• Transactions on Electrical and Electronic Materials
• /
• v.6 no.2
• /
• pp.39-45
• /
• 2005

Numerical and visualization procedures are used in a finite difference grid to analyze and better understand the heat transfer in the MEMS based air micro-jet array (MIA) impingement cooling device. The Navier-Stokes (NS) equations with incompressible flow are solved using an implicit procedure. The temperature contour and velocity vector visualization diagrams are used for illustration. The computed temperature distribution at the bottom of the MIA is in good agreement with the experimental measurement data. The parameters are investigated to improve the efficiency of heat transfer in the MIA. The optimum configuration of the MIA is suggested. The present modeling explains the flow phenomenon and yields valuable information to understand the flow and heat transfer in MIA.

• International Journal of Control, Automation, and Systems
• /
• v.1 no.1
• /
• pp.1-10
• /
• 2003

This paper presents a high-precision magnetically levitated (maglev) stage to meet demanding motion specifications in the next-generation precision manufacturing and nanotechnology. Characterization of dynamic behaviors of such a motion stage is a crucial task. In this paper, we address the issues related to the stochastic modeling of the stage including transfer function identification, and noise/disturbance analysis and prediction. Provided are test results on precision dynamics, such as fine settling, effect of optical table oscillation, and position ripple. To deal with the dynamic coupling in the platen, we designed and implemented a multivariable linear quadratic regulator, and performed time-optimal control. We demonstrated how the performance of the current maglev stage can be improved with these analyses and experimental results. The maglev stage operates with positioning noise of 5 nm rms in $\chi$ and y, acceleration capabilities in excess of 2g(20 $m/s^2$), and closed-loop crossover frequency of 100 Hz.

• Proceedings of the IEEK Conference
• /
• 2005.11a
• /
• pp.683-686
• /
• 2005

By now, we have been analysing the resistance values on 3 dimensional structure using experimental statical method or theoretical modeling, while devices miniaturizing reveals the limitation of the traditional methods to calculate 3 dimensional resistance. In addition, 2 dimensional analysing can not produce 3 dimensional characteristic following miniaturizing. To solve the limitations , we must do high level modeling of semi-conductor process. In this thesis, we analyzed the Laplace equation that is the basic and important for 3 dimensional structure resistance with computer simulation method and on the basis of this, analyzed the characteristic of resistance of 3 dimensional structure communication semiconductor device.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.9 no.4
• /
• pp.225-232
• /
• 2009

An analytical compact model for the asymmetric lightly doped Double Gate (DG) MOSFET is presented. The model is developed using the Lambert Function and a 2-dimensional (2-D) parabolic electrostatic potential approximation. Compact models of the net charge and channel current of the DG-MOSFET are derived in section 2. Results for the channel potential and current are compared with 2-D numerical data for a lightly doped DG MOSFET in section 3, showing very good agreement.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.6 no.1
• /
• pp.1-9
• /
• 2006

We introduce our in-house program, NANOCAD, for the modeling and simulation of carrier transport in nanoscale MOSFET devices including quantum-mechanical effects, which implements two kinds of modeling approaches: the top-down approach based on the macroscopic quantum correction model and the bottom-up approach based on the microscopic non-equilibrium Green’s function formalism. We briefly review these two approaches and show their applications to the nanoscale bulk MOSFET device and silicon nanowire transistor, respectively.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.15 no.6
• /
• pp.647-652
• /
• 2015

Pull-in voltage model of nano-electro-mechanical system with graphene is investigated for the device optimization. In the pull in voltage model, thickness of graphene layer is assumed to be uniform in vertical and lateral direction. Finite element analysis simulation has verified the feasibility of the suggested model. From the suggested model, pull-in voltage change with graphene thickness and cantilever length can be estimated. Maximum induced stress and graphene thickness have a reciprocal relationship.

• ETRI Journal
• /
• v.32 no.4
• /
• pp.530-539
• /
• 2010

As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, quantum mechanical effects are expected to become more and more important. Accurate quantum transport simulators are required to explore the essential device physics as a design aid. However, because of the complexity of the analysis, it has been necessary to simulate the quantum mechanical model with high speed and accuracy. In this paper, the modeling of double gate MOSFET based on an adaptive neuro-fuzzy inference system (ANFIS) is presented. The ANFIS model reduces the computational time while keeping the accuracy of physics-based models, like non-equilibrium Green's function formalism. Finally, we import the ANFIS model into the circuit simulator software as a subcircuit. The results show that the compact model based on ANFIS is an efficient tool for the simulation of nanoscale circuits.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.238-242
• /
• 2001

In this paper, the current-voltage characteristics of a 4H-SiC MESFET is simulated by using the Atlas Simulation tool. we are able to use the simulator to extract more information about the new material 4H-SiC, including the mobility, velocity-field Curve and the Schottky barrier height. We have enabled and used the new simulator to investigate breakdown Voltage and thus predict operation limitations of 4H-SiC device. Modeling results indicate that the Breakdown Voltage is 197 V and Current is 100 mA

• Journal of Power Electronics
• /
• v.18 no.6
• /
• pp.1901-1911
• /
• 2018

This study presents a circuit model for simulating the switching transients of insulated-gate bipolar transistors (IGBTs) with inductive load switching. The modeling approach used in this study considers the behavior of IGBTs and freewheeling diodes during the transient process and ignores the complex semiconductor physics-based relationships and parameters. The proposed circuit model can accurately simulate the switching behavior due to the detailed consideration of device-circuit interactions and the nonlinear nature of model parameters, such as internal capacitances. The developed model is incorporated in an IGBT loss calculation module of an electromagnetic transient simulation program to enable the estimation of switching losses in voltage source converters embedded in large power systems.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.38 no.8
• /
• pp.1-12
• /
• 2001

The adaptive learning circuit is designed on the basis of modeling of MFSFET (Metal-Ferroelectric-Semiconductor FET) and the numerical results are analyzed. The output frequency of the adaptive learning circuit is inversely proportional to the source-drain resistance of MFSFET and the capacitance of the circuit. The saturated drain current with input pulse number is analogous to the ferroelectric polarization reversal. It indicates that the ferroelectric polarization plays an important role in the drain current control of MFSFET. The output frequency modulation of the adaptive learning circuit is investigated by analyzing the source-drain resistance of MFSFET as functions of input pulse numbers in the adaptive learning circuit and the dimensionality factor of the ferroelectric thin film. From the results, the frequency modulation characteristic of the adaptive learning circuit are confirmed. In other words, adaptive learning characteristics which means a gradual frequency change of output pulse with the progress of input pulse are confirmed. Consequently it is shown that our circuit can be used effectively in the neuron synapses of nueral networks.