• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2011.10a
• /
• pp.886-887
• /
• 2011

To obtain a transparent electrode, AZO thin film was deposited on SiOC film with various flow rates by rf magnetron sputtering system. SiOC film was deposited with various DMDMOS/O2 flow rate ratio by CVD, The optical electrical properties of the SiOC film and SiOC/AZO were analyzed by the uv visible spectrometer and 4 point prove system. The reflectance of SiOC/AZO film was changed in compared with that of SiOC film. The resistance was decreased with low RF power because of increasing the concentration of carriers.

• Journal of Biomedical Engineering Research
• /
• v.8 no.1
• /
• pp.63-68
• /
• 1987

The biological effects for the use of hypertherinla to treat malignant tumors has been well studied and encouraging clinical results have been reported. However, the engineering and technical aspects of hyperthermia for the deepseated tumors has not been satisfactory. We have developed the FF capacitive hyperthermia device(GHT RF8)by cooporation with Yonsei Cancer Center and Green Cross Medical Equipment Corporation. It was composed with 8.10 MHz RF generator, capacitive electrode, matching system, cooling system, temperature measuring thermocouples and control PC computer. We have measured the temperature and thermal distribution in agar phantom, animals and human tumors.

• Proceedings of the KIEE Conference
• /
• 2009.07a
• /
• pp.1248_1249
• /
• 2009

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method with RF power and Ar/$O_2$ ratio. The size of grain of SBN thin films were increased with the increase of Ar/$O_2$ ratio and RF power respectively. Also, the crystallinity of SBN thin films were increased remarkably at RF power and Ar/$O_2$ ratio were 80[W] and 80/20, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.8
• /
• pp.671-676
• /
• 2009

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various deposition conditions. We investigated the effect of deposition condition on the surface morphology and dielectric properties of SBN thin films. The optimum of the rougness showed about 4.33 nm in 70/30 of Ar/$O_2$ ratio. The crystallinity and rougness of SBN thin films were increased with the increase of rf power. Also, Deposition rate of SBN thin films was about 4.17 nm/min in 70 W of rf power. The capacitance of SBN thin films were increased with the increase of Ar/$O_2$ ratio, rf power and deposition temperature respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.5
• /
• pp.435-443
• /
• 2001

As power durable RF SAW filters, AL-(0∼2wt%)Cu alloy multi-layered thin electrodes were deposited on 42° LiTaO$_3$ piezoelectric substrates by magnetron sputtering process, and then ladder-type RF SAW filters, satisfying the electrical specification of CDMA transmission band, were fabricated through optimizing SAW resonator structures. The temperature of film electrodes in SAW filter was increased with RF power, and reached the maxima to cause a failure of SAW filters at the cut-off frequencies of the RF filter band. As RF power increases, the electrodes of Al-Cu alloy showed higher power durability than that of pure Al. The multi-layer laminated film of Al-1wt.% Cu/Cu/Al-1wt%Cu resulted in the best power durability up to 4W of RF power. Every film electrode, however, was destroyed within seconds whenever applying a critical RF power to SAW filters, regardless of the composition and structure of film electrodes. The breakdown of film electrodes under FR power seems to believe due to the fatigue of electrodes caused by repetitive cyclic stress of surface acoustic wave, which is amplified as RF power increases.

• Journal of Biosystems Engineering
• /
• v.41 no.2
• /
• pp.108-115
• /
• 2016

Purpose: Radio frequency (RF) heating is a promising thawing method, but it frequently causes undesirable problems such as non-uniform heating. This can occur because of the food shape, component distribution, and initial temperature differences between food parts. In this study, RF heating was applied to the thawing of cylindrically shaped pork sirloin by changing the shape of electrodes and the surrounding temperature. Methods: Curved electrodes were utilized to increase the thawing uniformity of cylindrically shaped frozen meat. Pork sirloin in the shape of a half-circle column was frozen in a deep freezer at $-70^{\circ}C$ and then thawed by RF heating with flat and curved electrodes. In order to prevent fast defrosting of the food surface by heat transfer from air to the food, the temperature of the thawing chamber was varied by -5, -10, and $-20^{\circ}C$. The temperature values of the frozen pork sirloin during RF thawing were measured using fiber-optic thermo sensors. Results: After multiple applications of curved electrodes resembling the food shape, and a cooled chamber at $-20^{\circ}C$ the half-cylindrically shaped meat was thawed without surface burning, and the temperature values of each point were similarly increased. However, with the parallel electrode, the frozen meat was partially burned by RF heating and the temperature values of center were overheated. The uniform heating rate and heat transfer prevention from air to the food were crucial factors for RF thawing. In this study, these crucial factors were accomplished by using a curved electrode and lowering the chamber temperature. Conclusions: The curved shape of the electrode and the equipotential surface calculated from the modeling of the parallel capacitor showed the effect of uniform heating of cylindrically shaped frozen food. Moreover, the low chamber temperature was effective on the prevention of the surface burning during RF thawing.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.437-437
• /
• 2010

