• Title/Summary/Keyword: semi-energy

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Developing a smart structure using integrated DDA/ISMP and semi-active variable stiffness device

  • Karami, Kaveh;Nagarajaiah, Satish;Amini, Fereidoun
    • Smart Structures and Systems
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    • v.18 no.5
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    • pp.955-982
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    • 2016
  • Recent studies integrating vibration control and structural health monitoring (SHM) use control devices and control algorithms to enable system identification and damage detection. In this study real-time SHM is used to enhance structural vibration control and reduce damage. A newly proposed control algorithm, including integrated real-time SHM and semi-active control strategy, is presented to mitigate both damage and seismic response of the main structure under strong seismic ground motion. The semi-active independently variable stiffness (SAIVS) device is used as semi-active control device in this investigation. The proper stiffness of SAIVS device is obtained using a new developed semi-active control algorithm based on real-time damage tracking of structure by damage detection algorithm based on identified system Markov parameters (DDA/ISMP) method. A three bay five story steel braced frame structure, which is equipped with one SAIVS device at each story, is employed to illustrate the efficiency of the proposed algorithm. The obtained results show that the proposed control algorithm could significantly decrease damage in most parts of the structure. Also, the dynamic response of the structure is effectively reduced by using the proposed control algorithm during four strong earthquakes. In comparison to passive on and off cases, the results demonstrate that the performance of the proposed control algorithm in decreasing both damage and dynamic responses of structure is significantly enhanced than the passive cases. Furthermore, from the energy consumption point of view the maximum and the cumulative control force in the proposed control algorithm is less than the passive-on case, considerably.

Growth and photocurrent study on the splitting of the valence band for ZnIn2S4 single crystal thin film by hot wall epitaxy (Hot Wall Epitaxy (HWE)법에 의한 ZnIn2S4 단결정 박막 성장과 가전자대 갈라짐에 대한 광전류 연구)

  • Hong, Kwang-Joon
    • Journal of Sensor Science and Technology
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    • v.16 no.6
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    • pp.419-427
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    • 2007
  • Single crystal $ZnIn_{2}S_{4}$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of $ZnIn_{2}S_{4}$ at $610^{\circ}C$ prepared from horizontal electric furnace. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $ZnIn_{2}S_{4}$ thin films measured with Hall effect by van der Pauw method are $8.51{\times}10^{17}\;electron/cm^{-3}$, $291{\;}cm^{2}/v-s$ at 293 K, respectively. The photocurrent and the absorption spectra of $ZnIn_{2}S_{4}$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. The temperature dependence of the energy band gap of the $ZnIn_{2}S_{4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=2.9514 eV. ($7.24{\times}10^{-4}\;eV/K$)$T^{2}$/(T+489 K). Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) for the valence band of the $ZnIn_{2}S_{4}$ have been estimated to be 167.8 meV and 14.8 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}$-, $B_{1}$-, and $C_{41}$-exciton peaks.

Spatial Correlation-based Resource Sharing in Cognitive Radio SWIPT Networks

  • Rong, Mei;Liang, Zhonghua
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.16 no.9
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    • pp.3172-3193
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    • 2022
  • Cognitive radio-simultaneous wireless information and power transfer (CR-SWIPT) has attracted much interest since it can improve both the spectrum and energy efficiency of wireless networks. This paper focuses on the resource sharing between a point-to-point primary system (PRS) and a multiuser multi-antenna cellular cognitive radio system (CRS) containing a large number of cognitive users (CUs). The resource sharing optimization problem is formulated by jointly scheduling CUs and adjusting the transmit power at the cognitive base station (CBS). The effect of accessing CUs' spatial channel correlation on the possible transmit power of the CBS is investigated. Accordingly, we provide a low-complexity suboptimal approach termed the semi-correlated semi-orthogonal user selection (SC-SOUS) algorithm to enhance the spectrum efficiency. In the proposed algorithm, CUs that are highly correlated to the information decoding primary receiver (IPR) and mutually near orthogonal are selected for simultaneous transmission to reduce the interference to the IPR and increase the sum rate of the CRS. We further develop a spatial correlation-based resource sharing (SC-RS) strategy to improve energy sharing performance. CUs nearly orthogonal to the energy harvesting primary receiver (EPR) are chosen as candidates for user selection. Therefore, the EPR can harvest more energy from the CBS so that the energy utilization of the network can improve. Besides, zero-forcing precoding and power control are adopted to eliminate interference within the CRS and meet the transmit power constraints. Simulation results and analysis show that, compared with the existing CU selection methods, the proposed low-complex strategy can enhance both the achievable sum rate of the CRS and the energy sharing capability of the network.

