• Progress in Superconductivity
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• 제3권2호
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• pp.135-139
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• 2002

We have fabricated high-quality c-axis-oriented $MgB_2$ thin films by using a pulsed laser deposition technique. The thin films grown on (1 1 0 2) $Al_2$$O_3$ substrates show an onset transition temperature of 39.2 K with a sharp transition width of ~0.15 K. X-ray diffraction patterns indicate a c-axis-oriented crystal structure perpendicular to the substrate surface. We observed high critical current densities ($J_{c}$) of ~ 16 $MA/\textrm{cm}^2$ at 15 K and under self-field, which is comparable to or exceeds those of cuprate high-temperature superconductors. The extrapolation $J_{c}$ at 5 K was estimated to be ~ 40 MA/$\textrm{cm}^2$, which is the highest record for $MgB_2$ compounds. At a magnetic field of 5 T, the $J_{c}$ of~ 0.1 $MA/\textrm{cm}^2$ was detected at 15 K, suggesting that this compound is very promising candidate for the practical applications at high temperature with lower power consumption. As a possible explanation for the high current-carving capability, the vortex-glass phase will be discussed.d.d.d.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.222-222
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• 2011

Titanium dioxide (TiO2) has a number of applications in optics and electronics due to its superior properties, such as physical and chemical stability, high refractive index, good transmission in vis and NIR regions, and high dielectric constant. Atomic layer deposition (ALD), also called atomic layer epitaxy, can be regarded as a special modification of the chemical vapor deposition method. ALD is a pulsed method in which the reactant vapors are alternately supplied onto the substrate. During each pulse, the precursors chemisorb or react with the surface groups. When the process conditions are suitably chosen, the film growth proceeds by alternate saturative surface reactions and is thus self-limiting. This makes it possible to cover even complex shaped objects with a uniform film. It is also possible to control the film thickness accurately simply by controlling the number of pulsing cycles repeated. We have investigated the ALD of TiO2 at 100$^{\circ}C$ using precursors titanium tetra-isopropoxide (TTIP) and H2O on -O, -OH terminated Si surface by in situ X-ray photoemission spectroscopy. ALD reactions with TTIP were performed on the H2O-dosed Si substrate at 100$^{\circ}C$, where one cycle was completed. The number of ALD cycles was increased by repeated deposition of H2O and TTIP at 100$^{\circ}C$. After precursor exposure, the samples were transferred under vacuum from the reaction chamber to the UHV chamber at room temperature for in situ XPS analysis. The XPS instrument included a hemispherical analyzer (ALPHA 110) and a monochromatic X-ray source generated by exciting Al K${\alpha}$ radiation (h${\nu}$=1486.6 eV).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.409-409
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• 2011

All solid-state thin film lithium batteries have many applications in miniaturized devices because of lightweight, long-life, low self-discharge and high energy density. The research of cathode materials for thin film lithium batteries that provide high energy density at fast discharge rates is important to meet the demands for high-power applications. Among cathode materials, lithium manganese oxide materials as spinel-based compounds have been reported to possess specific advantages of high electrochemical potential, high abundant, low cost, and low toxicity. However, the lithium manganese oxide has problem of capacity fade which caused by dissolution of Mn ions during intercalation reaction and phase instability. For this problem, many studies on effect of various transition metals have been reported. In the preliminary study, the Sn-substituted LiMn2O4 thin films prepared by pulsed laser deposition have shown the improvement in discharge capacity and cycleability. In this study, the thin films of LiMn2O4 and LiSn0.0125Mn1.975O4 prepared by RF magnetron sputtering were studied with effect of deposition parameters on the phase, surface morphology and electrochemical property. And, all solid-state thin film batteries comprised of a lithium anode, lithium phosphorus oxy-nitride (LiPON) solid electrolyte and LiMn2O4-based cathode were fabricated, and the electrochemical property was investigated.

