• Korean Chemical Engineering Research
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• v.49 no.5
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• pp.560-564
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• 2011

The objective of this study is to propose a mathematical model for a pervaporation process for concentrating hydrogen peroxide. The process was developed by NASA, which consists of a shell and membrane tubes, where a liquid hydrogen peroxide solution flows in the shell, and a sweep gas flows in the tubes countercurrent to each other. The liquid retentate is concentrated as more water molecules permeate and evaporate through the membrane than hydrogen peroxide. For this process, a mathematical model has been developed in the form of a system of nonlinear partial differential algebraic equations based on a sorption-diffusion mechanism for permeation, an Arrhenius relationship for the temperature dependency of the permeate flux, and mass and momentum balances for the liquid concentrations and flows in the membrane module. The dynamic behavior of the concentration of hydrogen peroxide in the retentate side has been simulated by solving a simplified version of the proposed model, and the result is compared with the experimental data reported in the NASA patent.

• Journal of the Semiconductor & Display Technology
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• v.15 no.4
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• pp.27-32
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• 2016

In recent years, various researches have been conducted to improve process yields in accordance with miniaturization of semiconductor. APC(Advanced Process Control) is considered one of the methods to increase in process yields. APC is a process control technology that maintains optimal process conditions and improves the reliability of results by controlling and formulating the relationship among the various process parameters and results. We built up an optical diagnostic system with a three-channel spectrometer. The system detects signals those represent the changes of specific emission peaks intensity versus each reference and converts it into MFC control signals to get back the changes to the reference state. Controlling the MFC continues until the specific peak intensity changes into the normal state. Through this device, we tested a APC automatically responding to process changes during the plasma process. We could control gas flow while sputtering process on going and improve uniformity of plasma intensity with this system. Finally, we have got results those enhance the plasma intensity non-uniformity to 7.7% from 15.5%. Also, found unexpected oxygen flow what is estimated to be come out from IGZO target.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.11
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• pp.862-866
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• 2012

Surface passivation of AlGaN/GaN heterojunction structure was examined through the thermal oxidation of evaporated Al. The Al-oxide passivation increased channel conductance of two dimensional electron gas (2DEG) on the AlGaN/GaN interface. The sheet resistance of 463 ohm/${\Box}$ for 2DEG channel before $Al_2O_3$ passivation was decreased to 417 ohm/${\Box}$ after passivation. The oxidation of Al induces tensile stress to the AlGaN/GaN structure and the stress seemed to enhance the sheet carrier density of the 2DEG channel. In addition, the $Al_2O_3$ films formed by thermal oxidation of Al suppressed thermal deterioration by the high temperature annealing.

• Applied Chemistry for Engineering
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• v.30 no.1
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• pp.108-113
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• 2019

In this study, the decomposition characteristics of perfluorinated compounds generated in semiconductor manufacturing process were investigated by using a high temperature plasma. The analysis results revealed that $CF_4$ and $SF_6$ showed the highest efficiency at 12.8 kW power, but no significant difference was observed at the power above. Experimental results showed that the maximum efficiency was obtained at the flow rate of about 14 mL/min and the treatment efficiency decreased as the flow rate increased or decreased with respect to the flow rate of 14 mL/min. As a result, the decomposition characteristics of perflurocompounds (PFCs) using a high temperature plasma could be grasped, and also the basis for the treatment of PFCs and greenhouse gases generated in the semiconductor manufacturing process could be obtained.

• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.61-66
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• 2021

In this study, we studied the alternative of plasma resistant ceramic parts that constitute plasma chambers in the semiconductor dry etching process. MgO-Al₂O₃-SiO₂(MAS) glass was made of 13 types of glass using the Design Of Experiments(DOE) and the effect on thermal properties such as glass transition temperature and crystallization temperature depending on the content of each composition and etching resistance to CF₄/O₂/Ar plasma gas. MAS glass showed excellent plasma resistance and surface roughness up to 20 times higher than quartz glass. As the content of Al₂O₃ and MgO increases, the plasma resistance is improved, and it has been confirmed that it has an inverse relationship with SiO₂.

• Korean Journal of Materials Research
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• v.10 no.12
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• pp.807-811
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• 2000

CeO$_2$ and SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin films for MFISFET (Metal-ferroelectric-insulator-semiconductor-field effect transistor) were deposited by r.f. sputtering and pulsed laser ablation method, respectively. The effects of sputtering gas ratio(Ar:O$_2$) during deposition for CeO$_2$ films were investigated. The CeO$_2$ thin films deposited on Si(100) substrate at $600^{\circ}C$ exhibited (200) preferred orientation. The preferred orientation, Brain size and surface roughness of films decreased with increasing oxygen to argon gas ratio. The films deposited under the condition of Ar:O$_2$= 1 : 1 showed the best C- V characteristics. The leakage current of films showed the order of 10$^{-7}$ ~10$^{-8}$ A at 100kV/cm. The SBT thin films on CeO$_2$/Si substrate showed dense microstructure of polycrystalline phase. From the C-V characteristics of MFIS structure with SBT film annealed at 80$0^{\circ}C$, the memory window width was 0.9V at 5V The leakage current density of Pt/SBT/CeO$_2$/Si structure annealed at 80$0^{\circ}C$ was 4$\times$10$^{-7}$ /$\textrm{cm}^2$ at 5V.

