• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.1
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• pp.19-26
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• 2006

The ccrf-discharge has in comparison with the hollow-cathode discharge and DC-discharge some advantages: Simple design of the tube and homogeneous plasma. The ccrf-discharge was researched with the goal, to use on the excitation of the gas laser. In this work a rf-exciting system was planned and developed. With it a homogeneous discharge was produced in the cw operation. To supply the rf-power with the frequency 13.56[MHz] effectively in the discharge, laser tube were used with inner diameter of 5[mm] and the specially developed rf-electrodes. A matching circuit was composed also. Thereby the impedance of the discharge tube was adjusted to the 50[$\Omega$] output resistance of the rf-source.

• International Journal of Computer Science & Network Security
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• v.23 no.2
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• pp.183-192
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• 2023

Radiofrequency ablation (RFA) is an alternative treatment for liver cancer to the surgical intervention preferred by surgeons. However, the main challenge remains the use of RF for the ablation of large tumours (i.e., tumours with a diameter of >3 cm). For large tumours, RFA takes a large duration in the ablation process compared with surgery, which increases patient pain. Therefore, RFA for large tumours is not preferred by surgeons. The currently materials used in RF electrodes, such as the nickeltitanium alloy (nitinol), are characterized by low thermal and electrical conductivities. On the other hand, the use of materials that have high thermal and electrical conductivities, such as titanium aluminide alloy (gamma titanium), produces more thermal energy for tumours. In this paper, we developed a cool-tip RF electrode model that uses nickel-titanium alloy and replaced it with titanium aluminide alloy by using the finite element model (FEM). The aim of this paper is to study the effect of the thermal and electrical conductivities of gamma titanium on the ablation volume. Results showed that the proposed design of the electrode increased the ablation rate by 1 cm³ /minute and 6.3 cm³/10 minutes, with a decrease in the required time ablation. Finally, the proposed model reduces the ablation time and damages healthy tissue while increasing the ablation volume from 22.5% cm³ to 62.5% cm³ in ten minutes compared to recent studies.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.9
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• pp.1323-1329
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• 2015

The WO₃/Ag/WO₃ transparent thin films are fabricated by the RF magnetron sputtering. This has a transmittance of front and rear about 90% in the visible light range and surface resistance of 6.41Ω/□. In this paper, we analyzed the surface characteristics caused by the working pressure and O₂ plasma surface treatment to apply a transparent electrode that was prepared to the laminated structure with other materials. The working pressure was changed in the WO₃ film to 10mTorr, 7mTorr, and 5mTorr, it showed a lower than roughness of conventional ITO. In addition, by 55.5774 J/m² at 5mTorr, it shows the hydrophobic property with lower process pressure. O₂ plasma surface treatment was changed at the condisions of the RF power to 150W, 100W, and 50W and the process time to 240s, 180s, 120s, and 60s. The surface roughness are the maximum roughness(Rmax) 6.437nm and the average roughness(Rq) 0.827nm at RF power 150W, and the maximum roughness (Rmax) 6.880nm and the average roughness (Rq) 0.839nm at process time 240sec. It showed a lower value than the surface treatment. also about working pressure and process time is increased, it showed the hydrophobic.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.612-614
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• 1993

Sputtering requires a way to bombard the target with sufficient momentum. Positive ions are the most convenient source since their energy and momentum can be controlled by applying a potential to the target. Although many types of discharges have been used for sputtering, magnetrons are now the most widely used because of the high ion current densities. Namely, plasma near the target electrode is confined by magnetic field using permanent magnet, so that the collision probability is increased. It is important to develop RF magnetron sputtering system which has many excellent merits compared with conventional methods. Our study aims to develop 1 kW RF source(13.56 MHz, TR type) and to accumulate the design and construction technology of RF magnetron sputter-deposition system. We developed 1 kW RF sputtering system to deposit thin film. These films are deposited by this RF source matched by auto-matching system using primarily argon gas. Target of Au, Ni, Al, and $SiO_2$ was well deposited on the argon pressure of 5-10 mTorr.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.695-698
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• 2003

This paper presents a Si power LDMOSFET for power amplifiers in the 1.8-2.2GHz frequency range for the base station of personal communication systems. To improve the cut-off frequency, the proposed Si power LDMOSFET has small gate to drain capacitance by shielding the electric fields with extended source electrode and forming the field oxide structure in drain region. The proposed Si power LDMOSFET can be used for a power amplifier and it has 32% of power added efficiency and 39.5dBm of output power when the supply voltage is 28V and the operating frequency is 1.9GHz.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.10
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• pp.505-509
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• 2004

The (Sr/sub 0.9/Ca/sub 0.1/)TiO₃(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/SiO₂/Si) using RF sputtering method at various substrate temperature. The optimum conditions of RF power and Ar/O₂ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin film was about 18.75[Å/min]. The crystallinity of SCT thin films were increased with increase of substrate temperature in the temperature range of 100～500[℃]. The dielectric constant of SCT thin films were increased with the increase of substrate temperature, and changed almost linearly in temperature ranges of -80～+90[℃]. The current-voltage characteristics of SCT thin films showed the increasing leakage current as the substrate temperature increases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.88-91
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• 2000

The $(Sr_{0.85}Ca_{0.15})TiO_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method. The crystallinity of SCT thin films is increased with increase of substrate temperature in the temperature range of 200~500$[^{\circ}C]$. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of 25~100$[^{\circ}C]$ can be divided into four characteristic regions with different mechanism by the increasing current.

• Proceedings of the KIEE Conference
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• 1987.07b
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• pp.1309-1312
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• 1987

Hyperthermia for the treatment of cancer has been introduced for a long time and the biological effect for the use of hyperthermia to malignant tumors has been well established and encouraging clinical results has been observed. Unfortunately, the engineering or technical aspects of hyperthermia for the deep seated tumors has not been satisfactory. We have researched and developed the radiofrequency capacitive hyperthermia system (GHT- RF8). It was composed with 8-9 MHZ RF generator, capacitive electrode, matching system, cooling system, temperature measuring system and control computer. The thermal profile was investigated in agar phantom, animals and in human tumors, which was heated with capacitive RF device.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.489-489
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• 2012

The vibrational distribution of $N_2$ (B, v') in after-glows in $N_2$ RF flowing plasma was investigated. The optical emission of the after-glow was studied as function of distance from plasma. In a tube 2.1 cm, the gas pressure varied 8 Torr with 1000sccm nitrogen gas flowing late.. The discharges were excited by two ring-electrode powered by RF 13.56 MHz 100 Watt. $N_2$ (B, v') vibrational distribution was analyzed to see depends of position in after-glow. Dissociation rate of $N_2$ varied showing maximum in the late after-glow region. We studied $N_2$ RF capacitive flowing plasmas and afterglows by emission spectroscopy and by NO titration to determine the density of N-atoms.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.10
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• pp.436-440
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• 2003

The (S $r_{0.85}$C $a_{0.15}$)Ti $O_3$(SCT) thin films were deposited on Pt-coated electrode(Pt/TiN/ $SiO_2$/Si) using RF sputtering method according to the deposition condition. The optimum conditions of RF power and Ar/ $O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[$\AA$/min] at the optimum condition. The composition of SCT thin films deposited on Si substrate is close to stoichiometry (1.102 in A/B ratio). The capacitance characteristics had a stable value within $\pm$4[%]. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films were observed above 200[kHz]. SCT thin films used in this study showed the phenomena of dielectric relaxation with the increase of frequency.ncy.