• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 D
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• pp.2904-2906
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• 2000

본 논문에서는 반도체 제조 공정에서 장비와 호스트간에 통신을 할 수 있는 SECS(SEMI Equipment Communications Standard) 프로토를의 개발을 제안한다. SECS 프로토콜은 메시지 전송을 위한 헤더 부분을 정의하는 SECS-I 프로토콜과 메시지 내용을 정의하는 SECS-II 프로토콜로 나뉘어지는데, RS232 시리얼 통신을 하는 SECS-I 프로토콜 대신에 이더넷(ethernet)을 통해 TCP/IP 통신을 할 수 있는 HSMS 프로토콜을 구현하고자 한다. HSMS(High-speed SECS Message Services)프로토콜은 SECS-I과 마찬가지로 SECS-II 메시지 내용을 전송 할 수 있도록 10바이트 크기의 헤더로 정의된다. HSMS 프로토콜 통신은 TCP/IP를 기반으로 하기 때문에 SECS 메시지 전송을 위한 통신 선로를 설정하기 위해 소켓 API를 응용하고 항상 통신 대기상태를 유지하기 위해 데몬(daemon) 형태로 구성한다. 실제 메시지 내용을 정의하고 있는 SECS-II 프로토콜은 데이터 인덱스 테이블과 표준에 정의된 형식에 맞게 파일형태나 DLL(Dynamic Link Library)형태로 구성하고 프로세스 프로그램(process program)을 수행하기 위해 SECS 프로토콜 표준에서 정의하는 SML(SECS Message Language)형식으로 변환 할 수 있는 스크립트 변환기(script translator)를 구현한다. 또한 HSMS 프로토콜이 전송할 SECS-II 메시지를 저장하기 위한 파라미터를 정의하고 실제 통신을 위한 테스트 베드를 위한 응용 프로그램을 제작한다

• E2M - 전기 전자와 첨단 소재
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• 제10권1호
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• pp.8-14
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• 1997

The UV/O$_{3}$ dry cleaning has been well known in removing organic molecules. The UV/O$_{3}$ dry cleaning method was performed to clean the Si wafer surfaces and contact holes contaminated by organic molecules such as residual PR. During the cleaning process, the Si surfaces were analyzed with X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM) and ellipsometer. When the UV/O$_{3}$ dry cleaning at 200'C was performed for 3 minutes, the residual photoresist was almost removed on Si wafer surfaces, but Si surfaces were oxidized. For UV/O$_{3}$ application of contact hole cleaning, the contact string were formed using the equipment of ISRC (Inter-university Semiconductor Research Center). Before Al deposition, UV/O$_{3}$ (at 200.deg. C) dry cleaning was performed for 3 minutes. After metal annealing, the specific contact resistivity was measured. Because UV/O$_{3}$ dry cleaning removed organic contaminants in contact holes, the specific contact resistivity decreased. Each contact hole size was different, but the specific contact resistivities were all much the same. Thus, it is expected that the UV/O$_{3}$ dry cleaning method will be useful method of removal of the organic contaminants at smaller contact hole cleaning.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1364-1365
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• 2006

본 논문에서는 두께 0.25 mm의 알루미늄 포일 (foil)을 이용해 나노기공 알루미나 주형을 만들었다. 우선 알루미늄 포일 표면의 유기물을 제거한 후, 전해연마 방법을 이용하여 표면을 매끄럽게 하였다. 또, 양극산화를 통해 알루미늄 표면에 나노기공을 형성하였다. 나노기공 알루미나($Al_{2}O_{3}$) 주형 위에 Polymethyl methacrylate (PMMA)를 얇게 도포하여 나노기공 사이로 침투시킨 후 주형을 제거하여 나노기둥인 PMMA를 얻었다. 이것을 나노임프린트 리소그라피 기법을 이용하여 태양전지의 N-type 물질로 맏이 사용되는 티타니아 ($TiO_2$)의 면적을 넓게 할 수 있다.

• 대한안전경영과학회지
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• 제17권3호
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• pp.355-362
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• 2015

There has been an increase of using Bosch Process to fabricate MEMS Device, TSV, Power chip for straight etching profile. Essentially, the interest of TSV technology is rapidly floated, accordingly the demand of Bosch Process is able to hold the prominent position for straight etching of Si or another wafers. Recently, the process to prevent under etching or over etching using EPD equipment is widely used for improvement of mechanical, electrical properties of devices. As an EPD device, the OES is widely used to find accurate end point of etching. However, it is difficult to maintain the light source from view port of chamber because of contamination caused by ion conflict and byproducts in the chamber. In this study, we adapted the SPOES to avoid lose of signal and detect less open ratio under 1 %. We use 12inch Si wafer and execute the through etching 500um of thickness. Furthermore, to get the clear EPD data, we developed an algorithm to only receive the etching part without deposition part. The results showed possible to find End Point of under 1 % of open ratio etching process.

• 한국재료학회지
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• 제28권12호
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• pp.748-757
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• 2018

Inorganic semiconductor compounds, e.g., CIGS and CZTS, are promising materials for thin film solar cells because of their high light absorption coefficient and stability. Research on thin film solar cells using this compound has made remarkable progress in the last two decades. Vacuum-based processes, e.g., co-evaporation and sputtering, are well established to obtain high-efficiency CIGS and/or CZTS thin film solar cells with over 20 % of power conversion. However, because the vacuum-based processes need high cost equipment, they pose technological barriers to producing low-cost and large area photovoltaic cells. Recently, non-vacuum based processes, for example the solution/nanoparticle precursor process, the electrodeposition method, or the polymer-capped precursors process, have been intensively studied to reduce capital expenditure. Lately, over 17 % of energy conversion efficiency has been reported by solution precursors methods in CIGS solar cells. This article reviews the status of non-vacuum techniques that are used to fabricate CIGS and CZTS thin films solar cells.