• Journal of Medicine and Life Science
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• 제18권2호
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• pp.25-30
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• 2021

Many people reported suspected food poisoning after consuming food at the same snack bar on June 18, 2020. Thus, an in-depth epidemiological investigation was conducted to identify the infectious agent and establish additional food poisoning prevention measures. The study included people who reported to the local public health center after June 18 with acute gastroenteritis symptoms within 4 days of consuming food from the snack bar. The onset of symptoms and food items consumed by individuals were then investigated via phone calls and on-site visits. Afterward, the infectious agent was identified from human samples (stool or rectal swab) of four restaurant employees and 89 people and from environmental samples (materials, cooking utensils, and water). The analysis revealed that the incubation period ranged from 2 hours to 92 hours, with a median and mode of 16 hours and 12 hours, respectively. Moreover, the epidemic curve had a unimodal shape because of common exposure, which reached its peak on June 18. After monitoring for 8 days, which is more than twice the maximum incubation period of 92 hours, the end of the epidemic was declared on June 28 as no additional cases were reported. Analysis of human and environmental samples revealed Salmonella bareilly of the pulsed-field gel electrophoresis pulsotype SAPX01.017 as the causative agent. Therefore, it was concluded that the food poisoning outbreak was caused by S. bareilly.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2002년도 학술대회 논문집
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• pp.340-340
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• 2002

In an effort to develop alternative single buffer layer technology for YBa$_2$Cu$_3$O$_{7-{\delta}}$ (YBCO) coated conductors, we have investigated both LaMnO$_3$, (LMO) and La$_2$Zr$_2$O$_{7}$ (LZO) as potential buffer layers. High-quality LMO films were grown directly on textured Ni and Ni-W (3%) substrates using rf magnetron sputtering. Highly textured LZO buffers were grown on textured Ni substrates using sol-gel alkoxide processing route. YBCO films were then grown on both LMO and LZO buffers using pulsed laser deposition. Detailed X-ray studies have shown that YBCO films were grown on both LMO and LZO layers with a single epitaxial orientation. A high J$_{c}$ of over 1 MA/cm$^2$ at 77 K and self-field was obtained on YBCO films grown on both LMO-buffered Ni or Ni-W substrates, and also on LZO-buffered Ni substrates. We have identified LaMnO$_3$ as a good diffusion barrier layer for Ni and it also provides a good template for growing high current density YBCO films. Similarly we have also demonstrated the growth of high J$_{c}$ YBCO films on all solution buffers. We will discuss in detail about our buffer deposition processes. processes.s.s.s.s.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2002년도 Proceedings of the International Welding/Joining Conference-Korea
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• pp.612-619
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• 2002

The dynamic behavior of Al-Mg alloys plasma was very unstable and this instability was closely related to the unstable motion of keyhole during laser irradiation. The keyhole fluctuated both in size and shape and its fluctuation period was about 440 ${\mu}{\textrm}{m}$. This instability has been estimated to be caused by the evaporation phenomena of metals with different boiling point and latent heats of vaporization. Therefore, the authors have conducted the spectroscopic diagnostics of plasma induced in the pulsed YAG laser welding of Al-Mg alloys in air and argon atmospheres. In the air environment, the identified spectra were atomic lines of Al, Mg, Cr, Mn, Cu, Fe and Zn, and singly ionized Mg line, as well as strong molecular spectrum of AlO, MgO and AIH. It was confirmed that the resonant lines of Al and Mg were strongly self-absorbed, in particular in the vicinity of pool surface. The self-absorption of atomic Mg line was more eminent in alloys containing higher Mg. These facts showed that the laser-induced plasma was relatively a low temperature and high density metallic vapor. The intensities of molecular spectra of AlO and MgO were different each other depending on the power density of laser beam. Under the low power density irradiation condition, the MgO band spectra were predominant in intensity, while the AlO spectra became much stronger in higher power density. In argon atmosphere the band spectra of MgO and AlO completely vanished, but AlH molecular spectra was detected clearly. The hydrogen source was presumably the hydrogen solved in the base Metal, absorbed water on the surface oxide layer or H$_2$ and $H_2O$ in the shielding gas. The temporal change in spectral line intensities was quite similar to the fluctuation of keyhole. The time average plasma temperature at 1 mm high above the surface of A5083 alloy was determined by the Boltzmann plot method of atomic Cr lines of different excitation energy. The obtained electron temperature was 3, 280$\pm$150 K which was about 500 K higher than the boiling point of pure aluminum. The electron number density was determined by measuring the relative intensities of the spectra1lines of atomic and singly ionized Magnesium, and the obtained value was 1.85 x 1019 1/㎥.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.180-180
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• 2012

