• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.124.1-124.1
• /
• 2015

$TiO_2$는 화학적으로 안정하며, 인체에 무해하고, 살균특성 및 각종 유기물에 효과적인 분해력, 안정성 및 내구성들의 장점으로 인해 널리 사용되는 광촉매제로 알려져 있다. 최근 $TiO_2$는 유리에 접촉되는 물방울의 표면장력을 크게 하여 접촉각을 10도 이하로 유지시켜줌으로써 비가 오거나 청소를 위해 살수를 할 때 유리면에 얇은 수막을 형성시켜 광촉매 기능으로 분해된 유기질의 오염물질 및 유리표면과의 결합력이 낮아진 무기질의 오염원을 쉽게 제거해 주는 특성들로 인해 오염방지 코팅제로 많이 활용되고 있다. 그러나, $TiO_2$는 빛이 조사될 경우에만 친수특성을 나타낸다는 단점들이 있어 본 연구에서는 $TiO_2$에 $SnO_2$를 혼합한 박막을 증착하여 신뢰성을 향상시키고자 하였다. 또한 기존 $TiO_2$ 코팅막들이 주로 spray 또는 blade 방식으로 코팅되어 코팅된 막이 낮은 균일성과 내구성을 가지므로 본 연구에서는 RF-Magnetron Sputtering 방법을 이용하여 유리 기판위에 $(TiO_2)50(SnO_2)50$ 박막을 증착하였다. 제작된 박막은 유리에 적용될 경우를 감안해 광학적 특성을 분석하기 위해 Uv-vis Spectrometer 장비를 이용하여 투과율을 분석하였으며, $SnO_2$ 혼합에 따른 구조적 특성으로 주사전자현미경(Scanning Electric Microscope, SEM)을 통하여 박막의 결정상을 분석하였으며, 주사탐침현미경(Atomic Force Microscope, AFM)을 사용하여 표면 거칠기를 관찰하였다. 또한 광촉매 특성을 통한 친수성을 알아보기 위해 UV 램프를 사용한 후 접촉각을 측정하였다.

• Korean Journal of Materials Research
• /
• v.19 no.11
• /
• pp.631-636
• /
• 2009

We investigated the NO gas sensing characteristics of ZnO-carbon nanotube (ZnO-CNT) layered composites fabricated by coaxial coating of single-walled CNTs with a thin layer of 1 wt% Al-doped ZnO using rf magnetron sputtering deposition. Morphological studies clearly revealed that the ZnO appeared to form beadshaped crystalline nanoparticles with an average diameter as small as 30 nm, attaching to the surface of the nanotubes. It was found that the NO gas sensing properties of the ZnO-CNT layered composites were dramatically improved over Al-doped ZnO thin films. It is reasoned from these observations that an increase in the surface-to-volume ratio associated with the numerous ZnO “nanobeads” on the surface of the CNTs results in the enhancement of the NO gas sensing properties. The ZnO-CNT layered composite sensors exhibited a maximum sensitivity of 13.7 to 2 ppm NO gas at a temperature of 200${^{\circ}C}$ and a low NO gas detection limit of 0.2 ppm in dry air.

• Korean Journal of Materials Research
• /
• v.19 no.2
• /
• pp.73-78
• /
• 2009

This study investigated the dependence of the various sputtering conditions (Ar pressure: $2{\sim}10\;mTorr$, Power: $50{\sim}150\;W$) and thickness ($50{\sim}1200\;nm$) of Si thin film on the electrochemical properties, microstructural properties and the capacity fading of a Si thin film anode. A Si layer and a Ti buffer layer were deposited on Copper foil by RF-magnetron sputtering. At 10 mTorr, the 50 W sample showed the best capacity of 3323 mAh/g, while the 100 W sample showed the best capacity retention of 91.7%, also at 10 mTorr. The initial capacities and capacity retention in the samples apart from the 50W sample at 10 mTorr were enhanced as the Ar pressure and power increased. This was considered to be related to the change of the microstructure and the surface morphology by various sputtering conditions. In addition, thinner Si film anodes showed better cycling performance. This phenomenon is caused by the structural stress and peeling off of the Si layer by the high volume change of Si during the charge/discharge process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.42-43
• /
• 2009

