• Title/Summary/Keyword: rf-electrode

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Effect of $Ar^+$ RF Plasma Treatment Conditions on Interfacial Adhesion Energy Between Cu and ALD $Al_2O_3$ Thin Films for Embedded PCB Applications ($Ar^+$ RF 플라즈마 처리조건이 임베디드 PCB내 전극 Cu박막과 ALD $Al_2O_3$ 박막 사이의 계면파괴에너지에 미치는 영향)

  • Park, Sung-Cheol;Lee, Jang-Hee;Lee, Jung-Won;Lee, In-Hyung;Lee, Seung-Eun;Song, Byoung-Ikg;Chung, Yul-Kyo;Park, Young-Bae
    • Journal of the Microelectronics and Packaging Society
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    • v.14 no.1
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    • pp.61-68
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    • 2007
  • Interfacial fracture energy(${\Gamma}$) between $Al_2O_3$ thin film deposited by Atomic Layer Deposition(ALD) and sputter deposited Cu electrode for embedded PCB applications is measured from a $90^{\circ}$ peel test. While the interfacial fracture energy of $Cu/Al_2O_3$ is very poor, Cr adhesion layer increases the interfacial fracture energy to $39.8{\pm}3.2g/mm\;for\;Ar^+$ RF plasma power density of $0.123W/cm^2$, which seems to come from the enhancement of the mechanical interlocking and Cr-O chemical bonding effects.

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A New Strategy to Fabricate a Colloidal Array Templated $TiO_2$ Photoelectrode for Dye-sensitized Solar Cells

  • Lee, Hyeon-Jeong
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.8.1-8.1
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    • 2011
  • Nanocrystalline titanium dioxide ($TiO_2$) materials have been widely used as an electron collector in DSSC. This is required to have an extremely high porosity and surface area such that the dye can be sufficiently adsorbed and be electronically interconnected, resulting in the generation of a high photocurrent within cells. In particular, their geometrical structures and crystalline phase have been extensively investigated as important issues in improving its photovoltaic efficiency. In this study, we present a new strategy to fabricate a photoelectrode having a periodic structured $TiO_2$ film templated from 1D or 3D polystyrene (PS) microspheres array. Monodisperse PS spheres of various radiuses were used for colloidal array on FTO glasses and two types of photoelectrode structures with different $TiO_2$ materials were investigated respectively. One is the igloo-shaped electrode prepared by $TiO_2$ deposition by RF-sputtering onto 2D microsphere-templated substrates. At the interface between the film and substrate, there are voids formed by the decomposition of PS microspheres during the calcination step. These holes might be expected to play the predominant roles as scattering spherical voids to promote a light harvesting effect, a spacious structure for electrolytes with higher viscosity and effective paths for electron transfer. Additionally the nanocrystalline $TiO_2$ phase prepared by the RF-sputtering method was previously reported to improve the electron drift mobility within $TiO_2$ electrodes. This yields solar cells with a cell efficiency of 2.45% or more at AM 1.5 illumination, which is a very remarkable result, considering its $TiO_2$ electrode thickness (<2 ${\mu}m$). This study can be expanded to obtain higher cell efficiency by higher dye loading through the increase of surface area or multi-layered stacking. The other is the inverse opal photonic crystal electrode prepared by titania particles infusion within 3D colloidal arrays. To obtain the enlargement of ordered area and high quality of crystallinity, the synthesis of titania particles coated with a organic thin layer were applied instead of sol-gel process using the $TiO_2$ precursors. They were dispersed so well in most solvents without aggregates and infused successfully within colloidal array structures. This ordered mesoporous structure provides the large surface area leading to the enough adsorption of dye molecules and have an light harvesting effect due to the photonic band gap properties (back-and-forth reflection effects within structures). A major advantage of this colloidal array template method is that the pore size and its distribution within $TiO_2$ photoelectrodes are determined by those of latex beads, which can be controlled easily. These materials may have promising potentials for future applications of membrane, sensor and so on as well as solar cells.

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A Novel Approach for Controlling Process Uniformity with a Large Area VHF Source for Solar Applications

