• Journal of the Mineralogical Society of Korea
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• v.27 no.3
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• pp.125-134
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• 2014

The Janggun mine (Longitude $E129^{\circ}$ 03' 40", Latitude $N36^{\circ}$ 51' 19") was once operated as an underground mine and recently significant amount of mine and leachate water has been discharged from the mine adits and tailing dumps. Mine and leachate waters are characterized by neutral to weakly basic pH values (6.81-9.59). Major cations and anions have concentrations between 6.70-129.80 mg/L of Mg, 289.29-661.02 mg/L of Ca, 4.74-14.38 mg/L of Mn and 1205.00-2448.69 mg/L of $SO{_4}^{2-}$. Brownish yellow precipitates that found in the stream bottom consist of poorly crystallized 2-line ferrihydrite ($Fe_2O_3{\cdot}0.5H_2O$. Scanning electron microscope (SEM) photographs show that brownish yellow precipitates consisted of micro-sized granular particles of about $0.1{\mu}m$ in diameter. Semi-quantitative energy dispersive spectrometry (EDS) analyses show that these samples contained mainly Fe with minor Mn, Ca, Si and As.

• Journal of the Korean Chemical Society
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• v.41 no.3
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• pp.117-122
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• 1997

On the basis of our previous paper[Bull. Korean Chem. Soc. 1995, 16, 1015], the relative stability, ionization potential, and chemical reaction of the neutral and multiply charged $C_{60}$n ions(n=3+ to 6-) have been investigated by the semi-empirical MNDO method. $C_{60}^{1-}$ has the highest stability. The ionization potential values of the $C_{60}$ ions range from 15.31 eV of $C_{60}^{2+}$ to -13.01 eV of $C_{60}^{6-}$. These values show a linear relationship according to charges. The average IP per charge is 3.15 eV from our calculations and 3.22 eV from the linear function of IP. A charge- or electron-transfer reaction of $C_{60}^{n+}$ will only occur if the ionization potential of any guest molecule is lower than the electron affinity of the host $C_{60}^{n+}$. If the energy gap between ionization potential and electron affinity, ${\Delta}_{IP-EA}$, is high, charge-transfer reactions arise by the charge-controlled effect. However, if ${\Delta}_{IP-EA}$ is low, electron-transfer reactions arise by the frontier-controlled effect.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.5
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• pp.189-197
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• 2006

A stoichiometric mixture of evaporating materials for $AgGaSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C\;and\;420^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501eV-(8.79x10^{-4}eV/K)T^2(T+250K)$. After the as-grown $AgGaSe_2$ single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of $AgGaSe_2$ single crystal thin films has been investigated by the photoluminescence (PL) at 10K. The native defects of $V_{Ag},\;V_{Se},\;Ag_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaSe_2$ single crystal thin films to an optical p-type. Also, we confirmed that Ga in $AgGaSe_2$/GaAs did not form the native defects because Ga in $AgGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.923-932
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• 2002

A stoichiometric mixture of evaporating materials for CdIn$\_$2/S$\_$4/ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdIn$\_$2/S$\_$4/ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were 630 $\^{C}$ and 420 $\^{C}$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of CdIn$\_$2/S$\_$4/ single crystal thin films measured from Hall effect by van der Pauw method are 9.01$\times$10$\^$16/ cm$\^$-3/ and 219 ㎠/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of energy band gap on CdIn$\_$2/S$\_$4/ single crystal thin films was found to be Eg(T) ＝ 2.7116 eV - (7.74 $\times$ 10$\^$-4/ eV) T$\^$2//(T＋434). After the as-grown CdIn$\_$2/S$\_$4/ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of CdIn$\_$2/S$\_$4/ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of V$\_$cd/, V$\_$s/, Cd$\_$int/ and S$\_$int/ obtained by PL measurements were classified as donors or accepters type. And we concluded that the heat-treatment in the S-atmosphere converted CdIn$\_$2/S$\_$4/ single crystal thin films to an optical p-type. Also, we confirmed that In in CdIn$\_$2/S$\_$4/GaAs did not from the native defects because In in CdIn$\_$2/S$\_$4/ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.829-838
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• 2007

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD).The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}\;cm^{-3},\;345\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $Eg(T)\;=\;2.6400\;eV\;-\;(7.721{\times}10^{-4}\;eV/K)T^2/(T+399\;K)$. After the as-grown single crystal $CdGa_2Se_4$ thin films were annealed in Cd-, Se-, and Ga -atmospheres, the origin of point defects of single crystal $CdGa_2Se_4$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. We concluded that the heat-treatment in the Cd-atmosphere converted single crystal $CdGa_2Se_4$ thin films to an optical p-type. Also, we confirmed that Ga in $CdGa_2Se_4/GaAs$ did not form the native defects because Ga in single crystal $CdGa_2Se_4$ thin films existed in the form of stable bonds.

