• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.4
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• pp.139-142
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• 2024

Along with the use of wide bandgap energy materials such as SiC and GaN in power semiconductors and the development trend of devices, many research results have been reported, including the success of research on AlN single crystals with higher energy gaps and the development of 2-inch single crystal wafers. However, AlN single crystals grown using chemical vapor deposition have been developed into thin films less than a few micrometers thick, but there are almost no results with thicknesses greater than that. Therefore, in this study, we attempted to grow by applying HVPE (Hydride vapor phase epitaxy), one of the chemical vapor deposition methods. The grown AlN single crystal was manufactured using self-designed equipment, and we attempted to establish the conditions for manufacturing AlN single crystals on sapphire wafer. We would like to characterize the growth behavior through an optical microscope observation.

• Korean journal of applied entomology
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• v.24 no.1 s.62
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• pp.39-44
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• 1985

This study was undertaken to select a suitable Korean tissue paper for Baermann funnel method. Ten kinds of five manufacturers were evaluated as to nematode extraction efficiency in Baermann funnel. 'Crown Hankie'(Korea Special Paper Co., Ltd.) had suitable properties in nematode permeability and strength regardless of three soil types, loamy sand, sandy loam and clay loam. The number of nematodes extracted using 'Crown Hankie' 4 ply was 198, while that of 'Cottonwool Nematode Filter' was 227. Un-perfumed tissue papers showed higher nematode extraction efficiencies than perfumed tissue papers by 53 and 23% in 'Kleenex New Softness' and 'Monaliza Finely Soft Tissue', respectively. Among the nematode extraction efficiencies by temperatures, $15^{\circ},\;25^{\circ}\;and\;35^{\circ}C$, it was highest at $35^{\circ}C$. In experiment of evaluating nematode extraction using Baermann funnel at 12 hours interval to 92 hours, 35.3 and 40.3% of nematodes were extracted after 12 and 24 hours, respectively.

• Journal of the Optical Society of Korea
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• v.7 no.3
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• pp.166-173
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• 2003

This paper presents micromachining results on planar-lightwave-circuit (PLC) chips with Si substrate and the quartz substrate by using Ti:Sapphire femtosecond-pulsed laser. The ablation process with femtosecond laser pulses generates nothing of contamination, molten zone, microcracks, shock wave, delamination and recast layer. We also showed that the micromachine for PLC using femtosecond pulsed lasers is superior to that using nanosecond pulsed lasers. The insertion loss and the optical return loss of the 1 ${\times}$ 8 optical power splitters packaged with micromachined input- and output-port U-grooves were less than 11.0 ㏈ and more than 55 ㏈, respectively. The wavelength dependent loss (WDL) was distributed within $\pm$0.6 ㏈ and the polarization dependent loss (PDL) was less than 0.2 ㏈.

• Journal of the Optical Society of Korea
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• v.7 no.3
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• pp.156-159
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• 2003

Permanent structure of photoinduced singlemode waveguide in optical fluoride glasses was demonstrated using the self-channeled plasma filament excited by a femtosecond (110 fs) Ti:sapphire laser ($λ_p$ = 800 nm). The photoinduced refractive index modification in ZBLAN glasses reached a length of approximately 10 - 15 mm from the input surface of the optical glass with the diameters ranging from 5 to 8 ${\mu}{\textrm}{m}$ at input intensities more than l.0 ${\times}$ $10^{12}$ W/$\textrm{cm}^2$. The graded refractive index profiles were fabricated to be a symmetric form from the center of an optical fluoride glass and a maximum value of refractive index change (ㅿn) was measured to be l.3${\times}$$10^{-2}$. The beam profile of the output beam transmitted through the modified region showed that the photoinduced refractive index modification produced a permanent structure of singlemode waveguide.

