• Applied Biological Chemistry
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• v.47 no.2
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• pp.170-175
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• 2004

In this paper we studied about Bacillus sp. TBM40-3 producing biosurfactants. The strains were isolated from Taeback Mountain soil and identified as Bacillus sp. by l6S rDNA nucleotides sequence analysis. The TBM40-3 was gram-positive and rod-shaped as observed by field emission scanning microscopy. After the cultivation TBM40-3 in LB broth for 90 h and the surface tension of supernatant was decreased to 29 mN/m. Emulsification activity and stability of crude biosurfactant was measured by using water-immiscible hydrocarbons and oil as substrate. Maximum emulsification activity and stability was obtained from soybean oil. Also, we confirmed that the TBM40-3 producing biosurfactant had an effect on crude oil while showing a superior effect as compared to chemically synthesized surfactants (SDS, Span85, Tween40, Triton X-100). As a result, the Bacillus sp. TBM40-3 producing biosurfactant had potent properties as an emulsifying agent and an emulsion stabilizing agent.

• Restorative Dentistry and Endodontics
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• v.34 no.3
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• pp.192-198
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• 2009

This study was carried out in order to determine in vitro biocompatibility of white mineral trioxide aggregate (MTA), and to compare it with that of the commonly used materials, i. e. calcium hydroxide liner (Dycal), glass ionomer cement (GIC), and Portland cement which has a similar composition of MTA. To assess the biocompatibility of each material, cytotoxicity was examined using MG-63 cells. The degree of cytotoxicity was evaluated by scanning electron microscopy (SEM) and a colorimetric method, based on reduction of the tetrazolium salt 2,3 bis {2methoxy 4nitro 5[(sulfenylamino) carbonyl] 2H tetrazolium hydroxide} (XTT) assay. The results of SEM revealed the cells in contact with GIC, MTA. and Portland cement at 1 and 3 days were apparently healthy. In contrast, cells in the presence of Dycal appeared rounded and detached. In XTT assay, the cellular activities of the cells incubated with all the test materials except Dycal were similar, which corresponded with the SEM observation. The present study supports the view that MTA is a very biocompatible root perforation repair material. It also suggests that cellular response of Portland cement and GIC are very similar to that of MTA.

• Restorative Dentistry and Endodontics
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• v.42 no.3
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• pp.206-215
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• 2017

Objectives: To determine the combined effect of fatigue cyclic loading and thermocycling (CLTC) on the shear bond strength (SBS) of a resin cement to zirconia surfaces that were previously air-abraded with aluminum oxide ($Al_2O_3$) particles at different pressures. Materials and Methods: Seventy-two cuboid zirconia specimens were prepared and randomly assigned to 3 groups according to the air-abrasion pressures (1, 2, and 2.8 bar), and each group was further divided into 2 groups depending on aging parameters (n = 12). Panavia F 2.0 was placed on pre-conditioned zirconia surfaces, and SBS testing was performed either after 24 hours or 10,000 fatigue cycles (cyclic loading) and 5,000 thermocycles. Non-contact profilometry was used to measure surface roughness. Failure modes were evaluated under optical and scanning electron microscopy. The data were analyzed using 2-way analysis of variance and ${\chi}^2$ tests (${\alpha}=0.05$). Results: The 2.8 bar group showed significantly higher surface roughness compared to the 1 bar group (p < 0.05). The interaction between pressure and time/cycling was not significant on SBS, and pressure did not have a significant effect either. SBS was significantly higher (p = 0.006) for 24 hours storage compared to CLTC. The 2 bar-CLTC group presented significantly higher percentage of pre-test failure during fatigue compared to the other groups. Mixed-failure mode was more frequent than adhesive failure. Conclusions: CLTC significantly decreased the SBS values regardless of the air-abrasion pressure used.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.7 no.6
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• pp.1056-1063
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• 2006

