• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.386-391
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• 2003

Sing1e crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $410^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}\;s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.86\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;155K)$. After the as-grown single crystal $CuAlSe_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal $CuAlSe_2$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal $CuAlSe_2$ thin films to an optical n-type. Also, we confirmed that Al in $CuAlSe_2/GaAs$ did not form the native defects because Al in single crystal $CuAlSe_2$ thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.282-285
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• 2003

Single crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $410\;^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$ source at $680\;^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}\;and\;295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68\;{\times}\;10^{-4}eV/K)T^2/(T\;+\;155\;K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_2$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the $\Delta$so definitely exists in the ${\Gamma}_5$ states of the valence band of the $CuAlSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.10
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• pp.871-880
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• 2003

Single crystal CuAlSe$_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410 C with hot wall epitaxy (HWE) system by evaporating CuAlSe$_2$ source at 680 C. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X -ray diffraction (DCXD). The carrier density and mobility of single crystal CuAlSe$_2$ thin films measured with Hall effect by van der Pauw method are 9.24${\times}$10$\^$16/ cm$\^$-3/ and 295 cm$^2$/V $.$ s at 293 K, respectively. The temperature dependence of the energy band gap of the CuAlSe$_2$ obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 2.8382 eV - (8.86 ${\times}$ 10$\^$-4/ eV/K)T$^2$/(T + 155K). After the as-grown single crystal CuAlSe$_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal CuAlSe$_2$ thin films has been investigated by PL at 10 K. The native defects of V$\_$cd/, V$\_$se/, Cd$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal CuAlSe$_2$ thin films to an optical n-type. Also, we confirmed that Al in CuAlSe$_2$/GaAs did not form the native defects because Al in single crystal CuAlSe$_2$ thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.76-77
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• 2005

Single crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410$^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$ source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X-ray diffraction (DCXO). The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorpt ion spectra was wel1 described by the Varshni's relation, $E_g$(T) = 2.8382 eV - ($8.86\times10^{-4}$ eV/H)$T_2$/(T + 155K). After the as-grown single crystal $CuAlSe_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal $CuAlSe_2$ thin films has been investigated by PL at 10 K. The native defects of $V_{cd}$, $V_{se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal $CuAlSe_2$ thin films to an optical n-type. Also. we confirmed that hi in $CuAlSe_2$/GaAs did not form the native defects because Al in single crystal $CuAlSe_2$ thin films existed in the form of stable bonds.

• Journal of Community Nutrition
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• v.8 no.4
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• pp.171-176
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• 2006

The study aims to evaluate the nutritional status and influence of school meal intakes on RDA of primary school children in Akure community, Ondo State, Nigeria. A cross-sectional study was conducted among 728 primary school children aged between 6 and 15 years. Data were collected using interviewer-administered semi-structured questionnaires. The questionnaires collect information on demographic characteristics and home dietary intake of the subjects. The heights and weights of the children were measured using a standard procedure and height-far-age and weight-far-height z-score were determined. The children's school meal intakes were weighed for 4 days and samples were collected for chemical analysis. The results showed that 37.8% of the children were not wasted, 35.7% mildly wasted, 18.7% moderately wasted and 7.8% severely wasted. Also, 57.8% were not stunted, 29.3% mildly stunted, 11.0% moderately stunted and 1.9% were severely stunted. The subjects' home dietary intakes showed that 73.6% ate starchy food only, 19.9% ate protein based food, while 11.6% and 11.5% consumed fruits/vegetables and snacks to complement home meals respectively. The chemical composition of school meal was energy 379 - 413kcal, moisture content 5.9 -7.3g, carbohydrate 56.5 - 69.4g, fat 4.6 - 12.7g, crude fiber 0.1 - 2.4g, ash content 3.6 - 8.5g and protein 14.9 - 22.3g. The mineral contents were calcium 45.9 - 59.2mg, sodium 5004 - 59.6mg, zinc 2.3 - 3.1mg, magnesium 55.0 - 61.6mg, potassium 55.3 - 69.3mg, copper 0.2 - 0.3 mg, while others 1.3 - 1.9mg, 243 - 659mg and 831 - 9,510mg were iron, phosphorous and vitamin-A respectively. The contribution of school meals to subjects' RDA was within 2.9% and 1540%. In summary, school meal intake contributed positively to the RDA and nutritional status of the school children.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.13 no.2
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• pp.89-99
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• 2001

