• Journal of the Korean Society for Precision Engineering
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• v.23 no.8 s.185
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• pp.72-79
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• 2006

We measured grating pitch standards using optical diffractometry and analyzed measurement uncertainty. Grating pitch standards have been used widely as a magnification standard for a scanning electron microscope (SEM) and a scanning probe microscope (SPM). Thus, to establish the meter-traceability in nano-metrology using SPM and SEM, it is important to certify grating pitch standards accurately. The optical diffractometer consists of two laser sources, argon ion laser (488 nm) and He-Cd laser (325 nm), optics to make an incident beam, a precision rotary table and a quadrant photo-diode to detect the position of diffraction beam. The precision rotary table incorporates a calibrated angle encoder, enabling the precise and accurate measurement of diffraction angle. Applying the measured diffraction angle to the grating equation, the mean pitch of grating specimen can be obtained very accurately. The pitch and orthogonality of two-dimensional grating pitch standards were measured, and the measurement uncertainty was analyzed according to the Guide to the Expression of Uncertainty in Measurement. The expanded uncertainties (k = 2) in pitch measurement were less than 0.015 nm and 0.03 nm for the specimen with the nominal pitch of 300 nm and 1000 nm. In the case of orthogonality measurement, the expanded uncertainties were less than $0.006^{\circ}$. In the pitch measurement, the main uncertainty source was the variation of measured pitch values according to the diffraction order. The measurement results show that the optical diffractometry can be used as an effective calibration tool for grating pitch standards.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.12
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• pp.1058-1063
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• 2015

In this article, we propose a near field microwave scanning probe structure in which two short conducting rods are attached to the center of the ridged(H-type) aperture, thereby reducing significantly the beam spot area while maintaining the high transmission efficiency through the output coupling H-type(ridged) aperture. Here the two short parallel conducting rods seem to play an important role of concentrating the transmitted electromagnetic energy through the H-type aperture and so reducing the beam area for high resolution. For validation of the proposed theory, the near field waveguide probe is fabricated according to the simulated results and its return loss characteristics versus frequencies are measured. The comparison between theory and experiment is seen to be in good agreements.

• Korean Chemical Engineering Research
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• v.54 no.3
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• pp.410-418
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• 2016

In this study, we prepared electrically conducting composites using epoxy resin of diglycidyl ether of bisphenol A (DGEBA) as a matrix, triethylenetetramine (TETA) as a hardener and nickel powder or multi-walled carbon nanotubes (MWCNTs) grafted with $-NH_2$ groups (MWCNT-$NH_2$) as electrically conducting fillers. Electrical conductivity of composite films were measured by coating on the slide glass with a doctor blade. We measured modification reactions of MWCNT and reaction of MWCNT-$NH_2$ with DGEBA epoxy resin by fourier transform infrared spectrometer (FTIR), thermogravimetric analyzer (TGA) and elemental analyzer (EA). Morphology of composites was investigated by scanning electron microscope (SEM) and sheet resistances of composites were measured by 4-point probe. We found $(9.87{\pm}1.09){\times}10^4{\Omega}/sq$ of sheet resistance for epoxy composite containing both 40 wt% nickel powder and 0.5 wt% of MWCNT-$NH_2$ as fillers, equivalent to epoxy composite containing 53.3 wt% nickel powder only as a filler.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.05a
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• pp.207-214
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• 2002

