• Journal of the Korean Institute of Gas
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• v.27 no.4
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• pp.43-49
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• 2023

Hydrofluoric acid is a less acidic substance than hydrochloric acid, nitric acid, and sulfuric acid, but it is one of the most dangerous substances for humans. In recent years, it has become an indispensable substance in industries such as chemical plants and the semiconductor industry, and although it is a threat to the human body, its use is increasing for various purposes, and the amount of use is constantly increasing due to the expansion and development of the industry. The dangers of hydrogen fluoride have been highlighted since the 2012 accident, which led to a more than fivefold increase in management standards for handling facilities. Hydrogen fluoride converts to hydrofluoric acid when exposed to the air, which can be fatal to humans. This study simulates the effects of a release of a toxic substance in the workplace, even though a protection layer has been provided to minimize the damage caused by the released toxic substance, and recommend ways to control the risk to workers in the event of a release in the workplace.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.3
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• pp.135-145
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• 2011

Accurate process characterization and optimization are the first step for a successful advanced process control (APC), and they should be followed by continuous monitoring and control in order to run manufacturing processes most efficiently. In this paper, process characterization and recipe optimization methods with multiple outputs are presented in high density plasma-chemical vapor deposition (HDP-CVD) silicon dioxide deposition process. Five controllable process variables of Top $SiH_4$, Bottom $SiH_4$, $O_2$, Top RF Power, and Bottom RF Power, and two responses of interest, such as deposition rate and uniformity, are simultaneously considered employing both statistical response surface methodology (RSM) and neural networks (NNs) based genetic algorithm (GA). Statistically, two phases of experimental design was performed, and the established statistical models were optimized using performance index (PI). Artificial intelligently, NN process model with two outputs were established, and recipe synthesis was performed employing GA. Statistical RSM offers minimum numbers of experiment to build regression models and response surface models, but the analysis of the data need to satisfy underlying assumption and statistical data analysis capability. NN based-GA does not require any underlying assumption for data modeling; however, the selection of the input data for the model establishment is important for accurate model construction. Both statistical and artificial intelligent methods suggest competitive characterization and optimization results in HDP-CVD $SiO_2$ deposition process, and the NN based-GA method showed 26% uniformity improvement with 36% less $SiH_4$ gas usage yielding 20.8 ${\AA}/sec$ deposition rate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.12
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• pp.909-914
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• 2013

CIGS is one of thin film solar cell and has been studied so much, because of the possibility of low price and high efficiency. Until now, co-evaporation and sputtering were typical method to prepare CIGS absorption layer, and a few company commercialized solar cell by these method. However, non-vacuum process which has been studied for long time has not been progressed, though the merit of low price. Especially, aerosol deposition method has not been reported, because it is difficult to prepare a large quantity of various CIGS powder. In this study, CIGS powder was synthesized by mechanochemical method and CIGS absorption layer was deposited by aerosol deposition method. The thickness of the CIGS layer was controlled by the number of deposition and the surface roughness of it was affected by the amount of flow gas. And, also, I-V curve of it appeared metallic property in the case of 'as deposition'. After heat treatment in Se-rich atmosphere, the electrical property of it changed to a semiconductor. CdS and transparent conduction layer were formed by a typical method on it for solar cell. The efficiency of cell was appeared 0.19%. Though the efficiency was low because of the disharmony in the after-process, it was conformed that CIGS solar cell could be prepared by aerosol deposition.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.36T no.1
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• pp.19-24
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• 1999

$In_2O_3$-based thick films for the ozone detection of ppb range have been investigated. The $In_2O_3$ sensing layer is quite sensitive to ozone, but the saturated stable sensitivity cannot be obtained at the ozone exposure of 100 ppb for 5 min. The addition of $Fe_2O_3$ into $In_2O_3$ indicates some improvement in response time and sensitivity, but it seems the improvement is not good enough for real applications. Firing of $In_2O_3$:$Fe_2O_3$ powder induces remarkable improvement in response and recovery, although the sensitivity decrease. The sensing layer fired at $1300^{\circ}C$ and operated $550^{\circ}C$ shows excellent properties of fast response time, saturated stable sensitivity and rapid recovery characteristics to 100 ppb ozone exposure for 5 min. Especially, it shows the reproducibility of the sensor signal for repeated measurements and the linearity between the ozone concentration and the sensor resistance. The preliminary results clearly demonstrated that the sensor can be successfully applied for the ozone detection of ppb range.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.310-310
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• 2016

