• Journal of the Korean Physical Society
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• v.73 no.10
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• pp.1444-1451
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• 2018

The surface-to-volume ratio of one-dimensional (1D) semiconductor metal-oxide sensors is an important factor for achieving good gas sensing properties because it offers a wide response area. To exploit this effect, in this study, we determined the optimal calcination temperature to maximize the specific surface area and thereby the sensitivity of the sensor. The $In_2O_3$ nanorods were synthesized by using vapor-liquid-solid growth of $In_2O_3$ powders and were decorated with the Pt nanoparticles by using a sol-gel method. Subsequently, the Pt nanoparticle-decorated $In_2O_3$ nanorods were calcined at different temperatures to determine the optimal calcination temperature. The $NO_2$ gas sensing properties of five different samples (pristine uncalcined $In_2O_3$ nanorods, Pt-decorated uncalcined $In_2O_3$ nanorods, and Pt-decorated $In_2O_3$ nanorods calcined at 400, 600, and $800^{\circ}C$) were determined and compared. The Pt-decorated $In_2O_3$ nanorods calcined at $600^{\circ}C$ showed the highest surface-to-volume ratio and the strongest response to $NO_2$ gas. Moreover, these nanorods showed the shortest response/recovery times toward $NO_2$. These enhanced sensing properties are attributed to a combination of increased surface-to-volume ratio (achieved through the optimal calcination) and increased electrical/chemical sensitization (provided by the noble-metal decoration).

• Journal of the Korea Academia-Industrial cooperation Society
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• v.21 no.4
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• pp.588-595
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• 2020

This study examined the catalytic property of Ni-catalyst used in the gas purifying process to manufacture inert gases of N2 and Ar with high-purity over 9N for semiconductor industrial applications. Two types of Ni-catalysts with a cylindrical shape (C1) and churros shape structure (C2) were compared for the assessment. Optical microscopy and FESEM were used to analyze the shape and microstructure of the Ni-catalyst. EDS, XRD, and micro-Raman characterization were performed to examine the composition and properties. BET and Pulse Titration analyses were conducted to check the surface area and catalytic property of the Ni-catalyst. From the composition analysis results, C1 contained a relatively large amount of graphite as an impurity, and C2 contained higher Ni contents than C1. From specific surface area analysis, the specific surface area of C2 was approximately 1.69 times larger than that of C1. From catalytic property analysis, outstanding performance in O₂ and CO impurity removal was observed at room temperature. Therefore, C2, having low-impurity and large specific surface area, is a suitable catalyst for the high-purity inert gas process in the semiconductor industry because of its outstanding performance in O₂ and CO impurity removal at room temperature.

• Journal of the Korean Institute of Gas
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• v.21 no.6
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• pp.52-60
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• 2017

In diffusion process exhaust line during semiconductor manufacturing process, In order to improve the transportation efficiency in the piping by removing "The reaction by-product, $ZrO_2$ and The unreacted material, TEMAZ, TMA, $O_3$, etc" and "Powder being deposited", the piping temperature was raised to $80^{\circ}C$ or more by using the heater jacket, and the bellows at the rear end of the vacuum pump ruptured. So conducted a case study and try to prevent the similar accidents from occurring through case studies. The causes of the accident were analyzed as follows: the inflow of outside air due to the generation of a gap on the suction side of the vacuum pump and heating the pipe with the heater jacket resulted in the overpressure in the pipe due to the volumetric expansion of the gas generated by decomposition of the unreacted TEMAZ, It can be assumed that the most vulnerable bellows of the piping has been ruptured. In order to prevent such accidents, This study is aimed to identify the cause of pipeline rupture accident and to establish safety measures for the prevention of similar accidents by evaluating physical hazards of TEMAZ, which is assumed to be the cause of pipe rupture accident.

• Transactions on Electrical and Electronic Materials
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• v.15 no.5
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• pp.262-264
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• 2014

Pristine ZnO, 3 wt.% Ga-doped (3GZO) and 3 wt.% Ag-doped (3SZO) ZnO nanowires (NWs) were grown using the hot-walled pulse laser deposition (HW-PLD) technique. The doping of Ga and Ag in ZnO NWs was observed by analyzing the optical and chemical properties. We optimized the synthesis conditions, including processing temperature, time, gas flow, and distance between target and substrate for the growth of pristine and doped ZnO NWs. The diameter and length of pristine and doped ZnO NWs were controlled under 200 nm and several ${\mu}m$, respectively. Low temperature photoluminescence (PL) was performed to observe the optical property of doped NWs. We clearly observed the shift of the near band edge (NBE) emission by using low temperature PL. In the case of 3GZO and 3SZO NWs, the center photon energy of the NBE emissions shifted to low energy direction using the Burstein Moss effect. A strong donor-bound exciton peak was found in 3 GZO NWs, while an acceptor-bound exciton peak was found in 3SZO NWs. X-ray photoelectron spectroscopy (XPS) also indicated that the shift of binding energy was mainly attributed to the interaction between the metal ion and ZnO NWs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.205-205
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• 2009

As a p-type semiconductor NiO is potential material which can be used in many application including QD-LED. NiO films were deposited on glass substrates using rf-sputtering method. The properties of resistivity, surface roughness, etc in the NiO films were investigated at different sputtering parameters. The resistivity of $l.88{\times}10^{-2}{\sim}3.71{\times}10^{-2}{\Omega}cm$ with sputtering power(80~200 watts) and change was very low. The sputtering pressure at 3~60 mTorr resulted in rather broad change ofresistivity of $0.58{\times}10^{-2}{\sim}4.67{\Omega}cm$. The oxygen content in sputtering gas was found to be very effective to control the resistivity from $2.01{\times}10^{-2}$ to $1.22{\times}10^2{\Omega}cm$ with 100~2.5% $O_2$ in Ar gas. In addition, the surface roughness showed the RMS values of 0.6~1.1 nm and the dependence on sputtering parameters was weak.