  • Tanaka, T.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.146-147
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    • 2011
  • Processing a large area substrate for liquid crystal display (LCD) or solar panel applications in a capacitively coupled plasma (CCP) reactor is becoming increasingly challenging because of the size of the substrate size is no longer negligible compared to the wavelength of the applied radio frequency (RF) power. The situation is even worse when the driving frequency is increased to the Very High Frequency (VHF) range. When the substrate size is still smaller than 1/8 of the wavelength, one can obtain reasonably uniform process results by utilizing with methods such as tailoring the precursor gas distribution by adjustingthrough shower head hole distribution or hole size modification, locally adjusting the distance between the substrate and the electrode, and shaping shower head holes to modulate the hollow cathode effect modifying theand plasma density distribution by shaping shower head holes to adjust the follow cathode effect. At higher frequencies, such as 40 MHz for Gen 8.5 (2.2 m${\times}$2.6 m substrate), these methods are not effective, because the substrate is large enough that first node of the standing wave appears within the substrate. In such a case, the plasma discharge cannot be sustained at the node and results in an extremely non-uniform process. At Applied Materials, we have studied several methods of modifying the standing wave pattern to adjusting improve process non-uniformity for a Gen 8.5 size CCP reactor operating in the VHF range. First, we used magnetic materials (ferrite) to modify wave propagation. We placed ferrite blocks along two opposing edges of the powered electrode. This changes the boundary condition for electro-magnetic waves, and as a result, the standing wave pattern is significantly stretched towards the ferrite lined edges. In conjunction with a phase modulation technique, we have seen improvement in process uniformity. Another method involves feeding 40 MHz from four feed points near the four corners of the electrode. The phase between each feed points are dynamically adjusted to modify the resulting interference pattern, which in turn modulate the plasma distribution in time and affect the process uniformity. We achieved process uniformity of <20% with this method. A third method involves using two frequencies. In this case 40 MHz is used in a supplementary manner to improve the performance of 13 MHz process. Even at 13 MHz, the RF electric field falls off around the corners and edges on a Gen 8.5 substrate. Although, the conventional methods mentioned above improve the uniformity, they have limitations, and they cannot compensate especially as the applied power is increased, which causes the wavelength becomes shorter. 40 MHz is used to overcome such limitations. 13 MHz is applied at the center, and 40 MHz at the four corners. By modulating the interference between the signals from the four feed points, we found that 40 MHz power is preferentially channeled towards the edges and corners. We will discuss an innovative method of controlling 40 MHz to achieve this effect.

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Evaluations of Si based ternary anode materials by using RF/DC magnetron sputtering for lithium ion batteries

  • Hwang, Chang-Muk;Park, Jong-Wan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.302-303
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    • 2010
  • Generally, the high energy lithium ion batteries depend intimately on the high capacity of electrode materials. For anode materials, the capacity of commercial graphite is unlike to increase much further due to its lower theoretical capacity of 372 mAhg-1. To improve upon graphite-based negative electrode materials for Li-ion rechargeable batteries, alternative anode materials with higher capacity are needed. Therefore, some metal anodes with high theoretic capacity, such as Si, Sn, Ge, Al, and Sb have been studied extensively. This work focuses on ternary Si-M1-M2 composite system, where M1 is Ge that alloys with Li, which has good cyclability and high specific capacity and M2 is Mo that does not alloy with Li. The Si shows the highest gravimetric capacity (up to 4000mAhg-1 for Li21Si5). Although Si is the most promising of the next generation anodes, it undergoes a large volume change during lithium insertion and extraction. It results in pulverization of the Si and loss of electrical contact between the Si and the current collector during the lithiation and delithiation. Thus, its capacity fades rapidly during cycling. Si thin film is more resistant to fracture than bulk Si because the film is firmly attached to the substrate. Thus, Si film could achieve good cycleability as well as high capacity. To improve the cycle performance of Si, Suzuki et al. prepared two components active (Si)-active(Sn, like Ge) elements film by vacuum deposition, where Sn particles dispersed homogeneously in the Si matrix. This film showed excellent rate capability than pure Si thin film. In this work, second element, Ge shows also high capacity (about 2500mAhg-1 for Li21Ge5) and has good cyclability although it undergoes a large volume change likewise Si. But only Ge does not use the anode due to its costs. Therefore, the electrode should be consisted of moderately Ge contents. Third element, Mo is an element that does not alloys with Li such as Co, Cr, Fe, Mn, Ni, V, Zr. In our previous research work, we have fabricated Si-Mo (active-inactive elements) composite negative electrodes by using RF/DC magnetron sputtering method. The electrodes showed excellent cycle characteristics. The Mo-silicide (inert matrix) dispersed homogeneously in the Si matrix and prevents the active material from aggregating. However, the thicker film than $3\;{\mu}m$ with high Mo contents showed poor cycling performance, which was attributed to the internal stress related to thickness. In order to deal with the large volume expansion of Si anode, great efforts were paid on material design. One of the effective ways is to find suitably three-elements (Si-Ge-Mo) contents. In this study, the Si based composites of 45~65 Si at.% and 23~43 Ge at.%, and 12~32 Mo at.% are evaluated the electrochemical characteristics and cycle performances as an anode. Results from six different compositions of Si-Ge-Mo are presented compared to only the Si and Ge negative electrodes.

