• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.185-185
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• 2000

플라즈마 연구 및 응용에서 플라즈마를 구성하는 이온에 대한 정보를 얻는 것은 중요하다. 특히 플라즈마 진단, 박막 증착, 플라즈마 코팅, 플라즈마 이온주입 등과 같은 플라즈마 프로세싱에서 이온들의 종류 구성비율 및 분포는 매우 중요하다. 질량분석기는 대개 큰 규모로 복잡하고 값비싼 경향이 있다. 플라즈마 교란을 최소화하면서 충분한 질량분해능을 갖고 국소적으로 이온들을 분석할 수 있는 간단하고 작은 규모의 값싼 질량분석기가 필요하다. 본 연구에서는 플라즈마 내에 존재하는 이온을 분석하기 위하여 간단하고 작은 규모의 값싼 프라즈마 이온 질량분석기를 설계, 제작하였다. 이온 질량분석기는 ion extraction part, double focusing sector magnet, ion collector로 구성되어 있다. 플라즈마에 잠기는 ion extraction part의 외부 전극에 Al2O3를 코팅하여 플라즈마 교란을 최소화하였다. 이온들의 공간적 분포를 측정하기 쉽게 하기 위하여 ion extraction part를 이동하여도 질량여과기를 통과한 후에 접속되는 초점의 위치가 Faraday ion collector 에 고정되도록 ion optical system을 설계하였다. Extracting electrode에 의하여 가속된 이온들이 sector magnet에 들어갈 때 평행이 되게 하기 위하여 여러 개의 미세구조를 갖는 Mo grids를 사용하고 immersion lens를 넣어서 이온 광학 시스템을 구성하였다. extraction electrode와 sector magnet 사이에 보조 electrode를 하나 더 넣어서 extracting electrode와 보조 electrode 사이에 immersion lens를 만들었다. 질량여과기로는 permanent magnet sector와 time-varying electrical field를 결합하여 사용하였다. Extracting electrode에 1kV 정도의 전압을 인가하여 이온들을 가속시키고 sector magnet에 톱니파 형태의 전압을 인가하여 mass spectrum을 얻었다. 이온 질량분석기를 플라즈마 장치에 적용하여 질량분해능 등의 특성을 연구하였다. Hot cathode discharge와 inductively coupled RF discharge에서 발생된 질소 플라즈마를 구성하는 이온들의 종류와 그 구성비율을 연구하였다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.508-508
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• 1996

;The growth of films have considerable interest in the field of superlattice structured multi-layer epitaxy led to realization of new devices concepts. Molecular beam epitaxy (MBE) with in situ observation by reflection high-energy electron diffraction (RHEED) is a key technology for controlled layered growth on the atomic scale in oxide crystal thin films. Also, the combination of radical oxygen source and MBE will certainly accelerate the progress of applications of oxides. In this study, the growth process of single crystal films using by MBE method is discussed taking the oxide materials of Bi-Sr-Ca-Cu family. Oxidation was provided by a flux density of activated oxygen (oxygen radicals) from an rf-excited discharge. Generation of oxygen radicals is obtained in a specially designed radical sources with different types (coil and electrode types). Molecular oxygen was introduced into a quartz tube through a variable leak valve with mass flowmeter. Corresponding to the oxygen flow rate, the pressure of the system ranged from $1{\;}{\times}{\;}10^{-6}{\;}Torr{\;}to{\;}5{\;}{\times}{\;}10^{-5}$ Torr. The base pressure was $1{\;}{\times}{\;}10^{-10}$ Torr. The growth of Bi-oxides was achieved by coevaporation of metal elements and oxygen. In this way a Bi-oxide multilayer structure was prepared on a basal-plane MgO or $SrTiO_3$ substrate. The grown films compiled using RHEED patterns during and after the growth. Futher, the exact observation of oxygen radicals with MBE is an important technology for a approach of growth conditions on stoichiometry and perfection on the atomic scale in oxide. The oxidization degree, which is determined and controlled by the number of activated oxygen when using radical sources of two types, are utilized by voltage locked loop (VLL) method. Coil type is suitable for oxygen radical source than electrode type. The relationship between the flux of oxygen radical and the rf power or oxygen partial pressure estimated. The flux of radicals increases as the rf power increases, and indicates to the frequency change having the the value of about $2{\times}10^{14}{\;}atoms{\;}{\cdots}{\;}cm^{-2}{\;}{\cdots}{\;}S^{-I}$ when the oxygen flow rate of 2.0 seem and rf power 150 W.150 W.

