• Journal of information and communication convergence engineering
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• v.8 no.1
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• pp.107-111
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• 2010

This paper has presented the dependence of the threshold voltage on back gate bias and drain voltage for FinFET. The FinFET has three gates such as the front gate, side and back gate. Threshold voltage is defined as the front gate bias when drain current is 1 micro ampere as the onset of the turn-on condition. In this paper threshold voltage is investigated into the analytical potential model derived from three dimensional Poisson's equation with the variation of the back gate bias and drain voltage. The threshold voltage of a transistor is one of the key parameters in the design of CMOS circuits. The threshold voltage, which described the degree of short channel effects, has been extensively investigated. As known from the down scaling rules, the threshold voltage has been presented in the case that drain voltage is the 1.0V above, which is set as the maximum supply voltage, and the drain induced barrier lowing(DIBL), drain bias dependent threshold voltage, is obtained using this model.

• Journal of computational fluids engineering
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• v.10 no.4 s.31
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• pp.32-38
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• 2005

Present study simulates oscillatory supersonic impinging jet flows using the axisymmetric Navier-Stokes code. To capture the salient features of flow oscillation and overcome the divergence during the initial transient period, several tests have been conducted for the grid and time step sizes. The results also show that the effects of the inlet flow condition at the nozzle exit and turbulence on the oscillatory behavior of supersonic impinging jets are negligible. Frequencies of the surface pressure oscillation obtained by the selected numerical method are in good accord with the measured impinging tones for various cases of nozzle-to-plate distance. Two seemingly different staging behaviors with nozzle-to-plate distance and nozzle pressure variations are found to correlate well if the frequency and distance are normalized by the length of the first shock cell.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.116-117
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• 2006

Increasing the solvent molecular size leads to shrinkage of the polymer chains and increase of the critical overlap concentrations. In addition, the dependency of $R_{g}$ on polymer concentration under normal solvent conditions and solvent molecular size is in good agreement with scaling laws. When the solvent molecular size approaches the ideal end-to-end distance of the polymer chain, an extra aggregation of polymer chains occurs, and the solvent becomes the so-called medium-sized solvent. When the size of solvent molecules is smaller than the medium size, the polymer chains are swollen or partially swollen. However, when the size of solvent molecules is larger than the medium size, the polymer coils shrink and segregate, enwrapped by the large solvent molecules.

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.107-116
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• 1994

In the manufacturing of VLSI circuits, variations of device characteristics due to the slight differences in process parameters drastically aggravate the performances of fabricated devices. Therefore, it is very important to establish optimal process conditions in order to minimize deviations of device characteristics. In this paper, we used one-dimensional process simulator, SUPREM-II, and two dimensional device simulator, MINIMOS 4.0 in order to extract optimal process parameter which can minimize changes of the device characteristics caused by process parameter variation in the case of short channel nMOSFET and pMOSFET device. From this simulation, we have derived the dependence relations between process parameters and device characteristics. Here, we have suggested a method to extract process parameters from design trend curve(DTC) obtained by these dependence relations. And we have discussed short channel effects and device limitations by scaling down MOSFET dimensions.

• Journal of computational fluids engineering
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• v.21 no.1
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• pp.94-102
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• 2016

The present paper deals with accuracy improvement of a bleed boundary condition model used to improve the performance of supersonic inlets. In order to accurately predict the amount of bleed mass flow rates, this study performs a scaling of sonic flow coefficient data for 90-degree bleed holes in consideration of Prandtl-Meyer expansion theory. Furthermore, it is assumed that porosity varies with stream-wise location of the porous bleed plate to accurately predict downstream boundary layer profiles. The bleed boundary condition model is demonstrated through Computational Fluid Dynamics(CFD) simulations of bleed flows on a flat plate with/without an oblique shock. As a result, the bleed model shows the improved accuracy of bleed mass rates and downstream boundary layer profiles.

• Proceedings of the Korean Operations and Management Science Society Conference
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• 1996.10a
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• pp.207-210
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• 1996

Learning methodologies such as neural networks or genetic algorithms usually require long training times. Case based reasoning, however, attains peak performance swiftly and is often appropriate for learning even with small data sets. Previous work has shown that an extended case reasoning methodology can yield superior performance in the task of predicting financial data series. This paper examines the impact of reasoning procedures on stock price prediction. The following characteristics are evaluated: size of input vector, multiplicity of neighboring states, and a scaling factor for growth. The concepts are illustrated in the context of predicting the price of an individual price.

• Computers and Concrete
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• v.22 no.1
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• pp.39-51
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• 2018

This study introduces a new algorithm to determine size independent values of fracture energy, fracture toughness, and fracture process zone length in three-point bending specimens with shallow to deep notches. By using the exact beam theory, a concept of equivalent notch length is introduced for specimens with no notches in order to predict the peak loads with acceptable precisions. Moreover, the method considers the variations of fracture process zone length and effects of higher order terms of stress field in each specimen size. In this paper, it was demonstrated that the use of some recently developed size effect laws raises some concerns due to the use of nonlinear regression analysis. By using a comprehensive fracture test data, provided by Hoover and Bazant, the algorithm has been assessed. It could be concluded that the proposed algorithm can facilitate a powerful tool for size effect study of three-point bending specimens with different notch lengths.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.18-26
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• 2004

Back-gated silicon-on-insulator MOSFET -a threshold-voltage adjustable device-employs a constant back-gate potential to terminate source-drain electric fields and to provide carrier confinement in the channel. This suppresses shortchannel effects of nano-scale and of high drain biases, while allowing a means to threshold voltage control. We report here a theoretical analysis of this geometry to identify its natural length scales, and correlate the theoretical results with experimental device measurements. We also analyze experimental electrical characteristics for misaligned back-gate geometries to evaluate the influence on transport behavior from the device electrostatics due to the structure and position of the back-gate. The backgate structure also operates as a floating-gate nonvolatile memory (NVRAM) when the back-gate is floating. We summarize experimental and theoretical results that show the nano-scale scaling advantages of this structure over the traditional front floating-gate NVRAM.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.2
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• pp.110-116
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• 2009

The prominent advantages of Dual Material Surrounding Gate (DMSG) MOSFETs are higher speed, higher current drive, lower power consumption, enhanced short channel immunity and increased packing density, thus promising new opportunities for scaling and advanced design. In this Paper, we present Transconductance-to-drain current ratio and electric field distribution model for dual material surrounding gate (DMSGTs) MOSFETs. Transconductance-to-drain current ratio is a better criterion to access the performance of a device than the transconductance. This proposed model offers the basic designing guidance for dual material surrounding gate MOSFETs.

• Steel and Composite Structures
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• v.26 no.1
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• pp.45-53
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• 2018

Experimental investigations have revealed significant mismatches between analytical estimates and experimentally measured deflections of transmission towers. These are attributed to bolt slip and joint flexibility. This study focuses on effects of joint flexibility on tower deflections and proposes criterions for permissible deflection limits based on the stresses in joints. The objective has been framed given that guidelines are not available in the codes of practices for transmission towers with regard to the permissible limits of deflection. The analysis procedure is geometric and material nonlinear with consideration of joint flexibility in the form of extension or contraction of the cover plates. The deflections due to bolt slip are included in the study by scaling up the deflections obtained from analysis by a factor. Using the results of the analysis, deflection limits for the towers are proposed by limiting the stresses in the joints. The obtained limits are then applied to a new full scale tower to demonstrate the application of the current study.