본 연구에서는 고주파 마그네트론 스퍼터링방법을 사용하여 ITO박막을 대체할 수 있는 새로운 TCO박막으로서 $TiO_2$가 도핑된 ZnO(TZO) 박막을 성막하였다. 이때, $TiO_2$의 도핑량을 1wt.%에서 5wt.%까지 변화를 주었으며 제작된 TZO 박막에 대해서 전기적 특성과 광학적 특성들의 조성비와 박막두께의 할수로서 조사하였다. 그 결과, $TiO_2$가 2wt.% 도핑된 박막에서 가장 낮은 $1\times10^{-3}\Omega{\cdot}cm$의 비저항이 얻어졌으며, $TiO_2$의 도핑량이 증가함에 따라 비저항은 점점 증가하는 것으로 나타났다. 이와같은 비저항의 변화는 $TiO_2$도핑량이 다른 TZO박막의 홀이동도(Hall mobility)에 비례하며, 이동도는 결국 TZO박막을 형성하고 있는 결정립의 크기에 의존하는 것이 X선 회절 패턴으로부터 확인되었다. XRD 패턴에서 ZnO(002) 방향의 결정성이 가장 큰 것으로 나타났으며, 도핑량이 증가할수록(002)피크의 크기가 점점 감소하는 것을 볼 수 있다. 이는 결정성의 크기가 2wt.%일 때 가장 크며 도핑량이 증가할수록 결정성의 크기가 감소하는 것으로 나타났다. 결정립의 크기변화는 TZO박막의 전기적 이동도에 영향을 주는 것으로 나타난다. 즉, 2wt.%일 때 이동도가 가장 크며 도핑량이 증가할수록, 이동도가 감소하였으며 이결과는 TZO박막의 Hall effect 측정으로부터 확인된다. 따라서, $TiO_2$도핑량에 따른 TZO 박막의 비저항을 도핑량이 2wt.%일 때 가장 낮으며 이는 TZO 박막의 결정성이 가장 우수하였으며 그결과 이동도가 증가했기 때문인 것으로 확인되었다.

• Journal of the Korean Vacuum Society
• /
• v.10 no.3
• /
• pp.321-327
• /
• 2001

Ti-Si-N films obtained by using RF reactive sputtering of targets with various Ti/Si ratios in a $N_2(Ar+N_2)$ gas mixture have been investigated in terms of films resistivity and diffusion barrier performance. The chemical bonding state of Si in the Ti-Si-N film which contained a higher Si content was in the form of amorphous $Si_3N_4$, producing increased film resistivity with increased $N_2$flow rate. Lowering the Si content in the deposited Ti-Si-N film favored the formation of crystalline TiN even at low $N_2$flow rates, and leads to low film resistivity. In addition increasing the N content led to Ti-Si-N films having a higher density and compressive stress, suggesting that the N content in the films appear to be one of the most important factors affecting the diffusion barrier characteristics. Consequently, we proposed the optimum composition in the range of 29~49 at.% of Ti, 6~20 at.% of Si, and 45~55 at.% of N for the Ti-Si-N films having both low resistivity and excellent diffusion barrier performance.

• Journal of Sensor Science and Technology
• /
• v.9 no.3
• /
• pp.171-176
• /
• 2000

The physical and electrical characteristics of MgO and Pt thin-films on it, deposited by reactive sputtering and rf magnetron sputtering, respectively, were analyzed with annealing temperature and time by four-point probe, SEM and XRD. Under annealing conditions of $1000^{\circ}C$ and 2 hr, MgO thin-film had the properties of improving Pt adhesion to $SiO_2$ and insulation without chemical reaction to Pt thin-film, and the sheet resistivity and the resistivity of Pt thin-film deposited on it were $0.1288\;{\Omega}/{\square}$ and $12.88\;{\mu}{\Omega}{\cdot}cm$, respectively. We made Pt resistance pattern on $SiO_2$/Si substrate by lift-off method and fabricated thin-film type Pt-RTD(resistance thermometer device) for micro thermal sensors by Pt-wire, Pt-paste and SOG(spin-on-glass). In the temperature range of $25{\sim}400^{\circ}C$, the TCR value of fabricated Pt-RTD with thickness of $1.0{\mu}m$ was $3927\;ppm/^{\circ}C$ close to the Pt bulk value. Resistance values were varied linearly within the range of measurement temperature.

