• Korean Journal of Crystallography
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• v.5 no.2
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• pp.93-99
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• 1994

Growth form and surface morphology of NYAB single crystal grown by TSSG technique using a K2O/3MoOS/0.5B203 flux was investigated. In the crystal grown from <100> or <120> seed, prismatic and (101) faces were well developed with different size each other. (001) face was also developed in the crystal grown from <001> seed. While growth hillocks were observed on the prismatic face of the crystal grown from <100> seed, surface striations parallel to neighbor (101) faces were formed on that face of the crystal grown from <001> seed. The (101) faces were grown by two dimensional nucleation growth. (001) face which was developed at slow growth velocity of [001] direction was grown by screw dislocation Anisotropy of growth velocity as to seed orientation affected on crystal morphology and surface morphology.

• Journal of Korean Neurosurgical Society
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• v.53 no.1
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• pp.49-51
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• 2013

A case of traumatic spondyloptosis of the cervical spine at the C6-C7 level is reported. The patient was treated succesfully with a anterior-posterior combined approach and decompression. The patient had good neurological outcome after surgery. A-51-year-old female patient was transported to our hospital's emergency department after a vehicle accident. The patient was quadriparetic (Asia D, MRC power 4/5) with severe neck pain. Plain radiographs, computerize tomography and spinal magnetic resonance imaging (MRI) showed C6-7 spondyloptosis and C5, C6 posterior element fractures. Gardner-Wells skeleton traction was applied. Spinal alignment was reachived by traction and dislocation was decreased to a grade 1 spondylolisthesis. Then the patient was firstly operated by anterior approach. Anterior stabilization and fusion was firstly achieved. Seven days after first operation the patient was operated by a posterior approach. The posterior stabilization and fusion was achieved. Postoperative lateral X-rays and three-dimensional computed tomography showed the physiological realignment and the correct screw placements. The patient's quadriparesis was improved significantly. Subaxial cervical spondyloptosis is a relatively rare clinical entity. In this report we present a summary of the clinical presentation, the surgical technique and outcome of this rarely seen spinal disorder.

• Nuclear Engineering and Technology
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• v.43 no.5
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• pp.421-428
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• 2011

The out-of-pile mechanical performance and microstructure of recrystallized Zr-1.5 Nb-S alloy was investigated. The strength of the recrystallized Zr-1.5Nb-O-S alloys was observed to increase with the addition of sulfur over a wide temperature range, from room temperature up to $300^{\circ}C$. A yield drop and stress serrations due to dynamic strain were observed at room temperature and $300^{\circ}C$. Wavy and curved dislocations and loosely knit tangles were observed after strained to 0.07 at room temperature, suggesting that cross slip is easier. At $300^{\circ}C$, however, dislocations were observed to be straight and aligned along the slip plane, suggesting that cross slip is rather difficult. At $300^{\circ}C$, oxygen atoms are likely to exert a drag force on moving dislocations, intensifying the dynamic strain aging effect. Oxygen atoms segregated at partial dislocations of a screw dislocation with the edge component may hinder the cross slip, resulting in the rather straight dislocations distributed on the major slip planes. Recrystallized Zr-Nb-S alloys exhibited ductile fracture surfaces, supporting the beneficial effect of sulfur in zirconium alloys. Oxidation resistance in air was also found to be improved with the addition of sulfur in Zr-1.5 Nb-O alloys.

• Korean Journal of Materials Research
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• v.29 no.10
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• pp.579-585
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• 2019

In this study, we investigate the effect of Al/N source ratios and growth rates on the growth and structural properties of AlN films on c-plane sapphires by plasma-assisted molecular beam epitaxy. Both growth rates and Al/N ratios affect crystal qualities of AlN films. The full width at half maximum (FWHM) values of ($10{\bar{1}}5$) X-ray rocking curves (XRCs) change from 0.22 to $0.31^{\circ}$ with changing of the Al/N ratios, but the curves of (0002) XRCs change from 0.04 to $0.45^{\circ}$ with changing of the Al/N ratios. This means that structural deformation due to dislocations is slightly affected by the Al/N ratio in the ($10{\bar{1}}5$) XRCs but affected strongly for the (0002) XRCs. From the viewpoint of growth rate, the AlN films with high growth rate (HGR) show better crystal quality than the low growth rate (LGR) films overall, as shown by the FWHM values of the (0002) and ($10{\bar{1}}5$) XRCs. Based on cross-sectional transmission electron microscope observation, the HGR sample with an Al/N ratio of 3.1 shows more edge dislocations than there are screw and mixed dislocations in the LGR sample with Al/N ratio of 3.5.

