• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.4
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• pp.263-270
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• 2020

In this study, the physical mechanism and diffusion effects in aluminium implanted silicon was investigated. For fabricating power semiconductor devices, an aluminum implantation can be used as an emitter and a long drift region in a power diode, transistor, and thyristor. Thermal treatment with O₂ gas exhibited to a remarkably deeper profile than inert gas with N₂ in the depth of junction structure. The redistribution of aluminum implanted through via thermal annealing exhibited oxidation-enhanced diffusion in comparison with inert gas atmosphere. To investigate doping distribution for implantation and diffusion experiments, spreading resistance and secondary ion mass spectrometer tools were used for the measurements. For the deep-junction structure of these experiments, aluminum implantation and diffusion exhibited a junction depth around 20 ㎛ for the fabrication of power silicon devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.731-734
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• 2000

The characterization of Zinc diffusion processes applied fur high-speed avalanche photodiodes has been examined. The different diffusion process conditions for InP test structures were explored. The Zinc diffusion profiles, such as the diffusion depth and the Zinc dopant concentration, were examined using secondary ion mass spectrometry with varying the process variables and material parameters. It is observed that the diffusion profiles are severely impacted on the process parameters, such as the amount of Zn$_3$P$_2$source and the diffusion time, as well as material parameters, such as doping concentration of diffusion layer. These results can be utilized for the high-speed avalanche photodiode fabrication.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.02a
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• pp.161-161
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• 1996

Recently, the role of the surface analysis on the development of advanced materials has become larger and larger as the surface compositions of these materials is the key of their performances. Especially three techniques, Auger electron spectroscopy, X- ray photoelectron spectroscopy and secondary ion mass spectroscopy are widely used in technology fields. However, because of the relatively short history of these techniques(thirty years or so), there has been no accumulation of data commonly available, physical parameters for analysis have not been established and there has been no standard data. With these background, the VAMAS projects which aims to standardize the manner in the field of these techniques has started in 1982 at Versailles Summit. Along the projects, we have conducted the international collaborating study on the sharing of spectral data. In 1994, the Science and Technology Agency of Japan began the project on computer network, on which our fruits from the study on spectral data sharing is boarded.(omitted)mitted)

• Journal of Korean Society for Atmospheric Environment
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• v.34 no.3
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• pp.393-405
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• 2018

Volatile organic compounds (VOCs) are representative air pollutants due to their detrimental effects on human health and their role in formation of secondary organic aerosols. Assessments and monitoring programs of VOCs using periodic grab sampling like Tedlar bags, canisters, and sorbent traps provide limited information, often with delay times of days or weeks. Selected ion flow tube mass spectrometry (SIFT-MS) is an emerging analytical technique for the real-time quantification of VOCs in air. It relies on chemical ionization of the VOCs molecules in air introduced into helium carrier gas using $H_3O^+$, $NO^+$, and $O_2{^+}$ precursor ions. Real-time monitoring method of 60 VOCs in the ambient air was developed using TO-15 standard gas mixture. Calibration curves, method detection limit, and quantitation reproducibility of the target compounds were tested. Dynamic dilution system was used to dilute standard gas from 0.174 ppbv to 100 ppbv, where calibration curves showed good linearity with $r^2$> 0.95 in all target analytes. Limit of detection (LOD) all compounds were sub ppbv, and some halogenated compounds showed pptv levels. Seven consecutive analyses of target compounds showed good repeatability with relative standard deviation of less than 10%. One day monitoring of VOCs in ambient air was conducted in Geoje. Average concentration of target VOCs in Geoje were relatively lower than other regions, among which formaldehyde showed the highest concentration ($15.4{\pm}5.78ppbv$). SIFT-MS provided good temporal resolution data (1 data per 3.2 minute), which can be used for identifying ephemeral short-term event. It is expected that SIFT-MS will be a versatile monitoring platform for VOCs in ambient air.