DC Hollow cathode 방전은 약 100여 년 전, Paschen에 의해 실험된 이후로 광원, 스퍼터링 공정, 이온빔 소스 등 다양한 분야에 이용되어 왔다. 최근 태양전지용 마이크로 결정질 실리콘 증착 시, RF CCP의 전극에 복수의 홀 혹은 트렌치 구조를 두어 Hollow cathode 방전 효과를 이용하여 향상된 공정 속도로 공정을 진행한다. 그러나 RF-MHCD (Multi hole cathode discharge) 공정을 위한 최적 규격의 홀 기에 관한 연구는 그 중요성과 응용성에도 불구하고 깊게 이루어지지 못한 바 있다. 그러므로 저자는 Capacitively Coupled Plasma (전극 간격 : 4cm, 전극 직경 : 14cm) 장비에서 평면 전극과 10mm 깊이와 각각 3.5mm, 5mm, 7mm, 10mm 직경의 홀이 있는 4개의 전극을 이용하여 Argon RF-MHCD 방전을 관찰하여 조건 별 최적의 홀 전극 디자인을 도출하였다. 실험 조건은 64.5mTorr ~ 645mTorr압력 범위/ 1A~9A이며, 플라즈마는 전극 사이 중앙에 설치한 RF-compensated Langmuir Probe와, 전극과 전기적으로 접촉하는 1000:1 Probe 와 Voltage-Current Probe를 이용하여 측정되었다. 실험 결과 압력 조건 별로, 최적의 전자 밀도를 유도하는 전극 상 홀의 직경이 달라짐을 확인하였다.

• Journal of the Semiconductor & Display Technology
• /
• v.9 no.3
• /
• pp.23-27
• /
• 2010

We prepared Al doped ZnO thin film as a top electrode on a glass substrate with a deposited $Alq_3$ for the top emission organic Light emitting device (TEOLED) with facing target sputtering (FTS) method and radio-frequency (RF) sputtering method, respectively. Before the deposition of AZO thin film, we evaporated the $Alq_3$ on glass substrate by thermal evaporation. And we evaluated the damage of organic layer. As a result, PL intensity of $Alq_3$ on grown by FTS method showed higher than that of grown by RF sputtering method, so we found that the FTS showed the lower damage sputtering than RF sputtering. Therefore, we can expect the FTS method is promising the low-damage sputtering system that can be used as a direct sputtering on the organic layer.

• Proceedings of the KIEE Conference
• /
• 1995.07c
• /
• pp.1245-1247
• /
• 1995

In this paper, Analyzed structual property using SEM and XRD. The longer distance between substrate and target enhance crystalographic orientation of (110)plane, but inhibit growth of (002)plane. Also, deposited ZnO thin film on electrode layer inhibit crystalographic orientation of (002)plane, expecially Al electrode inhibit stronger than Pt layer. And using fabricated transducer, analyzed eletric and frequency characteristics.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.52 no.9
• /
• pp.400-406
• /
• 2003

Efficient electrodes are devised for organic luminescent device(OLED). ITO electrode is treated with $O_2$ plasma. In order to inject hole efficiently, there is proposed the shape of anode that inserted plasma polymerized films as buffer layer between anode and organic layer using thiophene monomer. In the case of device inserted the buffer layer by using the plasma polymerization after $O_2$ plasma processing for ITO transparent electrode, since it forms the stable interface and reduce the moving speed of hole, the recombination of hole and electronic are made in the emitting layer. Therefore it realized the device capability of two times in the aspect of luminous efficiency than the device which do not be inserted the buffer layer. Experiments are limited to the device that has the structure of TPD/$AIq_3$, however, the aforementioned electrodes can similarly applied to the organic luminous device and the Polymer luminous device.