• Journal of Korea Game Society
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• v.15 no.5
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• pp.143-152
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• 2015

Unlike simulating general 'particle-based fluid explosion', simulating fluid with elasticity requires various experimental methods in order to show the realistic deformation of the matter. The existing studies on particle-based viscoelastic fluid only focused on matters' plastic deformation which can be found in mud or paint, based on the maximum distortion energy theory and maximum shear stress theory. However, these former researches could not simulate the brittle deformation which can be seen from silicon or highly elastic rubber when great external forces above limits are applied. This study suggests a brittle simulation method based on the Coulomb-Mohr theory, the idea that a yield occurs when maximum stress on a matter reaches to its rupture stress. This theory has a significant difference from the existing particle-based simulations which measures the forces on a matter by length or volume. Using a strong-elastic semifluid which Coulomb-Mohr theory is applied, realistic deformation process of a matter was observed as its forced surface reached to the rupture stress. When semifluid hit the ground, the impact of deformation can be explained by using Coulomb-Mohr theory.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.157-167
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_{2}$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_{2}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_{2}$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}cm^{-3}$ and $295cm^{2}/V{\codt}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$ = 2.8382 eV - ($8.68{\circ}10^{-4}$ eV/K)$T^{2}$/(T + 155 K). The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_{2}$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $CuAlSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1-}$, $B_{1-}$, and $C_{1-}$ exciton peaks for n = 1.

• Korean Journal of Poultry Science
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• v.42 no.2
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• pp.125-132
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• 2015

The Far Infrared Ray (FIR) is part of the natural energy as light spectrum of sunlight. Human can disentangle the colors within visible ray, but FIR is invisible to human sight because it has longer wavelength than visible ray. The effect of using FIR on broiler performance, blood biochemical profiles and fecal gas emission from litter. Day-old semi-broiler chicks (Ross ♂ ${\times}$ Hyline ♀) were obtained and assigned to eight pens, 2 replicates of white and green color LED light, and with FIR on each color light, in a 20L:4D of lighting program. The body weight gain and feed efficiency were tend to improve under the green color than white color, which were increased by exposing to FIR on both color light. Emission of ammonia and lower hydrocarbons from litter were not different from each color but there was a decrease by exposing to FIR regardless of light color. The level of blood aspartate aminotransferase (AST) tends to be decreased under green color than white color, and this tendency becomes more pronounced as exposing to FIR. Therefore significantly increased under white color without FIR than green color with FIR (P<0.05). The levels of albumin and immunoglobulin were not different from each color but there was an increase by exposing to FIR regardless of light color. In conclusion, exposing to Far Infrared Ray (FIR) when broiler raising, there is potential to increase broiler performance because of improvement of bioactivity and raising environment.

• Journal of the Korean Society for Nondestructive Testing
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• v.25 no.2
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• pp.117-126
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• 2005

A stoichiometric mixture of evaporating materials for $AgGaS_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaS_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $590^{\circ}C\;and\;440^{\circ}C$, respectively The temperature dependence of the energy band gap of the $AgGaS_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7284 eV-(8.695{\times}10^{-4}eV/K)T^2/T(T+332K)$. After the as-grown $AgGaS_2$, single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of $AgGaS_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{Ag},\;V_s,\;Ag_{int},\;and\;S_{int}$, obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaS_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $AgGaS_2$ crystal thin films did not form the native defects because Ga in $AgGaS_2$ single crystal thin films existed in the form of stable bonds.

• Journal of Korean Society of Steel Construction
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• v.27 no.3
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• pp.311-321
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• 2015

In this study, an experimental study to evaluate the seismic performance of beam-to-column connection for medium and low-rise building was conducted. Five connections using SHN490 steel were made with test variables such as flange welded or bolted, web welded or bolted. Specimen SHN-W-W is web welded and flange welded type. Specimen SHN-W-B is web welded and flange bolted type. Specimen SHN-B-W is web bolted and flange welded type. Specimen SHN-B-B is web bolted and flange bolted type. Specimen SHN-EP is a connection with the end plate to the beam ends. Cyclic loadings was applied at the tip of beam following KBC2009 load protocol. The load vs rotation curves for different connection are shown and final failure mode shapes are summarized. The connections are classified in terms of stiffness and strength as semi-rigid or rigid connection. Energy dissipation capacities for seismic performance evaluation were compared.