Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

High Performance Silicon LDMOSFET for RF Power Amplifiers

RF 전력증폭기용 고성능 실리콘 LDMOSFET

  • 신창희 (한양대학교 전자전기컴퓨터공학부) ;
  • 김진호 (한양대학교 전자전기컴퓨터공학부) ;
  • 권오경 (한양대학교 전자전기컴퓨터공학부)
  • Published : 2003.07.01
Download PDF
⟨ Previous Next ⟩

Abstract

This paper presents a Si power LDMOSFET for power amplifiers in the 1.8-2.2GHz frequency range for the base station of personal communication systems. To improve the cut-off frequency, the proposed Si power LDMOSFET has small gate to drain capacitance by shielding the electric fields with extended source electrode and forming the field oxide structure in drain region. The proposed Si power LDMOSFET can be used for a power amplifier and it has 32% of power added efficiency and 39.5dBm of output power when the supply voltage is 28V and the operating frequency is 1.9GHz.

Keywords