• 대한전자공학회논문지SD
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• 제40권3호
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• pp.1-9
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• 2003

본 연구에서는 1-단자 표면탄성파 공진기를 적용한 사다리형 구조 필터에 대한 전극 두께, 공진기의 반사기 하중 및 정적 정전용량비에 따른 주파수 응답특성의 고찰이 이루어졌으며, 최적화된 매개변수를 이용하여 송신 및 수신단용 RF 필터를 제작하였다. 제작된 필터는 800㎒ 대역 이동통신 시스템에 적용 가능하며, 외부회로에 의한 임피던스 정합이 필요하지 않다. 36°LiTaO₃ 압전기판 위에 Al-Cu(W 3%) 전극을 형성하여 제작하였으며, 3.8㎜×3.8㎜×1.5㎜세라믹 패키지에 실장되었다. 통과대역(25 ㎒)에서의 최소 삽입손실은 2.3 dB, 3-dB 대역폭은 약 33 ㎒, 통과대역 리플은 0.5 dB 미만이며, 약 30 dB 이상의 저지대역 감쇄를 확보할 수 있었다. 또한, 제작된 RF 필터의 내전력성 및 온도 변화에 따른 주파수 응답특성 실험을 통해 약 3.5 W의 내전력성과 -20℃∼80℃에서 최대 0.09 dB/℃의 3-dB 삽입손실 변화를 측정할 수 있었다.

• 한국세라믹학회지
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• 제36권4호
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• pp.403-409
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• 1999

RF 마그네트론 스퍼터링방법으로 Pt/Ti/NON/Si 기판 위에 $Ba_{0.66}$$Sr_{0.38}$$TiO_{3}$(BST) 박막을 증착한 다음 유전 및 초전특성을 살펴보았다. BST 박막을 증착할 때 기판온도를 300~-$600^{\circ}C$로 변화시킨 결과 기판온도가 증가할수록 박막의 결정성과 입도가 증가하여 유전율과 초전계수가 증가하였다. 한편 하부전극인 Pt의 증착조건이 BST 박막의 몰성에 미치는 영향도 살펴보았다. Pt의 증착온도와 Pt의 미세구조와 결정성뿐만 아니라 상부에 형성된 BST 박막의 배향성에도 큰 영향을 미쳤으며, 그 결과 BST의 초전특성에도 큰 영향을 미쳤다. BST 박막과 Pt 하부전극의 증착조건을 적정화함으로써 본 연구에엇는 상온에서 초전계수가 240 $nCcm^{-2}K^{-1}$인 BST 박막을 얻었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.364-368
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• 1997

We have investigated Pt and RuO$_2$as a bottom electrode for a device application of PZT thin film. The bottom electrodes were prepared by using an RF magnetron sputtering method. We studied some of the property influencing factors such as substrate temperature, gas flow rate, and RF power. An oxygen partial pressure from 0 to 50% was investigated. The results show that only Ru metal was grown without supp1ying any O$_2$gas. Both Ru and RuO$_2$phases were formed for O$_2$partial pressure between 10∼40%. A Pure RuO$_2$ phase was obtained with O$_2$partial pressure of 50%. A substrate temperature from room temperature to 400$^{\circ}C$ was investigated with XRD for the film crystallinity examination. The substrate temperature influenced the surface morphology and the resistivity of Pt and RuO$_2$as well as the film crystal structure. From the various considerations, we recommend the substrate temperature of 300$^{\circ}C$ for the bottom electrode growth. Because PZT film growth on top of bottom electrode requires a temperature process higher than 500$^{\circ}C$, bottom electrode properties were investigated as a function of post anneal temperature. As post anneal temperature was increased, the resistivity of Pt and RuO$_2$was decreased. However, almost no change was observed in resistivity for an anneal temperature higher than 700$^{\circ}C$. From the studies on resistivity and surface morphology, we recommend a post anneal temperature less than 600$^{\circ}C$.

• Radiation Oncology Journal
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• 제9권1호
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• pp.27-35
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• 1991

8MHz 라디오파를 이용한 자입식 온열치료를 위한 기초실험의 일환으로 조직등가물을 이용하여 다양한 needle electrode의 배열을 통한 적정 온도분포를 규명하고자 하였고, 직접 개의 뇌실질에 자입 온열요법을 시도하여 이에 따른 조직 병리학적 소견을 관찰하고자 하였다. 조직등가물 실침에서 저자들은 needle electrode 1 cm 간격의 정방형 배치에서 횡단면상 $90\%$ relative SAR 분포가 약 1.25 cm 반경의 균일한 원형으로 관찰됨을 알 수 있었고 종단면상 needle electrode의 길이에 따라 균일한 온도분포가 이루어짐을 관찰할 수 있었다. 정상 개의 뇌실질에 자입하여 직접 정방형의 중심을 $43^{\circ}C$로 유지하며 50분간 온열요법을 시행한 후 관찰한 조직 병리학적 소견은 liquefactive necrosis, pyknosis of neuronal element 및 Polymorphonuclear leukocytes들이 회백질에서 급성기에 관찰 되었고 liquefactive necrosis 주위에 lipid-laden macrophage들이 관찰됨이 공통적인 특징 이었으며 후기 변화로 괴사조직 주위로 신경교세포의 증식이 관찰되었다.