Nano adhesion between SPM (scanning probe microscope) tips and $DDPO_{4}$ (dodecylphosphoric acid ester) and $ODPO_{4}$ (octadecylphosphoric acid ester) SAM (self-assembled monolayer) was experimentally studied. Tests were performed to measure the nano adhesion and friction in both AFM(atomic force microscope) and LFM(lateral force microscope) modes with the applied normal load. $DDPO_{4}$ and $ODPO_{4}$ SAM were formed on TiMe and TiOx surfaces. TiMe and TiOx were coated on the Si wafer by ion sputtering. Adhesion and friction of $DDPO_{4}$ and $ODPO_{4}$ SAM surfaces were compared with those of OTS (octadecyltrichlorosilane) SAM and DLC surfaces. $DDPO_{4}$ and $ODPO_{4}$ SAM converted the TiMe and TiOx surfaces to be hydrophobic. When the surface was hydrophobic, the adhesion and friction forces were found lower than those of bare surfaces. Work of adhesion was also discussed to explain how the surface was converted into hydrophobic. Results also showed that tribological characteristics of $DDPO_{4}$ and $ODPO_{4}$ had good properties in the adhesion, friction, wetting angle and work of adhesion. $DDPO_{4}$ and $ODPO_{4}$ SAM could be one of the candidates for the bio-MEMS elements.

• International Journal of Korean Welding Society
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• v.1 no.1
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• pp.58-62
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• 2001

The surface of AC8A Ah alloy was modified by adding the Cu powder using a Plasma Transferred Arc (PTA) welding process. Under the optimum fabricating conditions, the modified surface of AC8A Ah alloy was observed to possess the sound microstructure with a minimum porosity. Hardness and wear resistance properties of the as-fabricated alloy were compared with those of the 76 heat-treated one. In case of the as-fabricated alloy, the hardness of the modified layer was twice that of the matrix region. Although significant increase in the hardness of the matrix region was observed after T6 heat treatment, the hardness of the modified layer was not observed to change. The wear resistance of the modified layer was significantly increased compared to that of the matrix region. The microstructure of a weld zone and the matrix region were investigated using the optical microscope, scanning electron microscope (SEM), electron probe microanalysis (EPMA), and transmission electron microscope (TEM). The primary and eutectic silicon in the weld zone were finer and more curved than in the matrix region, while some precipitates has had been found therein. According to the TEM observation, the predominant precipitate present in the weld zone was the $\theta$'phase, which is precipitated during cooling by rapid solidification in PTA welding process. Improvement of hardness and wear properties in the weld zone in the as-fabricated condition can be explained based on the presence of $\theta$’precipitates and fine primary and eutectic silicon distribution.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.1
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• pp.16-22
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• 2008

We fabricated thermally-evaporated 10 nm-Ni/30 nm and 70 nm Poly-Si/200 nm-$SiO_2/Si$ structures to investigate the thermal stability of nickel silicides formed by rapid thermal annealing(RTA) of the temperature of $300{\sim}1100^{\circ}C$ for 40 seconds. We employed for a four-point tester, field emission scanning electron microscope(FE-SEM), transmission electron microscope(TEM), high resolution X-ray diffraction(HRIXRD), and scanning probe microscope(SPM) in order to examine the sheet resistance, in-plane microstructure, cross-sectional microstructure evolution, phase transformation, and surface roughness, respectively. The silicide on 30 nm polysilicon substrate was stable at temperature up to $900^{\circ}C$, while the one on 70 nm substrate showed the conventional $NiSi_2$ transformation temperature of $700^{\circ}C$. The HRXRD result also supported the existence of NiSi-phase up to $900^{\circ}C$ for the Ni silicide on the 30 nm polysilicon substrate. FE-SEM and TEM confirmed that 40 nm thick uniform silicide layer and island-like agglomerated silicide phase of $1{\mu}m$ pitch without residual polysilicon were formed on 30 nm polysilicon substrate at $700^{\circ}C\;and\;1000^{\circ}C$, respectively. All silicides were nonuniform and formed on top of the residual polysilicon for 70 nm polysilicon substrates. Through SPM analysis, we confirmed the surface roughness was below 17 nm, which implied the advantage on FUSI gate of CMOS process. Our results imply that we may tune the thermal stability of nickel monosilicide by reducing the height of polysilicon gate.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.449-449
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• 2013

