• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1114-1115
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• 2006

The preparation of single-phase $CuLaO_2$ with delafossite-type structure by means of the solid-state reaction method was investigated using X-ray diffraction. The results showed that notwhistanding the fact that there was a trace of metallic copper, nearly single-phase $CuLaO_2$ was obtained by using $La(OH)_3$ as a lanthanum source and by firing the mixed powder with nonstoichiometric composition ratio of $La(OH)_3:Cu_2O=1:1.425$ in a vacuum at 1273 K for 10 h. The measurement of electrical conductivity and Seebeck coefficient showed that $CuLaO_2$ thus obtained was a p-type semiconductor and had a Seebeck coefficient of approximately $70{\mu}V/K$.

• Journal of Ceramic Processing Research
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• 제20권6호
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• pp.582-588
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• 2019

FeVSb1-xTex (0.02 ≤ x ≤ 0.10) half-Heusler alloys were fabricated by mechanical alloying process and subsequent vacuum hot pressing. Near single half-Heusler phases are formed in vacuum hot pressed samples but a second phase of FeSb2 couldn't be avoided. After doping, the lattice thermal conductivity in the system was shown to decrease with increasing Te concentration and with increasing temperature. The lowest thermal conductivity was achieved for FeVSb0.94Te0.06 sample at about 657 K. This considerable reduction of thermal conductivities is attributed to the increased phonon scattering enhanced by defect structure, which is formed by doping of Te at Sb site. The phonon scattering might also increase at grain boundaries due to the formation of fine grain structure. The Seebeck coefficient increased considerably as well, consequently optimizing the thermoelectric figure of merit to a peak value of ~0.24 for FeVSb0.94Te0.06. Thermoelectric properties of various Te concentrations were investigated in the temperature range of around 300~973 K.

• 한국재료학회지
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• 제32권6호
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• pp.287-292
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• 2022

Magnesium-antimonide is a well-known zintl phase thermoelectric material with low band gap energy, earth-abundance and characteristic electron-crystal phonon-glass properties. The nominal composition Mg_3.8-xZn_xSb₂ (0.00 ≤ x ≤ 0.02) was synthesized by controlled melting and subsequent vacuum hot pressing method. To investigate phase development and surface morphology during the process, X-ray diffraction (XRD) and scanning electron microscopy (SEM) were carried out. It should be noted that an additional 16 at. % Mg must be added to the system to compensate for Mg loss during the melting process. This study evaluated the thermoelectric properties of the material in terms of Seebeck coefficient, electrical conductivity and thermal conductivity from the low to high temperature regime. The results demonstrated that substituting Zn at Mg sites increased electrical conductivity without significantly affecting the Seebeck coefficient. The maximal dimensionless figure of merit achieved was 0.30 for x = 0.01 at 855 K which is 30% greater than the intrinsic value. Electronic flow properties were also evaluated and discussed to explain the carrier transport mechanism involved in the thermoelectric properties of this alloy system.

• 마이크로전자및패키징학회지
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• 제29권4호
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• pp.89-94
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• 2022

고체상태에서 열에너지과 전기에너지를 직접적이고 가역적으로 변환할 수 있는 열전소재는 전기전도특성인 전기전도도 및 제벡계수와 열전도특성인 열전도도에 의해 그 성능이 결정된다. 하지만 전기전도도, 제벡계수, 열전도도는 소재의 조성, 결정구조 및 전자구조에 의해 결정되며, 서로 상관관계를 나타내기 때문에 성능 증대를 위한 효과적인 전략수립에 어려움이 있다. 본 논문에서는 열전소재의 성능과 관련한 수식에 대한 이해를 바탕으로 실험 결과와 연계하여 열전도도 저감 관점에서 효과적인 결함제어 기반 열전소재 성능 증대 전략을 수립할 수 있는 방법론을 제공하고자 한다.

• 한국결정학회지
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• 제14권2호
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• pp.62-66
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• 2003

VGF법을 사용하여 CuBr₂ dopant가 첨가된 Bi₂Te/sub 2.55/Se/sub 0.45/ 열전재료를 제조하였다. 이 방법을 사용하여 일방향으로 성장된 Bi₂Te/sub 2.55/Se/sub 0.45/ 잉곳의 제조가 가능하였으며 XRD 분석 결과 우선성장 방향이 (0 1 5)면임이 밝혀졌다. 본 실험을 통하여 제조한 열전재료의 Seebeck 계수와 전기전도도를 373∼523 K 범위에서 측정하였다.