• Journal of the Korean Orthopaedic Association
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• v.56 no.1
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• pp.51-60
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• 2021

Purpose: Radiocarpal dislocation (RCD), which is caused by high-energy trauma, often involves radial styloid fractures and short radiolunate ligament (SRLL) injuries. Although SRLL injuries may occur as a simple rupture at the attachment site of radius, it may occur with a relatively large avulsed-fragment in the volar rim of the lunate facet of the radius. This study aimed to differentiate the injury type of SRLL and assess the differences in the treatment results depending on the treatment methods that have been applied in RCD with radial styloid fractures. Materials and Methods: Eighteen patients managed surgically with RCD were enrolled in this study. The patients were classified as Group 1 and Group 2 by using the Dumontier method. In this study, Group 2 was subdivided into 2A (purely ligamentous or small avulsion fracture of the volar rim of lunate facet) and 2B (large avulsed-fragment enough to internal fixation) according to the injury type of SRLL. Groups 2A and 2B were treated with direct repair and screw fixation, respectively. Pain, range of motion of the wrist joint, grip strength, and complications on final radiographs were examined. The outcomes were evaluated using patient-rated wrist evaluation (PRWE), and modified Mayo wrist score (MMWS). Results: All patients were Group 2 (six and twelve patients in 2A and 2B, respectively). The mean flexion to extension arch recovered 79%,and the mean grip strength was 72.9% of the uninjured side. Group 2A showed better recovery in extension, flexion and pronation than Group 2B, but there was no difference in radial deviation, ulnar deviation, supination, grip strength and pain. No differences in the PRWE and MMWS were observed between two groups. Complications included traumatic arthritis in seven patients and residual instability in five patients. Conclusion: When the SRLL was injured, the involvement of a large avulsion fracture on the anterior plane of the radiolunate did not affect the test results. On the other hand, it should be observed cautiously because avulsion fractures tend to disturb the joint's reduction through rotation or displacement. In addition, anatomical reduction and sturdy internal fixation are important for restoring the function of the SRLL.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.3
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• pp.135-139
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• 2018

In this study, we report the effect of VI/III ratio on ${\alpha}-Ga_2O_3$ epilayer on sapphire substrate by halide vapor phase epitaxy. The surface of ${\alpha}-Ga_2O_3$ epilayer grown with various VI/III ratios was flat and crack-free. To analyze the optical properties of the ${\alpha}-Ga_2O_3$ epilayers, the transmittance and an optical band gap were measured. The optical band gap was shown to be around 5 eV and showed a proportional increase in VI/III ratios. To determine the crystal quality of alpha gallium oxide grown with a ratio of 23, closed to the theoretical optical band gap, the FWHM was measured by HR-XRD. The calculated dislocation density of screw and edge were $1.5{\times}10^7cm^{-2}$ and $5.4{\times}10^9cm^{-2}$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.426-431
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• 2019

In this study, we report the effect of pre-treatment of alpha-$Ga_2O_3$ grown on a sapphire substrate by halide vapor phase epitaxy (HVPE). During the pre-treatment process, 10 sccm of GaCl gas was injected to the sapphire substrate at $470^{\circ}C$. The surface morphologies of the alpha-$Ga_2O_3$ layers grown with various pre-treatment time (3, 5, and 10 min) were flat and crack-free. The transmittance of the alpha-$Ga_2O_3$ epi-layers was measured to analyze their optical properties. The transmittance was over 80% within the range of visible light. The strain in the alpha-$Ga_2O_3$ grown with a pre-treat 5 min was measured, and was found to be close to the theoretical XRD peak position. This can be explained by the reduction of strain having caused a lattice mismatch between the alpha-$Ga_2O_3$ layer and sapphire substrate. The calculated dislocation density of the screw and edge were $2.5{\times}10^5cm^{-2}$ and $8.8{\times}10^9cm^{-2}$, respectively.