• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.7
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• pp.420-424
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• 2016

In this study, we developed photocatalytic technology to address the emerging serious problem of air pollution through indoor air cleaning. A single layer of $WO_3$ was prepared by using the dry process of general RF magnetron sputtering. At a base vacuum of $1.8{\times}10^{-6}$[Torr], the optical and electrical properties of the resulting thin films were examined for use as a transparent electrode as well as a photocatalyst. The single layer of $WO_3$ prepared at an RF power of 100 [W], a pressure of 7 [mTorr] and Ar and $O_2$ gas flow rates of 70 and 2 sccm, respectively, showed uniform and good optical transmittance of over 80% in the visible wavelength range from 380 [nm] to 780 [nm]. The optical catalyst characteristics of the $WO_3$ thin film were examined by investigating the optical absorbance and concentration variance in methylene blue, where the $WO_3$ thin film was immersed in the methylene blue. The catalytic characteristics improved with time. The concentration of methylene blue decreased to 80% after 5 hours, which confirms that the $WO_3$ thin film shows the characteristics of an optical catalyst. Using the reflector of a CCFL (cold cathode fluorescent lamp) and the lens of an LED (lighting emitting diode), it is possible to enhance the air cleaning effect of next-generation light sources.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.7
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• pp.8-16
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• 2010

In this paper, we investigated the effects of $O_2$ fraction on the properties of Al-doped ZnO (AZO) thin films prepared by radio frequency (RF) magnetron sputtering. Hall, photoluminescence (PL), and X-ray photoelectron spectroscopy (XPS) measurements revealed that the p-type conductivity was exhibited for AZO films with an $O_2$ fraction of 0.9 while the n-type conductivity was observed for films with $O_2$ fractions in range of 0 - 0.6. PL and XPS also showed that the acceptor-like defects, such as zinc vacancies and oxygen interstitials, increased in films prepared by an $O_2$ fraction of 0.9, resulting in the p-type conductivity in the films. Hall results indicated that AZO films prepared by $O_2$ fractions in range of 0 - 0.6 can be used for electrode layers in the applications of transparent thin film transistor. We concluded from the X-ray diffraction analysis that worse crystallinity with a smaller grain size as well as higher tensile stress was observed in the films prepared by a higher $O_2$ fraction, which is related to incorporation of more oxygen atoms into the films during deposition. The study of atomic force microscope suggested that the smoother surface morphology was observed in films prepared by using $O_2$ fraction, which causes the higher resistivity in those films, as evidenced by Hall measurements.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.12a
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• pp.167-167
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• 2003

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.185-187
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• 2012

Ga doped ZnO (GZO)/copper (Cu) bi-layered film was deposited on glass substrate by RF and DC magnetron sputtering and then the effect of the Cu bottom layer on the optical, electrical and structural properties of GZO films were considered. As-deposited 100 nm thick GZO films had an optical transmittance of 82% in the visible wavelength region and a sheet resistance of 4139 ${\Omega}/{\Box}$, while the GZO/Cu film had optical and electrical properties that were influenced by the Cu bottom layer. GZO films with 5 nm thick Cu film show the lower sheet resistance of 268 ${\Omega}/{\Box}$ and an optical transmittance of 65% due to increased optical absorption by the Cu metallic bottom layer. Based on the figure of merit, it can be concluded that the thin Cu bottom layer effectively increases the performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.94.1-94.1
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• 2010

RF 마크네트론 스퍼트를 이용하여 유리 기판 위에 태양전지 투명전극용 Al 도핑된 ZnO(AZO)를 증착하였다. Si 박막 태양전지용 투명전극으로 사용될 AZO의 광학 및 구조적 특성을 향상시키기 위해서 증착온도 및 Ar 가스의 유량비를 조절하여 증착하였다. 상온에서 500도 범위 내에서 증착하였고, 10에서 40 sccm의 범위 내에서 Ar의 유량을 변화시켰다. 증착된 AZO의 광학적 특성은 UV-spectrometer를 이용하여 측정하였고, 구조적 특성은 XRD를 이용하여 측정하였다. 가스의 유량비에 따라 광학 및 구조적 특성의 의존성을 나타내고, 가스 유량비를 조절하여 태양전지용 투명전극의 광학 및 구조적 특성의 최적화를 이룰 수 있다.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.363-366
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• 2004

