• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.10
• /
• pp.877-882
• /
• 2005

In order to fabricate a high breakdown SiC-SBD (Schottky barrier diode), we investigate an effect on metal guard ring (MGR) in breakdown characteristics of the SiC-SBD. The breakdown characteristics of MGR-type SiC-SBD is significantly dependent on both the guard ring metal and the alloying time of guard ring metal. The breakdown characteristics of MGR-type SiC-SBDs are essentially improved as the alloying time of guard ring metal is increased. The SiC-SBD without MGR shows less than 200 V breakdown voltage, while the SiC-SBD with Al MGR shows approximately 700 V breakdown voltage. The improvement in breakdown characteristics is attributed to the field edge termination effect by the MGR, which is similar to an implanted guard ring-type SiC-SBD. There are two breakdown origins in the MGR-type SiC-SBD. One is due to a crystal defects, such as micropipes and stacking faults, in the Epi-layers and the SiC substrate, and occurs at a lower electric field. The other is due to the destruction of guard ring metal, which occurs at a higher electric field. The demolition of guard ring metal is due to the electric field concentration at an edge of Schottky contact metal.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07a
• /
• pp.409-412
• /
• 2004

Edge termination technique is essential fer the fabrication of high volage devices. A proper edge termination technique is also needed in the fabrication of Silicon Carbide power devices for obtaining a stable high blocking voltage properties. Among the many techniques, the field plate formation is the easiest one that can utilize it for commercial usage. The growth of thick thermal oxide is difficult for SiC, however. In this paper, 6A grade SiC schottky barrier diodes(SBD) were fabricated with field plate edge termination. The oxides which is field plate were formed various methods such as dry oxidation, 10% $N_2O$ nitrided oxidation and PECVD deposition. The reverse characteristics of the SiC SBD with various oxide field plate were investigated.

• Korean Journal of Materials Research
• /
• v.31 no.2
• /
• pp.97-100
• /
• 2021

We report the effect of Standard Clean-1 (SC-1) cleaning to remove residual Ti layers after silicidation to prevent Al diffusion into Si wafer for Ti Schottky barrier diodes (Ti-SBD). Regardless of SC-1 cleaning, the presence of oxygen atoms is confirmed by Auger electron spectroscopy (AES) depth profile analysis between Al and Ti-silicide layers. Al atoms at the interface of Ti-silicide and Si wafer are detected, when the SC-1 cleaning is not conducted after rapid thermal annealing. On the other hand, Al atoms are not found at the interface of Ti-SBD after executing SC-1 cleaning. Al diffusion into the interface between Ti-silicide and Si wafer may be caused by thermal stress at the Ti-silicide layer. The difference of the thermal expansion coefficients of Ti and Ti-silicide gives rise to thermal stress at the interface during the Al layer deposition and sintering processes. Although a longer sintering time is conducted for Ti-SBD, the Al atoms do not diffuse into the surface of the Si wafer. Therefore, the removal of the Ti layer by the SC-1 cleaning can prevent Al diffusion for Ti-SBD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.834-838
• /
• 2002

In this paper, we have fabricated 4H-SiC schottky diodes utilizing a metal-oxide overlap structure for electric filed termination. The barrier height and Ideality factor were measured by current-voltage, capacitance-voltage characteristics. Schottky barrier height(SBH) were 1.41ev for Ni and 1.35eV for Pt, 1.52eV for Pt/Ti at room temperature and Pt/Ti Schottky diode exhibited Ideality factor was 1.06 to 1.4 in the range of $25^{\circ}C{\sim}200^{\circ}C$. To improve the reverse bias characteristics, an edge termination technique is employed for Pt/Ti/4H-SiC Schottky rectifiers and the device show excellent characteristics with higher blocking voltage up to 780V compared with unterminated devices.

• Proceedings of the KIEE Conference
• /
• 2004.07c
• /
• pp.1555-1557
• /
• 2004

The Pt-doped $SnO_2$ thin film for CO sensor applications obtained by RF sputtering from a target of the same compound in an Ar-$O_2$ atmosphere. Pt-SnO2-SiC Schottky diode detection of CO gas Cause the remarkable change in electrical resistivity of the semiconductor. the good gas sensitivity is shown when annealing condition is 600$^{\circ}C$, 1hr in RTP and detected temperature is 350$^{\circ}C$.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.1267-1270
• /
• 2006

Organic light-emitting diode (OLED) display panel with $64\;{\times}\;64$ pixels utilizing the charge-pump (CP) pixel addressing method was fabricated using conventional thin-film processes. Each pixel consists of a-Si:H Schottky diode and $ITO/SiO_2/ITO$ capacitor. It is shown that CP-OLED is technically feasible for information display and a driving voltage below $4V_{pp}$ is enough for nominal operation.

• Proceedings of the KIEE Conference
• /
• 1999.07f
• /
• pp.2568-2571
• /
• 1999

Recently, new trend in telecommunication device is to apply low voltage, about 3.3V-1.5V. However, it is undesirable in view of high efficiency and power desity which is the most important requirement in the distributed power system. Rectification loss in the output stage in on-board converter for distributed power system are constrained to obtain high efficience at low output voltage power suppies. This paper is investigated conduction power loss in synchronouss rectifier with a parallel -connected Schottky Barrier Diode(SBD). Conduction losses are calculated for both MOSFET and SBD respectively. The SBD conduction power loss dissipates more than the MOSFET rectifier conduction power loss.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.04b
• /
• pp.21-22
• /
• 2009

We proposed circular AlGaN/GaN schottky barrier diode, which has no mesa structure near the current path. Proposed device showed low leakage current of 10 nA/mm at -100 V while that of the rectangular device was 34 nA/mm at the same condition. Proposed circular AlGaN/GaN SBD showed high forward current of 88.61 mA at 3.5 V while that of the conventional device was 14.1 mA at the same condition.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.49 no.2
• /
• pp.78-81
• /
• 2000

The closed-form analytic solutions for the breakdown voltage of 6H-SiC RTD(silicon carbide reachthrough diode) having metal$-n^--n^+$ Schottky structure or $p^+-n^--n^+$, are successfully derived by solving impact ionization integral using an effective ionization coefficient. For the lightly doped n- epitaxial layer, the breakdown voltage of SiC RTD are nearly constant with the increased doping concentration while the breakdown voltages decrease for the heavily doped epitaxial layer.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
• /
• 2000.11a
• /
• pp.248-251
• /
• 2000

본 논문에서는 SIEMENS사의 BAS125 소자의 I-V curve에서 RF신호를 고려하여 파라미터를 추출하였으며, 바이어스에 독립적인 외부소자를 추출하고, 바이어스에 종속적인 접합캐패시터를 S-parameter를 fitting하여 추출하였다.