• 반도체디스플레이기술학회지
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• 제9권4호
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• pp.83-86
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• 2010

The transparent electrode properties of ITO films deposited by RF magnetron sputtering with process pressure were investigated. The ITO thin films was deposited on a glass substrate using a target with 3in diameter sintered at a ratio of $In_2O_3$ : $SnO_2$ (9 : 1). 200-nm-thick ITO thin films were manufactured by various process pressures ($2.0{\times}10^{-2}$, $7.0{\times}10^{-3}$ and $2.0{\times}10^{-3}$ Torr). The optical transmittance and resistivity of the deposited ITO thin films showed a relatively satisfactory result under $10^{-2}$ Torr. For high process pressure, the optical transmittance was below 80%, while for low process pressure, the optical transmittance was above 85%. As a result of of mobility, resistivity and carrier concentration by Hall measurement, we obtained satisfactory properties to apply into a transparent conducting thin film.

• 한국전기전자재료학회논문지
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• 제22권10호
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• pp.837-843
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• 2009

$TiO_2$(2 wt.%)-doped ZnO(TZO) films with thickness from 100 nm to 500 nm were prepared on polyethylene naphthalate(PEN) substrate under various rf-power range from 40 W to 80 W. Their electrical and optical properties were investigated as a function of rf-power. We think that these properties were closely related with the crystallization and the film density of TZO films. It was also presumed that the vaporization of the water vapor and other adsorbed particles such as an organic solvents can affect the electrical properties of the conventional transparent conductive oxide(TCO) films. On the other hand, since the TZO film deposited on glass substrate at room temperature with rf-power of 80 W shows a very low resistivity of $7.5\times10^{-4}\;\Omega{\cdot}cm$ and a very excellent transmittance over an average 85% in the visible range, that is comparable to that of ITO films. Therefore, we expect that the TZO films can be used as transparent electrode for optoelectronic devices such as touch-panels, flat-panel displays, and thin-film solar cells.

• 센서학회지
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• 제19권1호
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• pp.1-7
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• 2010

Electrostatic capacitance measurement method in a fine hose was proposed, in which two ring-type electrodes were disposed on the hose in the direction of fluid flow instead of the conventional face-to-face electrodes. With the proposed electrode structure, we realized a Ringer's solution exhaustion detector for an IV(invasive vein) injection set. On a 4 mm-diameter hose of IV set, we disposed two ring-type electrodes of 10 mm width at a distance of 5 mm each other and obtained 0.72 pF and 2.51 pF for air and 10 % dextrose Ringer's solution in the hose, respectively. The capacitance between the two electrodes varied with the hose-wraparound coverage of electrode as well as the width of electrode and the distance between the electrodes. For hose-wraparound electrode coverage of 75 %, the capacitance varied from 0.62 pF to 1.98 pF with the Ringer's solution level between the two electrodes. A charge amplifier converted the capacitance. variation into electric signal and a comparator was used to detect whether Ringer's solution was exhausted or not. The result was delivered to a host using a RF transmitter with 320 MHz carrier frequency.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2009년도 추계학술대회 논문집
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• pp.177-179
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• 2009

In order to investigate the possible application of ZnO films as a transparent conducting oxide (TCO) electrode, ZnO:Al films were prepared by RF magnetron sputtering method. The effects of surface treatment and doping concentration on the structural and electrical properties of ZnO films were mainly studied experimentally. Five-inch PDP cells using either a ZnO:Al or indium tin oxide (ITO) electrode were also fabricated separately under the same manufacturing conditions. The luminous properties of both the transparent conducting oxide electrode were measured and compared with each other. By doping the ZnO target with 2 wt% of Al2O3, the film deposited at a chemical surface treatment resulted in the minimum resistivity of 8.5 _ 10_4 U-cm and a transmittance of 91.7%. And DBD surface treatment resulted in the minimum resistivity of 8.5 _ 10_4 U-cm and a transmittance of 91.7%. Although the luminance and luminous efficiency of the transparent conducting oxide electrode using ZnO:AI are lower than those of the cell with the ITO electrode by about 10%, these values are sufficient enough to be considered for the normal operation of TCO.