PZT thin films were formed by rf-magnetron sputtering on $Pt/Ti/SiO_2/Si$ substrate. Bulk PZT target containing $5\%$ excess PbO was used. They were formed with in-situ process at $650^{\circ}C$ as total thickness of 175 and 250 nm after the depositing of thin PZT films at room temperature, i. e. 2-step Sputtering. It was found that the ferroelectric perovskite phase is formed at $650^{\circ}C$ by XRD and the interface between room temp.-layer and $650^{\circ}C$ -layer is not existent. In the samples undergoing 2-step sputtering the dielectric constant was 600 or more and the leakage current density was $2{\times}10^{-7}A/cm^2$. So, we found that the room temp.-layer on the bottom electrode stabilize the underlaid layers.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.632-635
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• 2004

We have studied the effect of $TiO_2$ layer deposited by RF magnetron sputtering which is used as an ultra thin hole-injection buffer layer in organic light-emitting diode (OLED). The $TiO_2$ thin film layer prevents metallic ions from diffusing from the ITO layer to the organic layers and improves the balance of hole and electron injections and the interface characteristics between the electrode and the organic layer. With 2 nm thickness of $TiO_2$, the quantum efficiency was improved by 45 % compared to the device fabricated without the $TiO_2$ layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05a
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• pp.35-37
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• 2001

The Al etching was studied employing negative ions generated in the downstream $Cl_2$ plasma. In order to etch the Al film practically on an insulator covered electrode coupled with RF power, reduction of the negative self bias voltage (Vdc) was examined using a magnetic filter which trapped electrons. Addition of $SF_6$ and $H_2$ to a $Cl_2/BCl_3$ mixture reduced significantly Vdc.

• Journal of the Korean Society of Industry Convergence
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• v.6 no.1
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• pp.43-48
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• 2003

점용접은 자동차를 제작하는데 사용하는 가장 유용한 용접법이다. 그러나 산업현장에서 직면하고 있는 가장 큰 문제점 중의 하나는 점용접의 용접성에 관한 문제이다. 본 연구에서는 강판의 두께가 1.6mm인 경우와 1.2mm인 경우에 대해 2점 점용접을 실시하여 인장강도를 증가시키고 용접의 흔적을 남기지 않게 하기 위한 조건을 찾는 것을 목적으로 하였다. 용접성에 영향을 미치는 많은 요소들이 있다. 그중에서 용접전극의 형상이 인장강도를 증가시키는 요소로 집중을 하면서 연구를 수행하여 다음과 같은 결과를 얻었다. 인장강도는 용접전극의 형상 및 팁직경 거리와 전류가 클수록 증가하였다. 시행 착오법을 통해 최적용접조건을 찾았고 그에 따른 최적전류인 9,000A와 전극의 형상 RF형을 찾았다. 경도시험결과는 인장력이 시험편에 작용할 때 열 영향부인 HAZ부에서 왜 파괴가 일어나는지를 설명해 주었다.

• 한국신재생에너지학회:학술대회논문집
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• 2008.05a
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• pp.436-437
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• 2008

Flexible CIGS thin film solar cell was fabricated using STS430 plate as a flexible substrate in this work. A diffusion barrier layer of $SiO_2$ thin film was deposited on STS430 substrate by PECVD followed by deposition of double layered Mo back contact. After depositing CIGS absorber layer by co-evaporation, CdS buffer layer by chemical bath deposition, ZnO window layer by RF sputtering and Al electrode by thermal evaporation, the solar cell fabrication processes were completed and its performance was evaluated. Corresponding solar cell showed an conversion efficiency of 8.35 % with $V_{OC}$ of 0.52 V, $J_{SC}$ of 26.06 mA/$cm^2$ and FF of 0.61.