• Journal of the Korean Vacuum Society
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• v.10 no.2
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• pp.225-233
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• 2001

Distortion of Secondary Ion Mass Spectrometry(SIMS) depth profile, which is usually observed when the analysis is made using oxygen flooding on the surface of Si with oxide on it, has been corrected. The origin of distortion has been attributed to depth calibration error due to sputter rate difference and concentration calibration error due to relative sensitivity factor(RSF) difference between $SiO_2$ and Si layers, In order to correct depth calibration error, artifact in analysis of sodium ion on oxide was used to define the interface in SIMS depth profile and oxide thickness was measured with SEM and XPS. The differences of sputter rate and RSF between two layers have been attributed to volume swelling of Si substrate occurred by oxygen flooding induced oxidation. The corrected SIMS depth profiles showed almost the same results with those obtained without oxygen flooding.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.1
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• pp.30-35
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• 2002

We show that a combined technique of Cs$^{+}$ reactive ion scattering (Cs$^{+}$ RIS) and low-energy secondary ion mass spectrometry (LESIMS) provides a powerful means for probing molecular films and their surface reactions. Simple molecules, including HCI, NH$_3$, D$_2$O, and their mixtures, were deposited into a thin film of several monolayer thickness on Ru(001) at low temperature in vacuum, and the surface was characterized by Cs$^{+}$ RIS and LESIMS. On pure films, D$_2$O, HCI, and NH$_3$ existed in the corresponding molecular states. When HCI and NH$_3$ were co-deposited, ammonium ion(NH$_4$$^{+}$) was readily formed by proton transfer from HCI to NH$_3$. In the presence of water molecules, HCI ionized first to hydronium ion(H$_3$O$^{+}$), which subsequently transferred proton to NH$_3$ to form NH$_4$$^{+}$. The proton transfer, however, did not occur to a completion on ice, in contrast to the complete reaction in aqueous solutions.s solutions.

• The Journal of Korean Academy of Prosthodontics
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• v.33 no.2
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• pp.354-357
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• 1995

The secondary ion of titanium from commercially pur titanium implant which installed at Rabbit tibia. Was analyzed by Secondary lon Mass Spectroscopy. And we detected about 3476 ppm ion from $10-50{\mu}m$ distance from interface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.185-186
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• 2005

Intrinsic gettering is usually used to improve wafer quality which is an important factor for reliable ULSI devices. The two-step annealing method was adopted in order to investigate interactions between oxygens and secondary defects during oxygen precipitation process in lightly and heavily boron doped silicon wafers with high energy $^{11}B^+$ ion implantation. Secondary defects were inspected nearby the projected range by high resolution transmission electron microscopy. Oxygen pileup was measured in the vicinity of the projected range by secondary ion mass spectrometry for heavily boron doped silicon wafers.

• Journal of the Korean Vacuum Society
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• v.10 no.3
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• pp.328-334
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• 2001

The characteristics of $NO/N_2O$ nitrided oxide and reoxidized nitrided oxide being studied as super thin gate oxide and gate dielectric layers of nonvolatile semiconductor memory(NVSM) was investigated by dynamic secondary ion mass spectrometry(D-SMS), time-of-flight secondary ion mass spectrometry(ToF-SIMS), and x-ray photoelectron spectroscopy (XPS). The specimen was annealed in $NO/N_2O$ ambient after initial oxide process. The result of D-SIMS exhibits that the center of nitrogen exists at the initial oxide interface and the distribution of nitrogen is wider in the annealing process with $N_2O$ than with NO annealing process. For investigating the condition of nitrogen that exists within the nitrided oxide, ToF-SIMS and XPS analysis were carried out. It was shown that the center of nitrogen investigated by D-SIMS was expected the SiON chemical bonds. The nitrogen near the newly formed reoxide/silicon substrate interface was appeared as $Si_2NO$ chemical bonds, and it is agreed with the distribution of SiN and $Si_2NO$ species by ToF-SIMS.

• Progress in Superconductivity
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• v.14 no.2
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• pp.92-95
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• 2012

Superconducting detectors are promising as ion detectors for time-of-flight mass spectrometers (TOF MS). They can achieve mass-independent detection efficiency even for macromolecular bombardments, because output signals are produced through the deposited kinetic energy at ion impact instead of secondary electron emission that is the ion detection mechanism of conventional microchannel plate (MCP) detectors or secondary electron multipliers (SEM). Among the superconducting detectors, the superconducting strip ion detectors (SSIDs), which consist of several hundreds of superconducting lines with a width of a few hundreds nm and a thickness of a few tens of nm, have a fast response time of less than 1 ns. Inherently, the response time of SSIDs is determined by kinetic inductance, so that it was difficult to realize a fast SSID with a large detection area. However, we succeeded in realizing the detector size up to $5{\times}5mm^2$ without response time degradation by using a parallel configuration.

