Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effect of Pre-Treatment of Alpha-Ga2O3 Grown on Sapphire by Halide Vapor Phase Epitaxy

HVPE 방법으로 성장된 알파-갈륨 옥사이드의 전처리 공정에 따른 특성 변화

  • Choi, Ye-ji (Optic & Electronic Components Materials Center, Korea Institute of Ceramic Engineering & Technology) ;
  • Son, Hoki (Optic & Electronic Components Materials Center, Korea Institute of Ceramic Engineering & Technology) ;
  • Ra, Yong-Ho (Optic & Electronic Components Materials Center, Korea Institute of Ceramic Engineering & Technology) ;
  • Lee, Young-Jin (Optic & Electronic Components Materials Center, Korea Institute of Ceramic Engineering & Technology) ;
  • Kim, Jin-Ho (Optic & Electronic Components Materials Center, Korea Institute of Ceramic Engineering & Technology) ;
  • Hwang, Jonghee (Optic & Electronic Components Materials Center, Korea Institute of Ceramic Engineering & Technology) ;
  • Kim, Sun Woog (Optic & Electronic Components Materials Center, Korea Institute of Ceramic Engineering & Technology) ;
  • Lim, Tae-Young (Optic & Electronic Components Materials Center, Korea Institute of Ceramic Engineering & Technology) ;
  • Jeon, Dae-Woo (Optic & Electronic Components Materials Center, Korea Institute of Ceramic Engineering & Technology)
  • 최예지 (한국세라믹기술원 광.전자부품소재센터) ;
  • 손호기 (한국세라믹기술원 광.전자부품소재센터) ;
  • 라용호 (한국세라믹기술원 광.전자부품소재센터) ;
  • 이영진 (한국세라믹기술원 광.전자부품소재센터) ;
  • 김진호 (한국세라믹기술원 광.전자부품소재센터) ;
  • 황종희 (한국세라믹기술원 광.전자부품소재센터) ;
  • 김선욱 (한국세라믹기술원 광.전자부품소재센터) ;
  • 임태영 (한국세라믹기술원 광.전자부품소재센터) ;
  • 전대우 (한국세라믹기술원 광.전자부품소재센터)
  • Received : 2019.04.24
  • Accepted : 2019.06.25
  • Published : 2019.09.01
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Abstract

In this study, we report the effect of pre-treatment of alpha-$Ga_2O_3$ grown on a sapphire substrate by halide vapor phase epitaxy (HVPE). During the pre-treatment process, 10 sccm of GaCl gas was injected to the sapphire substrate at $470^{\circ}C$. The surface morphologies of the alpha-$Ga_2O_3$ layers grown with various pre-treatment time (3, 5, and 10 min) were flat and crack-free. The transmittance of the alpha-$Ga_2O_3$ epi-layers was measured to analyze their optical properties. The transmittance was over 80% within the range of visible light. The strain in the alpha-$Ga_2O_3$ grown with a pre-treat 5 min was measured, and was found to be close to the theoretical XRD peak position. This can be explained by the reduction of strain having caused a lattice mismatch between the alpha-$Ga_2O_3$ layer and sapphire substrate. The calculated dislocation density of the screw and edge were $2.5{\times}10^5cm^{-2}$ and $8.8{\times}10^9cm^{-2}$, respectively.

Keywords

References

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