In the present paper, Helmholtz resonator, which is widely used as a sound-amplification device, is applied to the development of seawater-exchanging breakwater. The incident waves can induce a large response in the resonator when incident wave frequency is close to one of natural modes of the resonator. Largely amplified potential energy due to the resonance supplies clean seawater into the harbor side throughout the channel. Flow supplied by the resonator circulates the seawater of harbor and helps to improve water quality. Within the framework of linear potential theory, matched asymptotic expansion method is employed to analyze the wave responses in a resonator. The semi-circular shape of the resonator has been chosen as an analytic model for mathematical simplicity. The wave responses of both single and arrays of Helmholtz resonator are investi¬gated. To validate an analytic solution, model test is conducted at 2-dimensional wave tanle Wave hcights in the resonator and velocity at the channel are measured for the state of valve-on and valve-off.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.40 no.3
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• pp.297-304
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• 2016

A numerical simulation has been performed for the penetration of a long-rod penetrator into a metal block (ceramic-tile-inserted 4340-steel plate). The impact velocity is 1.5km/s at a normal incidence angle. The first two validations are conducted for a semi-infinite block measuring the depth of penetration (DOP). The material model of ceramic is the JH-2 (Johnson-Holmquist) model. The predicted DOP values are in close agreement with the experimental data. Then, the primary simulation is performed by varying the position of the confined ceramic tile for three types of thickness of ceramic tile. The residual velocity, residual mass and residual kinetic energy of the long-rod are obtained from the simulation. Based on these predicted values, the trend of the ballistic performance of the protective structure is estimated. In addition, the mass efficiency is calculated in order to determine the performance of the ceramic-tile-inserted metal block. Finally, the optimum protective structure is identified.

• Transactions of the Korean Society of Mechanical Engineers
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• v.17 no.1
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• pp.120-130
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• 1993

Generally, the machinability of materials that have a good mechanical properties is poor. For materials having a high strength, high toughness, high strength in high temperature and wear resistance, it is difficult to remove a chip from work materials. These properties are well shown in a Nickel, so this metal is used in machine materials, semi-conductor industry, metal mold and optical fields etc. But it is limitted in use because of high cost and poor machinability. In this study, the cutting of pure Nickel was conducted to examine wear of CBN, poly crystal diamond (PCD) and single crystal diamond (SCD) tools. From the result, the CBN tool is superior to poly crystal diamond tools or single crystal diamond tools in terms of tool wear and tool wear is predictable from experimental data base.

• Journal of the Korean Society for Nondestructive Testing
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• v.19 no.6
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• pp.411-419
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• 1999

It has been well recognized that a long term service at elevated temperature of $350^{\circ}C{\sim}550^{\circ}C$ induces embrittlement damage due to carbide precipitation and/or P, Sb and Sn segregation at grain boundaries and thereby deteriorates the grain boundary strength of heat resisting components in the energy-related plants. Therefore, it is very important to assess quantitatively the extent of embrittlement damage of heat resisting components to secure the reliable and efficient service condition and to prevent brittle failure in service. However, because fracture tests are limited in size and number of specimen obtained from the structural components, nondestructive test method is required. In this study, the optimum electrochemical parameters are investigated and discussed to evaluate nondestructive embrittlement damage for aged 2.25Cr-1Mo steels by means of electrochemical polarization test method (ECPTM) in proper corrosive environment. In addition, the electrochemical test results are compared with embrittlement degree evaluated by semi-nondestructive SP test.

• Water for future
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• v.27 no.1
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• pp.123-131
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• 1994

A plunge pool is often employed as an energy-dissipating device at the end of a spillway or a pipe culvert. A jet from spillways or pipes frequently generates a scour hole which threatens the stability of the hydraulic structure. Existing scour prediction formulas of plunge pool of spillways or pipe culverts give a wide range of scour depths, and it is, therefore, difficult to accurately predict those scour depths. In this study, a new experimental method and new scour prediction formulas under submerged circular jet for large bed materials with shallow tailwater depths were developed. A major variale, which was not used in previous scour prediction equations, was the ratio of jet size to bed material size. In this study, jet momentum acting on a bed particle and jet diffustion theory were employed to derive scour prediction formulas. Four theoretical formulas were suggested for the two regions of jet diffusion, i.e., the region of flow establishment and the region of established flow. The semi-theoretically developed scour prediction formulas showed close agreement with laboratory experiments performed on a movable bed made of large spherical particles.