• ETRI Journal
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• v.21 no.3
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• pp.16-21
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• 1999

After etching Al-Cu alloy films using SiCl4/Cl_2/He/CHF3 mixed gas plasma, the corrosion phenomenon at the grain boundary of the etched surface and a passivation layer on the etched surface with an SF6 plasma treatment subsequent to the etching were studied. In Al-Cu alloy system, corrosion occurs rapidly on the etched surface by residual chlorine atoms, and it occurs dominantly at the grain boundaries rather than the crystalline surfaces. To prevent corrosion, the SF6 gas plasma treatment subsequent to etching was carried out. The passivation layer is composed of fluorine-related compounds on the etched Al-Cu surface after the SF6 treatment, and it suppresses effectively corrosion on the surface as the SF6 treatment pressure increases. Corrosion could be suppressed successfully with the SF6 treatment at a total pressure of 300 mTorr. To investigate the reason why corrosion could be suppressed with the SF6 treatment, behaviors of chlorine and fluorine were studied by various analysis techniques. It was also found that the residual chlorine incorporated at the grain boundary of the etched surface accelerated corrosion and could not be removed after the SF6 plasma treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.203-203
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• 2015

Gallium Oxide (Ga2O3) has been widely investigated for the optoelectronic applications due to its wide bandgap and the optical transparency. Recently, with the development of fabrication techniques in nanometer scale semiconductor materials, there have been an increasing number of extensive reports on the synthesis and characterization of Ga2O3 nano-structures such as nano-wires, nano-belts, and nano-dots. In contrast to typical vapor-liquid-solid growth mode with metal catalysts to synthesis 1-dimensional nano-wires, there are several difficulties in fabricating the nano-structures by using sputtering techniques. This is attributed to the fact that relatively low growth temperatures and higher growth rate compared with chemical vapor deposition method. In this study, Ga2O3 nanowires (NWs) were synthesized by using radio-frequency magnetron sputtering method. The NWs were then coated by Au thin films and annealed under Ar or N2 gas enviroment with no supply of Gallium and Oxygen source. Several samples were prepared with varying the post annealing parameters such as gas environment annealing time, annealing temperature. Samples were characterized by using XRD, SEM, and PL measurements. In this presentation, the details of fabrication process and physical properties of branched Ga2O3 NWs will be reported.

• The Transactions of the Korean Institute of Power Electronics
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• v.3 no.2
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• pp.92-98
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• 1998

With the development of semiconductor devices, adoption of microcontroller prevails in industrial area. But in are welding industry, there has not been much progress in adoption of microcontroller technology. Therefore, this paper shows the application of digital control technology to welding machine. This paper presents the design of microcontroller that is appropriate for three phase $CO_2$ gas metal are welding machine. By using microcontroller in $CO_2$ gas metal are welding machine, the overall cost can be reduced compared to analog comtroller. Also TMS370C850 microprocessor is used as overall microcontroller for the are welding machine.

• Journal of Korean Society for Atmospheric Environment
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• v.33 no.5
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• pp.521-528
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• 2017

In the combustion treatment of explosive gases with a high heating value such as $H_2$ and $NH_3$ used in semiconductor and chemical processes, the heat recovery modeling and exergy analysis of the process using the Aspen Plus simulator and its thermodynamic data were performed to examine the recovery of high temperature thermal energy. The heat recovery process was analyzed through this process modeling while the exergy results clearly confirmed that the rigorous reaction mainly occurs in the condenser and the chamber. In addition, the process modeling demonstrated that approximately 95% of the exergy is destructed on the basis of the exergies injected and the exergy being exhausted. Using the exergy technique, which can quantitatively analyze the energy, we could understand the energy flow in the process and confirm that our heat recovery process was efficiently designed.

• Asian Journal of Atmospheric Environment
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• v.4 no.1
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• pp.55-61
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• 2010

The sensitivity of aerosol light extinction coefficient to the aerosol chemical composition change is estimated by (1) calculating the aerosol water content and chemical concentrations by a gas/particle equilibrium model and (2) calculating the aerosol light extinction coefficient by a Mie theory based optical model. The major chemical species are total (gas and particle phase) sulfuric acid, total nitric acid, and total ammonia which are based on the measurement data at Seoul and Gosan. At Seoul, since there were enough ammonia to neutralize both total sulfuric acid and total nitric acid, the dry ionic concentration is most sensitive to the variation of the total nitric acid level, while the total mass concentration (ionic concentration plus water content) and thus, the aerosol light extinction coefficient are primarily determined by the total sulfuric acid. At Gosan, since the concentration of ambient sulfuric acid was the highest among the inorganic species, sulfate salts determined aerosol hygroscopicity. Thus, both ionic and total mass concentration, and resultant aerosol light extinction coefficient are primarily determined by the sulfuric acid level.