최근 반도체 소자의 집적회로는 점점 복잡해지고 있는 반면, 소자의 크기는 작아지고 있으며 그로 인해 패드의 크기가 작아지고 패드사이의 간격 또한 협소해지고 있다. 따라서 웨이퍼 단계에서 제조된 집적회로의 불량여부를 판단하기위한 검사 장비인 프로브카드(Probe Card)의 높은 집적도가 요구되고 있다. 하지만 기존의 MEMS 공법으로 제작되는 프로브 빔은 복잡한 제조 공정과 높은 생산비용, 낮은 집적도의 문제점을 가지고 있다. 본 연구에서는 이러한 문제점을 해결하기 위하여 간단한 제조 공정과 낮은 생산비용, 높은 집적도를 가지는 프로브 빔을 개발하기 위하여 절연절단 방식으로 BeCu (Beryllium-Copper) 프로브 빔을 제작하였다. 낮은 소비 전력으로 우수한 프로브 빔 어레이를 제작하기 위해서 가장 고려해야할 대상은 프로브 빔의 재료와 구조(형상)이다. 절연전단 방식으로 프로브 빔을 형성할 때 요구되는 Fusing current는 프로브 빔의 구조(형상)에 크게 영향을 받는다. 낮은 Fusing current는 소비 전력을 줄여주고, 절연절단으로 형성되는 프로브 빔의 단면(끝)을 날카롭게 하여 프로브 빔과 집적회로의 패드 간의 접촉 저항을 감소시킨다. 프로브 빔의 제작은 BeCu 박판을 빔 형태로 식각하여 제작하였으며, 실리콘 비아 홀(Via hole) 구조의 기판위에 정렬하여 soldering 공정을 통해 실리콘 기판과 BeCu 박판을 접합시켰다. 접합된 프로브 빔의 끝부분을 들어 올린 상태로 전류를 인가하여 stress free 상태로 만들어 내부 응력을 제거하였으며, BeCu 박판에 fusing current를 인가하여 BeCu 박판 프레임으로부터 제거를 하였다. 제작된 프로브 빔의 길이는 1.7 mm, 폭은 $50{\mu}m$, 두께는 $15{\mu}m$, 절단부의 단면적은 1$50{\mu}m^2$로 제작되었다. 그리고 프로브 빔의 절단부의 길이는 $50{\mu}m$ 부터 $90{\mu}m$까지 $10{\mu}m$ 증가시켜 제작되었다. 이후에 절연절단 공정에 요구되는 Fusing current를 측정하였고, 절연절단 후의 절단면의 형상을 SEM (Scanning Electron Microscope)장비를 통하여 확인하였다. 절단부의 길이가 $50{\mu}m$일 때 5.98A의 fusing current를 얻었으며, 절연절단 후 절단부 상태 또한 가장 우수했다. 본 연구에서 제안된 프로브 빔 제작 방법은 프로브카드 및 테스트 소켓(Test socket) 생산에 응용이 가능하리라 기대한다.

• Korean Journal of Materials Research
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• v.17 no.2
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• pp.73-80
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• 2007

For the sub-65 nm CMOS process, it is necessary to develop a new silicide material and an accompanying process that allows the silicide to maintain a low sheet resistance and to have an enhanced thermal stability, thus providing for a wider process window. In this study, we have evaluated the property and unit process compatibility of newly proposed composite silicides. We fabricated composite silicide layers on single crystal silicon from $10nm-Ni_{1-x}Co_x/single-crystalline-Si(100),\;10nm-Ni_{1-x}Co_x/poly-crystalline-\;Si(100)$ wafers (x=0.2, 0.5, and 0.8) with the purpose of mimicking the silicides on source and drain actives and gates. Both the film structures were prepared by thermal evaporation and silicidized by rapid thermal annealing (RTA) from $700^{\circ}C\;to\;1100^{\circ}C$ for 40 seconds. The sheet resistance, cross-sectional microstructure, surface composition, were investigated using a four-point probe, a field emission scanning probe microscope, a field ion beam, an X-ray diffractometer, and an Auger electron depth profi1ing spectroscopy, respectively. Finally, our newly proposed composite silicides had a stable resistance up to $1100^{\circ}C$ and maintained it below $20{\Omega}/Sg$., while the conventional NiSi was limited to $700^{\circ}C$. All our results imply that the composite silicide made from NiCo alloy films may be a possible candidate for 65 nm-CMOS devices.

