• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.3
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• pp.111-114
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• 2005

Organic monolayers were fabricated onto Au(l l l) substrate by self-assembly method using dipyridinium. Also, organic single molecule in the organic monolayers was selected to measure the current-voltage (I-V) curves by using the ultrahigh vacuum scanning tunneling microscopy (UHV-STM). The organic molecule used in the experiment was dipyridinium dithioacetate, which contains thiol functional group and can be self-assembled easily onto Au(l l l) substrate. The concentration of dipyridinium dithioacetate for self-assembly procedure was I [mM/L]. To confirm the formation of self-assembled mono layers (SAMs), the differences of thickness of the self-assembled organic monolayers were observed by using an ellipsometer, and the morphology and I-V curves of the SAMs were investigated by using UHV-STM. The applied voltages were from -2 [V] to +2 [V], temperature was 300 [K]. The vacuum for measuring current of the organic single molecule was 6 $\times$ 10$^{-8}$ [Torr]. As a result, properties of the negative differential resistance (NDR) in constant voltage were found.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.3
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• pp.115-118
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• 2005

Currently, molecular devices are reported utilizing active self-assembled monolayers (SAMs) containing the nitro group as the active component, which has active redox centers [1]. SAMs are ordered molecular structures formed by the adsorption of an active surfactant on a solid surface. The molecules will be spontaneously oriented toward the substrate surface and form an energetically favorable ordered layer. During this process, the surface-active head group of the molecule chemically reacts with and chemisorbs onto the substrate In this paper, the electrical properties of the 4'4- di(ethynylphenyl)-2'-nitro-1-benzenethiolate was confirmed. This material is well known as a conducting molecule having possible application to molecular level negative differential resistance (NDR) device. To deposit the self-assembly monolayers onto the gold electrode, the prefabricated Au(1 l l) substrates were immersed into 0.5[mM/l] self-assembly molecule in THF solution. Then, the electrical properties and surface morphologies of 4' 4-di(ethynylphenyl)-2' -nitro-1-benzenethiolate were measured by using the ultra-high vacuum scanning tunneling microscopy (UHV-STM).

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.146-146
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• 2000

We have studied the etching of Si(100)-2xl by Cl and Br, using scanning tunneling microscopy to obtain morphological information that can be related to reaction and desorption pathways. Clean surfaces were exposed to molecular halogens at room temperature to produce well-defined chemisorption structures for coverages in the range 0.2-1.0 ML. Heating to 750-750 K induced etching by thermal desorpton. Analysis of the halogen concentration before and after heating indicated that the rates of desorption for SICl2 or SiBr2 were greatest for intermediate coverages and that etching was suppressed as saturation was reached. Hence, desorption is not simply proportional to the concentration of species that can form adsorbed precursors SiX2(a). Instead, it is directly coupled to the creation of monomer vacancies adjacent to the SiX2 (a) unit because this increases the lifetime of the excited state and increases the likelihood of its desorption. Increasing the surface concentration of halogens reduces the rate of vacancy formation. We show that these rates are also affected by a re-dimerization process in the high temperature Br-stabilized Si(100)-3xl reconstruction that increases the likelihood of siBr2(a) formation and enhances its desorption. I will also discuss recent result for F etching on Si(100)-2xl.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.340-340
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• 2010

Various structures of vacancy defects in graphene layers and carbon nanotubes have been reported by high resolution transmission electron microscope (HR-TEM) and those arouse an interest of reconstruction processes of vacancy defects. In this talk, we present reconstruction processes of vacancy defects in a graphene and a carbon nanotube by tight-binding molecular dynamics (TBMD) simulations and by first principles total energy calculations. We found that a structure of a dislocation defect with two pentagon-heptagon (5-7) pairs in graphene becomes more stable than other structures when the number of vacancy units is ten and over. The simulation study of scanning tunneling microscopy reveals that the pentagon-heptagon pair defects perturb the wavefunction of electrons near Fermi level to produce the $\sqrt{3}\;{\times}\;\sqrt{3}$ superlattice pattern, which is in excellent agreement with experiment. It is also observed in our tight-binding molecular dynamics simulation that 5-7 pair defects play a very important role in vacancy reconstruction in a graphene layer and carbon nanotubes.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.364-364
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• 2010

Defects existing on the clean Si(5 5 12)-$2{\times}1$, composed of one-dimensional(1-D) structures such as honeycomb (H) chain, $\pi$-bonded ($\pi$) chains, dimer-adatom (D-A) row, and tetramer (T) row, have been investigated by scanning tunneling microscopy (STM). It is found that the defects can be classified to two categories: One is originated from phase boundaries in D-A and T rows having $2{\times}$ periodicities, by which buckling directions are reversed, and the other is caused by missing atoms on $\pi$ chains, D-A rows, and T rows. All these defects are symmetric with respect to the [6 6 $\bar{5}$] direction, which is due to one-dimensional symmetry along the [1 $\bar{1}$ 0] direction. Especially it is worth noticing that on H chains none of such defects exist, which implies that the H chain is energetically the most stable among 1-D structures existing on Si(5 5 12)-$2{\times}1$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.355-355
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• 2010