• Journal of Environmental Science International
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• v.26 no.6
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• pp.767-778
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• 2017

This research investigates the characteristics of metallic and ionic elements in $PM_{10}$ and $PM_{2.5}$ on haze day and non-haze day in Busan. $PM_{10}$ concentration on haze day and non-haze day were 85.75 and $33.52{\mu}g/m^3$, respectively, and $PM_{2.5}$ on haze day and non-haze day were 68.24 and $23.86{\mu}g/m^3$, respectively. Contribution rate of total inorganic water-soluble ion to $PM_{10}$ mass on haze day and non haze day were 58.2% and 61.5%, respectively, and contribution rate of total water-soluble ion to $PM_{2.5}$ mass on haze day and non haze day were 58.7% and 64.7%, respectively. Also, contribution rate of secondary ion to $PM_{10}$ mass on haze day and non haze day were 52.1% and 47.5%, respectively, and contribution rate of secondary ion to $PM_{2.5}$ mass on haze day and non haze day were 54.4% and 53.6%, respectively. AC (anion equivalents)/CE (cation equivalents) ratio of $PM_{10}$ mass on haze day and non haze day were 1.09 and 1.0, respectively, and AC/CE ratios of $PM_{2.5}$ mass on haze day and non haze day were 1.12 and 1.04, respectively. Also, SOR (Sulfur Oxidation Ratio) of $PM_{10}$ mass on haze day and non haze day were 0.32 and 0.17, respectively, and SOR of $PM_{2.5}$ on haze day and non haze day were 0.30 and 0.15, respectively. Lastly, NOR (Nitrogen Oxidation Ratio) of $PM_{10}$ on haze day and non haze day were 0.17 and 0.08, respectively, and NOR of $PM_{2.5}$ on haze day and non haze day were 0.13 and 0.06, respectively.

• Bulletin of the Korean Chemical Society
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• v.34 no.3
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• pp.815-819
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• 2013

Micropatterns of streptavidin and human epidermal carcinoma A431 cells were successfully imaged, as received and without any labeling, using cluster $Au_3{^+}$ ion beam-based time-of-flight secondary ion mass spectrometry (TOF-SIMS) together with a principal component analysis (PCA). Three different analysis ion beams ($Ga^+$, $Au^+$ and $Au_3{^+}$) were compared to obtain label-free TOF-SIMS chemical images of micropatterns of streptavidin, which were subsequently used for generating cell patterns. The image of the total positive ions obtained by the $Au_3{^+}$ primary ion beam corresponded to the actual image of micropatterns of streptavidin, whereas the total positive-ion images by $Ga^+$ or $Au^+$ primary ion beams did not. A PCA of the TOF-SIMS spectra was initially performed to identify characteristic secondary ions of streptavidin. Chemical images of each characteristic ion were reconstructed from the raw data and used in the second PCA run, which resulted in a contrasted - and corrected - image of the micropatterns of streptavidin by the $Ga^+$ and $Au^+$ ion beams. The findings herein suggest that using cluster-ion analysis beams and multivariate data analysis for TOF-SIMS chemical imaging would be an effectual method for producing label-free chemical images of micropatterns of biomolecules, including proteins and cells.

• Mass Spectrometry Letters
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• v.7 no.3
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• pp.64-68
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• 2016

Scanning electron microscopy combined with thermal ionization mass spectrometry (SEM-TIMS) was used to determine the precise isotope ratios of ultra-trace levels of uranium contained in individual microparticles. An advanced multiple ion counter system consisting of three secondary ion multipliers and two compact discrete dynodes was used for complete simultaneous ion detection. For verification purposes, using TIMS with complete simultaneous measurement, isotopes were analyzed in 5 pg of uranium of a certified reference material. A microprobe in the SEM was used to transfer individual particles from a NUSIMEP-7 sample to TIMS filaments, which were then subjected to SEM-TIMS and complete simultaneous measurement. The excellent agreement in the resulting uranium isotope ratios with the certified NUSIMEP-7 values shows the validity of SEM-TIMS with complete simultaneous measurement for the analysis of uranium isotopes in individual particles. Further experimental study required for investigation of simultaneous measurement using the advanced multiple ion counter system is presented.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.2
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• pp.118-121
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• 1998

Diisopropylselenide (DIPSe) is employed for the metalorganic vapor phase epitaxy (MOVPE) of ZnSe in order to eliminate premature gas phase reaction while maintaining negligible carbon incorporation and preserving relatively low growth temperature. In combination with dimethylzinc, single crystalline ZnSe layers were grown on GaAs at temperature around 450$^{\circ}C$. Secondary ion mass spectrometry showed a negligible carbon incorporation in ZnSe films grown from DIPSe even at high [Ⅵ]/[II] ratios, in contrast of a carbon concentration of 1021 cm-3 in ZnSe films grown from diallyselenide (DASe). Crystalline and interface quality are demonstrated by secondary electron microscopy, secondary ion mass spectroscopy and double crystal X-ray diffraction.