• Journal of Korean Society for Atmospheric Environment
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• v.27 no.6
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• pp.711-722
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• 2011

This study is aimed to estimate the $PM_{2.5}$ source apportionment at Seoul intensive monitoring site located in Seoul metropolitan area. Time-resolved chemical compositions of $PM_{2.5}$ are measured in real time using ambient ion monitor, semi-continuous carbon monitor, and on-line XRF at Seoul intensive monitoring site in 2010. The mass concentration of $PM_{2.5}$ was simultaneously monitored with eight ionic species (${SO_4}^{2-}$, $NO_3{^-}$, $Cl^-$, $NH_4{^+}$, $Na^+$, $K^+$, $Mg^{2+}$, $Ca^{2+}$), two carbonaceous species (OC and EC), and fourteen elements (Si, K, Ca, Ti, V, Cr, Mn, Fe, Co, Ni, Zn, As, Se, Pb) in 1-hr interval. The data sets were then analyzed using EPA PMF version 3 to identify sources and contributions to $PM_{2.5}$ mass. EPA PMF modeling identified eight PM2.5 sources, including soil dust, secondary sulfate, secondary nitrate, motor vehicle, coal combustion, oil combustion, biomass burning, and municipal incineration. This study found that the average $PM_{2.5}$ mass was apportioned to anthropogenic sources such as motor vehicle, fuel combustion, and biomass burning (61%) and secondary aerosols, including sulfate and nitrate (38%).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.479-485
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• 2002

We have investigated the effects of various wafers cleaning on glass/Si bonding using 4 inch Pyrex glass wafers and 4 inch silicon wafers. The various wafer cleaning methods were examined; SPM(sulfuric-peroxide mixture, $H_2SO_4:H_2O_2$ = 4 : 1, $120^{\circ}C$), RCA(company name, $NH_4OH:H_2O_2:H_2O$ = 1 : 1 : 5, $80^{\circ}C$), and combinations of those. The best room temperature bonding result was achieved when wafers were cleaned by SPM followed by RCA cleaning. The minimum increase in surface roughness measured by AFM(atomic force microscope) confirmed such results. During successive heat treatments, the bonding strength was improved with increased annealing temperatures up to $400^{\circ}C$, but debonding was observed at $450^{\circ}C$. The difference in thermal expansion coefficients between glass and Si wafer led debonding. When annealed at fixed temperatures(300 and $400^{\circ}C$), bonding strength was enhanced until 28 hours, but then decreased for further anneal. To find the cause of decrease in bonding strength in excessively long annealing time, the ion distribution at Si surface was investigated using SIMS(secondary ion mass spectrometry). tons such as sodium, which had been existed only in glass before annealing, were found at Si surface for long annealed samples. Decrease in bonding strength can be caused by the diffused sodium ions to pass the glass/si interface. Therefore, maximum bonding strength can be achieved when the cleaning procedure and the ion concentrations at interface are optimized in glass/Si wafer direct bonding.

• Korean Journal of Materials Research
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• v.13 no.1
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• pp.43-47
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• 2003

As and BF$_2$dopants are implanted for the formation of source/drain with dose of 1${\times}$10$^{15}$ ions/$\textrm{cm}^2$∼5${\times}$10$^{15}$ ions/$\textrm{cm}^2$ then formed cobalt disilicide with Co/Ti deposition and doubly rapid thermal annealing. Appropriate ion implantation and cobalt salicide process are employed to meet the sub-0.13 $\mu\textrm{m}$ CMOS devices. We investigated the process results of sheet resistance, dopant redistribution, and surface-interface microstructure with a four-point probe, a secondary ion mass spectroscope(SIMS), a scanning probe microscope (SPM), and a cross sectional transmission electron microscope(TEM), respectively. Sheet resistance increased to 8%∼12% as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{V}$ , while sheet resistance uniformity showed very little variation. SIMS depth profiling revealed that the diffusion of As and B was enhanced as dose increased in $CoSi_2$$n^{＋}$ and $CoSi_2$$p^{＋}$ . The surface roughness of root mean square(RMS) values measured by a SPM decreased as dose increased in $CoSi_2$$n^{＋}$ , while little variation was observed in $CoSi_2$$p^{＋}$ . Cross sectional TEM images showed that the spikes of 30 nm∼50 nm-depth were formed at the interfaces of $CoSi_2$$n^{＋}$ / and $CoSi_2$/$p^{＋}$, which indicate the possible leakage current source. Our result implied that Co/Ti cobalt salicide was compatible with high dose sub-0.13$\mu\textrm{m}$ process.

