• Title/Summary/Keyword: s-Al.p

Search Result 1,314, Processing Time 0.025 seconds

Fabrication of $Al_2O_{3p}/Al$ composites by in-situ Reaction Process of Molten Al (In-situ 반응에 의한 $Al_2O_{3p}/Al$기 복합재료의 제조)

  • 김재동;정해용;고성위
    • Composites Research
    • /
    • v.12 no.3
    • /
    • pp.36-44
    • /
    • 1999
  • The fabrication process of $Al_2O_{3p}/Al$ composite by in-situ process was investigated. The effects of processing variables such as addition type and content of Mg, processing temperature and time on the infiltration behavior of molten Al, microstructure and hardness were investigated. When the pure Al was infiltrated into mixtures of Mg and $Al_2O_3l$ powder, processing temperature required to spontaneous infiltration was decreased, and the content of Mg was the most powerful variable for infiltration of molten Al. But when the Al-Mg alloy was infiltrated into $Al_2O_3l$ particles, infiltration ratio indicated nearly same value regardless of Mg content in alloy and processing temperature, and critical processing temperature required to spontaneous infiltration was $800^{\circ}C$. The $Al_2O_{3p}/Al$ composites which were fabricated by mixtures of Mg and $Al_2O_3l$ powders resulted in high hardness value, but hardness values were scattered due to non uniform dispersion of $Al_2O_3l$ particles by excessive reaction of Mg.

  • PDF

Analysis of antigenic domain of GST fused major surface protein (p30) fragments of Toxoplasma gondii (융합단백질로 발현된 톡소포자충의 주요막단백질(p30) 절편의 항원성)

  • 남호우;임경심
    • Parasites, Hosts and Diseases
    • /
    • v.34 no.2
    • /
    • pp.135-142
    • /
    • 1996
  • Antigenic domain of jai or surface protein (p30) of Toxoplosmc Sondii was analyzed after polymerase chain reaction (PCR) of its gene fragments. Hydrophilic or hydrophobic moiety of amino acid sequences were expressed as glutathione S-transferase (G57) fusion proteins. Fragments of p30 gene were as follows: 737, total p30 open reading frame (ORF) ; S28, total ORF excluding N-terminal signal sequence and C-terminal hydrophobic sequence; Al9, N-terminal 2/3 parts of A28; A19, N-terminal 2/3 of S28; P9, C-terminal 2/3 part of S28; Z9. middle 1/3 of S28; and 29, C-terminal 1/3 of S28. respectively. Primer of each fragment was synthesized to include clamp sequence of EcoR I restriction site. PCR amplified DNA was inserted info GST (26 kDa) expression vector, PGEX-47-1 to transform into Escheri,hia coei (.JM105 strain). G57 fusion proteins were expressed with IPTG induction as 63. 54, 45, 45, 35, 36. and 35 kDa proteins measured by SDS-PAGE. Each fusion protein was confirmed with G57 detection kit. Western blot analysis with the serum of a toxoplasmosis patient revealed antigenicity in proteins expressed by T37. S28, and Al9 but not those by Pl8. X9, Y10, and Z9. Antigenicity of p30 seems to be located either in N-terminal 115 part in the presence of middle 1/3 part or in the oligopeptides between margins of the first and second 1/3 parts.

  • PDF

Half-metallic Ferromagnetism for Mn-doped Chalcopyrite (Al,Ga)As Semiconductor (Chalcopyrite (Al,Ga)As 반도체와 Mn의 반금속 강자성)