Energy flow finite element analysis of general Mindlin plate structures coupled at arbitrary angles

  • Park, Young-Ho
    • International Journal of Naval Architecture and Ocean Engineering
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    • v.11 no.1
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    • pp.435-447
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    • 2019
  • Energy Flow Finite Element Analysis (EFFEA) is a promising tool for predicting dynamic energetics of complicated structures at high frequencies. In this paper, the Energy Flow Finite Element (EFFE) formulation of complicated Mindlin plates was newly developed to improve the accuracy of prediction of the dynamic characteristics in the high frequency. Wave transmission analysis was performed for all waves in complicated Mindlin plates. Advanced Energy Flow Analysis System (AEFAS), an exclusive EFFEA software, was implemented using $MATLAB^{(R)}$. To verify the general power transfer relationship derived, wave transmission analysis of coupled semi-infinite Mindlin plates was performed. For numerical verification of EFFE formulation derived and EFFEA software developed, numerical analyses were performed for various cases where coupled Mindlin plates were excited by a harmonic point force. Energy flow finite element solutions for coupled Mindlin plates were compared with the energy flow solutions in the various conditions.

Photocurrent study on the splitting of the valence band and growth of $CdGa_2Se_4$ single crystal thin film by hot wall epitaxy (Hot Wall epitaxy(HWE)법에 의한 $CdGa_2Se_4$ 단결정 박막의 성장과 가전자대 갈라짐에 대한 광전류 연구)

  • Park, Chang-Sun;Hong, Kwang-Joon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.17 no.5
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    • pp.179-186
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    • 2007
  • Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy(HWE) system by evaporating the polycrystal source of $CdGa_2Se_4$ at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of single crystal $CdGa_2Se_4$ thin films measured with Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3},\;345cm^2/V{\cdot}s$ at 293 K, respectively. The photocurrent and the absorption spectra of $CdGa_2Se_4/SI$(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation $E_g(T)=2.6400eV-(7.721{\times}10^{-4}eV/K)T^2/(T+399K)$. Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) far the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-},\;B_{1^-},\;and\;C_{11}-exciton$ peaks.

A study on the Development of Energy-Saving Device "Crown Duct"

  • Lee, Kwi-Joo;An, Jung-Sun;Yang, Sun-Hee
    • Journal of Ocean Engineering and Technology
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    • v.26 no.5
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    • pp.1-4
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    • 2012
  • A energy saving device "Crown duct" has been developed and its efficiency gain has been verified experimentally in the towing tank of SSPA. The preswirl stator is well known as one of energy saving devices, which recovering the rotational energy of propeller slipstream. Crown duct has two functions of recovers the rotational energy by three blades on top of duct and of flow concentration by semi-duct. The model tests showed 4.4% efficiency gain with Crown Duct at full load condition and 6.9% at ballast condition compared with the bare hull ones for the middle class tanker.

Semi-Continuous Electrowinning of LiCl-$Li_2O$ Molten Salt (LiCl-$Li_2O$ 용융염에서의 리튬의 반연속적 전기정련)

  • Jin-Mok, Hur;Chung-Seok, Seo;Sun-Seok, Hong;Dae-Seung, Kang;Seong-Won, Park
    • Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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    • v.2 no.3
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    • pp.211-217
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    • 2004
  • A Li recovery technology has been developed and related experimental verification efforts were carried out to improve the economical viability and environmental friendliness of the 'Advanced Spent Fuel Conditioning Process' being developed at KAERI. This technology is characterized by the combination of 1) the electrolysis of $Li_2O$ in a molten salt by using a porous non-conducting magnesia container at the cathode, 2) the separation of the Li in the container from the molten salt by elevating the container above the level of a molten salt, 3) the transport of the Li in the container by using a vacuum siphon to a separated reservoir. Li was semi-continuously recovered from a LiCl-$Li_2O$ molten salt with a more than 95% yield by using the developed technology.

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Management of Base Stations having Cell Zooming Capability for Green Cellular Networks (그린 셀룰러 네트워크를 위한 Cell Zooming 가능을 가진 기지국들의 관리)

  • Jun, Kyung-Koo
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.36 no.8B
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    • pp.904-909
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    • 2011
  • Cell zooming adjusts the cell range of base stations depending on traffic condition. The cell zooming can be implemented by the adjustment of antenna angles, the clustering of the base stations, and the cell relay. The base stations can adjust the cell range in term of energy efficiency, which can then reduce the overall energy consumption of cellular networks. There is, however, a trade-off between the energy savings and the blocking probability of user calls. A periodic scheme that manages the cell zooming of the base stations was proposed but it was inadequate for dealing with the dynamic nature of traffic patterns. This paper proposes a semi-periodic cell zooming scheme along with the algorithms that select such base stations and define the operation procedure. Simulation results show that the proposed method outperforms the existing scheme in terms of the energy savings without the degradation of the blocking probability.

Photocurrent properties for $CdGa_2Se_4$ single crystal thin film grown by using hot wall epitaxy(HWE) method (Hot Wall Epitaxy(HWE)법에 의한 $CdGa_2Se_4$ 단결정 박막의 광전류 연구)

  • You, Sang-Ha;Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.124-125
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    • 2007
  • Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of $CdGa_2Se_4$ at $630^{\circ}C$ prepared from horizontal electric furnace. The photocurrent and the absorption spectra of $CdGa_2Se_4$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293K to 10K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$, obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 2.6400 eV - $(7.721{\times}10^{-4}\;eV/K)T^2$/(T + 399 K). Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy$({\Delta}cr)$ and the spin-orbit splitting energy$({\Delta}so)$ for the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-},\;B_{1^-},\;and\;C_{11^-}$ exciton peaks.

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