• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.2
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• pp.208-214
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• 2024

This reports the electrical properties of single-crystal β-gallium oxide (β-Ga₂O₃) vertical Schottky barrier diodes (SBDs) with a different guard ring structure. The vertical Schottky barrier diodes (V-SBDs) were fabricated with two types guard ring structures, one is with metal deposited on the Al₂O₃ passivation layer (film guard ring: FGR) and the other is with vias formed in the Al₂O₃ passivation layer to allow the metal to contact the Ga₂O₃ surface (metal guard ring: MGR). The forward current values of FGR and MGR V-SBD are 955 mA and 666 mA at 9 V, respectively, and the specific on-resistance (R_on,sp) is 5.9 mΩ·cm² and 29 mΩ·cm². The series resistance (R_s) in the nonlinear section extracted using Cheung's formula was 6 Ω, 4.8 Ω for FGR V-SBD, 10.7 Ω, 6.7 Ω for MGR V-SBD, respectively, and the breakdown voltage was 528 V for FGR V-SBD and 358 V for MGR V-SBD. Degradation of electrical characteristics of the MGR V-SBD can be attributed to the increased reverse leakage current caused by the guard ring structure, and it is expected that the electrical performance can be improved by preventing premature leakage current when an appropriate reverse voltage is applied to the guard ring area. On the other hand, FGR V-SBD shows overall better electrical properties than MGR V-SBD because Al₂O₃ was widely deposited on the Ga₂O₃ surface, which prevent leakage current on the Ga₂O₃ surface.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.8
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• pp.79-85
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• 2004

In this paper, the RF-ID system for ubiquitous tagging applications has been designed, fabricated and analysed. The RF-ID System consists of passive RF-ID Tag and Reader. The passive RF-ID tag consists of rectifier using zero-bias schottky diode which converts RF power into DC power, ID chip, ASK modulator using bipolar transistor and slot loop antenna. We suggest an ASK undulation method using a bipolar transistor to compensate the disadvantage of the conventional PIN diode, which needs large current Also, the slot loop antenna with wider bandwidth than that of the conventional patch antenna is suggested The RF-ID reader consist of patch array antenna, Tx/Rx part and ASK demodulator. We have designed the RF-ID System using EM and circuit simulation tools. According to the measured results, The power level of modulation signal at 1 m from passive RF-ID Tag is -46.76 dBm and frequency of it is 57.2 KHz. The transmitting power of RF-ID reader was 500 mW

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.3
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• pp.621-627
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• 2008

This paper presents a compact and miniaturized power detector utilizing low temperature co-fired ceramics(LTCC) technology for the application in wireless handset system to monitor the transmitting power at the frequency of 824-849MHz. The proposed power detector is composed of detector diode, lumped components for matching network, and LTCC stripline coupler based on LTCC substrate technology. A 20dB LTCC stripline direction coupler is designed and implemented with many bending section in order to reduce the practically occupied area for miniaturization. A zero bias schottky diode is adopted for detector design because of its high speed operation with minimized loss. The measured performances of fabricated detector agree well with the predicted results with a good linearity within the effective input RF power range.

• Journal of electromagnetic engineering and science
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• v.14 no.1
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• pp.25-30
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• 2014

This paper discusses the design of a high frequency Greinacher voltage multiplier as rectifier; it has a greater conversion efficiency and higher output direct current (DC) voltage at high power compared to a simple halfwave rectifier. Multiple diodes in the Greinacher voltage multiplier with distributed circuits consume excited power to the rectifier equally, thereby increasing the overall power capacity of the rectifier system. The proposed rectifiers are a Greinacher voltage doubler and a Greinacher voltage quadrupler, which consist of only diodes and distributed circuits for high frequency applications. For each rectifier, the RF-to-DC conversion efficiency and output DC voltage for each input power and load resistance are analyzed for the maximum conversion efficiency. The input power with maximum conversion efficiency of the designed Greinacher voltage doubler and quadrupler is 3 and 7 dB higher, respectively;than that of the halfwave rectifier.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.130-130
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• 2009

