• Journal of the Korean Electrochemical Society
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• v.19 no.3
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• pp.114-121
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• 2016

This study investigates a CFD modeling of the charge-discharge behavior due to heat generation during charge-discharge cycles of a Li-ion secondary battery(LIB). Present LIB system adopted a current-density equation, heat and mass transfer governing equations upon the 1-dimensional system to the thickness direction for the rectangular pouch configuration. According to the 3-kinds of the charge-discharge current densities of 1C($17.5A/m^2$), 3C($52.5A/m^2$) and 5C($87.5A/m^2$) subject to a 3 V of cut-off voltage, a constant-temperature system at 298 K and three different heat generating systems were analyzed with comparison. Battery capacity decreases with increment of charge-discharge densities not only at the constant-temperature system but also at the heat-generating system. The time for charge-discharge cycles increases at the heat-generating system compare to the constant-temperature system. These trends are considered that the increase of temperature due to heat generation causes the decrement of equilibrium potential of electrodes and the increment of diffusivity of Li ions. Furthermore, cooling effects were discussed in order to control the influence of heat generation due to charge-discharge behavior of a Li-ion secondary battery.

• Journal of Environmental Science International
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• v.12 no.2
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• pp.217-225
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• 2003

Samples of size-fractionated PM10 (airborne particulate matter with aerodynamic diameter less than $10\mu\textrm{m}$) were collected at an urban site in Jeju city from May to September 2002. The mass concentration and chemical composition of the samples were measured. The data sets were then applied to the CMB receptor model to estimate the source contribution of PM10 in Jeju area. The average PM10 mass concentration was 28.80$\mu\textrm{g}/m^3$ ($24.6~33.49\mu\textrm{g}/m^3$), and the FP (fine particle with aerodynamic diameter less than $2.l\mu\textrm{m}$ fraction in PM10 was approximately 8% higher than the CP (coarse particle with aerodynamic diameter greater than $2.l\mu\textrm{m}$ and less than $10\mu\textrm{m}$ fraction in PM10. The CP composition was obviously different from the FP composition, that is, the most abundant water soluble species was nitrate ion in the FP, but sulfate ion in the CP. Also sulfur was the most dominant element in the FP, however, sodium was that in the CP. From CMB receptor model results, it was found that road dust was the largest contributor to the CP mass concentration (45% of the CP) and ammonium nitrate, domestic boiler, and marine aerosol were major sources to the CP mass. However, the secondary aerosol was the most significant contributor to the FP mass concentration (45% of the FP). In this study, it was suggested that the contributions of soil dust and gasoline vehicle became very low due to collinearity with road dust and diesel vehicle, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.20-20
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• 1998

I Ion beam technology has recently attracted much interest because it has exciting t technological p아:ential for surface analysis, ion beam mixing, surface cleaning and etching i in thin film growth and semiconductor fabrication processes, etc. Es야~cially, ion beam s sputtering has been widely used for sputter depth profiling with x-photoelectron S spectroscopy (XPS) , Auger electron s$\pi$~troscopy(AES), and secondary-ion mass S야i따oscopy(SIMS). However, The problem of surface compositional ch없1ge due to ion b bombardment remains to be understo여 없ld solved. So far sputtering processes have been s studied by s따face an외ysis tools such as XPS, AES, and SIMS which use the sputtering p process again. It would be improbable to measure the modified surface composition profiles a accurately due to ion beam bombardment with surface analysis techniques based on sputter d depth profiling. However, recently Medium energy ion scattering spectroscopy(MEIS) has b been applied to study the sputtering of solid surface at ion bombardment and has been p proved that it has been extremely valuable in probing the surface composition 뻐d s structure nondestructively and quantita디vely with less than 1.0 nm depth resolution. To u understand the sputtering processes of solid surface at ion bombardment, The Molecular D Dynamics(MD) and Monte Carlo(MC) simulation has been used and give an intimate i insight into the sputtering processes of solid surfaces. In this presentation, the sputtering processes of alloys and compound samples at ion b bombardment will be reviewed and the MEIS results for the Ar+ sputter induced altered l layer of the TazOs thin film 뻐dd없nage profiling of Ar+ ion sputt얹"ed Si(100) surface will b be discussed with the results of MD and MC simulation.tion.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.170-170
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• 2000

