• Korean Journal of Materials Research
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• v.15 no.2
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• pp.89-92
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• 2005

The induction melting was employed to prepare Nb-doped $CoSb_3$ skutterudites and their thermoelectric properties were investigated. Single phase $\delta-CoSb_3$ was successfully obtained by induction melting and subsequent annealing at $400^{\circ}C$ for 2 hrs in vacuum. The positive signs of Seebeck coefficients for all the specimens revealed that Nb atoms acted as p-type dopants by substituting Co atoms. Electrical conductivity decreased and then increased with increasing temperature, indicating mixed conduction behavior. Electrical conductivity increased by Nb doping, and it was saturated at high temperature. Maximum value of the thermoelectric power factor was shifted to higher temperature with increasing the amount of Nb doping, mainly originated from the high Seebeck coefficient around mixed conduction temperature and high electrical conductivity.

• Korean Journal of Materials Research
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• v.8 no.3
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• pp.245-251
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• 1998

Bi-doped n-type PbTe thermoeletric materials were fabricated by mechanical alloying and hot pressing. The intering characteristics and thermoelectric properties of the hot- pressed PbTe were characterized and compared with the properties of the specimens prepared by meltingigrinding method. The hot-pressed PbTe specimens fabricated by mechanical alloying exhibited more negative Seebeck coefficient, higher electrical resistivity and lower thermal conductivity. compared to ones prepared by meltingigrinding. The maximum figure-of-merit increased and the temperature for the maximum figure-of-merit shifted to lower temperature for the specimens fabricated by mechanical alloying. When hot pressed at $650^{\circ}C$, 0.3 wt% Bi-doped PbTe fabricated by mechanical alloying and meltingjgrinding exhibited maximum figure-of-merits of $1.33\times10^{-3}/K$ at $200^{\circ}C$ and $1.07\times10^{-3}/K$ at $400^{\circ}C$ respectively.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.69-76
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• 1997

P-type ($Bi_{0.5}Sb_{1.5}Te_3$) and n-type ($Bi_2Te_{2.4} Se_{0.6}$) thermoelectric thin film were deposited on glass and Teflon substrates by the flash evaporation technique. The changes in thermoelectric properties, such as Seebeck coefficient, electrical conductivity, carrier concentration, carrier mobility, thermal conductivity, and figure of merit, were investigated as a function of film thickness and annealing condition. Figures of merit of the thin films annealed at 473 K for 1 hour were improved to be $1.3{\times}10^{-3}K^{-1}$ for p-type and $0.3{\times}10^{-3}K^{-1}$ for n-type, and they were almost independent of film thickness. Temperature sensors were fabricated from the thin films having the above mentioned properties. And thermo-emf, sensitivity, and time constant of the sensors were measured to evaluate their characteristics for temperature sensors. Thin film sensors deposited on Teflon substrates showed better performance than those on glass substrates, and their sensitivity and time constant were 2.91 V/W and 28.2 sec respectively for the sensor of leg width 1 mm$\times$length 16 mm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.340-344
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• 2011

Thermoelectric bismuth telluride ($Bi_2Te_3$) films were deposited on $4^{\circ}$ off oriented (001) GaAs substrates using a modified metal organic chemical vapor deposition (MOCVD) system. The effects of substrate temperature on surface morphologies, crystallinity, electrical properties and thermoelctric properties were investigated. Two dimensional growth mode (2D) was observed at substrate temperature lower than $400^{\circ}C$. However, three dimensional growth mode (3D) was observed at substrate temperature higher than $400^{\circ}C$. Change of growth mechanism from 2D to 3D was confirmed with environmental scanning electron microscope (E-SEM) and X-ray diffraction analysis. Seebeck coefficients of all samples have negative values. This result indicates that $Bi_2Te_3$ films grown by modified MOCVD are n-type. The maximum value of Seebeck coefficient was -225 ${\mu}V/K$ and the power factor was $1.86{\times}10^{-3}\;W/mK^2$ at the substrate temperature of $400^{\circ}C$. $Bi_2Te_3$ films deposited using modified MOCVD can be used to fabricate high-performance thermoelectric devices.

• Journal of the Korean institute of surface engineering
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• v.49 no.1
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• pp.40-45
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• 2016