This paper describes the temperature characteristics of polycrystalline 3C-SiC micro resonators. The 1.2 ${\mu}m$ and 0.4 ${\mu}m$ thick polycrystalline 3C-SiC cantilever and doubly clamped beam resonators with 60 ~ 100 ${\mu}m$ lengths were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonance was measured by a laser vibrometer in vacuum at temperature range of $25{\sim}200^{\circ}C$. The TCF(Temperature Coefficient of Frequency) of 60, 80 and 100 ${\mu}m$ long cantilever resonators were -9.79, -7.72 and -8.0 $ppm/^{\circ}C$. On the other hand, TCF of 60, 80 and 100 ${\mu}m$ long doubly clamped beam resonators were -15.74, -12.55 and -8.35 $ppm/^{\circ}C$. Therefore, polycrystalline 3C-SiC resonators are suitable with RF MEMS devices and bio/chemical sensor applications in harsh environments.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.8
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• pp.777-783
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• 2009

In this paper, we implemented a wireless power transmission system at 2.45 GHz. The transmission power is limited within 20 dBm according to the ISM frequency regulations. We used two zero-bias Schottky diode and optimized the RF-DC converter for working a clock at 80 cm distance using a receiver with a single antenna and an Rf-DC converter to reduce parts and cost compared to previously reported literatures.

• ETRI Journal
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• v.30 no.6
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• pp.826-832
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• 2008

The metal-ferroelectric-metal (MFM) capacitor in the ferroelectric random access memory (FeRAM) embedded RFID chip is used in both the memory cell region and the peripheral analog and digital circuit area for capacitance parameter control. The capacitance value of the MFM capacitor is about 30 times larger than that of conventional capacitors, such as the poly-insulator-poly (PIP) capacitor and the metal-insulator-metal (MIM) capacitor. An MFM capacitor directly stacked over the analog and memory circuit region can share the layout area with the circuit region; thus, the chip size can be reduced by about 60%. The energy transformation efficiency using the MFM scheme is higher than that of the PIP scheme in RFID chips. The radio frequency operational signal properties using circuits with MFM capacitors are almost the same as or better than with PIP, MIM, and MOS capacitors. For the default value specification requirement, the default set cell is designed with an additional dummy cell.

• ETRI Journal
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• v.30 no.3
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• pp.347-354
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• 2008

In this paper, the design of a low-power 512-bit synchronous EEPROM for a passive UHF RFID tag chip is presented. We apply low-power schemes, such as dual power supply voltage (VDD=1.5 V and VDDP=2.5 V), clocked inverter sensing, voltage-up converter, I/O interface, and Dickson charge pump using Schottky diode. An EEPROM is fabricated with the 0.25 ${\mu}m$ EEPROM process. Power dissipation is 32.78 ${\mu}W$ in the read cycle and 78.05 ${\mu}W$ in the write cycle. The layout size is 449.3 ${\mu}m$ ${\times}$ 480.67 ${\mu}m$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.7
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• pp.713-718
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• 2008

A modified broad-band ring hybrid balun with additional two shorted $\lambda$/4 stubs is proposed. The proposed balun is a modified version which has additional two shorted $\lambda$/4 stubs to compensate phase and amplitude imbalances of conventional ring hybrid coupler. To demonstrate the validity of the proposed balun, a balanced Schottky-diode frequency doubler is designed and measured. Measurement data show that the proposed frequency doubler has around 10 dB conversion loss and more than 30 dB fundamental suppression over an input range of $1.6{\sim}2.35\;GHz$.

• Korean Journal of Materials Research
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• v.27 no.7
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• pp.364-368
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• 2017

We performed temperature dependent current-voltage (I-V) measurements to characterize the electrical properties of $Au/Al_2O_3/n-Ge$ metal-insulator-semiconductor (MIS) diodes prepared with and without $H_2O$ prepulse treatment by atomic layer deposition (ALD). By considering the thickness of the $Al_2O_3$ interlayer, the barrier height for the treated sample was found to be 0.61 eV, similar to those of Au/n-Ge Schottky diodes. The thermionic emission (TE) model with barrier inhomogeneity explained the final state of the treated sample well. Compared to the untreated sample, the treated sample was found to have improved diode characteristics for both forward and reverse bias conditions. These results were associated with the reduction of charge trapping and interface states near the $Ge/Al_2O_3$ interface.