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Efficient Multicasting Mechanism for Mobile Computing Environment Machine learning Model to estimate Nitrogen Ion State using Traingng Data from Plasma Sheath Monitoring Sensor (Plasma Sheath Monitoring Sensor 데이터를 활용한 질소이온 상태예측 모형의 기계학습)

  • Jung, Hee-jin;Ryu, Jinseung;Jeong, Minjoong
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2022.05a
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    • pp.27-30
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    • 2022
  • The plasma process, which has many advantages in terms of efficiency and environment compared to conventional process methods, is widely used in semiconductor manufacturing. Plasma Sheath is a dark region observed between the plasma bulk and the chamber wall surrounding it or the electrode. The Plasma Sheath Monitoring Sensor (PSMS) measures the difference in voltage between the plasma and the electrode and the RF power applied to the electrode in real time. The PSMS data, therefore, are expected to have a high correlation with the state of plasma in the plasma chamber. In this study, a model for predicting the state of nitrogen ions in the plasma chamber is training by a deep learning machine learning techniques using PSMS data. For the data used in the study, PSMS data measured in an experiment with different power and pressure settings were used as training data, and the ratio, flux, and density of nitrogen ions measured in plasma bulk and Si substrate were used as labels. The results of this study are expected to be the basis of artificial intelligence technology for the optimization of plasma processes and real-time precise control in the future.

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A Study on the Characterisitics of Reactive Ion Etching (Cylindrical Magnetron을 사용한 실리콘의 반응성 이온 건식식각의 특성에 관한 연구)

  • Yeom, Geun-Yeong
    • Korean Journal of Materials Research
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    • v.3 no.4
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    • pp.327-335
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    • 1993
  • Using a RF cylindrical magnetron operated with two electromagnets having a Helmholz configuration, RF magnetron plasma properties and characteristics of reactive ion ething of Si were investigated as a function of applied magnetic field strengths using 3mTorr $CF_4/H_2$ and $CHF_3$. Also, I-V characteristics of Schottky diodes, which were made of silicons etched under different applied magnetic field strengths and gas environments, were measured to investigate the degree of radiation damage during the reactive ion etching. As the magnetic field strent;th increased, ion densities and radical densities of the plasmas were increased linearly, however, the dc self-bias voltages induced on the powered electrode, where the specimen are located, were decreased exponentially. Maximum etch rates, which were 5 times faster than that etched without applied magnetic filed, were obtained using near lOOGauss, and, under these conditions, little or no radiation damages on the etched silicons were found.

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Study on elemental analysis of metal and ceramic samples by using laser ablation ion trap mass spectrometry(LAITMS) (레이저 이온화 이온트랩 질량분석법을 이용한 금속 및 세라믹 시료의 원소분석에 관한 연구)

  • Song, Kyuseok;Park, Hyunkook;Cha, Hyungki;Lee, Sang Chun
    • Analytical Science and Technology
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    • v.15 no.1
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    • pp.7-14
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    • 2002
  • Laser ablation ion trap mass spectrometry (LAITMS) was developed for the analysis of metal and ceramic samples. For this study, XeCl excimer laser (308 nm) was used for ablating the samples and ITMS was used as a detector. Samples were introduced from outside of a ring electrode and this way of sample introduction was very effective for solid samples when laser ablation was employed. Helium gas was used as a buffer gas, and its effect on sensitivity and some parameters (buffer gas pressure, ion storage time, and cut-off RF voltage) were studied. The optimized conditions were $1{\times}10^{-4}$ Torr of buffer gas pressure, 100 ms of ion storage time and $1150V_{p-p}$ of cut-off RF voltage. From that results, copper (Cu) and molybdenum (Mo) metals were tested with LAITMS and the mass spectra of these pure metals were compared with the natural abundance of isotope ratio. We also examined ceramic samples ($Al_2O_3$, $ZrO_2$) and represented the result of elemental analysis.