• 전기전자학회논문지
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• 제22권4호
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• pp.1202-1205
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• 2018

본 논문에서는 4H-SiC물질 기반으로 제작된 ggNMOS를 제안하고 전기적 특성을 분석하였다. 4H-SiC는 Wide Band-gap 물질로 Si 물질 보다 면적대비 특성과 고전압 특성이 뛰어나 전력반도체 분야에 주목받고 있다. 제안된 소자는 높은 감내 특성과 Strong snapback 특성을 가진다. 공정은 SiC 공정으로 이루어 졌으며 TLP 측정 장비를 통해 전기적 특성을 분석하였다.

• 소성∙가공
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• 제31권5호
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• pp.290-295
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• 2022

Recently, the use of high-tech ceramic parts in functional electronic parts, automobile parts and semiconductor equipment parts is increasing. These ceramics materials are required to have high reproducibility, reliability, large size and complex shapes. The researchers initiated the work to develop a new shaping method called gel casting, which allows high performance ceramic materials with a complex shape to be produced. The manufacturing process parameters of gel casting include uniform mixing of the initiator, bubble removal, and slip injection. In this study, we analyzed the dispersion and gelation characteristics according to the change in the additive content of the alumina slurry in the gel casting process. The alumina slurry for gel casting was prepared by mixing a solvent, a monomer and a dispersant through a ball mill. Alumina powder and a gelation initiator were added to the mixed solution, and ball milling was performed for 24 hours. A viscosity of 6,435 cps and a stable zeta potential value were obtained under the conditions of alumina powder content of 55 vol% and dispersant 2.0 wt%. After curing for 12 hours by adding aps 0.1wt%, TEMED 0.2wt%, and Monomer 3, 5wt%, it was possible to separate from the molding cup, confirming that the gelation was completed.

• Tribology and Lubricants
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• 제37권6호
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• pp.213-223
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• 2021

Electrochemical mechanical planarization (ECMP) was developed to overcome the shortcomings of conventional chemical mechanical planarization (CMP). Because ECMP technology utilizes electrochemical reactions, it can have a higher efficiency than CMP even under low pressure conditions. Therefore, there is an advantage in that it is possible to reduce dicing and erosions, which are physical defects in semiconductor CMP. This paper summarizes the papers on ECMP published from 2003 to 2021 and analyzes research trends in ECMP technology. First, the material removal mechanisms and the configuration of the ECMP machine are dealt with, and then ECMP research trends are reviewed. For ECMP research trends, electrolyte, processing variables and pads, tribology, modeling, and application studies are investigated. In the past, research on ECMP was focused on basic research for the development of electrolytes, but it has recently developed into research on tribology and process variables and on new processing systems and applications. However, there is still a need to increase the processing efficiency, and to this end, the development of a hybrid ECMP processing method using another energy source is required. In addition, ECMP systems that can respond to the developing metal 3D printing technology must be researched, and ECMP equipment technology using CNC and robot technology must be developed.

• 한국산업융합학회 논문집
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• 제26권1호
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• pp.105-112
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• 2023

We analyze the global market for flexible electronic circuits, technical considerations, and analyze the market for application areas and regions. In the market analysis of the application field, the display field has the greatest influence in terms of market size and annual growth rate, and the OLE D lighting market size is expected to grow by nearly 50% in 2026. The multilayer flexible electronics, which dependently requires the semiconductor technology, has a larger market size than other structures and its growth rate is relatively large, leading the market and will be further analyzed in depth. The market size of multilayer flexible electronics applied to display field is expected to show an annual growth rate of 21.1% from $2.7 billion in 2017 to $9.8 billion in 2026, and the OLED market is expected to grow by 75.2% during the same periods. Recently, as electronic products have been miniaturized and advanced, and robust installation in a small space is required, companies that preoccupy multilayer structure or rigid flexible electronic circuit technology have an advantage in competitiveness, so many companies are trying to obtain this technology. These efforts are systematically supported by many countries because they can achieve mutual growth by strengthening the competitiveness of the application field and the same industry. In the case of Korea, a support system is established, but it is required to expand and activate it, and to localize manufacturing equipment and materials.

• 품질경영학회지
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• 제51권3호
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• pp.419-434
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• 2023

Purpose: Measurement results obtained under non-ideal measurement environment conditions may contain uncertain factors. As a result, the reliability of measurement results may be deteriorated. In this study, we tried to find ways to improve quality by evaluating and applying measurement uncertainty based on GUM. Methods: In the flatness measurement of semiconductor parts, uncertainty factors that could occur under actual environmental conditions of workers were derived, and measurement uncertainties were calculated, and methods for minimizing the main factors affecting the measurement results were analyzed. Results: Depending on the part and the coordinate measuring machine, it was shown that the effect of dispersion caused by repeated measurements as type A uncertainty and the effect of the calibration results of equipment as type B uncertainty have the main influence. Conclusion: Depending on the uncertainty factors of type A and type B and the influence of the total expanded uncertainty, the central value and confidence interval of the initial measurement results showed fluctuations. It is considered that analysis and measures for the main uncertainty factors are needed as quality improvement in the industrial field.