Heteroepitaxial GaN nano- and micro-rods (NMRs) are one of the most promising structures for high performance optoelectronic devices such as light emitting diodes, lasers, solar cells integrated with Si-based electric circuits due to their low dislocation density and high surface to volume ratio. However, heteroepitaxial GaN NMRs growth using a metal-organic vapor phase epitaxy (MOVPE) machine is not easy due to their long surface diffusion length at high growth temperature of MOVPE above $1000^{\circ}C$. Recently some research groups reported the fabrication of the heteroepitaxial GaN NMRs by using MOVPE with vapor-liquid-solid (VLS) technique assisted by metal catalyst. However, in the case of the VLS technique, metal catalysts may act as impurities, and the GaN NMRs produced in this mathod have poor directionallity. We have successfully grown the vertically well aligned GaN NMRs on Si (111) substrate by means of self-catalystic growth methods with pulsed-flow injection of precursors. To grow the GaN NMRs with high aspect ratio, we veried the growth conditions such as the growth temperature, reactor pressure, and V/III molar ratio. We confirmed that the surface morphology of GaN was strongly influenced by the surface diffusion of Ga and N adatoms related to the surrounding environment during growth, and we carried out theoretical studies about the relation between the reactor pressure and the growth rate of GaN NMRs. From these results, we successfully explained the growth mechanism of catalyst-free and mask-free heteroepitaxial GaN NMRs on Si (111) substrates. Detailed experimental results will be discussed.

• 한국조명전기설비학회지:조명전기설비
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• 제9권2호
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• pp.58-67
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• 1995

본 논문은 유도전동기의 운전조작시에 발생되는 자계변화특성에 대하여 기술하였다. 본 측정시스템은 자기적분형 자계센서, 증폭기, 능동형 적분기로 이루어졌으며, 교정실험에 대한 측정계의 주파수대역과 감도는 각각 20[Hz]~0.234[mV/$\mu$T]이다. 유도전동기의 기동과 정상운전중에 발생하는 자계성분을 측정하였으며, 고조파 성분을 고속 푸리에 변환기법으로 분석하였다. 유도전동기의 직입기동시에는 단일성 펄스자계가 강하게 발생하였으며, 이의 피크치는 정상상태의 값보다 5배이상 크게 나타났다. 이러한 긴 과도시간과 강한 자계의 세기는 전동기의 큰 인덕턴스와 동특성에 기인된다. 유도전동기의 정상운전시에는 유도전동기의 극수에 의존하는 기본파에 대한 분조파의 자계성분이 관측되었다. 또한, 자계의 분조파 성분은 전동기의 토크 변동으로 불균일한 회전토크로 인해 생기는 맥동전류와 전압플리커에 의해서 발생하는 것으로 생각된다. 인버터구동형 유도전동기에서는 직입기동에 비하여 많은 고조파 성분이 발생되고 있었으며, 특히 전동기의 구동주파수가 낮을수록 맥동토크에 의한 전류변화로 고조파 성분은 더욱 증가하였다.

• 한국진공학회지
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• 제16권6호
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• pp.483-488
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• 2007

KSTAR (Korea Superconducting Tokamak Advanced Research) 전류전송계 (Current Feeder System)는 4.5 K의 저온에서 운전되는 초전도자석과 300 K의 실온에서 운전되는 전원장치 (Magnet Power Supply)를 전기적으로 연결하는 장치이다. 전류전송계는 최대 35 kA의 DC 전류가 인가되는 TF 자석용 및 350초간 20$\sim$26 ㎄의펄스 전류가 인가되는 PF 자석용으로 분리되어 있으며 리드박스 내부는 전류인입선, 초전도버스라인, 열차폐체 및 냉각라인 등이 설치되어 있다. 리드박스와 초전도버스라인 진공덕트는 KSTAR 주장치와는 별도로 진공배기 시스템이 구축되어있으며, 전체적으로 아령 형상을 하고 있는 진공공간을 효율적으로 진공배기하기 위하여 버스라인 덕트와 주장치 저온용기 사이에 진공 분리막 (Vacuum Separator)이 설치되어 있다. 진공배기를 위한 초벌배기계는 로터리펌프 및 부스터펌프 (Mechanical Booster Pump)로 구축되었으며 고진공 배기계는 4대의 크라이오펌프 (Cryo-pump)로 구축되었다. 진공장치 운전을 위해 PLC 기반의 로컬 제어시스템을 구축하였고 장치 안전을 위한 자체 인터록과 중앙인터록 시스템 및 중앙제어연계시스템이 함께 구축되어 있다. 전류전송계 설치완료 후 진공배기 시운전을 통해 배기시스템의 자가진단 및 리드박스 내부에 설치되어 있는 헬륨배관의 진공누설검사를 완료하였으며, 액체질소를 사용하여 전류인입선 냉각시험을 완료하였다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 춘계학술대회 논문집
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• pp.111-112
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• 2009