최근 NAND flash memory는 높은 집적성과 데이터의 비휘발성, 낮은 소비전력, 간단한 입, 출력 등의 장점들로 인해 핸드폰, MP3, USB 등의 휴대용 저장 장치 및 노트북 시장에서 많이 이용되어 왔다. 특히, 최근에는 smart watch, wearable device등과 같은 차세대 디스플레이 소자에 대한 관심이 증가함에 따라 유연하고 투명한 메모리 소자에 대한 연구가 다양하게 진행되고 있다. 대표적인 플래시 메모리 소자의 구조로 charge trapping type flash memory (CTF)가 있다. CTF 메모리 소자는 trap layer의 trap site를 이용하여 메모리 동작을 하는 소자이다. 하지만 작은 window의 크기, trap site의 열화로 인해 메모리 특성이 나빠지는 문제점 등이 있다. 따라서 최근, trap layer에 다양한 물질을 적용하여 CTF 소자의 문제점을 해결하고자 하는 연구들이 진행되고 있다. 특히, 산화물 반도체인 zinc oxide (ZnO)를 trap layer로 하는 CTF 메모리 소자가 최근 몇몇 보고 되었다. 산화물 반도체인 ZnO는 n-type 반도체이며, shallow와 deep trap site를 동시에 가지고 있는 독특한 물질이다. 이 특성으로 인해 메모리 소자의 programming 시에는 deep trap site에 charging이 일어나고, erasing 시에는 shallow trap site에 캐리어들이 쉽게 공급되면서 deep trap site에 갇혀있던 charge가 쉽게 de-trapped 된다는 장점을 가지고 있다. 따라서, 본 실험에서는 산화물 반도체인 ZnO를 trap layer로 하는 CTF 소자의 메모리 특성을 확인하기 위해 간단한 구조인 metal-oxide capacitor (MOSCAP)구조로 제작하여 메모리 특성을 평가하였다. 먼저, RCA cleaning 처리된 n-Si bulk 기판 위에 tunnel layer인 SiO2 5 nm를 rf sputter로 증착한 후 furnace 장비를 이용하여 forming gas annealing을 $450^{\circ}C$에서 실시하였다. 그 후 ZnO를 20 nm, SiO2를 30 nm rf sputter로 증착한 후, 상부전극을 E-beam evaporator 장비를 사용하여 Al 150 nm를 증착하였다. 제작된 소자의 신뢰성 및 내구성 평가를 위해 상온에서 retention과 endurance 측정을 진행하였다. 상온에서의 endurance 측정결과 1000 cycles에서 약 19.08%의 charge loss를 보였으며, Retention 측정결과, 10년 후 약 33.57%의 charge loss를 보여 좋은 메모리 특성을 가지는 것을 확인하였다. 본 실험 결과를 바탕으로, 차세대 메모리 시장에서 trap layer 물질로 산화물 반도체를 사용하는 CTF의 연구 및 계발, 활용가치가 높을 것으로 기대된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.197.2-197.2
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• 2015

Low-cost, high efficiency solar cells are tremendous interests for the realization of a renewable and clean energy source. ZnTe based solar cells have a possibility of high efficiency with formation of an intermediated energy band structure by impurity doping. In this work, the ZnTe:O/CdS/ZnO structure was fabricated by pulsed laser deposition (PLD) technique. A pulsed (10 Hz) Nd:YAG laser operating at a wavelength of 266 nm was used to produce a plasma plume from an ablated a ZnTe target, whose density of laser energy was 4.5 J/cm2. The base pressure of the chamber was kept at a pressure of approximately $4{\times}10-7Torr$. ZnO thin film with thickness of 100 nm was grown on to ITO/glass, and then CdS and ZnTe:O thin film were grown on ZnO thin film. Thickness of CdS and ZnTe:O were 50 nm and 500 nm, respectively. During deposition of ZnTe:O films, O2 gas was introduced from 1 to 20 mTorr. For fabricating ZnTe:O/CdS/ZnO solar cells, Au metal was deposited on the ITO film and ZnTe:O by thermal evaporation method. From the fabricated ZnTe:O/CdS/ZnO solar cell, current-voltage characteristics was measured by using HP 4156-a semiconductor parameter analyzer. Finally, solar cell performance was measured using an Air Mass 1.5 Global (AM 1.5 G) solar simulator with an irradiation intensity of 100 mW cm-2.