Thermal evaporated 10 nm-Ni/l nm-Ir/(or polycrystalline)p-Si(100) and 10 nm-$Ni_{50}Co_{50}$/(or polycrystalline)p-Si(100) films were thermally annealed using rapid thermal annealing fur 40 sec at $300{\sim}1200^{\circ}C$. The annealed bilayer structure developed into Ni(Ir or Co)Si and resulting changes in sheet resistance, microstructure, phase and composition were investigated using a four-point probe, a scanning electron microscopy, a field ion beam, an X-ray diffractometer and an Auger electron spectroscope. The final thickness of Ir- and Co-inserted nickel silicides on single crystal silicon was approximately 20$\sim$40 nm and maintained its sheet resistance below 20 $\Omega$/sq. after the silicidation annealing at $1000^{\circ}C$. The ones on polysilicon had thickness of 20$\sim$55 nm and remained low resistance up to $850^{\circ}C$. A possible reason fur the improved thermal stability of the silicides formed on single crystal silicon substrate is the role of Ir and Co in preventing $NiSi_2$ transformation. Ir and Co also improved thermal stability of silicides formed on polysilicon substrate, but this enhancement was lessened due to the formation of high resistant phases and also a result of silicon mixing during high temperature diffusion. Ir-inserted nickel silicides showed surface roughness below 3 nm, which is appropriate for nano process. In conclusion, the proposed Ir- and Co- inserted nickel silicides may be superior over the conventional nickel monosilicides due to improved thermal stability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.803-808
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• 2014

$Bi_{0.5+x}(Na_{0.78}K_{0.22})_{0.5-3x}TiO_3$ ceramics with an excess $Bi^{3+}$ and a deficiency of $Na^+$ and $K^+$ were synthesized by a conventional solid state reaction method. The structure and morphology of $Bi_{0.5+x}(Na_{0.78}K_{0.22})_{0.5-3x}TiO_3$ ceramics were characterized by X-ray diffraction and field emission scanning electron microscopy. The electric polarization and mechanical strain induced by external electric field, and the temperature dependence of dielectric constant were investigated. These results demonstrated that an ergodic relaxor phase can be induced by controls of the mole ratio of $Bi^{3+}$, $Na^+$ and $K^+$. A phase boundary between non-ergodic and ergodic relaxor phases can be observed at ambient temperature. The ergodic relaxor phase can be transferred to the ferroelectric phase by application of the electric field. The stability of the induced ferroelectric phases strongly depends on the mole ratio of $Bi^{3+}$, $Na^+$ and $K^+$. The maximum strain of 0.31% was observed in $Bi_{0.51}(Na_{0.78}K_{0.22})_{0.47}TiO_3$ ceramics sintered at $1,150^{\circ}C$ for 2 h.

• Polymer(Korea)
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• v.28 no.5
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• pp.382-390
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• 2004

One of the significant natural bioactive materials is demineralized bone particle (DBP) whose has a powerful induce. of new bone growth. In this study, we developed the DBP loaded poly-lactide (PLA) and poly(L-lactide-co-glycolide) (PLGA) scaffolds for the possibility of the application of the tissue engineered bone. PLA/DBP and PLGA/DBP scaffolds were prepared by solvent casting/salt leaching method and were characterized by porosimeter, scanning electron microscopy. BMSCs were stimulated by osteogenic medium and characterized by histological stained Wright-Giemsa, Alizarin red, von Kossa, and alkaline phosphate activity (ALP). DBP impregnated scaffolds with BMSCs were implanted into the back of athymic nude mouse to observe the effect of DBP on the osteoinduction compared with control scaffolds. It can be observed that the porosity was above $90.2\%$ and the pore size was above 69.1$\mu$m. BMSCs could be differentiated into osteoprogenitor cells as result of wright-giemsa, alizarin red, von Kossa and ALP staining. In in vivo study, we could observed calcification region in PLA/DBP and PLGA/DBP groups, but calcification did not occur almost in control scaffolds. From these results, it seems that DBP as well as BMSCs play an important role for bone induction in PLA/DBP and PLGA/DBP scaffolds.

• Polymer(Korea)
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• v.33 no.1
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• pp.7-12
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• 2009

PLGA microspheres have been known as an injectable system for tissue engineering. The purpose of this study was to investigate the condition of emulsion formation and cell adhesion on the microsphere surface. BSA-loaded PLGA microsphere was fabricated by oil-in-water (O/W) and water-in-oil-in-water (W/O/W) solvent evaporation method. Sodium alginate was dissolved in water phase to control initial burst release and to improve lag time by PLGA bulk degradation. In addition, the morphology of cells attached on the micro spheres was studied using a scanning electron microscopy (SEM). Cellular proliferation behavior of human disc cells cultivated on PLGA micro spheres was analyzed using a MTT assay. MTT assay revealed that the cells can attach and proliferate on PLGA microspheres. According to these results, we concluded that BSA -loaded alginate/PLGA microspheres can be used as an injectable system for tissue engineering application.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.113-113
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• 2000

