• 마이크로전자및패키징학회지
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• 제22권4호
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• pp.65-70
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• 2015

히트 싱크용 소재에 응용할 목적으로 단층금속과 2층 단면구조 복합재료에 대해 열전도 특성을 연구하였다. 단층금속으로는 알루미늄합금(Al6061)을 사용했으며, 2층 단면구조 복합재료로는 Al6061기판에 질화알루미늄(AlN)을 스크린 인쇄한 층상구조 복합재료를 선택하였다. 섬광법으로 측정한 열확산계수와 비열 및 밀도를 사용해서 열전도도를 측정하였다. 실험을 통해 얻은 열전도 특성 값을 참고문헌에 보고된 자료를 사용해 계산한 값과 비교하였다. Al6061 기판에 스크린인쇄법으로 AlN 후막을 형성시킨 2층 단면구조 복합재료 시편의 열전도도는 AlN 후막의 두께가 증가할수록 선형적으로 감소하였다. 측정한 복합재료의 열전도도는 두께가 $53{\mu}m$과 $163{\mu}m$일 때, 각각 $114.1W/m{\cdot}K$와 $72.3W/m{\cdot}K$로 나타났다. 또한, 스크린 인쇄한 AlN 후막의 열전도도를 열전도비저항에 대한 혼합법칙을 적용해서 평가하였다. AlN 후막의 두께가 $53{\mu}m$와 $163{\mu}m$인 경우, 스크린 인쇄한 AlN 후막의 열전도도는 각각 $9.35W/m{\cdot}K$와 $12.40W/m{\cdot}K$로 나타났다.

• 한국전기전자재료학회논문지
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• 제27권10호
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• pp.623-629
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• 2014

For the semiconductor device safety from over current in the digital electronic circuit system must be surely designed that it's surface mount type micro fuse device. In this paper, We has analysed to the fusing character of micro fuse as a function changed thickness of thermosetting ink epoxy. To the change of thermosetting ink epoxy thickness with in production lot, in the electrically character (fusing test in the 2 multiple over current and 10 multiple over current, surface temperature test in the 1.25 multiple over current) of micro fuse has been tested. According to the electrically character result, changed thickness of thermosetting ink epoxy in designed micro fuse withheld direct effect in both end resistance changes. Also, because high thermal energy in the micro fuse test of over current was occurred to effect such as thermal runaway and explosion. Therefore, screen printing process in the design of micro fuse using thermosetting ink epoxy is very important for production quality improvement.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.139-142
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• 2002

Characteristics of piezoelectric thick films prepared by screen printing were investigated. The piezoelectric thick films were fabricated using Pb(Al,Nb)O$_3$-Pb(Zr,Ti)O$_3$ system on Si-substrate. The fabricated thick films were burned out at 400$^{\circ}C$ and sintered at 850∼1000$^{\circ}C$ using rapid thermal annealing(RTA) precess. The thickness of piezoelectric thick films were 10$\mu\textrm{m}$. PAN-PZT thick film on Ag-Pd/SiO$_2$/Si prepared at 900$^{\circ}C$/1300sec had remanent polarization of 19.70 ${\mu}$C/$\textrm{cm}^2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.685-688
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• 2003

[ $(Ba,Sr,Ca)TiO_3$ ] powders, prepared by the sol-gel method, were mixed with an organic vehicle and the BSCT thick films were fabricated by the screen printing techniques on alumina substrates. The grain size decreased with increasing amounts of $MnO_2$, and the BSCT(50/40/10) thick film doped with 1wt% $MnO_2$ showed a value of 6.5mm. The thickness of thick films by four-cycle on printing/drying was approximately 100mm. The relative dielectric constant, dielectric loss and tunability of the BSCT(S0/40/10) thick films doped with 1.0wt% $MnO_2$ were 1296, 0.61% and 11.18%, respectively.