Synthetic polymers such as polyimide, polycarbonate, and poly(methyl methacrylate) are long chain molecules which consist of carbon, hydrogen, and heteroatom linked together chemically. Recently, polymer surface can be modified by using a high energy ion beam process. High energy ions are introduced into polymer structure with high velocity and provide a high degree of chemical bonding between molecular chains. In high energy beam process the modified polymers have the highly crosslinked three-dimensionally connected rigid network structure and they showed significant improvements in electrical conductivity, in hardness and in resistance to wear and chemicals. Polyimide films (Kapton, types HN) with thickness of 50~100${\mu}{\textrm}{m}$ were used for investigations. They were treated with two different surface modification techniques: Plasma Source Ion Implantation (PSII) and conventional Ion Implantation. Polyimide films were implanted with different ion species such as Ar+, N+, C+, He+, and O+ with dose from 1 x 1015 to 1 x 1017 ions/cm2. Ion energy was varied from 10keV to 60keV for PSII experiment. Polyimide samples were also implanted with 1 MeV hydrogen, oxygen, nitrogen ions with a dose of 1x1015ions/cm2. This work provides the possibility for inducing conductivity in polyimide films by ion beam bombardment in the keloelectronvolt to megaelectronvolt energy range. The electrical properties of implanted polyimide were determined by four-point probe measurement. Depending on ion energy, doses, and ion type, the surface resistivity of the film is reduced by several orders of magnitude. Ion bombarded layers were characterized by Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS), XPS, and SEM.

• Journal of Korean Society for Atmospheric Environment
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• v.27 no.2
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• pp.168-180
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• 2011

The variation of the physicochemical properties of atmospheric aerosols in coexistence of the heavy Asian Dust and Haze observed from $15^{th}$ to $17^{th}$ March 2009 in Seoul was scrutinized through the mass and ion concentration observations and synoptic weather analysis. Although the ratio of PM1.0/PM10 was constant at 0.3 (which is typical during Asian Dust period in Korea) during the measurement period, both PM10 and PM1.0 mass concentrations were 3~6 times and 2~4 times higher than that of clear days, respectively. Water-soluble ion components accounted for 30~50% of PM10 and 50~70% of PM1.0 mass concentration. One of the secondary pollutants, $NO_3^-$ was found to be associated with $Ca^{2+}$ and $Na^+$ in coarse mode indicating that the aerosol derived from natural source was affected by anthropogenic pollutants. While the acidity of the aerosols increased in fine mode when the stagnation of weather patterns was the strongest (March $16^{th}$), the alkalinity increased in coarse mode when new air masses arrived with a southwestern wind after ending a period of stagnation (March $17^{th}$). In the selected case, SOR (Sulfur Oxidation Ratio, $nSO_4^{2-}/[nSO_4^{2-}+nSO_2]$) and NOR (Nitrogen Oxidation Ratio, $nNO_3^-/[nNO_3^-+nNO_2]$) values of ion components were higher than the general values during Asian Dust period. These results imply that dust aerosols could be mixed with pollutants transported from China even in heavy Asian Dust cases in Korea.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.247-247
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• 2012

기존형광등보다 에너지소비가 적고, 수명이 길다는 장점을 가진 LED소자는 조명분야뿐만 아니라 선박 및 해양플랜트시장에까지 적용분야가 확대되고 있다. 그러나 LED소자의 수명연장 및 제품신뢰성을 위해서 방열에 관한 연구가 필수적이며 특히, 해양환경적용을 위해서는 내부식성을 요구하는 방열 재료개발에 대한 연구가 필요하다. 일반적으로 방열판소재로 사용되는 알루미늄의 경우 열전도도가 우수하며, 대기 중에서 쉽게 생기는 자연산화막보다 내부식특성을 향상시키기 위해 현재 국내 외의 표면처리 방법으로 전기화학적 방법을 이용한 Anodizing기술을 적용하고 있다. 하지만, Anodizing에 사용되는 질산과 황산액을 처리하는 과정에서 유독물질을 발생시킴으로 유해물질사용제한 등 국제적으로 환경규제가 강화되고 있어 Anodizing기술의 적용이 제한적인 단점이 있다. 본 연구에서는 친환경적 기술인 Plasma Immersion Ion Implantation (PIII)방식을 사용하여 알루미늄표면에 $Al_2O_3$을 형성하였다. 최적의 산화막증착 조건을 찾기 위해 Gas Flow양, Pulse Voltage, 공정온도, 시간 등을 변수로 실험을 진행하였다. SIMS (Secondary ion mass spectroscopy)를 통해 $Al_2O_3$ 박막두께 및 Oxygen의 정량분석을 하였으며, Anodizing처리된 알루미늄시편과 열전도특성과 내부식특성을 비교하기 위해 각각 Hot Disk 열전도율측정기와 Salt water tester chamber를 사용하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.119-119
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• 2015