직접천이형 wide band gap(3.4eV) 반도체중의 하나인 GaN를 청색 및 자외선 laser diode, 고출력 전자장비 등으로 응용하기 위해서는 낮은 접합저항을 갖는 Ohmic contact이 선행되어야 한다. 그러나 만족할만한 p-type GaN의 Ohmic contact은 아직 실현되고 있지 못하며, 이는 GaN와 접합 금속과의 구체적인 반응의 연구를 필요로 한다. 본 연구에서 앞서 Pt, Pt, Ni등의 late transition metal을 p-GaN에 접합시킨 결과 이들은 접합 당시 비교적 평탄하나 후열 처리과정에서 비교적 낮은 온도에서 기판과 열팽창계수의 차이로 인하여 평탄성을 잃어버리면서 barrier height가 증가한다는 사실을 확인하였다. 따라서 본 연구에서는 이러한 열적 불안정성을 극복하기 위하여 Ni과 Pd를 차례로 증착하고 가열하면서 interfacial reaction, film morphology, Fermi level의 움직임을 monchromatic XPS(x-ray photoelectron spectroscopy) 와 SAM(scanning Auger microscopy) 그리고 ex-situ AFM을 이용하여 밝히고자 하였다. 특히 후열처리에 의한 계면 반응에 수반되는 구성 금속원소 간의 합금현상과 금속 층의 평탄성이 밀접한 관계가 있다는 것을 확인하였다. 이러한 합금과정에서 나타나는 금속원소들의 중심 준위의 이동을 체계적으로 규명하기 위해서 Pd1-xNix와 Pd1-xGax 합금들의 표준시료를 arc melting method로 만들어 농도에 따른 금속원소들의 중심 준위의 이동을 측정하여, Pd/Ni/p-GaN 및 Ni/Pd/p-GaN 계에서 열처리 온도에 따른 interfacial reaction을 확인하였다. 그 결과 두 계가 상온에서 nitride 및 alloy를 형성하지 않고 고르게 증착되고, 열처리 온도를 40$0^{\circ}C$에서 $650^{\circ}C$까지 증가시킴에 따라 계면반응의 부산물인 metallic Ga은 증가하고 있으마 nitride는 여전히 형성되지 않는 것을 확인하였다. 증착당시 Ni이 계면에 있는 Pd/Ni/p-GaN의 경우에는 52$0^{\circ}C$까지의 열처리에 의하여 Ni과 Pd가 골고루 섞이고 그 평탄성도 유지되고 barier height의 변화도 없었다. 더 높은 $650^{\circ}C$ 가열에 의해서는 surface free energy가 작은 Ga의 활발한 편석 현상으로 인해 표면은 Ga이 풍부한 Pd-Ga의 합금층으로 덮이고, 동시에 작은 pinhole들이 발생하며 barrier height도 0.3eV 가량 증가하게 된다. 반면에 증착당시 Pd이 계면에 있는 Ni/Pd/p-GaN의 경우에는 40$0^{\circ}C$의 가열까지는 두 금속이 그들 계면에서부터 섞이나, 52$0^{\circ}C$의 가열에 의해 이미 barrier height가 0.2eV 가량 증가하기 시작하였다. 더 높은 $650^{\circ}C$가열에 의해서는 커다란 pinhole, 0.5eV 가량의 barrier height 증가, Pd clustering이 동시에 관찰되었다. 따라서 Ni과 Pd의 일함수는 물론 thermal expansion coefficient가 거의 같으며 surface free energy도 거의 일치한다는 점을 감안하면, 이렇게 뚜렷한 열적 안정성의 차이는 GaN와 contact metal과의 반응시작 온도(disruption onset temperature)의 차이에 기인함을 알 수 있었다. 즉 계면에서의 반응에 의해 편석되는 Ga에 의해 박막의 strain이 이완되면, pinhole 등의 박막결함이 줄어 들고, 이는 계면의 N의 out-diffusion을 방지하여 p-type GaN의 barrier height 증가를 막게 된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.156-156
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• 2000