• 한국전기전자재료학회논문지
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• 제18권6호
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• pp.550-553
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• 2005

[ $Pb(Zr_{0.2}Ti_{0.8})O_3$ ] powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT thick films were fabricated by the screen-printing techniques on Pt/alumina substrates. The structural and dielectric properties were examined as a function of sintering temperature. The particle size distribution of the powder is bimodal with the mean particle size of about $1.2\;{\mu}m$. The average grain size of the PZT thick films sintered above $1000^{\circ}C$ was about $3.1\;{\mu}m$ and the thickness of the specimens was approximately $41\;{\mu}m$. The relative dielectric constant and dielectric loss of the thick films sintered at $1050^{\circ}C$ were 337 and $1.24\%$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.200-201
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• 2005

PFerroelectric PZT heterolayered thick films were fabricated by the alkoxide-based sol-gel method. PZT(40/60) and PZT(60/40) paste were made and alternately screen-printed on the $Al_2O_3$ substrates. We have introduced a press-treatment to obtain a good densification of screen printed films. The porosity of the thick films were decreased with increasing the applied pressure and the thick films pressed at 0.6 ton/$cm^2$ showed the dense microstructure and thickness of about 76${\mu}m$. The remanent polarization and coercive field increased with increasing applied pressure and the values for the PZT thick films pressed at 0.6 ton/$cm^2$ were 17.04${\mu}Ccm^2$, 78.09 kV/cm, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.77-79
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• 1999

Bi$_2$Sr$_2$CaCu$_2$O(Bi-2212) thick films were fabricated on Y211 substrate by screen printing method. The aim of the study was to fabricate superconducting thick films on Y211 substrate by MPMG process. For this study, patterned samples by screen printing method were heated with MPMG process. The thickness of Bi2212 on substrate was about 20 ${\mu}{\textrm}{m}$ and these samples showed many Bi- 2212 phases.

• Transactions on Electrical and Electronic Materials
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• 제6권2호
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• pp.35-38
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• 2005

Pb(Zr$_{0.8}$Ti$_{0.2}$)O$_{3}$ powders, prepared by the sol-gel method, were mixed with an organic vehicle and the PZT thick films were fabricated by the screen-printing techniques on Pt/Ah03 substrates. The structural properties were examined as a function of sintering temperature. The particle size distribution of the PZT powder derived from the sol-gel process is uniform with the mean particle size of about 2.6 m. As a result of the DTA, the formation of the polycrystalline perovskite phase was observed at around $890^{circ}$CC. In the X-ray diffraction analysis, all PZT thick films showed a perovskite polycrystalline structure without a pyrochlore phase. The perovskite crystallization temperature of PZT thick films was about $890^{circ}$C. The average thickness of the PZT thick films was approximately 80-90 m.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.142-145
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• 2004

[ $Pb(Zr_{0.8}Ti_{0.2})TiO_3$ ] powder were prepared by the sol-gel method using a solution of Pb-acetate, Zr n-propoxide and Ti iso-propoxide. PZT thick film were fabricated by the screen printing method. and then the structural properties as a function of the sintering temperature were studied. PZT film thickness, obtained by four screen printing, was approximately $70{\sim}90{\mu}m$. The PZT thick film, sintered at $1050^{\circ}C$, showed deuse and uniform grain stractures and percent porosity of the thick film was 25.43%.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.656-658
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• 2004

Pb$(Zr_{0.8}Ti_{0.2})TiO_3$ powder were prepared by the sol-gel method using a solution of Pb-acetate, Zr n-propoxide and Ti iso-propoxide. PZT thick film were fabricated by the screen printing method, and the structural and ferroelectric properties asafunting of the sintering temperature were studied. PZT film thickness, obtained by four screen printing, was approximately $70\sim90{\mu}m$. The relative dielectric constant and the dielectric loss of the PZT thick film sintered at $1050^{\circ}C$t were approximately 676 and 1.4%, respectively. The remanent polarization and the coercive field of the PZT thick film sintered at $1050^{\circ}C$ were $21.15{\mu}C/cm^2$ and 10.1 kV/cm, mapetively