Ion beam sputtering has been widely used in Secondary Ion Mass Spectrometry (SIMS), X-ray Photoelectron Spectroscopy (XPS), and Auger Electron Spectroscopy (AES) for depth profile or surface cleaning. However, mainly due to severe matrix effects such as surface composition change from its original composition and damage of the surface generated by ion beam bombardment, conventional sputtering skills using mono-atomic primary ions with energy ranging from a few hundred to a thousand volts are not sufficient for the practical surface analysis of next-generation organic/inorganic device materials characterization. Therefore, minimization of the surface matrix effects caused by the ion beam sputtering is one of the key factors in surface analysis. In this work, the electronic structure of a $Ta_2O_5$ thin film on $SiO_2/Si$ (100) after Ar Gas Cluster Ion Beam (GCIB) sputtering was investigated using X-ray photoemission spectroscopy and compared with those obtained via mono-atomic Ar ion beam sputtering. The Ar ion sputtering had a great deal of influence on the electronic structure of the oxide thin film. Ar GCIB sputtering without sample rotation also affected the electronic structure of the oxide thin film. However, Ar GCIB sputtering during sample rotation did not exhibit any significant transition of the electronic structure of the $Ta_2O_5$ thin films. Our results showed that Ar GCIB can be useful for potential applications of oxide materials with sample rotation.

• Korean Journal of Materials Research
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• v.1 no.3
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• pp.125-131
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• 1991

Boron penetration phenomenon of $p^{+}$ silicon gate with as-deposited amorphous or polycrystalline Si upon high temperature annealing was investigated using high frequency C-V (Capacitance-Volt-age) analysis, CCST(Constant Current Stress Test), TEM(Transmission Electron Microscopy) and SIMS(Secondary Ion Mass Spectroscopy), C-V analysis showed that an as-deposited amorphous Si gate resulted in smaller positive shifts in flatband voltage compared wish a polycrystalline Si gate, thus giving 60-80 percent higher charge-to-breakdown of gate oxides. The reduced boron penetration of amorphous Si gate may be attributed to the fewer grain boundaries available for boron diffusion into the gate oxide and the shallower projected range of $BF_2$ implantation. The relation between electron trapping rate and flatband voltage shift was also discussed.

• Journal of the Korean Vacuum Society
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• v.22 no.3
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• pp.126-130
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• 2013

The sodium (Na) and moisture ($H_2O$) gettering phenomena were measured and analyzed in PSG/$SiO_2$ passivated Al-1%Si thin film interconnections. PSG/$SiO_2$ passivation and Al-1%Si thin films were deposited by using APCVD (atmosphere pressure chemical vapor deposition) and DC magnetron sputter techniques, respectively. SIMS (secondary ion mass spectrometry) depth profiling analysis was used to determine the distribution of sodium and moisture throughout the PSG/$SiO_2$ passivated Al-1%Si thin film interconnections. Both sodium and moisture peaks were observed strongly at the interfaces between layers rather than within the Al-1%Si thin film interconnections. Sodium peaks were observed at the interface between PSG and $SiO_2$ passivations, while moisture peaks were not observed.

• Transactions on Electrical and Electronic Materials
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• v.11 no.3
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• pp.120-125
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• 2010

For the fabrication of PMOS and integrated semiconductor devices, B, $BF_2$ and dual elements with B and $BF_2$ can be implanted in silicon. 15 keV B ions were implanted in silicon at $7^{\circ}$ wafer tilt and a dose of $3.0{\times}10^{16}\;cm^{-2}$. 67 keV $BF_2$ ions were implanted in silicon at $7^{\circ}$ wafer tilt and a dose of $3.0{\times}10^{15}\;cm^{-2}$. For dual implantations, 67 keV $BF_2$ and 15keV B were carried out with two implantations with dose of $1.5{\times}10^{15}\;cm^{-2}$ instead of $3.0{\times}10^{15}\;cm^{-2}$, respectively. For the electrical activation, the implanted samples were annealed with rapid thermal annealing at $1,050^{\circ}C$ for 30 seconds. The implanted profiles were characterized by using secondary ion mass spectrometry in order to measure profiles. The implanted and annealed results show that concentration profiles for the ${BF_2}^+$ implant are shallower than those for a single $B^+$ and dual ($B^+$ and ${BF_2}^+$) implants in silicon. This effect was caused by the presence of fluorine which traps interstitial silicon and ${BF_2}^+$ implants have lower diffusion effect than a single and dual implantation cases. For the fabricated diodes, current-voltage (I-V) and capacitance-voltage (C-V) were also measured with HP curve tracer and C-V plotter. Electrical measurements showed that the dual implant had the best result in comparison with the other two cases for the turn on voltage characteristics.