrons from photo excited state of Ru dye. The atmospheric plasma treatment was applied to both the $TiO_2$ and each overlayer coated $TiO_2$ surfaces to improve contact ability with dye. We prepared four samples, one sample has bare $TiO_2$ surfaces to improve contact ability with dye. We prepared four samples, one sample has bare $TiO_2$ electrode and the other samples consist of each overlayer coated $TiO_2$ electrodes. We used XRD, FE-SEM, J-V, IPCE and EIS in order to investigate characteristic.