• Journal of Korean Society for Atmospheric Environment
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• v.20 no.5
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• pp.625-632
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• 2004

Perfluorocompounds ($PFC_s$), such as tetrafluoromethane ($CF_4$) and hexafluoroethane ($C_2F_6$), have been widely used as plasma etching and chemical vapor deposition (CVD) gases for semiconductor manufacturing processes. Since these $PFC_s$ are known to cause a greenhouse effect intensively, there has been a growing interest in reducing $PFC_s$ emissions. Among various $CF_4$ decomposing techniques, a dielectric barrier discharge (DBD) is considered as one of a promising candidate because it has been successfully used for generating ozone ($O_3$) and decomposing nitrogen oxide (NO). Firstly, optimal concentration of oxygen for $CF_4$ decomposition was found to figure out how many primary and secondary reactions are associated with DBD process. Secondary, to find effective discharge method for $CF_4$ decomposition, a streamer and a glow mode in DBD are experimentally compared, which includes (i) coaxialcylinder DBD, (ii) DBD reactor packed with glass beads. and (iii) a glow mode operation with a helium gas. The test results showed that optimal concentration of oxygen was ranged 500 ppm~1% for treating 500 ppm of $CF_4$ and helium glow discharge was the most efficient one to decompose $CF_4$.

• Journal of Sensor Science and Technology
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• v.14 no.1
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• pp.22-27
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• 2005

A thermoelectric flow sensor for small quantity of gas flow rate was fabricated using silicon wafer semiconductor process and bulk micromachining technology. Evanohm R alloy heater and chromel-constantan thermocouples were used as a generation heat unit and sensing parts, respectively. The heater and thermocouples are thermally isolated on the $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$ laminated membrane. The characteristics of this sensor were observed in the flow rate range from 0.2 slm to 1.0 slm and the heater power from 0.72 mW to 5.63 mW. The results showed that the sensitivities $(({\partial}({\Delta}V)/{\partial}(\dot{q}));{\;}{\Delta}V$ : voltage difference, $\dot{q}$ : flow rate) were increased in accordance with heater power rise and decreasing of flow rate.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.284-291
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• 1996

We have implemented a fast pressure control system for the transport chamber of a high vacuum cluster tool for advance semiconductor fabrication and evaluated its performance. To overcome the typically slow response of mass flow controllers, the modified experimental method is used very effectively to optimize the pressure control procedure. We successfully obtained quite fast pressure control by adjusting the starting time and eht tuning constants by the Ziegler-Nichols method. In the transport pressure $10\times 10^{-5}$ torr, actual pressure control starts from 4 sec after an initial gas load of 2.1 sccm. As a result, optimum conditions for the tuning constants are the rise rate of 0.02 torr/sec, the lag time of 0.15 sec, and the sampling period of 0.5 sec. Then the settling time is about 9 sec within about $\pm$0.5% for the referenced value. This settling time is enhanced above 75 percents in comparison with conventional experimental method. To account for the experimental effects observed, a theoretical model was developed. This experimental result has a tendency to fit with the theoretical result of $\omega$=-1.0.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.30.1-30.1
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• 2011

Silicon is one of useful materials in various industry such as semiconductor, solar cell, and secondary battery. The metallic silicon produces generally melting process for ingot type or chemical vapor deposition (CVD) for thin film type. However, these methods have disadvantages of high cost, complicated process, and consumption of much energy. Electrodeposition has been known as a powerful synthesis method for obtaining metallic species by relatively simple operation with current and voltage control. Unfortunately, the electrodeposition of the silicon is impossible in aqueous electrolyte solution due to its low oxidation-reduction equilibrium potential. Ionic liquids are simply defined as ionic melts with a melting point below $100^{\circ}C$. Characteristics of the ionic liquids are high ionic conductivities, low vapour pressures, chemical stability, and wide electrochemical windows. The ionic liquids enable the electrochemically active elements, such as silicon, titanium, and aluminum, to be reduced to their metallic states without vigorous hydrogen gas evolution. In this study, the electrodeposion of silicon has been investigated in ionic liquid of 1-butyl-3-methylpyrolidinium bis (trifluoromethylsulfonyl) imide ([bmpy]$Tf_2N$) saturated with $SiCl_4$ at room temperature. Also, the effect of electrode materials on the electrodeposition and morphological characteristics of the silicon electrodeposited were analyzed The silicon electrodeposited on gold substrate was composed of the metallic Si with single crystalline size between 100~200nm. The silicon content by XPS analysis was detected in 31.3 wt% and the others were oxygen, gold, and carbon. The oxygen was detected much in edge area of th electrode due to $SiO_2$ from a partial oxidation of the metallic Si.