• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.11
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• pp.745-750
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• 2017

Terahertz time-domain spectroscopy has been used to study the optical properties of $Pr^{3+}-doped$ selenide glasses. The complex refractive indexes of $Pr^{3+}-selenide$ glasses were measured in a frequency range from 0.3 to 1.5 THz. The real and imaginary refractive indexes increased with increasing frequency and $Pr^{3+}$ ion concentration. The obtained result indicated that the phonon modes of the $Pr^{3+}-doped$ selenide glasses shift to lower frequencies with the concentration of $Pr^{3+}$ ions. The theory of far-infrared absorption in amorphous materials was used to analyze the results. The measured data showed that the disorder-induced terahertz absorption increased with increasing $Pr^{3+}$ ion concentration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.382-385
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• 2009

In this study, we studied switching characteristics of germanium selenide(Ge-Se)/silver(Ag) contact formed by photodoping for use in programmable metallization cell devices. We have been investigated the switching characteristics of Ag-doped chalcogenide thin films. Changed resistance range by direction of applied voltage is about $1\;M{\Omega}$ $\sim$ hundreds of $\Omega$. The cause of these resistance change can be thought the same phenomenon such as resistance variation of PMC-RAM. The results imply that the separated Ag-ions react the atoms or defects in chalcogenide thin films.

• Nuclear Engineering and Technology
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• v.44 no.8
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• pp.945-952
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• 2012

The sorption of selenium ions onto iron and iron compounds as a disposal container material and its corrosion products, and onto bentonite as a buffer material, was studied to understand the behaviors of selenium in a waste repository. Selenite was sorbed onto commercial magnetite very well in solutions at around pH 9, but silicate hindered their sorption onto both magnetite and ferrite. Unlike commercial magnetite and ferrite, flesh synthesized magnetite, green rust and iron greatly decreased selenium concentration even in a silicate solution. These results might be due to the formation of precipitates, or the sorption of selenide or selenite onto an iron surface at below Eh= -0.2 V. Red-colored Se(cr) was observed on the surface of a reaction bottle containing iron powder added into a selenite solution. Silicate influences on the sorption onto magnetite and iron for selenide are the same as those for selenite. Even though bentonite adsorbed a slight amount of selenite, the sorption cannot be ignored in the waste repository since a very large quantity of bentonite is used.

• Korean Journal of Optics and Photonics
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• v.14 no.6
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• pp.594-599
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• 2003

By using the spectroscopic ellipsometry, we have measured and analyzed the optical characteristics of P $r^3$$^{+}$-doped selenide glasses of Ge-Sb-Se system, a strong candidate material for U band fiber amplifiers. The ellipsometric spectra measured in the transparent wavelengths range of the material were all fitted to a model consisting of ambient/roughness/thin fil $m_strate structures to obtain simultaneously the optical properties such as refractive index, in terms of Sellmeier parameters and film structure of P $r^3$$^{+}$-doped selenide glasses. Repeated measurements on different positions in both polished faces rendered to verify positional dependence of measured spectre-ellipsometric data. Hence, the model made possible the analysis of the optical characteristics of the glasses. Even though surface roughness was mainly responsible for the position dependencies, the averaged refractive indexes were as precise as to reflect the minute compositional change tantamount to 1 mol%. The measured refractive indexes are useful for design of core and clad compositions of single-mode selenide optical fibers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.86-87
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• 2008

In this study, we studied the nature of thin films formed by photodoping chalcogenide materials with for use in programmable metallization cell devices, a type of ReRAM. We investigated the resistance of Ag-doped chalcogenide thin films varied in the applied voltage bias direction from about 1 M$\Omega$ to several hundreds of $\Omega$. As a result of these resistance change effects, it was found that these effects agreed with PMC-RAM. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from the chalcogenide materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.304.2-304.2
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• 2014

