• Journal of Acupuncture Research
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• v.29 no.4
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• pp.1-6
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• 2012

Objectives : This study was done for reporting the effect of scratching method on patients with positional vertigo. Methods : We investigated 22 cases of patients with dizziness, and devided patients into two groups : We treated one group by complex oriental medical treatment with scratching method therapy, and did the other group by complex oriental medical treatment without scratching method therapy. Korean version of dizziness handicap inventory at baseline and final were used for evaluating the effect of the treatment. Results : 1. In scratching method group and non-scratching method group, compared with baseline, at final, Korean version of dizziness handicap inventory was significantly decreased. 2. At final, scratching method group showed significant decrease on Korean version of dizziness handicap inventory compared with non-scratching method group. Conclusions : Scratching method showed significant improvement in dizziness.

• Journal of Acupuncture Research
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• v.28 no.5
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• pp.1-7
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• 2011

Objectives : This study was done for reporting the effect of scratching method on patients with peripheral facial palsy. Methods : We investigated 34 cases of patients with peripheral facial paralysis, and devided patients into two groups : We treated one group by complex oriental medical treatment with scratching method therapy, and did the other group by complex oriental medical treatment without scratching method therapy. gross grading system of House-Brackmann(HB score) and Yanagihara's unweighed grading system(Y score) at baseline and final were used for evaluating the effect of the treatment. Results : 1. In scratching method group and non-scratching method group, compared with baseline, at final, HB score was significantly decreased and Y score was significantly increased. 2. At final, scratching method group showed significant decrease on HB score and significant increase on Y score compared with non-scratching method group. Conclusions : scratching method showed significant improvement in peripheral facial palsy.

• Korean Journal of Crystallography
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• v.12 no.2
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• pp.102-112
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• 2001

The mechanical properties of silicon crystals are important from the viewpoint of wafer and device fabrication processes. It is now widely recognized that silicon undergoes a series of phase transformations when subjected to high pressures, using conventional high pressure devices, such as diamond anvils or indenters. Diamond tip scratching on a silicon surface in the various conditions introduces various kinds of mechanical damage and stressed states. Micro Raman spectroscopy was used to observe the phase transition of single crystal silicon. As results, different morphologies were observed as functions of scratching speed and loading condition and various phases were observed as functions of scratching speed and loading condition.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.104-108
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• 2003

COF(Coefficient Of Friction), AE(Acoustic Emission), micro-cracks and crystal structure of the single crystalline silicon were investigated according to the induced normal load during scratching test. Scratching tests were performed with the loading rate of 100 N/min and various scratching speeds of 1, 3, 6, 10 mm/min from 0 up to 30 N of the maximum normal load. In consequence, COF, AE and crack density were observed to increase with increasing normal load or increasing scratching speed. Phase transformations from the silicon diamond structure to other structures were observed in the scratched grooves for the slow scratching speeds using micro-Raman spectroscopy.

• The Journal of Korean Medicine Ophthalmology and Otolaryngology and Dermatology
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• v.20 no.2 s.33
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• pp.142-150
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• 2007

Objectives : This study was carried out to investigate the latest study tendency in mouse model of skin pruritus published since 2005 and to arrange various experimental methods. Methods : We examined the journal(such as Experimental dermatology and British journal of dermatology) and in Pubmed since 2005, regarded pruritus and scratching behavior model as key words. Results and Conclusion : 1. BALB/c, hairless, NC/Nga and ICR mice were the most used in scratching behavior model. According to scratching-induced agents. we need to select experimental mice. 2. There are various methods inducing skin pruritus; by cohabitation with NC/Nga mice having severe skin lesions, by injection intradermally(or subcutaneously) with agent inducing inflammation, by inducing contact dermatitis with TNCB, TNFB, destruction of skin barrier and by transgenic mice. 3. Injection intradermally(or subcutaneously) with agent inducing inflammation is the most used out of methods inducing skin pruritus. Compound 48/80, histamine, substance P and others(chloroquine, serotonin, carrageenin, TPA etc.) were included in agents inducing inflammation and pruritus in skin pruritus model. 4. Video camera, SCLABA system, MicroAct and acoustic evaluation system were included in evaluation methods of scratching behavior mouse model.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.1660-1663
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• 2005