• 설비공학논문집
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• 제16권1호
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• pp.62-69
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• 2004

Thermoelectric module is a device that can produce cooling in a direct manner using the electrical energy. The purpose of this study is to investigate the performance of thermoelectric module and cooling system equipped with the thermoelectric module. The performance of a thermoelectric module is estimated using two methods; theoretical analysis based on one-dimensional energy equations and experimental tests using heat source, heat sink and brass conduction extenders. For the thermoelectric cooling system, the temperatures in the chamber are recorded and then compared with those of lumped system analysis. The results show that the cooling capacity and COP of the thermoelectric module increases as the temperature difference between hot and cold surface decreases, and there is particular current at which cooling capacity reaches its maximum value. The experimental results for the thermoelectric cooling system are similar to those of lumped system analysis.

• 조명전기설비학회논문지
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• 제29권8호
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• pp.1-6
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• 2015

In this paper, we propose the LED(Light-Emitting-Diode) emergency lighting in a tunnel by using the thermoelectric devices. To achieve high generated power, thermoelectric device should be have high Seebeck coefficient and small contact area. Also, we reveal that a moderate heatsink required for high generated power. From the waste heat of LED tunnel lighting module (25W), the generated power was 0.062W by thermoelectric device, and it could illuminate for 1hour after charge the battery of emergency lighting during about 101hours.

• 한국진공학회지
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• 제9권4호
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• pp.353-359
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• 2000

마그네트론 스퍼터링법으로 p형 ($Bi_{0.15}Sb_{0.85})_2Te_3$과 ($Bi_{1-x}Sb_x)_2Te_3$ 열전박막을 제조하여 스퍼터 증착 조건 및 $Sb_2Te_3$ 함량에 따른 열전특성을 분석하였다. Corning glass 기판을 10rpm으로 회전시키며 DC 스퍼터링법으로 $300^{\circ}C$에서 증착한($Bi_{0.15}Sb_{0.85})_2Te_3$ 박막은 $(Bi, Sb)_2Te_3$ 단일상으로 결정화가 완료되고 c축 우선배향성을 나타내었으며, 다른 조건으로 증착한 ($Bi_{0.15}Sb_{0.85})_2Te_3$ 박막보다 높은 185 $\mu$V/K의 Seebeck 계수를 나타내었다. p형(Bi$_{1-x}$ Sb$_{x}$)$_2$Te$_3$ (0.77$\leq$x$\leq$ 1.0) 박막에서는 Sb$_2$Te$_3$ 함량이 증가함에 따라 Seebeck 계수와 전기비저항이 감소하였으며($Bi_{1-x}Sb_x)_2Te_3$조성에서 $0.79\times10^{-3}W/K^2$-m의 최대 출력인자를 나타내었다.

• 한국분말재료학회지
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• 제22권4호
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• pp.254-259
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• 2015

$Bi_2Te_3$ related compounds show the best thermoelectric properties at room temperature. However, n-type $Bi_2Te_{2.7}Se_{0.3}$ showed no improvement on ZT values. To improve the thermolectric propterties of n-type $Bi_2Te_{2.7}Se_{0.3}$, this research has Cu-doped n-type powder. This study focused on effects of Cu-doping method on the thermoelectric properties of n-type materials, and evaluated the comparison between the Cu chemical and mechanical doping. The synthesized powder was manufactured by the spark plasma sintering(SPS). The thermoelectric properties of the sintered body were evaluated by measuring their Seebeck coefficient, electrical resistivity, thermal conductivity, and hall coefficient. An introduction of a small amount of Cu reduced the thermal conductivity and improved the electrical properties with Seebeck coefficient. The authors provided the optimal concentration of $Cu_{0.1}Bi_{1.99}Se_{0.3}Te_{2.7}$. A figure of merit (ZT) value of 1.22 was obtained for $Cu_{0.1}Bi_{1.9}Se_{0.3}Te_{2.7}$ at 373K by Cu chemical doping, which was obviously higher than those of $Cu_{0.1}Bi_{1.9}Se_{0.3}Te_{2.7}$ at 373K by Cu mechanical doping (ZT=0.56) and Cu-free $Bi_2Se_{0.3}Te_{2.7}$ (ZT=0.51).

• 전자공학회논문지A
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• 제31A권4호
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• pp.70-76
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• 1994

A humidity sensing device based on a new humidity sensing principle is designed and fabricated in this study. The silicon thermopile is consisted of 25 couples of p-type diffused layer/Al strips. The internal resistance and the Seebeck coefficient are 300kl and 537$\mu$V/K, respectively Fabricated sensors showed linear response characteristics proportional to relative humidity changes with a sensitivity of 9$\mu$V/%RH in the range from 20% to 90%.