• Applied Science and Convergence Technology
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• v.23 no.6
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• pp.357-365
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• 2014

A non-invasive method for ion energy distribution measurement at a RF biased surface is proposed for monitoring the property of ion bombardments in capacitively coupled plasma sources. To obtain the ion energy distribution, the measured electrode voltage is analyzed based on the circuit model which is developed with the linearized sheath capacitance on the assumption that the RF driven sheath behaves like a simple diode for a bias power whose frequency is much lower than the ion plasma frequency. The method is verified by comparing the ion energy distribution function obtained from the proposed model with the experimental result taken from the ion energy analyzer in a dual cathode capacitively coupled plasma source driven by a 100 MHz source power and a 400 kHz bias power.

• Journal of the Korean institute of surface engineering
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• v.44 no.6
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• pp.250-254
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• 2011

NiO-AZO films were deposited on glass substrate by DC and RF magnetron co-sputtering system in pure $O_2$ gas without substrate heating during deposition. In order to control the chemical composition of the film, NiO target was supplied with constant RF power of 150 W and AZO target (doped with 2.98 at% aluminum) with DC power varied between 40 W to 80 W. Deposited NiO-AZO films were evaluated by structural and chemical analysis. With introducing AZO, XRD and XPS data reveal that NiO were supplied with more oxygen. these results could be strongly affected by the higher bond enthalpy of NiO compared to ZnO, which makes it possible for NiO to obtain excessive oxygen from ZnO.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.05a
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• pp.467-468
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• 2006

In this work, we present the comparison between $d_{31}\;and\;d_{33}$ mode characterization using the PZT micro-actuator for large displacement. The PZT micro-actuator consisted of Si, PZT, and Pt layer on SOI wafer. The electrode shapes were laminated and interdigitated for $d_{31}\;and\;d_{33}$ mode, respectively. In order to characterize the actuation mode, we measured the displacement using laser interferometer. The maximum displacement of d31 mode was $12.2{\mu}m$ at 10V, the actuation characterization of d31 was better than that of d33 mode. We estimated that displacement of d33 mode would be larger than that of d31 above 30V.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.106-109
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• 2005

The $(Sr_{1-x}Ca_x)TiO_3$(SCT) thin films are deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin film was about 18.75[$\AA$/min]. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mol%]. The capacitance characteristics had a stable value within ${\pm}4$[%] in temperature ranges of -80~+90[$^{\circ}C$].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.352-352
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• 2008

폐 자기회로 구조를 갖는 Meander 형태의 Inductor 설계를 위해 HFSS 프로그램을 이용하여 Meander Inductor를 시뮬레이션 하였다. Meander Inductor의 turn 수(N) 및 폭(W), 두께(T), 랩(G)의 변화에 따른 인덕턴스(L), S-parameter(S)와 Q-factor(Q)의 변화를 HFSS 를 통해 측정하였다. Al2O3 기판과 MgO의 두께는 각각 680um, 50um로 고정하였고, silver electrode를 이용하여 Meander 타입의 Inductor를 설계하였다. Meander Inductor의 turn수(6,7,8turn)의 변화를 측정한 결과, 8턴이었을 때 Q-factor가 19로서 가장 높은 결과를 얻었다. L의 결과 값은 공진 주파수와 의 관계에 의해 6turn일 때 L값은 17GHz에서 공진현상이 나타났다. 또한 W, G, T에 변화를 주어 설계한 뒤 시뮬레이션의 결과 값을 측정하였다. 그 값을 서로 비교한 결과, 변수들의 변화에 따라 L값과 Q-factor가 변화되었다. 이 논문에서는 각 변수에 따른 meander inductor의 특성을 HFSS 시뮬레이션을 통해 비교하고자 한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.3
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• pp.207-213
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• 2003

The Sr$\_$0.7/Bi$\_$2.6/Ta$_2$O$\_$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF magnetron sputtering method. The structural and electrical properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealed atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grain largely grew in oxygen annealing atmosphere. The maximum remnant polarization and the coercive electric field in oxygen annealing atmosphere are 12.40[${\mu}$C/cm$^2$] and 30[kV/cm] respectively. The dielectric constant and leakage current density of capacitors annealed oxygen atmosphere are 340 and 2.13${\times}$10$\^$-9/ [A/cm$^2$] respectively. The fatigue characteristics of SBT capacitors did not change up to 10$\^$10/ switching cycles.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1496-1498
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• 2003

The $(Sr_{0.85}Ca_{0.15})TiO_3$(SCT) thin films were deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method according to the deposition condition. The optimum conditions of RF power and Ar/$O_2$ ratio were 140[W] and 80/20, respectively. Deposition rate of SCT thin films was about 18.75[${\AA}/min$] at the optimum condition. The capacitance characteristics had a stable value within ${\pm}4[%]$. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films were observed above 200[kHz].

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1408-1409
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• 2007

In this paper, we developed a hybrid simulation model of carbon laser ablation under the Ar plasmas consisted of fluid and particle methods. Three kinds of carbon particles, which are carbon atom, ion and electron emitted by laser ablation, are considered in the computation. In the present modeling, we adopt capacitively coupled plasma with ring electrode inserted in the space between the substrate and the target, graphite. This system may take an advantage of ${\mu}m$-sized droplets from the sheath electric field near the substrate. As a result, in Ar plasmas, carbon ion motions were suppressed by a strong electric field and were captured in Ar plasmas. Therefore, a low number density of carbon ions were deposited upon substrate. In addition, the plume motions in Ar gas atmosphere was also discussed.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.228-230
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• 1994

A Spotter ion Plating(SIP) system with a r. f. coil electrode and the Facing Target Sputter(FTS) source was designed for high-quality thin film formation. The rf discharge was combined with DC facing target sputtering in order to enhance ionization degree of a sputtered atoms. The discharge voltage-discharge characteristics curves of a FTS source could be characterized by the fern of $I{\propto}V^n$ with n in the range of $8{\sim}12$. The energy of ions incident on the substrate depended on the sheath potential of DC biased substrate. The mean impact ion energy increased with negative bias voltage and rf power. The adhesive force of the TiN film formed was in the range of $30{\sim}50N$, and markedly influenced by substrate bias voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.357-360
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• 2004

Al doped ZnO thin films have been were properties of excellent optical transmittance, low resistivity and wide bandgap where be widely used transparent electrode on solar cell. In this paper, ZnO:Al thin films on PC substrate were prepared by RF magnetron sputtering method using ceramic taget with diffrent deposition conditions. In addition, the electrical, structural, optical properties were investigated. we investigated sample properties of Sputter powers and pressures change in $25{\sim}125W,\;2{\times}10^{-2}{\sim}2{\times}10^{-3}Torr$.