Unwanted vibrations are inevitably induced in other directions when pure unidirectional vibration motion is desired for the vertical scratching mechanism. Pure vertical vibration motion of the scratching machine can be obtained by driving identical two motors with symmetrically positioned eccentric unbalance masses. The desired optimal condition for driving pure vertical vibration for the scratching machine is assumed to be the resonance condition in that direction. Imposing the flexibility of the scratching machine in the horizontal direction, we can find out the amount of horizontal vibration component while maintaining the resonance in vertical direction. The desired stiffness in horizontal direction which produces the minimum vibration in horizontal direction are defined which can be used as a guide line to design the supporting structure of the scratching machine.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.3 no.2
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• pp.53-59
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• 2004

In this paper, we propose a new multi-purpose Scanning Force Microscope (SFM) system. The system can be used for nano/micro-scratching, in-process profile measurement, and observation of potential surface defects which occur during the scratching in air or liquid. Experimental results of nano/micro-scratching show that the smallest scratching depth can be controlled to be 10nm, which corresponds to the stability of the SFM system. Profile measurements of nano/micro-scratching surfaces have also been performed by the method of on-machine measurement and in-process measurement. Two measurement results were in good agreement with each other. The maximum difference was approximately 10 nm, which was mainly caused by the sampling repeatability error that influences the measurement accuracy Also, micro-defects on the micro-scratching surface were successfully detected by the SFM system. It was confirmed that the number of micro-defects increases when the surface is subjected to a cyclic bending load. The maximum depth was less than 100nm.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2004.11a
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• pp.215-220
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• 2004

Molecular Dynamics(MD) method was used to investigate the change of friction force due to interaction between dislocations and a grain boundary when a Ni tip was scratched on a Cu bicrystal. The substrate comprised a Cu bicrystal containing a vertical$\Sigma=5(210)$ grain boundary. The moving tip for scratching simulation was consisted of fixed Ni atoms emulating a rigid tip. The indentation depth was $3.6\AA$ and the scratching was performed along <110>direction in the first grain. As the scratching was continued, nucleation and propagation of dislocations were observed. In the early stage, the grain boundary played as a barrier to moving dislocations and interrupting further dislocation movement with no dislocation resulting in no propagation across the grain boundary. As the Ni tip approached the grain boundary, dislocations were nucleated at the grain boundary and propagated to the second grain. However, stick-slip phenomena that were observed on a single crystal scratching were not observed in the bicrystal. And, instead, irregular oscillation of friction force was observed during the scratching due to the presence of a grain boundary.

• Journal of the Korean Magnetics Society
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• v.4 no.2
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• pp.142-149
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• 1994

The Barkhausen noise was measured as the change of line width(39~1.22 mm) and scratching angle($90^{\circ}~50^{\circ}$) with respect of rolling direction in grain-oriented 3 % Si-Fe of 0.30 and 0.27 mm thickness. The two peak phenomena of the noise envelope observed for non-scratching and scratching of line width 39 mm was explained by large activation energy during $180^{\circ}$ domain wall nucleation and annihilation processes. The amplitudes of the noise envelpoes were decreased as the decrement of scratching line width, but did not almost changed below line width of 9.75 mm. It was explained that the decrease in the envelope with increasing scratching number is associated with lower activation energy of $180^{\circ}$ domain nucleation and annihilation in the vicinity of the scratching area. The noise power was decreased as narrower line width. The dependence of the power on the scratching angle was sharpest decreaded at the 50 angle.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.351-351
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• 2010

Nanoscale patterning using an atomic force microscope tip induced scratching was systematically investigated in AI thin film on 4H-SiC. To identify the effects of the scratch parameters, including the tip loading force, scratch speed, and number of scratches, we varied each parameters and evaluated the major parameter which has intimate relationship with the scale of patterns. In this work, we present the successful demonstration of nano patterning of Al thin film on a 4H-SiC substrate using an AFM scratching and evaluated the scratch parameters on Al/4H-SiC.