• Journal of the Korean Institute of Gas
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• v.25 no.6
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• pp.35-44
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• 2021

The PR (Photo Resist) process in the semiconductor process is a process that uses a mixture of flammable substances. Due to the process equipment is installed in a clean room and when flammable substances leak, there is a high risk of suffocation, fire, and explosion. It is necessary to analyze the impact of accidents that may occur during operation and to evaluate whether the safety of workers can be guaranteed. In this study, the value of radiant heat and temperature change at the monitor point set up virtual inside the clean room was confirmed through CFD simulation of 10 leak and fire scenarios using the FLACS CFD - Fire Module. A fire that occurs inside a clean room transfers high radiant heat to the inter-story structure, but its scope is quite limited, and it is unlikely that it will collapse in a single fire accident. There was no scenario in which two stairs leading to the exit were exposed to high radiant heat at the same time due to a fire accident, therefore workers were able to escape in case of a fire. In addition, it was confirmed that the level of radiant heat and temperature rise rapidly decreased as they moved downstairs. According to the API 520 standard, workers exposed to 6.31 kW/m² of radiant heat that workers can withstand for 30 seconds were confirmed that it was possible to sufficiently escape from the inside.

• Journal of Sensor Science and Technology
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• v.5 no.2
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• pp.21-27
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• 1996

Thick film $TiO_{2}/WO_{3}$ butane gas sensors were fabricated by the screen printing method and their gas sensing characteristics were investigated. The sensitivity of $TiO_{2}/WO_{3}$ thick film was higher than that of pure $WO_{3}$ film to butane. The $WO_{3}$ film with 2wt.% $TiO_{2}$ showed the highest sensitivity to butane. And the optimum heat treatment temperature was $650^{\circ}C$. That film showed the highest sensitivity to butane at the operating temperature of $350^{\circ}C$. The sensitivity of the film to 20000ppm butane in air was 80% at the operating temperature of $350^{\circ}C$.

• Journal of information and communication convergence engineering
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• v.7 no.1
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• pp.72-77
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• 2009

Three different procedures for adding Pd compounds to $SnO_2$ particles have been investigated. These processes are: (1) coprecipitation; (2) dried powder impregnation; and (3) calcined powder impregnation. The microstructures of $SnO_2$ particles have been analyzed by X-ray diffraction (XRD), Brunauer-Emmett-Teller (BET), scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS). In the coprecipitaion method, the process does not restrain the growth of $SnO_2$ particles and it forms huge agglomerates. In the dried powder impregnation method, the process restrains the growth of $SnO_2$ particles and the surfaces of the agglomerates have many minute pores. In the calcined powder impregnation method, the process restrains the growth of $SnO_2$ particles further and the agglomerates have a lot more minute pores. The sensitivity ($S=R_{air}/R_{gas}$) of the $SnO_2$ gas sensor made by the calcined powder impregnation process shows the highest value (S = 21.5 at 5350 ppm of $C_3H_8$) and the sensor also indicates the lowest operating temperature of around $410^{\circ}C$. It is believed that the best result is caused by the plenty of minute pores at the surface of the microstructure and by the catalyst Pd that is dispersed at the surface rather than the inside of the agglomerate. Schematic models of Pd distribution in and on the three different $SnO_2$ particles are presented.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.3 s.36
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• pp.227-233
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• 2005

Carbon nanotubes (CNT) which were grown, on the alumina substrate with a pair of comb-type Au electrodes, by plasma enhanced chemical vapor deposition have been investigated for $NO_2$ gas sensor. The electrical resistance of CNT film decreased with temperature, indicating a semiconductor type of CNT, and also the resistance of CNT sensor decreased with increasing $NO_2$ concentration. Upon exposure to $NO_2$ gas, the electrical resistance of CNT film sensor rapidly decreased within 3 minutes, and then showed a constant value after $20\~30$ minutes. It is found that the sensitivity of CNT sensor has been improved by air oxidation. The CNT sensor oxidized at $450^{\circ}C$ for 30 minutes showed higher sensitivity value than that without oxidation by $27\%$, even for a low 250 ppb $NO_2$ concentration at operating temperature of $200^{\circ}C$. But it needs a recovery time more than 20 minutes for reuse after detection of $NO_2$ gas.