Recently, $Bi_2Te_3$-based alloys are the best thermoelectric materials near to room temperature, so it has been researched to achieve increased figure of merit(ZT). Ternary compounds such as Bi-Te-Se and Bi-Sb-Te have higher thermoelectric property than binary compound Bi-Te and Sb-Te, respectively. Compared to DC plating method, pulsed electrodeposition is able to control parameters including average current density, and on/off pulse time etc. Thereby the morphology and properties of the films can be improved. In this study, we electrodeposited n-type ternary Cu-doped $Bi_2(Te-Se)_3$ thin film by modified pulse technique at room temperature. To further enhance thermoelectric properties of $Bi_2(Te-Se)_3$ thin film, we optimized Cu doping concentration in $Bi_2(Te-Se)_3$ thin film and correlated it to electrical and thermoelectric properties. Thus, the crystal, electrical, and thermoelectric properties of electrodeposited $Bi_2(Te-Se)_3$ thin film were characterized the XRD, SEM, EDS, Seebeck measurement, and Hall effect measurement, respectively. As a result, the thermoelectric properties of Cu-doped $Bi_2(Te-Se)_3$ thin films were observed that the Seebeck coefficient is $-101.2{\mu}V/K$ and the power factor is $1412.6{\mu}W/mK^2$ at 10 mg of Cu weight. The power factor of Cu-doped $Bi_2(Te-Se)_3$ thin film is 1.4 times higher than undoped $Bi_2(Te-Se)_3$ thin film.

• Journal of the Korean Electrochemical Society
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• v.22 no.3
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• pp.79-86
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• 2019

Most of low-grad heat (< $200^{\circ}C$) generated from industrial process and human body, is abandoned as waste heat. To harvest the waste heat, the thermoelectrics (TE) technology has been widely investigated so far. However, TE suffers from poor performance and high material cost. As an alternative to the TE device, the thermoelectrical cell (TEC) is gaining growing attention these days. The TEC features several advantages such as high Seebeck coefficient, low cost and design flexibility compared to TE, but its commercial viability was limited by its low heat-to-electricity conversion efficiency. However, recent reports have demonstrated that the performance of TEC can be markedly improved by employing novel electrode/electrolyte materials and by optimizing cell design. This article summarizes the recent progress of TECs in terms of the redox couples, electrolyte solvents and additives, electrode materials and cell design.

• Journal of Convergence for Information Technology
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• v.11 no.2
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• pp.90-97
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• 2021

In this study, a Bi2Te3 thermoelectric generator (TEG) was fabricated to convert unused thermal energy into useful electrical energy. For the performance test, a dedicated experiment device consisting of a heating block operating with cartridge heaters and a cooling block through which a refrigerant flows was constructed. A 3×3 array of thermocouples was mounted on the heating block and the cooling block, respectively, to derive the temperature fields and heat transfer rate onto both sides of the TEG. Experiments were conducted for a total of 9 temperature differences, obtaining V-I and P-R curves. The results of 7 variables including Seebeck coefficients that have a major effect on performance were presented as a function of the temperature difference. The feasibility of the energy recovery performance of the developed TEG was verified from the maximum power output of 7.5W and conversion efficiency of 11.3%.

• Applied Microscopy
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• v.47 no.3
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• pp.105-109
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• 2017

The effect of temperature and vanadium metal concentration on the electronic and thermoelectric properties of Si in the diamond cubic structure has been investigated using a combination of density functional theory simulations and the semi classical Boltzmann's theory. The BotzTrap code within the constant relaxation time approximation has been used to obtain the Seebeck coefficient and other transport properties of interest for alloys of the structure $Si_{1-x}V_x$, where x is 0, 0.125, 0.25, 0.375, and 0.5. The thermoelectric properties have been extracted for a temperature range of 300 K to 1,000 K. The general trend with V atom substitution for Si causes the Seeback coefficient to increase and the thermal conductivity to decrease for the various alloys. The optimum values are for $Si_5V_3$ and $Si_4V_4$ alloys for charge carrier concentrations of $10^{21}cm^{-3}$ in the mid temperature range of 500~800 K. This is a very desirable effect for a promising thermoelectric and the figure of merit ZT approaches 0.2 at 600 K for the p-type $Si_5V_3$ alloy.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.9
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• pp.37-45
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• 1999

For the purpose of reducing the output voltage fluctuation of thin film multijunction thermal converter, EVANOHM alloy-S and chromel-alumel thermocouple were used as a thin film heater material and as a thermoelement of thrmopile, respectively. The temperature coefficient of the resistance of thin film EVANOHM alloy-S heater was about $1.4 {\times} 10^4/^{\circ}C$, which is very small compared to other materials, and thin film chromel-alumel thermocouple showed relatively small difference of the Seebeck coefficients about $38 {\mu}V/K$. The output voltage fluctuation of the thermal converter was about 0.06% for the initial 120 seconds in air and decreased considerably after preheating for 5 minutes or more. The respective AC-DC voltage and current transfer error ranges of the thermal converter were about ${\pm}$1.6 ppm and ${\pm}$0.7 ppm in the frequency range from 10Hz to 10 kHz and increased remarkably below 10 Hz or above 10 kHz.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.162-163
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• 2013

Single-crystal InGaZnO (IGZO) thin films were spontaneously formed as periodic layered structure along the c-axis by thermal treatment at high temperature. when the IGZO superlattice were synthesized by sol-gel method, the effects of preferred growth orientations and the flatness of ZnO buffer layer were investigated. $InGaO_3(ZnO)_2$ superlattice were favorably formed on ZnO buffer layer with single preferred orientation. Futhermore, it showed relatively high Seebeck coefficient and power factor.