Diamond-like carbon (DLC) is a convenient term to indicate the compositions of the various forms of amorphous carbon (a-C), tetrahedral amorphous carbon (ta-C), hydrogenated amorphous carbon and tetrahedral amorphous carbon (a-C:H and ta-C:H). The a-C film with disordered graphitic ordering, such as soot, chars, glassy carbon, and evaporated a-C, is shown in the lower left hand corner. If the fraction of sp3 bonding reaches a high degree, such an a-C is denoted as tetrahedral amorphous carbon (ta-C), in order to distinguish it from sp2 a-C [2]. Two hydrocarbon polymers, that is, polyethylene (CH2)n and polyacetylene (CH)n, define the limits of the triangle in the right hand corner beyond which interconnecting C-C networks do not form, and only strait-chain molecules are formed. The DLC films, i.e. a-C, ta-C, a-C:H and ta-C:H, have some extreme properties similar to diamond, such as hardness, elastic modulus and chemical inertness. These films are great advantages for many applications. One of the most important applications of the carbon-based films is the coating for magnetic hard disk recording. The second successful application is wear protective and antireflective films for IR windows. The third application is wear protection of bearings and sliding friction parts. The fourth is precision gages for the automotive industry. Recently, exciting ongoing study [1] tries to deposit a carbon-based protective film on engine parts (e.g. engine cylinders and pistons) taking into account not only low friction and wear, but also self lubricating properties. Reduction of the oil consumption is expected. Currently, for an additional application field, the carbon-based films are extensively studied as excellent candidates for biocompatible films on biomedical implants. The carbon-based films consist of carbon, hydrogen and nitrogen, which are biologically harmless as well as the main elements of human body. Some in vitro and limited in vivo studies on the biological effects of carbon-based films have been studied [$2{\sim}5$].The carbon-based films have great potentials in many fields. However, a few technological issues for carbon-based film are still needed to be studied to improve the applicability. Aisenberg and Chabot [3] firstly prepared an amorphous carbon film on substrates remained at room temperature using a beam of carbon ions produced using argon plasma. Spencer et al. [4] had subsequently developed this field. Many deposition techniques for DLC films have been developed to increase the fraction of sp3 bonding in the films. The a-C films have been prepared by a variety of deposition methods such as ion plating, DC or RF sputtering, RF or DC plasma enhanced chemical vapor deposition (PECVD), electron cyclotron resonance chemical vapor deposition (ECR-CVD), ion implantation, ablation, pulsed laser deposition and cathodic arc deposition, from a variety of carbon target or gaseous sources materials [5]. Sputtering is the most common deposition method for a-C film. Deposited films by these plasma methods, such as plasma enhanced chemical vapor deposition (PECVD) [6], are ranged into the interior of the triangle. Application fields of DLC films investigated from papers. Many papers purposed to apply for tribology due to the carbon-based films of low friction and wear resistance. Figure 1 shows the percentage of DLC research interest for application field. The biggest portion is tribology field. It is occupied 57%. Second, biomedical field hold 14%. Nowadays, biomedical field is took notice in many countries and significantly increased the research papers. DLC films actually applied to many industries in 2005 as shown figure 2. The most applied fields are mold and machinery industries. It took over 50%. The automobile industry is more and more increase application parts. In the near future, automobile industry is expected a big market for DLC coating. Figure 1 Research interests of carbon-based filmsFigure 2 Demand ratio of DLC coating for industry in 2005. In this presentation, I will introduce a trend of carbon-based coating research and applications.