DC/RF Magnetron Sputtering deposition법에 의한 $TiSi_2$ 박막의 특성연구

  • Lee, Se-Jun;Kim, Du-Soo;Sung, Gyu-Seok;Jung, Woong;Kim, Deuk-Young;Hong, Jong-Sung
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.163-163
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    • 1999
  • MOSFET, MESFET 그리고 MODFET는 Logic ULSIs, high speed ICs, RF MMICs 등에서 중요한 역할을 하고 있으며, 그것의 gate electrode, contact, interconnect 등의 물질로는 refractory metal을 이용한 CoSi2, MoSi2, TaSi2, PtSi2, TiSi2 등의 효과를 얻어내고 있다. 그중 TiSi2는 비저항이 가장 낮고, 열적 안정도가 좋으며 SAG process가 가능하므로 simpler alignment process, higher transconductance, lower source resistance 등의 장점을 동시에 만족시키고 있다. 최근 소자차원이 scale down 됨에 따라 TiSi2의 silicidation 과정에서 C49 TiSi2 phase(high resistivity, thermally unstable phase, larger grain size, base centered orthorhombic structure)의 출현과 그것을 제거하기 위한 노력이 큰 issue로 떠오르고 있다. 여러 연구 결과에 따르면 PAI(Pre-amorphization zimplantation), HTS(High Temperature Sputtering) process, Mo(Molybedenum) implasntation 등이 C49를 bypass시키고 C54 TiSi2 phase(lowest resistivity, thermally stable phase, smaller grain size, face centered orthorhombic structure)로의 transformation temperature를 줄일 수 있는 가장 효과적인 방법으로 제안되고 있지만, 아직 그 문제가 완전히 해결되지 않은 상태이며 C54 nucleation에 대한 physical mechanism을 밝히진 못하고 있다. 본 연구에서는 증착 시 기판온도의 변화(400~75$0^{\circ}C$)에 따라 silicon 위에 DC/RF magnetron sputtering 방식으로 Ti/Si film을 각각 제작하였다. 제작된 시료는 N2 분위기에서 30~120초 동안 500~85$0^{\circ}C$의 온도변화에 따라 RTA법으로 각각 one step annealing 하였다. 또한 Al을 cosputtering함으로써 Al impurity의 존재에 따른 영향을 동시에 고려해 보았다. 제작된 시료의 분석을 위해 phase transformation을 XRD로, microstructure를 TEM으로, surface topography는 SEM으로, surface microroughness는 AFM으로 측정하였으며 sheet resistance는 4-point probe로 측정하였다. 분석된 결과를 보면, 고온에서 제작된 박막에서의 C54 phase transformation temperature가 감소하는 것이 관측되었으며, Al impuritydmlwhswork 낮은온도에서의 C54 TiSi2 형성을 돕는다는 것을 알 수 있었다. 본 연구에서는 결론적으로, 고온에서 증착된 박막으로부터 열적으로 안정된 phase의 낮은 resistivity를 갖는 C54 TiSi2 형성을 보다 낮은 온도에서 one-step RTA를 통해 얻을 수 있다는 결과와 Al impurity가 존재함으로써 얻어지는 thermal budget의 효과, 그리고 그로부터 기대할 수 있는 여러 장점들을 보고하고자 한다.

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Failure Mechanism Analysis of SAW Device under RF High Power Stress (RF 고전력 스트레스에 의한 SAW Device의 고장메카니즘 분석)

  • Kim, Young-Goo;Kim, Tae-Hong
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.14 no.5
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    • pp.215-221
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    • 2014
  • In this paper, the improved power durability test system and method for an reliability analysis of SAW device is proposed and the failure mechanism through failure analysis is analyzed. As a result of the failure analysis using microscope, SEM and EDX, the failure mechanism of the SAW device is electromigration due to joule heating under high current density and high temperature condition. The electromigration makes voids and hillocks in the IDT electrode and the voids and hillocks can lead to short circuit and open circuit faults, respectively, increasing the insertion loss of an SAW filter. The accelerated life testing of the SAW filter for 450MHz CDMA application using the proposed power durability test system and method is carried out. $B_{10}$ lifetime of the SAW filter using Eyring model and Weibull distribution is estimated as about 98,500 hours.

The R-V Characteristics of $SiO_2 $ & $SiO_2/TiN$ Thin Film Fabricated by RF Sputtering (RF Sputtering으로 제작한 $SiO_2 $$SiO_2/TiN$ 박막의 R-V 특성)

  • 김창석;하충기;김병인
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.10
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    • pp.826-832
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    • 1998
  • In this study the thin films with the structure of Si+SiO$_2$+TiN are made by RF supttering method. TiN, which has small diffusion coefficient and low resistivity, is evaporated between SiO$_2$ and Al layers. It investigates the V-R characteristics depending on the thickness of SiO$_2$ which is used as insulation layer and researches its effects on voltage stability of thin film and varistor. These films show very small resistance valus in negative(-) voltage and large and large value in positive voltage band, and with the increase of voltage, resistance value is rapidly reduced and the satisfactory characteristic of varistor is shown at +1[V]. It is found that resistance value of TiN thin film is small and also TiN thin film has more current than the thin film which is not evaporated by TiN thin film. When Al electrode is evaporated of SiO$_2$ thin film, spiking occurs, but the spiking can be prevented with evaporation of TiN between SiO$_2$ and Al layers and this thin films in made easily because of its good attachment. With the increase of voltage, the resistance is changed into non-linear pattern and the bidirectional varistor characteristic is shown and then its theory can be verified by this experiment. Accordingly, when TiN is evaporated of Si Wafer(n-100), it obtains better voltage-resistance than thin film which is not evaporated and also when varistor character is used electrically to automatic control element such as elimination of flame, power distribution arrestor and constant voltage compensation, satisfactory reproducibilities are expected.

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