  • Kang, B.S.;Song, K.M.
    • Journal of the Semiconductor & Display Technology
    • /
    • v.19 no.3
    • /
    • pp.49-54
    • /
    • 2020
  • We studied the electronic and magnetic properties for the Mn-doped chalcopyrite (CH) AlAs, GaAs, and AlGaAs2 semiconductor by using the first-principles calculations. The chalcopyrite AlGaP2, AlGaAsP, and AlGaAs2 compounds have a semiconductor characters with a small band-gap. The interaction between Mn-3d and As-4p states at the Fermi level dominate rather than the other states. The ferromagnetic ordering of dopant Mn with high magnetic moment is induced due to the Mn(3d)-As(4p) strong coupling, which is attributed by the partially filled As-4p bands. The holes are mediated with keeping their 3d-electrons, therefore the ferromagnetic state is stabilized by this double-exchange mechanism. We noted that the ferromagnetic state with high magnetic moment is originated from the hybridized As(4p)-Mn(3d)-As(4p) interaction mediated by the holes-carrier.

Aluminum Toxicity on Corn Seedlings (옥수수 유묘(幼苗)에 대(對)한 알미늄 독성(毒性))

  • Lee, Yong-Seok
    • Korean Journal of Soil Science and Fertilizer
    • /
    • v.10 no.2
    • /
    • pp.75-78
    • /
    • 1977
  • Corn (Zea may, L.) was grown alternatively in nutrient solution and hydroxy Al or Al-citrate solution to identify the form of Al which induces Al toxicity on Corn seedlings. Corn seedlings exposed to hydroxy Al solution was very toxic but Al-citrate solution did not show any toxic symptoms. At pH 7 with Al-citrate solution, severe Fe, deficiency was induced probably by the decrease of stability constant of Al-and Fe-oganic complexes and subsequent precipitation of Al-and Fe-as a hydroxide form. Addition of humic acid ameliorated the Al toxicity somewhat at pH 4.7 with hydroxy-Al solution but at pH 7 it induced more severe Fe deficiency.

  • PDF

Electrical Characteristics of Ti Self-Aligned Silicide Contact (Ti Self-Aligned Silicide를 이용한 Contact에서의 전기적 특성)

  • 이철진;허윤종;성영권
    • The Transactions of the Korean Institute of Electrical Engineers
    • /
    • v.41 no.2
    • /
    • pp.170-177
    • /
    • 1992
  • Contact resistance and contact leakage current of the Al/TiSiS12T/Si system are investigated for NS0+T and PS0+T junctions. SALICIDE (Self Aligned Silicide) process was used to make the Al/TiSiS12T/Si system. Titanium disilicide is one of the most common silicides because of its thermal stability, ability to form selective formation and low resistivity. In this paper, RTA temperature effect and Junction implant dose effect were evaluated to characterize contact resistance and contact leakage current. The TiSiS12T contact resistance to NS0+T silicon is lower than that to PS0+T silicon, and TiSiS12T of contact leakage current to NS0+T silicon is lower than that to PS0+T silicon. Contact resistance and contact leakage current of the Al/TiSiS12T/Si system by this method were possible for VLSI application.

The Synthesis of p-acetylcalix[4]arene via Fries Rearrangement Route

  • No, Kwang-Hyun;Noh, Yeoung-Joo;Kim, Youn-Hee
    • Bulletin of the Korean Chemical Society
    • /
    • v.7 no.6
    • /
    • pp.442-444
    • /
    • 1986
  • Starting with the readily available p-tert-butyl-calix[4]arene 2, tert-butyl groups are removed by $AlCl_3$-catalyzed de-alkylation reaction, and the calix[4]arene 3 formed is converted to the tetraacetate 4. This compound undergoes Fries rearrangement to yield p-acetylcalix[4]arene 6, which seems to be an attractive starting material for the introduction of functional groups. As a preliminary experiment p-(1-hydroxyethyl)calix[4]arene 7 is prepared by LiAlH$_4$ reduction of 6.