• Korean Journal of Materials Research
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• v.2 no.1
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• pp.35-42
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• 1992

Thermal behavior of residue and damaged layer formed by reactive ion etching (RIE) in $CHF_3/C_2F_6$ were investigated using X-ray photoelectron spectroscopy(XPS) and secondary ion mass spec-trometry(SIMS) techniques. Decomposition of polymer residue film begins at $200^{\circ}C$ and above $400^{\circ}C$ carbon compound as graphite mainly forms by in-situ resistive heating. It reveals that thermal decomposition of residue can be completed by rapid thermal anneal treatment above $800^{\circ}C$ under nitrogen atmosphere and out-diffusion of carbon and fluorine of damaged layer is observed.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.204-204
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• 1999

The plasma source ion implantation(PSII) technique which is a method using high negative voltage pulse in plasma system has the potential to change the surface properties of polymer. PSII technique increase the surface free energy by introducing polar functional groups on the surface so that it improves reactivity, hydrophilicity, adhension, biocompatability, etc. However, the mobility of polymer chains enables the modified surface layers to adapt their composition to interfacial force. This hydrophobic recovery interrupts the stability of modified surfaces to keep for the long time. In this study, poly(methyl methacrylate)(PMMA), poly(2-hydroxyethyl methacrylate)(PHEMA), and polu(2-hydroxypropyl methacylate)(PHPMA) for contact lens application, were modified to improve the wettability with PSII technique and were investigated the surface stabilities. Polymer film was prepared with solution casting(3 wt.% solution) and was annealed at 11$0^{\circ}C$ under vacuum oven to remove solvent completely and to eliminate physical ageing. The thickness of the film measured by scanning electron microscopy (SEM) and surface profilometer was about 10${\mu}{\textrm}{m}$. Polymers were treated with different kinds of gases, pulse frequency, pulse with, pulse voltage, and treatment time. Even though PMMA, PHEMA, and PHPMA have similar repeat unit structure, the optimal treatment conditions and the tendency to hydrophobic recovery were different. PHPMA, more hydrophilic polymer than PMMA and PHEMA showd better wettability and stability after mild treatment. Surface tensions were obtained by water and diiodomethane contact angle measurements to monitor the relation between hydrophobic recovery and polymer structure. Different ion species in plasma change the polar component and dispersion component of polymer surface. For better wettability surface, the increase of polar component was a dominant factor. We also characterized modified polymer surfaces using x-ray photoelectron spectroscopy(XPS), secondary ion mass spectrometry(SIMS), Fourier Transform infrared spectroscopy(FT-IR), and SEM.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.274-274
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• 2012

In-depth analysis by secondary ion mass spectrometry (SIMS) is very important for the development of electronic devices using multilayered structures, because the quantity and depth distribution of some elements are critical for the electronic properties. Correct determination of the interface locations is critical for the calibration of the depth scale in SIMS depth profiling analysis of multilayer films. However, the interface locations are distorted from real ones by the several effects due to sputtering with energetic ions. In this study, the determination of interface locations in SIMS depth profiling of multilayer films was investigated by Si/Ge and Ti/Si multilayer systems. The original SIMS depth profiles were converted into compositional depth profiles by the relative sensitivity factors (RSF) derived from the atomic compositions of Si-Ge and Si-Ti alloy reference films determined by Rutherford backscattering spectroscopy. The thicknesses of the Si/Ge and Ti/Si multilayer films measured by SIMS depth profiling with various impact energy ion beam were compared with those measured by TEM. There are two methods to determine the interface locations. The one is the feasibility of 50 atomic % definition in SIMS composition depth profiling. And another one is using a distribution of SiGe and SiTi dimer ions. This study showed that the layer thicknesses measured with low energy oxygen and Cs ion beam and, by extension, with method of 50 atomic % definition were well correlated with the real thicknesses determined by TEM.