• Journal of the Optical Society of Korea
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• v.7 no.3
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• pp.160-164
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• 2003

Materials processing by ultrashort pulsed laser is actively being applied to micromachining technology due to its advantages with regard to non-thermal machining. In this study, materials processing with ultrashort pulses was studied by using the high repetition rate of a 800 nm Ti:sapphire regenerative amplifier. This revealed that the highly precise micromachining of metallic thin film and bulk glass with a minimal heat affected zone (HAZ) could be obtained by using near damage threshold energy. Grooves with diffraction limited sub-micrometer width were obtained with widths of 620 nm on Cr thin film and 800 nm on a soda-lime glass substrate. The machined patterns were investigated through SEM images. We also phenomenologically examined the influence of variations of parameters and proposed the optimal process conditions for microfabrication.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1627-1630
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• 2004

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266nm. Before post-annealing treatment in the oxygen ambient, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $300{\sim}450^{\circ}C$ and flow rate of 100${\sim}$700 seem. In order to investigate the effect of post-annealing treatment of ZnO thin films, films have been annealed at various temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by X-ray diffraction(XRD) and the optical properties of the ZnO were characterized by photoluminescence(PL).

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.1
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• pp.206-213
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• 1996

The spectral-domain methos has been applied to an analysis of a open microstrip line on a dielectrically biaxial anisotropic substrate which takes into account both weak and tight anisotropy effect, which are very important in high-requency applications such as optical modulator, MMIC, etc.. Numerical results of propagation characteristics are validated against the data previously published for special dielectrically weak anisotropic cases(sapphire, Epsilam-10) and New data are calculated for dielectrically tight anisotropic case(LiNb $O_{3}$). Data are for these anisotropic substrates presented to illustrate the effect of three different orientations of the principle dielectric axes. It can be derived from the calculated data in this paper that component of dielectric tensor(.epsilon.$_{vv}$ ) in y-axis which is normal to microstrip-laid plane is important factor in propagation characteristics.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.6
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• pp.277-280
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• 2004

p-ZnO films have been grown on (0001) sapphire substrates by RF-DC magnetron co-sputtering. The p-ZnO single crystalline thin films of the thickness about 120 nm were grown successfully. The dopant (Aluminum) was sputtered simultaneously from Al metal target by DC sputtering during rf-magnetron sputtering of ZnO at the substrate temperatures of $400^{\circ}C$ and $600^{\circ}C$ respectively. The crystallinity and optical properties of as-grown P-ZnO films have been characterized.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.247-251
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• 1997

GaN films were grown on three differently oriented sapphire substates; (0001), (11-20), and (1-20). GaN films on the (0001) and (11-20) substates have a haxagonal structure and their growth rate was 0.6 $\mu\textrm{m}$/hr in both case. The film on the (1-102) substrate was too thin to identify its crystalline state. Growth rate was about the half of the others. Substrate orientation is one of the factor determining growth rate. The adhesion between GaN film and alumina substrate seems to be very good judging from the fractography.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.149-154
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• 1997

광소자 및 새로운 개념의 전력소자 응용을 위하여 Wide Bandgap 반도체에 대한 관심이 급증되고 있다. 특히 직접천이형인 GaN는 청색 발광소자 응용 및 고출력, 고주파용 전력소자 응용에 이상적인 전자물성을 갖고 있다. 따라서 본 연구에서는 GaCl$_3$와 NH$_3$를 source gas로 하는 CVPE법을 사용하여 (0001) sapphire와 비교하였다. 기판의 증착온도 104$0^{\circ}C$에서 source gas의 III/V flow rate를 2로 분석하여 45분간 성장시킨 경우 그 증착속도는 약 40 $\mu\textrm{m}$/hr 정도였으며, 이 때 XRD을 향상시키기 위하여 증착이전에 기판의 표면에 증착온도에서 NH$_3$를 이용한 nitridation 처리를 하였으며, 그 처리시간이 3분일 때 XRD의 FWHM 특성이 가하여 조사한 결과 363 nm에서 peak가 검출되었다. 본 연구에서는 양질의 GaN 박막성장을 위한 증착조건 인자중 source gas의 flow rate가 가장 중요한 변수임을 적정 온도 범위가 75$0^{\circ}C$ 근처로 조사되었다. 실험과 모사결과의 박막 증착 최적온도의 차이는 GaN 증착시의 반응 Kinetics가 느리기 때문인 것으로 해석된다.