• Journal of the Korean Society for Heat Treatment
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• v.35 no.2
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• pp.51-56
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• 2022

In this study, we controlled the shape of a carbon layer on gallium oxide templates. Gallium oxide layers were deposited on sapphire substrates using mist chemical vapor deposition. Subsequently, carbon layers were formed using radio frequency plasma chemical vapor deposition. Various shapes of carbon structures appeared according to the fraction of methane gas, used as a precursor. As methane gas concentration was adjusted from 1 to 100%, The shapes of carbon structures varied to diamonds, nanowalls, and spheres. The growth of carbon isotope structures on Ga₂O₃ templates will give rise to improving the electrical and thermal properties in the next-generation electronic applications.

• Journal of Sensor Science and Technology
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• v.29 no.6
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• pp.420-426
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• 2020

A metal oxide semiconductor gas sensor is operated by measuring the changes in resistance that occur on the surface of nanostructures for gas detection. ZnO, which is an n-type metal oxide semiconductor, is widely used as a gas sensor material owing to its high sensitivity. Various ZnO nanostructures in gas sensors have been studied with the aim of improving surface reactions. In the present study, the sol-gel and vapor phase growth techniques were used to fabricate nanostructures to improve the sensitivity, response, and recovery rate for gas sensing. The sol-gel method was used to synthesize SnO₂ nanoparticles, which were used as the seed layer. The nanoparticles size was controlled by regulating the process parameters of the solution, such as the pH of the solution, the type and amount of solvent. As a result, the SnO₂ seed layer suppressed the aggregation of the nanostructures, thereby interrupting gas diffusion. The ZnO nanostructures with a sol-gel processed SnO₂ seed layer had larger specific surface area and high sensitivity. The gas response and recovery rate were 1-7 min faster than the gas sensor without the sol-gel process. The gas response increased 4-24 times compared to that of the gas sensor without the sol-gel method.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.183-187
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• 2007

The magnetron reactive ion etching (RIE) characteristics of polycrystalline (poly) 3C-SiC grown on $SiO_2$/Si substrate by APCVD were investigated. Poly 3C-SiC was etched by $CHF_3$ gas, which can form a polymer as a function of side wall protective layers, with additive $O_2$ and Ar gases. Especially, it was performed in magnetron RIE, which can etch SiC at lower ion energy than a commercial RIE system. Stable etching was achieved at 70 W and the poly 3C-SiC was undamaged. The etch rate could be controlled from $20\;{\AA}/min$ to $400\;{\AA}/min$ by the manipulation of gas flow rates, chamber pressure, RF power, and electrode gap. The best vertical structure was improved by the addition of 40 % $O_2$ and 16 % Ar with the $CHF_3$ reactive gas. Therefore, poly 3C-SiC etched by magnetron RIE can expect to be applied to M/NEMS applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.3-6
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• 2002

Plasma processing plays a significant role in semiconductor devices technology. Development of new plasma systems, such as high-density plasma reactors, required development of plasma theory to understand a whole process mechanism and to be able to explain and to predict processing results. A most important task in this way is to establish interconnections between input process parameters (working gas, pressure, flow rate, input power density) and various plasma subsystems (electron gas, volume and heterogeneous gas chemistry, transport), which are closely connected one with other. It will allow select optimal ways for processes optimization.

• Journal of the Semiconductor & Display Technology
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• v.5 no.1 s.14
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• pp.27-31
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• 2006

Non-contact transportation system using air cushion for the manufacturing of large-sized LCD panels was considered. Flow characteristics between air pad and glass plate was analyzed using computational fluid dynamics method to obtain optimized air pad configurations. Effects of the design variables such as hole arrays from which gas is injected, gas-feeding method into the gas supplying channels, and horizontal and vertical pitches of clusters of holes were studied. Optimized air pad unit gave evenly distributed pressure contour on the glass surface and well-suspended levitation height in the experiment.

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.59-63
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• 2009

This paper presents two dimensional simulation results of an inductively coupled $Ar/O_2$ plasma reactor. The effects of operating conditions on the plasma properties and the uniformity of atomic oxygen near the wafer were systematically investigated. The plasma density had the linear dependence on the chamber pressure, the flow rate of the feed gas and the power deposited into the plasma. On the other hand, the electron temperature decreased almost linearly with the chamber pressure and the flow rate of the feed gas. The power deposited into the plasma nearly unaffected the electron temperature. The simulation results showed that the uniformity of atomic oxygen near the wafer could be improved by lowering the chamber pressure and/or the flow rate of the feed gas. However, the power deposited into the plasma had an adverse effect on the uniformity.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.296-299
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• 2000

The electrical properties of various metal phthalocyanine(MPc) thin film sensors were tested in the presence of $NO_x$ gas. Among the Phthalocyanine(Pc) thin films, lead phthalocyanine(PbPc) thin film showed the best results nd its sensitivity was over 80% at 5ppm of $NO_x$ gas. Optimal operating conditions including response time and cyclic treatment of $NO_x$ were tested and discussed.

• Journal of the Semiconductor & Display Technology
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• v.4 no.4 s.13
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• pp.5-8
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• 2005

In this study, we prepared the ITO thin film for TOLED(Top-emitting OLED) or flexible display at room temperature using the FTS(Facing Targets Sputtering Apparatus). We observed characteristics of deposited thin films as a function of sputtering conditions. XRD patterns were independence trom oxygen gas flow and input current. But electrical and optical properties were strongly dependence. In the results, we could prepare good properties of ITO thin films resistivity of $4.27X10^{-4}[\Omega-cm]$, transmittance of over 80% at working gas pressure 1[mTorr], input current 0.6[A], oxygen gas ratio 0.3[sccm], at room temperature.

• Journal of the Semiconductor & Display Technology
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• v.17 no.4
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• pp.91-96
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• 2018

In this study temperature distribution and gas flow inside a planetary type reactor in which a number of satellites on a spinning susceptor were rotating were analyzed using numerical simulation. Effects of flow rates on gas flow and temperature distribution were investigated in order to obtain design parameters. The commercial computational fluid dynamics software CFD-ACE+ was used in this study. The multiple-frame-of-reference was used to solve continuity, momentum and energy conservation equations which governed the transport phenomena inside the reactor. Kinetic theory was used to describe the physical properties of gas mixture. Effects of the rotation speed of the satellites was clearly seen when the inlet flow rate was small. Thickness of the boundary layer affected by the satellites rotation became very thin as the flow rate increased. The temperature field was little affected by the incoming flow rate of precursors.

• Journal of the Semiconductor & Display Technology
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• v.20 no.3
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• pp.27-31
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• 2021

VI probe, which is one of various in-situ plasma monitoring sensor, is frequently used for in-situ process monitoring in mass production environment. In this paper, we correlated the plasma etch results with VI probe data with the small amount of gas flow rate changes to propose usefulness of the VI probe in real-time process monitoring. Several different sized contact holes were employed for the etch experiment, and the etched profiles were measured by scanning electron microscope (SEM). Although the shape of etched hole did not show satisfactory relationship with VI probe data, the chamber status changed along the incremental/decremental modification of the amount of gas flow was successfully observed in terms of impedance monitoring.