• Parasites, Hosts and Diseases
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• v.28 no.4
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• pp.197-206
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• 1990

Various conditions of cultures were performed to investigate the role of tight junctions formed between adjacent MDCK cells on the entry of Toxoplasma. When MDCK cells were cocultured with excess number of Toxoplasma at the seeding density of 1×105, 3×105, and 5×105 cells/ml for 4 days, the number of intracellular parasites decreased rapidly as the host cells reached saturation density, i.e., the formation of tight junctions. When the concentration of calcium in the media (1.8 mM in general) was shifted to $5{\mu}M$ that resulted in the elimination of tight junction, the penetration of Toxoplasma increased about 2-fold(p<0.05) in the saturated culture, while that of non-saturated culture decreased by half. Trypsin-EDTA which was treated to conquer the tight junctions of saturated culture favored the entry of Toxoplasma about 2.5-fold(P<0.05) compared to the non-treated, while that of non- saturated culture decreased to about one fifth. It was suggested that the tight junctions of epithelial cells play a role as a barrier for the entry of Toxoplasma and Toxoplasma penetrate into hoot cells through membrane structure-specific, i.e., certain kind of receptors present on the basolateral rather than apical surface of MDCK cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.343-344
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• 2012

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states. [1-3] We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.326-326
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• 2014

It has been known since the mid 1960s that Ag can be photodissolved in chalcogenide glasses to form materials with interesting technological properties. In the 40 years since, this effect has been used in diverse applications such as the fabrication of relief images in optical elements, micro photolithographic schemes, and for direct imaging by photoinduced Ag surface deposition. ReRAM, also known as conductive bridging RAM (CBRAM), is a resistive switching memory based on non-volatile formation and dissolution of a conductive filament in a solid electrolyte. Especially, Ag-doped chalcogenide glasses and thin films have become attractive materials for fundamental research of their structure, properties, and preparation. Ag-doped chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in ReRAM devices. In this paper, we investigated the nature of thin films formed by the photo-dissolution of Ag into Ge-Se glasses for use in ReRAM devices. These devices rely on ion transport in the film so produced to create electrically programmable resistance states [1-3]. We have demonstrated functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of Ag+ ions photo-induced diffusion in thin chalcogenide films is considered. The influence of Ag+ ions is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Saturated Ag+ ions have been used in the formation of conductive filaments at the solid electrolyte which is the active medium in ReRAM devices. Following fabrication, the cell displays a metal-insulator-metal structure. We measured the I-V characteristics of a cell, similar results were obtained with different via sizes, due to the filamentary nature of resistance switching in ReRAM cell. As the voltage is swept from 0 V to a positive top electrode voltage, the device switches from a high resistive to a low resistive, or set. The low conducting, or reset, state can be restored by means of a negative voltage sweep where the switch-off of the device usually occurs.

• Economic and Environmental Geology
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• v.9 no.3
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• pp.157-163
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• 1976

In this study, the oil bearing rock-sequence, U-hand-ri Formation (D.S. Lee et al., 1976), was subdivided into three members; the lower, the intermediate and the upper. The lower consists mainly of reddish purple tuff and sandy calcareous shales, the intermediate of an alternation of tuffs, sandstons, calcareous black shales, cherts and limestone and the upper of coarse grained variegated tuff and agglomerate. Oily matter was found from the black shales of the intermediate. Ten samples of black shales from drilled cores, 8 samples of black shales from different outcrops of the member, and 1 sample of grease-like seeping oil from black shales at U-hang-ri coast were chemically analyized. Among them, 9 samples contain remarkable amount of organic carbon (0.96~1.60%) and E.O.M. extract (0.176~0.718%), and mostly the bituminous material is saturated hydrocarbons as well as shown in infared spectroscopic analyses. The elemental analyses of MAE extracts and asphaltenes of some of thoese samples indicate that the transformation of organic material to crude oil is highly progressed. The authors suggest that the seeping oil and oily tinges in black shale layers are the products of natural cracking related with the igneous activities in the area nearby.

• The Korean Journal of Mycology
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• v.28 no.2
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• pp.109-111
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• 2000

Composition of fatty acids (FAs) in Pleurotus ostreatus were analyzed by gas chromatography and compositional changes according to cultivar, fruitbody section and developmental stage (days after primordia formation) were investigated. Major FAs in oyster mushroom were linoleic acid, oleic acid and palmitic acid. Unsaturated FAs were higher in pileus portion than upper- or lower-stipe portion. Oleic acid content was increased with developmental days but linoleic acid content was highest at $3{\sim}4$ days after primordia formation and then decreased after that. And ratio of unsaturated FAs/saturated FAs was decreased with basidiocarp maturation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1022-1026
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• 2007

We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30 nm and 50 nm respectively, device have excellent characteristics.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.29 no.7
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• pp.341-349
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• 2017

Formation and transportation of $CO_2$-hydrate slurry was conducted by circulating saturated water with $CO_2$ through a double-tube type heat exchanger which was cooled down by brine. The inner diameter and circulation length of the heat exchanger were 1 inch and 20 m, respectively. Water in tank was supersaturated by injected $CO_2$ and the operation pressure was maintained at 3,000 to 4,000 kPa with fluid-temperature of less than $9^{\circ}C$. $CO_2$ hydrate mass fraction was calculated based on density of $CO_2$-hydrate slurry mixture. Results showed that the $CO_2$-hydrate slurry could be circulated without blockage for 1 hr. Circulation status of the $CO_2$-hydrate slurry was also visualized.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.24-24
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• 2007

We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30nm and 50nm respectively, device have excellent characteristics.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.148-155
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• 1995

(1) The metastable crystalline(MX) phases formed by ion mixing are classified into 5 types, i.e. the super-saturated solid solutions and the enlarged HCP-I phases reported earlier, and the newly observed FCC-I phases in hcp-based alloys, The FCC-ll and HCP-ll phases in bcc-based alloys. The growth kinetics of the MX phases is discussed. (2) The interfacial free energy in the multilayered films was found to play an important role in ion beam mixing(IM) induced amorphization. By adding sufficient interfaces, amorphous alloys were obtained even in the systems with rather positive heat of formation. (3) Gibbs free energy diagrams of some representative systems were constructed, by calculating the free energy curves of all the competing phases. Steady-state thermal annealing was conducted and the results confirmed the relevance of the constructed diagrams, which were inturn employed to interpret the MX phase formation as well as the glass forming ability upon IM in the binary metal systems.

• Journal of the Korean institute of surface engineering
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• v.32 no.4
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• pp.531-537
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• 1999

A copper based leadframe was oxidized in brown-oxide forming solution, then the growth characteristics of brown oxide and the effect of brown-oxide formation on the adhesion strength of leadframe to epoxy molding compound (EMC) were studied by using sandwiched double cantilever beam (SDCB) specimens. The brown oxide is composed of fine acicular CuO, and its thickness increased up to ~150 nm within 2 minutes and saturated. Bare leadframe showed alomost no adhesion to EMC, while once the brown-oxide layer formed on the Surface of leadframe, the adhesion strength increased up to ~80 J/$\m^2$ within 2 minutes. Correlation between oxide thickness, $\delta$ and the adhesion strength in terms of interfacial fracture toughness, $G_{c}$ was linear. Considering the above results, we might conclude that the main adhesion mechanism of brown-oxide treated leadframe to EMC is mechanical interlocking, in which fine acicular CuO plays a major role.e.