• 한국재료학회지
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• 제28권1호
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• pp.32-37
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• 2018

We report on the efficient detection of NO gas by an all-oxide semiconductor p-n heterojunction diode structure comprised of n-type zinc oxide (ZnO) nanorods embedded in p-type copper oxide (CuO) thin film. The CuO thin film/ZnO nanorod heterostructure was fabricated by directly sputtering CuO thin film onto a vertically aligned ZnO nanorod array synthesized via a hydrothemal method. The transport behavior and NO gas sensing properties of the fabricated CuO thin film/ZnO nanorod heterostructure were charcterized and revealed that the oxide semiconductor heterojunction exhibited a definite rectifying diode-like behavior at various temperatures ranging from room temperature to $250^{\circ}C$. The NO gas sensing experiment indicated that the CuO thin film/ZnO nanorod heterostructure had a good sensing performance for the efficient detection of NO gas in the range of 2-14 ppm under the conditions of an applied bias of 2 V and a comparatively low operating temperature of $150^{\circ}C$. The NO gas sensing process in the CuO/ZnO p-n heterostructure is discussed in terms of the electronic band structure.

• 분석과학
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• 제16권3호
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• pp.218-225
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• 2003

반도체 공정에서는 많은 종류의 가스를 사용하는데 그들 중 염산 가스는 독성으로 인해 많은 환경오염 문제들을 야기 시키고 있다. 본 논문에서는 염산 가스를 기존의 제거 방식이 아닌 제올라이트수지 등의 흡착제들을 이용한 제거 방법 및 측정을 하는 연구를 수행하였다. 실험 장치는 실험조건을 고려하여 직접 설계 및 제작을 하였다. 그리고 각종 수지를 이용한 흡착제거정도를 비교하기 위하여 제올라이트 A, $Ag^+$ 이온으로 치환된 AgA 제올라이트, ZnO, $AgMnO_3$ 등의 수지를 이용하여 실험하였다. 가스의 분석은 적외선 분광기 (FT-IR)를 이용하여 정성 및 정량분석을 하여 각 각의 수지에 의한 염산 가스의 제거량을 계산함으로써 각 수지의 제거 효율을 확인, 비교하였다. 본 실험에서 사용된 수지들 중에서 ZnO 가 수지 1 g에 대해 0.067 g 의 HCl 가스를 제거하는 가장 좋은 결과를 나타내었다.

• 분석과학
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• 제5권4호
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• pp.455-464
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• 1992

본 논문에서는 FT-IR 분광분석법을 이용하여 여러 가지 반응조건에서 기체상 silylation 반응에 의해 생성된 silylated layer의 depth를 비파괴적으로 정량하는 방법을 제안하였다. Silylated layer의 depth는 FT-IR 스펙트럼의 특성 봉우리들(Si-O-ph, Si-C, Si-H)의 흡광도를 바탕 스펙트럼 공제법으로 측정하여 SEM의 두께 측정치와 비교하여 정량하였다. FT-IR 분광분석법을 이용한 Silylated layer의 depth 분석은 비파괴적이고 정량적인 방법으로, 이 방법은 silylation process window를 설정하는 데 적합하다는 것을 알았다.

• 반도체디스플레이기술학회지
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• 제7권3호
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• pp.29-34
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• 2008

This paper describes the fabrication and characterization of a differential pressure type integrated mass-flow controller made of stainless steel for reactive and corrosive gases. The fabricated mass-flow controller is composed of a normally closed valve and differential pressure sensor. A stacked solenoid actuator mounted on a base-block is utilized for precise and rapid control of gas flow. The differential pressure flow sensor consisting of four diaphragms can detect a flow rate by deflection of diaphragm. By a feedback control from the flow sensor to the valve actuator, it is possible to keep the flow rate constant. This device shows a fast response less than 0.3 sec. Also, this device shows accuracy less than 0.1% of full scale. It is confirmed that this device is not attacked by toxic gas, so the integrated mass-flow controller can be applied to advanced semiconductor processes which need fine mass-flow control corrosive gases with fast response.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 추계학술대회 논문집 학회본부
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• pp.245-248
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• 1991

Recently, oxide semiconductor gas sensors consisted of n-type semiconductor materials such as $SnO_2$, ZnO and $Fe_2O_3$ have been widely used to detect reducing gases. In this paper, we made the thick-film ZnO gas sensors with $PdCl_2$ as a catalyst and investigated the sensitivity to CO gas. In the thick-film Zno sensor, the highest sensitivity was shown in the sensor with 1wt.% of $PdCl_2$ which was sintered for 1 hour at $700^{\circ}C$ and operated at $300^{\circ}C$.

• 반도체디스플레이기술학회지
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• 제9권4호
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• pp.67-70
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• 2010

X-ray absorption rate and multiplication factor of X-ray detector were calculated with Garfield code. High Z (= atomic number) was important factor to increase the absorption rate but low Z is also important to increase the multiplication. Five different gas composition were examined under the condition of 1400 V bias and 400 um gap. Xe 100% gas showed the highest absorption rate and He 96% + isobutene 4% showed the highest multiplication.

• 한국안전학회지
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• 제22권4호
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• pp.32-36
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• 2007

When the vacuum system for the process of $SiH_{4}$ gas used in the semiconductor and FPD field is partially vented from vacuum to atmospheric state, a fire often occurs due to auto-ignition of $SiH_{4}$ gas. In order to prevent the fire, the concentration of $SiH_{4}$ should be kept under LFL. This means that the higher capacity pump is needed to meet the process conditions as well as the condition that the concentration of $SiH_{4}$ should be kept under LFL. In this article, we conducted the injection of the dilution gas at the manifold between booster pump and dry pump compared with the typical method that the dilution gas was injected into inlet port of booster pump using computer simulation. According to the result, we can flow further more purge gas for safety without any change of the condition in the process chamber, which means that the higher capacity pump is not required for safety in some cases.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1994년도 추계 학술발표 강연 및 논문 개요집
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• pp.89-89
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• 1994

• 한국재료학회:학술대회논문집
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• 한국재료학회 1993년도 춘계학술발표회
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• pp.39-40
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• 1993

• 한국전기화학회:학술대회논문집
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• 한국전기화학회 1998년도 제1회 총회 및 추계학술발표회
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• pp.27-27
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• 1998