• Korean Journal of Materials Research
• /
• v.21 no.3
• /
• pp.144-148
• /
• 2011

We have investigated the structural and optical properties of Ga-doped ZnO (GZO) thin films deposited by RF magnetron sputtering at various deposition temperatures from 100 to $500^{\circ}C$. All the GZO thin films are grown as a hexagonal wurtzite phase with highly c-axis preferred parameter. The structural and electrical properties are strongly related to deposition temperature. The grain size increases with the increasing deposition temperature up to $400^{\circ}C$ and then decreases at $500^{\circ}C$. The dependence of grain size on the deposition temperature results from the variation of thermal activation energy. The resistivity of GZO thin film decreases with the increasing deposition temperature up to $300^{\circ}C$ and then decreases up to $500^{\circ}C$. GZO thin film shows the lowest resistivity of $4.3{\times}10^{-4}\;{\Omega}cm$ and highest electron concentration of $1.0{\times}10^{21}\;cm^{-3}$ at $300^{\circ}C$. The mobility of GZO thin films increases with the increasing deposition temperature up to $400^{\circ}C$ and then decreases at $500^{\circ}C$. GZO thin film shows the highest resistivity of 14.1 $cm^2/Vs$. The transmittance of GZO thin films in the visible range is above 87% at all the deposition temperatures. GZO is a feasible transparent electrode for the application to the transparent electrode of thin film solar cells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.23 no.9
• /
• pp.681-684
• /
• 2010

The $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ multilayered structure for the transparent electrodes in plasma display panel was designed by essential macleod program (EMP) and the multilayered film was deposited on a glass substrate by direct-current (DC)/radio-frequency (RF) magnetron sputtering system. During film deposition process, the Ag layer in $TiO_2$/Ag/$TiO_2$ structure became oxidized and the filter characteristic was degraded easily. In this study, ZnS layer was adopted as a diffusion blocking layer between $TiO_2$ and Ag to prevent the oxidation of Ag layer efficiently in $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ structure. Based on the AES depth profiling analysis, the Ag layer was effectively protected by the ZnS layer as compared with the $TiO_2$/Ag/$TiO_2$ multilayered films without ZnS as an antioxidant layer. The 3 times stacked $TiO_2$/ZnS/Ag/ZnS/$TiO_2$ films have low sheet resistance of $1.22{\Omega}/{\square}$ and luminous transmittance was as high as 62% in the visible ranges.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.67 no.10
• /
• pp.1370-1374
• /
• 2018

A heterojunction $SnS_2/p-Si$ photodetector was fabricated by RF magnetron sputtering system. $SnS_2$ was formed with 2-inch $SnS_2$ target. Al was applied as the front and the back metal contacts. Rapid thermal process was conducted at $500^{\circ}C$ to enhance the contact quality. 2D material such as $SnS_2$, MoS2 is very attractive in various fields such as field effect transistors (FET), photovoltaic fields such as photovoltaic devices, optical sensors and gas sensors. 2D material can play a significant role in the development of high performance sensors, especially due to the advantages of large surface area, nanoscale thickness and easy surface treatment. Especially, $SnS_2$ has a indirect bandgap in the single and bulk states and its value is 2 eV-2.6 eV which is considerably larger than that of the other 2D material. The large bandgap of $SnS_2$ offers the advantage for the large on-off current ratio and low leakage current. The $SnS_2/p-Si$ photodetector clearly shows the current rectification when the thickness of $SnS_2$ is 80 nm compared to when it is 135 nm. The highest photocurrent is $19.73{\mu}A$ at the wavelength of 740 nm with $SnS_2$ thickness of 80 nm. The combination of 2D materials with Si may enhance the Si photoelectric device performance with controlling the thickness of 2D layer.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.19 no.6
• /
• pp.1393-1398
• /
• 2015

In this study, the electrical and optical properties of GZO (Ga-doped ZnO) thin films prepared on PES substrates by RF magnetron sputtering method with various working pressures (5 to 20 mTorr) were investigated. All GZO thin films exhibited c-axis preferential growth regardless of working pressure, the GZO thin film deposited at 5 mTorr showed the most excellent crystallinity having 0.44˚ of FWHM. In AFM observations, surface roughness exhibited the lowest value of 0.20 nm in a thin film produced by the working pressure 5 mTorr. Figure of merits of GZO thin film deposited at 5 mTorr showed the highest value of 6652, in this case resistivity and average transmittance in the visible light region were 6.93×10^-4Ω-cm and 81.4%, respectively. We could observed the Burstein-Moss effect that carrier concentration decrease with the increase of working pressure and thus the energy band gap is narrowed.