Properties of Organic-Inorganic Protective Films on Flexible Plastic Substrates by Spray Coating Method (연성 플라스틱 기판위에 스프레이 코팅방법으로 제조한 유·무기 보호막의 특성)

  • Lee, Sang Hee;Chang, Ho Jung
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.24 no.4
    • /
    • pp.79-84
    • /
    • 2017
  • The solar cells should be protected from the moisture and oxygen in order to sustain the properties and reliability of the devices. In this research, we prepared the protection films on the flexible plastic substrates by spray coating method using organic-inorganic hybrid solutions. The protection characteristics were studied depending on the various process conditions (nozzle distance, thicknesses of the coatings, film structures). The organic-inorganic solutions for the protection film layer were synthesized by addition of $Al_2O_3$ ($P.S+Al_2O_3$) and $SiO_2$ ($P.S+SiO_2$) nano-powders into PVA (polyvinyl alcohol) and SA (sodium alginate) (P.S) organic solution. The optical transmittances of the protection film with the thicknesses of $5{\mu}m$ showed 91%. The optical transmittance decreased from 81.6% to 73.6% with the film thickness increased from $78{\mu}m$ to $178{\mu}m$. In addition, the protective films were prepared on the PEN (polyethylene naphthalate), PC (polycarbonate) single plastic substrates as well as the Acrylate film coated on PC substrate (Acrylate film/PC double layer), and $Al_2O_3$ film coated on PEN substrate ($Al_2O_3$ film/PEN double layer) using the $P.S+Al_2O_3$ organic-inorganic hybrid solutions. The optimum protection film structure was studied by means of the measurements of water vapor transmittance rate (WVTR) and surface morphology. The protective film on PEN/$Al_2O_3$ double layer substrate showed the best water protective property, indicating the WVTR value of $0.004gm/m^2-day$.

Explosion Hazards and Flame Velocity in Aluminum Powders (알루미늄 분체의 폭발위험성과 화염전파속도)

  • Han, Ou-Sup;Lee, Su-Hee
    • Journal of the Korean Institute of Gas
    • /
    • v.16 no.5
    • /
    • pp.7-13
    • /
    • 2012
  • An experimental study has been done to investigate the explosion characteristics of aluminum powders with different sizes and concentrations in a 20 L spherical explosion vessel. Two different sizes of aluminum powder were used : $15.1{\mu}m$ and $34.8{\mu}m$ with a volume mean diameter. The results revealed that $15.1{\mu}m$ Al powder has a Lower explosion limit (LEL) of $40g/m^3$, a maximun explosion pressure ($P_{max}$) of 9.8 bar and a maximum rate of pressure rise ($[dP/dt]_{max}$) of 1852 bar/s, in $34.8{\mu}m$ Al powder, LEL of $70g/m^3$, $P_{max}$ of 7.9 bar and $[dP/dt]_{max}$ of 322 bar/s. The LEL of Al powders tended to increase with the increase of particle size. Also, it was found that the flame velocity calculated from the powder with $15.1{\mu}m$ was about 5 times higher than that of the powder of $34.8{\mu}m$.

Effects of P Addition and Fading Time on the Primary Si Microstructure Changes of Hypereutectic Al-Si Alloy (과공정 Al-Si합금의 초정 Si 미세조직변화에 미치는 P 첨가와 fading 시간의 영향)

  • Park, Joo-Yul;Kim, Eok-Soo;Lee, Kwang-Hak
    • Journal of Korea Foundry Society
    • /
    • v.24 no.2
    • /
    • pp.85-93
    • /
    • 2004
  • Mechanical property of hypereutectic Al-Si alloy is changed according to size and distribution of primary Si. Consequently, the study on the refinement for primary Si is progressed for a long time. But such effect of refinement comes out fading phenomena with the lapse of time. Therefore, this study investigated the optimum condition of primary Si refinement for hypereutectic Al-Si alloy. And we observed various primary Si size with P's fading phenomena. The experiment results were as follows. For experiment of primary Si refinement, we made hypereutectic Al-Si alloy with various amounts of P addition. As a result of experiment, we obtained the fine microstructure at 0.01wt.%P. And the optimum condition of P addition, for preventing from growth of primary Si by P fading, is estimated 0.1wt.%P.