Recently, the surface electronic states have attracted much attention since their standing wave patterns created around steps, defects, and adsorbates on noble metal surfaces such as Au(111), Ag(110), and Cu(111) were observed by scanning tunneling microscopy (STM). As a typical example, a striking circular pattern of "Quantum corral" observed by Crommie, Lutz, and Eigler, covers a number of text books of quantum mechanics, demonstrating a wavy nature of electrons. After the discoveries, similar standing waves patterns have been observed on other metal and demiconductor surfaces and even on a side polane of nano-tubes. With an expectation that the surface states could be utilized as one of ideal cases for studying two dimensionakl (sD) electronic system, various properties, such as mean free path / life time of the electronic states, have been characterized based on an analysis of standing wave patterns, . for the 2D electron system, electron density is one of the most importnat parameters which determines the properties on it. One advantage of conventional 2D electron system, such as the ones realized at AlGaAs/GaAs and SiO2/Si interfaces, is their controllability of the electrondensity. It can be changed and controlled by a factor of orders through an application of voltage on the gate electrode. On the other hand, changing the leectron density of the surface-state 2D electron system is not simple. On ewqy to change the electron density of the surface-state 2D electron system is not simple. One way to change the electron density is to deposit other elements on the system. it has been known that Pd(111) surface has unoccupied surface states whose energy level is just above Fermi level. Recently, we found that by depositing Pd on Cu(111) surface, occupied surface states of Cu(111) is lifted up, crossing at Fermi level around 2ML, and approaches to the intrinsic Pd surface states with a increase in thickness. Electron density occupied in the states is thus gradually reduced by Pd deposition. Park et al. also observed a change in Fermi wave number of the surface states of Cu(111) by deposition of Xe layer on it, which suggests another possible way of changing electron density. In this talk, after a brief review of recent progress in a study of standing weaves by STM, I will discuss about how the electron density can be changed and controlled and feasibility of using the surface states for a study of 2D electron system. One of the most important advantage of the surface-state 2D electron system is that one can directly and easily access to the system with a high spatial resolution by STM/AFM.y STM/AFM.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.175-175
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• 2010

이전 연구에서는 사파이어 기판 위에 이종에피성장 방법으로 성장한 높은 인듐 조성의 극박 InGaN/GaN 다층 양자우물 구조를 이용한 근 자외선 (near-UV) 영역의 광원에 대하여 보고하였다. 본 연구에서는 HVPE (Hydride Vapor Phase Epitaxy) 법을 이용하여 성장된 free-standing GaN 기판 위에 유기금속 화학증착법 (MOCVD) 을 이용하여 GaN 동종에피박막과 높은 인듐 조성의 InGaN/GaN 다층 양자우물을 성장하였고 그 특성을 분석하였다. Free-standing GaN 기판은 표면 조도가 0.2 nm 인 평탄한 표면을 가지며 $10^7/cm^2$ 이하의 낮은 관통전위밀도를 가진다. Freestanding GaN 기판 위에 성장 온도와 V/III 비율을 조절하여 GaN 동종에피박막을 성장하였다. 또한 100 nm 두께의 동종 GaN 박막을 성장한 후에 활성층으로 이용될 높은 인듐 조성의 InGaN/GaN 다층 양자우물구조를 성장하였다. Free-standing GaN 기판 위에 성장된 GaN 동종에피박막과 다층 양자우물구조의 표면 형상은 주사 탐침 현미경 (scanning probe microscopy, SPM) 을 이용하여 관찰하였고 photoluminescence (PL) 측정과 cathodoluminescence (CL) 측정을 통하여 광학적 특성을 확인하였다. 사파이어 기판 위에 성장된 2 um 의 GaN을 이용하여 성장된 높은 인듐 조성의 InGaN/GaN 다층 양자우물의 결함밀도는 $2.5 \times 10^9/cm^2$ 이지만 동일한 다층 양자우물구조가 free-standing GaN 기판 위에 성장되었을 경우 결함 밀도는 $2.5\;{\times}\;10^8/cm^2$로 감소하였다. Free-standing GaN 기판의 관통전위 밀도가 $10^7/cm^2$ 이하로 낮기 때문에 free-standing GaN 기판에 성장된 높은 인듐 조성의 다층 양자우물구조의 결함밀도가 GaN/sapphire 에 성장된 다층 양자우물의 결함밀도 보다 감소했음을 알 수 있다. Free-standing GaN 기판에 성장된 다층 양자 우물은 성장온도에 따라 380 nm 에서 420 nm 영역의 발광을 보이며 PL 강도도 GaN/sapphire 에 성장한 다층 양자우물의 PL 강도 보다 높은 것을 확인할 수 있다. 이것은 free-standing GaN 기판에 성장된 높은 인듐 조성의 InGaN/GaN 다층 양자우물구조의 낮은 결함밀도로 인하여 활성층의 발광 효율이 개선된 것임을 보여준다.