• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.313-320
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• 2013

The $AlAs_xSb_{1-x}$ step-graded buffer (SGB) layer was grown on the Silicon (Si) substrate to overcome lattice mismatch between Si substrate and $Al_{0.3}Ga_{0.7}As$/GaAs multiple quantum wells (MQWs). The value of root-mean-square (RMS) surface roughness for 5 nm-thick GaAs grown on $AlAs_xSb_{1-x}$ step-graded buffer layer was ~1.7 nm. $Al_{0.3}Ga_{0.7}As$/GaAs MQWs with AlAs/GaAs short period superlattice (SPS) were formed on the $AlAs_xSb_{1-x}$/Si substrate. Photoluminescence (PL) peak at 10 K for the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure showed relatively low intensity at ~813 nm. The RMS surface roughness of the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure was ~42.9 nm. The crystal defects were observed on the cross-sectional transmission electron microscope (TEM) images of the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure. The decrease of PL intensity and increase of RMS surface roughness would be due to the formation of the crystal defects.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.4 s.33
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• pp.81-86
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• 2004

A new method to improve the wet etching characteristics is described. The anisotropic wet-etching of (100) Si with megasonic wave has been studied in KOH solution. Etching characteristics of p-type (100) 6 inch Si have been explored with and without megasonic irradiation. It has been observed that megasonic irradiation improves the characteristics of wet etching such as an etch uniformity and surface roughness. The etching uniformity on the whole wafer with and without megasonic irradiation were less than ${\pm}1\%$ and more than $20\%$, respectively. The initial root-mean-square roughness($R_{rms}$) of single crystal silicon is 0.23 nm. It has been reported that the roughnesses with magnetic stirring and ultrasonic agitation were 566 nm and 66 nm, respectively. Comparing with the results, etching with megasonic irradiation achieved the Rrms of 1.7 nm on the surface after the $37{\mu}m$ of etching depth. Wet etching of silicon with megasonic irradiation can maintain nearly the original surface roughness after etching process. The results have verified that the megasonic irradiation is an effective way to improve the etching characteristics such as etch uniformity and surface roughness.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.3 no.2
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• pp.53-58
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• 1998

Ekman layer equation with rough-bottom boundary condition has been solved to determine the effect of roughness on the magnitude of Ekman veering. The bottom boundary condition and the flow field were expanded in a power of roughness (h) which is always smaller than the Ekman layer thickness (${\delta}_E$). By changing the magnitude of roughness parameter (h/${\delta}_E$), the magnitude of the veering, which rotates counterclockwise from the interior geostrophic flow, has been computed. At a fixed depth within the Ekman layer, the magnitude of veering increases as the roughness parameter increases. However, the cross-isobar flux turns out to decrease with increasing roughness. To verify the analytic solution, laboratory experiments were carried out. Rough-bottom cylinderical container filled with homogeneous fluid was sit on a rotating table. The flow pattern during the period of steady spin-up shows that the degree of veering coincides well with the analytic results for various roughness parameters.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.468-472
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• 2005

This paper is to investigate the influence of the endface quality on the loss characteristics of a plastic optical fiber connector for in-car network service. Using the parameters of the surface roughness and applied load, insertion loss of connector is measured. Due to scattering and change of refractive index, an optimal condition for low-loss coupling exists. We present the optimal condition as surface roughness $R_{rms}$ = 8 nm and contact load up to 50 N.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.3 s.180
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• pp.61-68
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• 2006

This paper is to investigate the influence of the endface quality on the loss characteristics of a plastic optical fiber(POF) connector and the stability of new designed sleeve for in-car network service. Using the parameters of the surface roughness and applied load, insertion loss of connector is measured. Endface condition for optimizing the connection is presented by the surface roughness satisfying loss criteria and the stress for minimizing the loss, $R_{rms}=8nm$ and 19 MPa, respectively. By vibration test and dynamic loss measurement, we show the stability of the new designed sleeve.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.19 no.10
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• pp.1083-1091
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• 2009

Modern military equipments are tend to be mounted on a movable truck for their survivability and operation performance. Special units and electronic equipments installed on the truck experience the vibration caused by road roughness during their transport. The level of the transportation vibration is affected by both road conditions and vehicle speeds. In this paper, various experiments on the vibration characteristics of the equipment are carried out via road tests. Transportation vibration is also investigated by numerical analysis using FEM, and natural frequencies and random responses of the launcher are obtained. The PSD and RMS values of acceleration of the equipment are predicted and compared with test results.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1393-1395
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• 2001

DLC films are deposited by using a modified FCVA system. Carbon amorphous network, surface roughness, internal compressive stress, resistivity, and Hall mobility are studied as a function of nitrogen flow rate (0 $\sim$ 10 sccm). As the nitrogen content is increased in the carbon network, the size of $sp^2$ clusters is increased, the internal compressive stress is decreased, and the resistivity is remarkably decreased. The RMS values of the surface roughness are measured to be in the range of 0.2$\sim$0.5nm. The Hall mobility of DLC film with 3 sccm of nitrogen added is 3.22 $cm^2/V{\cdot}$s.

• Applied Science and Convergence Technology
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• v.25 no.2
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• pp.32-35
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• 2016

Using conventional deposition techniques, we demonstrate a method to fabricate ultra-smooth 10 nm silver films without using a wetting layer or co-depositing another material. The argon working pressure plays a crucial role in achieving an excellent surface flatness for silver films deposited by DC magnetron sputtering on an InP substrate. The formation of ultra-smooth silver thin films is very sensitive to the argon pressure. At the optimum deposition condition, a uniform silver film with an rms surface roughness of 0.81 nm has been achieved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.805-811
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• 2000

Reliability of PBGA(plastic ball grid array) package is weak compared with normal plastic packages. The low reliability is caused by low resistance to the popcorn cracking, which is generated by moisture absorption in PCB(prited circuit board). In this paper, plasma treatment process was used and we analyzed its effects to interface adhesion. The contents of C and Cl decrease after plasma treatment but those of O, Ca, N relatively increase. The plasma treatment improves the adhesion between EMC(epoxy molding compound) and PCB(solder mask). The grade of improvement was over 100% Max, which depends on the properties of EMC. The RMS(root mean square) roughness value of the solder mask surface increases to plasma treatment. There is little difference of adhesion in RF power and treatment time.

• Applied Science and Convergence Technology
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• v.23 no.2
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• pp.90-96
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• 2014

Flexible $ZrO_2$ films as dielectric materials for high-energy-density capacitors were deposited on polyethylene terephthalate (PET) substrates by RF magnetron sputtering. The growth behavior, microstructure and electrical properties of the flexible $ZrO_2$ films were dependent on the sputtering pressure and gas ratio. Although $ZrO_2$ films were deposited at room temperature, all films showed a tetragonal crystalline structure regardless of the sputtering variables. The surface of the film became a surface with large white particles upon an increase in the $O_2/Ar$ gas ratio. The RMS roughness and crystallite size of the $ZrO_2$ films increased with an increase in the sputtering pressure. The electrical properties of the $ZrO_2$ films were affected by the microstructure and roughness. The $ZrO_2$ films exhibited a dielectric constant of 21~38 at 1 kHz and a leakage current density of $10^{-6}{\sim}10^{-5}A/cm^2$ at 300 kV/cm.