• Tribology and Lubricants
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• v.20 no.5
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• pp.237-244
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• 2004

Micro/nano tribological characteristics of PTFE coating films were experimentally studied. PTFE (polytetrafluoroethylene) modified polyethylene and low molecular weight PTFE were used as a coating materials. These films were deposited on Si-wafer (100) by IBAD (ion beam assisted deposition) method. The Ar ion beam sputtering was performed to change the surface topography of films using a hollow cathode ion gun under different Ar ion dose conditions in a vacuum chamber. Micro/nano tribological characteristics, water wetting angles and roughness were measured with a micro tribotester, SPM (scanning probe microscope), contact anglemeter and profilometer, respectively. The durability of the films were measured with macro tribotester. Results showed that the PTFE coating surfaces were converted to hydrophobic. The water contact angle of coated surfaces and surface roughness increased with the coating thickness. Adhesion and friction in micro and nano scale were governed by magnitude of normal load in soft material such as PTFE films. As the increase of sputtering time on low molecular weight PTFE films, the surface roughness was increased and nano adhesion and friction were decreased. The nano tribological characteristics of surfaces are mainly improved by chemical modification such as PTFE coating and given a synergy effect by the physical modification such as topographic modification.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.349-349
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• 2012

산화제를 이용 기상중합법을 통해 합성되는 고전도도 Poly (3,4-Ethylenedioxythiophene)(PEDOT) 박막은 OTFT, RFID tag, 또는 연성 디스플레이 같은 분야에 다양한 응용 가능성을 가지고 있으며 이로 인해 최근에 연구가 활발히 진행되고 있다. PEDOT박막의 전극소재로써 가능성은 박막의 중합 정도와 표면 형상에 크게 좌우된다. 특히, Si-웨이퍼 기판 위에 산화제의 균일한 도포 및 산화제 자체의 높은 산도 ($pH{\leq}2$)에 따른 부반응의 억제는 기상중합법을 이용한 PEDOT박막의 합성에 있어 매우 중요하다. PEDOT의 효율적인 중합과 균일한 성장을 위해 산화제에 DUDO 와 PEG-PPG-PEG를 첨가한 혼합 산화제 용액을 제조 기상중합 방법을 통해 PEDOT박막을 제작하였다. 그 결과 산화제만을 사용하여 제작된 박막에 비해 전도도가 최대 3,660 S/cm로 향상된 PEDOT 박막이 합성되었다. 이러한 결과는 PEG-PPG-PEG가 산화제 용액의 균일 도포를 향상시키고 Base Inhibitor로 작용하는 DUDO는 PEDOT 성장 시 중합속도를 조절하고 부반응을 최소화 하여 효율적인 공액 이중 결합의 생성을 촉진한데 주로 기인한다. 따라서 그로인해 조밀하며 마이크로 스케일의 기공이 최소화된 PEDOT박막의 합성이 가능하였다. PEDOT박막의 특성 평가에는 4-point probe, optical microscopy, Field Emission-Scanning Electron Microscope, 등이 사용되었으며 또한 전도도의 향상 원인을 분석하고자 ATR-IR Spectrophotometer를 이용하여 합성된 박막의 작용기를 분석하였다. 이러한 고전도도의 PEDOT 박막이 OTFT의 전극소재로 사용된다면 OTFT소자의 성능 향상에 크게 기여 할 것으로 기대된다.