The epitaxial growth of MgO film on Fe(001) has been investigated by scanning tunneling microscopy (STM). After confirming the clean Fe(001)-c($2{\times}2$) substrate by STM, Mg was deposited at room temperature (RT) under $O_2$ partial pressure of $10^{-7}\;Torr$. The MgO was grown as clusters, not as an epilayer even after postannealing at $400^{\circ}C$, as shown in Figure (a). On the contrary, when Mg was deposited on Fe(001)-c($2{\times}2$) at RT and post-oxidized through exposing $O_2$ at partial pressure $10^{-7}\;Torr$, the thin-layered film with some clusters was formed. Extended-annealing at $400^{\circ}C$ reduced the cluster density, and finally the single and epitaxial MgO-c($2{\times}2$) film was formed on Fe(001)-c($2{\times}2$) as shown in Figure (b). This ultrathin MgO film formed on Fe is expected to be applied to many technological applications, such as catalysis, microelectronics, and magnetic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.367-367
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• 2010

The adsorption configurations of S-proline on Ge(100) were studied using scanning tunneling microscopy (STM), density functional theory (DFT) calculations, and high-resolution core-level photoemission spectroscopy (HRCLPES). We identified three adsorption structures of S-proline on Ge(100) through analysis of the STM images, DFT calculations, and HRCLPES results: (i) an 'intrarow O - H dissociated and N dative bonded structure', (ii) an 'O - H dissociation structure', and (iii) an 'N dative bonded structure'. Moreover, because adsorption through the N atom of S-proline produces a new chiral center due to symmetry reduction by N dative bonding, the adsorption configurations have either (R,S) or (S,S) chirality, yielding an (R,S)-'intrarow O - H dissociated and N dative bonded structure' and an (R,S)-'N dative bonded structure', with a preference for reaction at the Re face. This work presents a novel method for generating stereoselective attachment using S-proline molecules adsorbed onto a Ge(100) surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.339-339
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• 2010

The metallic nanoparticles (Pt, Au, Ag. Cu, etc.) supported on ceria-titania mixed oxide exhibit a high catalytic activity for the water gas shift reaction ($H_2O\;+\;CO\;{\leftrightarrow}\;H_2\;+\;CO_2$) and the CO oxidation ($O_2\;+\;2CO\;{\leftrightarrow}\;2CO_2$). It has been speculated that the high catalytic activity is related to the easy exchange of the oxidation states of ceria ($Ce^{3+}$ and $Ce^{4+}$) on titania, but very little is known about the ceria titanium interaction, the growth mode of metal on ceria titania complex, and the reaction mechanism. In this work, the growth of $CeO_x$ and Au/$CeO_x$ on rutile $TiO_2$(110) have been investigated by Scanning Tunneling Microscopy (STM), Photoelectron Spectroscopy (PES), and DFT calculation. In the $CeO_x/TiO_2$(110) systems, the titania substrate imposes on the ceria nanoparticles non-typical coordination modes, favoring a $Ce^{3+}$ oxidation state and enhancing their chemical activity. The deposition of metal on a $CeO_x/TiO_2$(110) substrate generates much smaller nanoparticles with an extremely high activity. We proposed a mechanism that there is a strong coupling of the chemical properties of the admetal and the mixed-metal oxide: The adsorption and dissociation of water probably take place on the oxide, CO adsorbs on the admetal nanoparticles, and all subsequent reaction steps occur at the oxide-admetal interface.

• Journal of Electrochemical Science and Technology
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• v.12 no.3
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• pp.323-329
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• 2021

This work presents a contrasting behavior of formic acid oxidation (FAO) on the Pt and Bi deposits on different Pt substrates. Using irreversible adsorption method, Bi and Pt were sequentially deposited on Pt electrodes of nanoparticle (Pt NP) and disk (Pt disk). The deposited layers of Bi and Pt on the Pt substrates were characterized with X-ray photoelectron spectroscopy, transmission microscopy and scanning tunneling microscopy. The electrochemical behaviors and FAO enhancements of Pt NP and Pt disk with deposited Bi only (i.e., Bi/Pt NP and Bi/Pt disk), were similar to each other. However, additional deposition of Pt on Bi/Pt NP and Bi/Pt disk (i.e., Pt/Bi/Pt NP and Pt/Bi/Pt disk) changed the electrochemical behavior and FAO activity in different ways depending on the shapes of the Pt substrates. With Pt/Bi/Pt NP, the hydrogen adsorption was suppressed and the surface oxidation of Pt was enhanced; while with Pt/Bi/Pt disk, the opposite behavior was observed. This difference was interpreted as a stronger interaction between the deposited Bi and Pt on Pt NP than that on Pt disk. The FAO performance on Pt/Bi/Pt NP is much better than that on Pt/Bi/Pt disk, most likely due to the difference in the interaction between the deposited Pt and Bi depending on the shapes of Pt substrates. In designing FAO electrochemical catalysts using Pt and Bi, the shape of a Pt substrate was concluded to be critically considered.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.139-141
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• 2005

It is possble to study charge transfer property which is caused by height variation because we can see the organic materials barrier height and STM tip by organic materials energy band gap. Here, we investigated the negative differential resistance(NDR) and charge transfer property of self-assembled 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene, which has been well known as a conducting molecule. Self-assembly monolayers(SAMs) were prepared on Au(111), which had been thermally deposited onto pre-treatment($H_{2}SO_{4}:H_{2}O_{2}$=3:1) Si. The Au substrate was exposed to a 1 mM/l solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing the sample, it was exposed to a $0.1{\mu}M/1$ solution of 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene in dimethylformamide(DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. After the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_{2}Cl_{2}$, and finally blown dry with $N_2$. Under these conditions, we measured electrical properties of self-assembly monolayers(SAMs) using ultra high vacuum scanning tunneling microscopy(UHV-STM). The applied voltages were from -1.50 V to -1.20 V with 298 K temperature. The vacuum condition is $6{\times}10^{-8}$ Torr. As a result, we found that NDR and charge transfer property by a little change of height when the voltage is applied between STM tip and electrode.