Chalcogenides (Te,Se) and pnictogens(Bi,Sb) materials have been widely investigated as thermoelectric materials. Especially, Bi2Te3 (Bismuth telluride) compound thermoelectric materials in thin film and nanowires are known to have the highest thermoelectric figure of merit ZT at room temperature. Currently, the thermoelectric material research is mostly driven in two directions: (1) enhancing the Seebeck coefficient, electrical conductivity using quantum confinement effects and (2) decreasing thermal conductivity using phonon scattering effect. Herein we demonstrated influence of annealing temperature on structural and thermoelectrical properties of Bismuth-telluride-selenide ternary compound thin film. Te-rich Bismuth-telluride-selenide ternary compound thin film prepared co-deposited by thermal evaporation techniques. After annealing treatment, co-deposited thin film was transformed amorphous phase to Bi2Te3-Bi2Te2Se1 polycrystalline thin film. In the experiment, to investigate the structural and thermoelectric characteristics of Bi2Te3-i2Te2Se1 films, we measured Rutherford Backscattering spectrometry (RBS), X-ray diffraction (XRD), Raman spectroscopy, Scanning eletron microscopy (SEM), Transmission electron microscopy (TEM), Seebeck coefficient measurement and Hall measurement. After annealing treatment, electrical conductivity and Seebeck coefficient was increased by defect states dominated by selenium vacant sites. These charged selenium vacancies behave as electron donors, resulting in carrier concentration was increased. Moreover, Thermal conductivity was significantly decreased because phonon scattering was enhanced through the grain boundary in Bi2Te3-Bi2Te2Se1 polycrystalline compound. As a result, The enhancement of thermoelectric figure-of-merit could be obtained by optimal annealing treatment.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.21 no.1
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• pp.133-143
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• 1997

Piezoelastic materials have recently attracted considerable attention because of their potential use in intelligent structural systems. In this paper, we treat a transient piezothermoelastic problem in a hexagonal plate of crystal class 6mm subjected to antisymmetric heating temperature. We analyze this problem by use of the potential function method. Numerical calculations are carried out for a cadmium selenide solid, and the results are presented graphically in comparison with those derived from the similar problem in a cadmium selenide plate subjected to symmetric heating temperature for a symmetry transient problem.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.4
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• pp.187-198
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• 2003

Zinc selenide (ZnSe) single crystals hold promise for many electro-optics, acousto-optic and green laser generation applications. This material is prepared in closed ampoules by the physical vapor transport (PVT) growth method based on the dissociative sublimation. We investigate the effects of diffusive-convection on the crystal growth rate of ZnSe with a low vapor pressure system in a horizontal configuration. Our results show that for the ratios of partial pressures, s=0.2 and 2.9, the growth rate increases with the Peclet number and the temperature differences between the source and crystal. As the ratio of partial pressures approaches the stoichiometric value of 2, the rate increases. The mass fluk based on one dimensional (1D model) flow for low vapor pressure system fall within the range of the predictions (2D model) obtained by solving the coupled set of conservation equations, which indicates the flow fields would be advective-diffusive. Therefore, the rate and the flow fields are independent of gravity acceleration levels.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.319-320
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• 2007

We researched basic study about electrical characteristics of Zinc Selenide (Faraday Cell), which is known for various temperature of good-performance, that applied measuring current or protecting instrument by Optical Current Transducer, on Gas Insulated Switchgear. Measuring System consists of VCSEL produced 850nm IR Laser, Pin Photo Diode made of GaAs surveyed as Optical Power Meter, and Optical Fibers specified Multi-mode. We observed optical output changes during measurement of currents increasing by 100[A] in range from 0[A] to 1,000[A] and set temperature condition increasing by $5[^{\circ}C]$ in a range from $30[^{\circ}C]\;to\;60[^{\circ}C]$.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.183-189
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• 2013

$Cu_2ZnSn(S,Se)_4$ material is receiving an increased amount of attention for solar cell applications as an absorber layer because it consists of inexpensive and abundant materials (Zn and Sn) instead of the expensive and rare materials (In and Ga) in $Cu(In,Ga)Se_2$ solar cells. We were able to achieve a cell conversion efficiency to 4.7% by the selenization of a stacked metal precursor with the Cu/(Zn + Sn)/Mo/glass structure. However, the selenization of the metal precursor results in large voids at the absorber/Mo interface because metals diffuse out through the top CZTSe layer. To avoid the voids at the absorber/Mo interface, binary selenide compounds of ZnSe and $SnSe_2$ were employed as a precursor instead of Zn and Sn metals. It was found that the precursor with Cu/$SnSe_2$/ZnSe stack provided a uniform film with larger grains compared to that with $Cu_2Se/SnSe_2$/ZnSe stack. Also, voids were not observed at the $Cu_2ZnSnSe_4$/Mo interface. A severe loss of Sn was observed after a high-temperature annealing process, suggesting that selenization in this case should be performed in a closed system with a uniform temperature in a $SnSe_2$ environment. However, in the experiments, Cu top-layer stack had more of an effect on reducing Sn loss compared to $Cu_2Se$ top-layer stack.